IMAGE SENSOR WITH DISTANCE SENSING FUNCTION AND OPERATING METHOD THEREOF

    公开(公告)号:US20200351462A1

    公开(公告)日:2020-11-05

    申请号:US16843912

    申请日:2020-04-09

    摘要: An image sensor with a distance sensing function and an operating method thereof are provided. The image sensor includes a pixel array, a cluster analog to digital converter readout circuit, and a column readout circuit. The pixel array includes a plurality of sub-pixel groups arranged in an array. The plurality of sub-pixel groups are spaced apart from each other by a circuit layout area. The cluster analog to digital converter readout circuit is disposed in the circuit layout area of the pixel array. A distance sensing pixel of each of the plurality of sub-pixel groups is configured to perform time-of-flight ranging. The column readout circuit is disposed adjacent to the pixel array. A plurality of image sensing pixels of each of plurality of the sub-pixel groups are configured to perform image sensing.

    Integrated circuit having optical structure

    公开(公告)号:US10811548B2

    公开(公告)日:2020-10-20

    申请号:US16368881

    申请日:2019-03-29

    IPC分类号: H01L31/0232 H01L31/02

    摘要: An integrated circuit having an optical structure is provided. The integrated circuit includes a semiconductor substrate and a plurality of light guiding pattern layers. The light guiding pattern layers are located above the semiconductor substrate, and each of the light guiding pattern layers has a plurality of openings and a plurality of side wall portions corresponding to the openings. Each of the side wall portions surrounds the corresponding opening. A projection of one of the openings of one of the light guiding pattern layers on the semiconductor substrate at least partially overlaps a projection of one of the openings of the adjacent light guiding pattern layer on the semiconductor substrate, so as to form at least one light via hole and allow external light to be transferred to the semiconductor substrate through the light guiding pattern layers.

    Visible light communication sensor
    54.
    发明授权

    公开(公告)号:US10785434B2

    公开(公告)日:2020-09-22

    申请号:US16507044

    申请日:2019-07-10

    摘要: A visible light communication sensor is provided. The visible light communication sensor includes a sensing module, an image data readout circuit, and a visible light communication data readout circuit. The sensing module includes a plurality of pixel units arranged in an array. When the sensing module performs an image sensing operation, a first portion of the pixel units performs an image sensing operation, and the image data readout circuit is idle. When the sensing module performs a visible light communication operation, a second portion of the plurality of pixel units receives a visible light communication signal, so that the visible light communication data readout circuit outputs the visible light communication data, and the image data readout circuit performs an analog-to-digital conversion on a plurality of image sensing signals outputted by the first portion of the plurality of pixel units performed in the image sensing operation to output image sensing data.

    IMAGE SENSOR AND PIXEL ARRAY CIRCUIT THEREOF
    55.
    发明申请

    公开(公告)号:US20200021768A1

    公开(公告)日:2020-01-16

    申请号:US16402254

    申请日:2019-05-03

    摘要: An image sensor and a pixel array circuit thereof are provided. The image sensor includes the pixel array circuit and a readout circuit. The pixel array circuit includes pixel units. Each pixel unit includes a photo sensor, N storages, N transmission circuits, and M floating diffusion nodes. The N storages are coupled to the photo sensor and configured to store charges accumulated by the photo sensor at different exposures. Each transmission circuit is coupled between a corresponding storage and a corresponding floating diffusion node, and controlled by one of N transmission control signals to transmit the charges of the corresponding storage to the corresponding floating diffusion node during a certain time period. The readout circuit is coupled to the M floating diffusion nodes and configured to obtain N digital pixel values respectively corresponding to N image frames according to voltages of the M floating diffusion nodes of each pixel unit.

    DISPLAY DEVICE CAPABLE OF IN-DISPLAY SENSING
    56.
    发明公开

    公开(公告)号:US20240153457A1

    公开(公告)日:2024-05-09

    申请号:US18497010

    申请日:2023-10-30

    IPC分类号: G09G3/3233

    摘要: The present invention is related to a display device, including: a plurality of sub-pixel areas, each including a pixel circuit, each pixel circuit including: a diode, configured to be in a forward-biasing state during a display phase of the pixel circuit for light-emitting and configured to be in a reverse-biasing state in a sensing phase of the pixel circuit for light-sensing; a driving transistor for driving the diode during the display phase and serving as a source follower in the sensing phase; first to sixth transistors, applied to the gates of the first to sixth transistors respectively so that the pixel circuit switching between the display phase and the sensing phase; and a capacitor for storing a data voltage to be written to the diode in the display phase and storing the charge accumulated by the diode in the sensing phase.

    DISPLAY DEVICE CAPABLE OF IN-DISPLAY SENSING
    57.
    发明公开

    公开(公告)号:US20240153447A1

    公开(公告)日:2024-05-09

    申请号:US18500168

    申请日:2023-11-02

    IPC分类号: G09G3/32

    摘要: The present invention is related to a display device, including: a plurality of sub-pixel areas, each including a sub-pixel circuit, each sub-pixel circuit including: a diode, configured to be in a forward-biasing state during a displaying phase of the sub-pixel circuit for emitting light and configured to be in a reverse-biasing state for sensing light of the sub-pixel circuit in a sensing phase; a driving transistor for driving the diode during the display phase; first to sixth transistors, gate control signals are applied to gates of the first to sixth transistors respectively, so that the sub-pixel circuit switching between the display phase and the sensing phase; and a capacitor for storing a data voltage to be written to the diode in the display phase, wherein in the sensing phase the diode generates a photocurrent to an operational amplifier, such that the operational amplifier outputs a photocurrent output signal.

    IMAGE SENSOR AND OPERATION METHOD THEREOF
    59.
    发明公开

    公开(公告)号:US20230370751A1

    公开(公告)日:2023-11-16

    申请号:US18304323

    申请日:2023-04-20

    IPC分类号: H04N25/78 H04N25/77

    CPC分类号: H04N25/78 H04N25/77

    摘要: An image sensor and an operation method thereof are provided. The image sensor includes a pixel circuit and a column readout circuit. The pixel circuit includes a pixel unit, a transfer transistor, a reset transistor, a readout transistor and a selection transistor. The column readout circuit includes a first circuit node and a second circuit node. A first terminal of the first reset transistor and a first terminal of the first readout transistor are coupled to a first circuit node, and a second terminal of the first select transistor is coupled to a second circuit node.

    IMAGE SENSOR AND OPERATION METHOD THEREOF
    60.
    发明公开

    公开(公告)号:US20230370750A1

    公开(公告)日:2023-11-16

    申请号:US18303586

    申请日:2023-04-20

    IPC分类号: H04N25/78 H04N25/709

    CPC分类号: H04N25/78 H04N25/709

    摘要: An image sensor and an operating method thereof are provided. The image sensor includes a first pixel circuit, a first column readout circuit, and a second column readout circuit. The first pixel circuit includes a first pixel unit, a first transfer transistor, a first reset transistor, a first readout transistor, and a first capacitor. The first column readout circuit includes a first circuit node. The second column readout circuit includes a bias transