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    Magnetic elements having a bias field and magnetic memory devices using the magnetic elements
    51.
    发明申请
    Magnetic elements having a bias field and magnetic memory devices using the magnetic elements 有权
    具有偏磁场的磁性元件和使用该磁性元件的磁性存储器件

    公开(公告)号：US20070002504A1

    公开(公告)日：2007-01-04

    申请号：US11173087

    申请日：2005-07-01

    申请人： Yiming Huai ,  Dmytro Apalkov

    发明人： Yiming Huai ,  Dmytro Apalkov

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： G11C11/16

    摘要： A method and system for providing a magnetic element are disclosed. The method and system include providing a magnetic biasing structure having a first pinned layer, a second pinned layer, a spacer layer, and a free layer. The first pinned layer has a first magnetization pinned in a first direction. The second pinned layer has a second magnetization in a second direction that is substantially perpendicular or along the first direction. The spacer layer is nonferromagnetic, resides between the second pinned layer and the free layer, and is configured such that the free layer is substantially free of exchange coupling with the second pinned layer. The free layer has a shape anisotropy with a longitudinal direction substantially in the second direction. The magnetic biasing structure provides a bias field for the free layer along the hard or easy axis. In one aspect, the second pinned layer resides between the first pinned layer and the free layer.

    摘要翻译： 公开了一种用于提供磁性元件的方法和系统。 该方法和系统包括提供具有第一被钉扎层，第二钉扎层，间隔层和自由层的磁偏置结构。 第一固定层具有沿第一方向固定的第一磁化。 第二被钉扎层在基本垂直或沿第一方向的第二方向上具有第二磁化强度。 间隔层是非铁磁性的，位于第二被钉扎层和自由层之间，并且被配置为使得自由层基本上不与第二被钉扎层的交换耦合。 自由层具有基本上在第二方向上的纵向方向的形状各向异性。 磁偏置结构为沿着硬轴或易轴提供自由层的偏置场。 在一个方面，第二被钉扎层位于第一被钉扎层和自由层之间。

    Method and system for providing magnetic junctions having improved characteristics
    55.
    发明授权
    Method and system for providing magnetic junctions having improved characteristics 有权
    提供具有改进特性的磁结的方法和系统

    公开(公告)号：US08710602B2

    公开(公告)日：2014-04-29

    申请号：US13332305

    申请日：2011-12-20

    申请人： Xueti Tang ,  Dmytro Apalkov ,  Steven M. Watts ,  Kiseok Moon ,  Vladimir Nikitin

    发明人： Xueti Tang ,  Dmytro Apalkov ,  Steven M. Watts ,  Kiseok Moon ,  Vladimir Nikitin

    IPC分类号： H01L43/08

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/5607 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/3295

    摘要： A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, a free layer, at least one insulating layer, and at least one magnetic insertion layer adjoining the at least one insulating layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The at least one insulating layer is adjacent to at least one of the free layer and the pinned layer. The at least one magnetic insertion layer adjoins the at least one insulating layer. In some aspects, the insulating layer(s) include at least one of magnesium oxide, aluminum oxide, tantalum oxide, ruthenium oxide, titanium oxide, and nickel oxide The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

    摘要翻译： 一种方法和系统提供可用于磁性装置的磁结。 磁结包括钉扎层，非磁性间隔层，自由层，至少一个绝缘层以及与至少一个绝缘层邻接的至少一个磁性插入层。 非磁性间隔层位于被钉扎层和自由层之间。 至少一个绝缘层与自由层和钉扎层中的至少一个相邻。 所述至少一个磁性插入层邻接所述至少一个绝缘层。 在一些方面，绝缘层包括氧化镁，氧化铝，氧化钽，氧化钌，氧化钛和氧化镍中的至少一种。磁结被构造成使得自由层可在多个稳定的 写入电流通过磁性结时的磁状态。

    MAGNETIC ELEMENT HAVING PERPENDICULAR ANISOTROPY WITH ENHANCED EFFICIENCY
    56.
    发明申请
    MAGNETIC ELEMENT HAVING PERPENDICULAR ANISOTROPY WITH ENHANCED EFFICIENCY 有权
    具有增强效率的均匀性的磁性元件

    公开(公告)号：US20130177781A1

    公开(公告)日：2013-07-11

    申请号：US13779734

    申请日：2013-02-27

    申请人： Roman Chepulskyy ,  Dmytro Apalkov

    发明人： Roman Chepulskyy ,  Dmytro Apalkov

    IPC分类号： H01F1/01 ,  H01F10/32

    CPC分类号： H01F1/01 ,  B82Y25/00 ,  G01R33/091 ,  G01R33/098 ,  G11C11/16 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01F10/3286 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114 ,  Y10T428/115

    摘要： A material composition for forming a free layer in a STT structure (such as a single or dual MTJ structure) can include CoxFeyMz, where M is a non-magnetic material that assists in forming a good crystalline orientation and matching between the free layer and an MgO interface. The material M preferably either does not segregate to the MgO interface or, if it does segregate to the MgO interface, it does not significantly reduce the PMA of the free layer. The free layer can further include a connecting layer, where M is attracted to the insertion layer during annealing. The free layer can include a graded composition of CoxFeyMz, where z changes within the free layer.

    摘要翻译： 用于在STT结构（例如单个或双重MTJ结构）中形成自由层的材料组合物可以包括CoxFeyMz，其中M是有助于形成良好的晶体取向的非磁性材料，并且自由层与 MgO界面。 材料M优选不分离到MgO界面，或者如果它分离到MgO界面，则其不会显着降低自由层的PMA。 自由层还可包括连接层，其中M在退火期间被吸引到插入层。 自由层可以包括CoxFeyMz的分级组成，其中z在自由层内变化。

    Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories
    57.
    发明授权
    Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories 有权
    用于提供可用于自旋转移转矩磁存储器中的双磁隧道结的方法和系统

    公开(公告)号：US08456882B2

    公开(公告)日：2013-06-04

    申请号：US13415261

    申请日：2012-03-08

    申请人： Dmytro Apalkov ,  Vladimir Nikitin ,  David Druist ,  Steven M. Watts

    发明人： Dmytro Apalkov ,  Vladimir Nikitin ,  David Druist ,  Steven M. Watts

    IPC分类号： G11C5/08 ,  G11C11/06 ,  G11C11/14 ,  G11C11/15

    CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/5607 ,  H01L43/08

    摘要： A method and system for providing a magnetic junction usable in a magnetic memory are described. The magnetic junction includes first and second pinned layers, first and second nonmagnetic spacer layers, and a free layer. The first pinned layer has a first pinned layer magnetic moment and is nonmagnetic layer-free. The first nonmagnetic spacer layer resides between the first pinned and free layers. The free layer resides between the first and second nonmagnetic spacer layers. The second pinned layer has a second pinned layer magnetic moment and is nonmagnetic layer-free. The second nonmagnetic spacer layer resides between the free and second pinned layers. The first and second pinned layer magnetic moments are antiferromagnetically coupled and self-pinned. The magnetic junction is configured to allow the free layer to be switched between stable magnetic states when a write current is passed through the magnetic junction.

    摘要翻译： 描述了一种用于提供可用于磁存储器中的磁结的方法和系统。 磁结包括第一和第二固定层，第一和第二非磁性间隔层和自由层。 第一被钉扎层具有第一钉扎层磁矩并且是非磁性层。 第一非磁性间隔层位于第一被钉扎层和自由层之间。 自由层位于第一和第二非磁性间隔层之间。 第二被钉扎层具有第二钉扎层磁矩并且是非磁性层。 第二非磁性间隔层位于自由和第二被钉扎层之间。 第一和第二钉扎层磁矩是反铁磁耦合和自固定的。 磁结被配置为当写入电流通过磁性结时，允许自由层在稳定的磁状态之间切换。

    Method and system for providing magnetic tunneling junction elements having a biaxial anisotropy
    58.
    发明授权
    Method and system for providing magnetic tunneling junction elements having a biaxial anisotropy 有权
    用于提供具有双轴各向异性的磁性隧道连接元件的方法和系统

    公开(公告)号：US08374048B2

    公开(公告)日：2013-02-12

    申请号：US12854628

    申请日：2010-08-11

    申请人： Dmytro Apalkov

    发明人： Dmytro Apalkov

    IPC分类号： G11C11/06

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/3295

    摘要： A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer has a magnetic anisotropy, at least a portion of which is a biaxial anisotropy. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

    摘要翻译： 描述了一种用于提供可用于磁性装置中的磁结的方法和系统。 磁结包括钉扎层，非磁性间隔层和自由层。 非磁性间隔层位于被钉扎层和自由层之间。 自由层具有磁各向异性，其至少一部分是双轴各向异性的。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

    METHOD AND SYSTEM FOR PROVIDING SPIN TRANSFER BASED LOGIC DEVICES
    60.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING SPIN TRANSFER BASED LOGIC DEVICES 有权
    用于提供基于转移的转移逻辑器件的方法和系统

    公开(公告)号：US20120299620A1

    公开(公告)日：2012-11-29

    申请号：US13562038

    申请日：2012-07-30

    申请人： Dmytro Apalkov ,  David Druist

    发明人： Dmytro Apalkov ,  David Druist

    IPC分类号： H03K19/173 ,  H01R43/00

    CPC分类号： H03K19/20 ,  Y10T29/49117

    摘要： A logic device is described. The logic device includes magnetic input/channel regions, magnetic sensor region(s), and sensor(s) coupled with the magnetic sensor region(s). Each magnetic input/channel region is magnetically biased in a first direction. The magnetic sensor region(s) are magnetically biased in a second direction different from the first direction such that domain wall(s) reside in the magnetic input/channel regions if the logic device is in a quiescent state. The sensor(s) output a signal based on a magnetic state of the magnetic sensor region(s). The input/channel regions and the magnetic sensor region(s) are configured such that the domain wall(s) may move into the magnetic sensor region(s) in response to a logic signal being provided to the magnetic input region(s). The magnetic input/channel region(s) include FexCoyNizM1q1M2q2, with x+y+z+q1+q2=1, x, y, z, q1, q2 at least zero and M1 and M2 being nonmagnetic.

    摘要翻译： 描述逻辑设备。 逻辑器件包括磁性输入/沟道区域，磁性传感器区域和与磁性传感器区域耦合的传感器。 每个磁性输入/沟道区域在第一方向上被磁偏置。 磁传感器区域在不同于第一方向的第二方向上被磁偏置，使得如果逻辑器件处于静止状态，则域壁驻留在磁性输入/沟道区域中。 传感器基于磁传感器区域的磁状态输出信号。 输入/通道区域和磁性传感器区域被配置为使得响应于提供给磁性输入区域的逻辑信号，畴壁可以移动到磁性传感器区域中。 磁性输入/通道区域包括FexCoyNizM1q1M2q2，x + y + z + q1 + q2 = 1，x，y，z，q1，q2至少为零，M1和M2为非磁性。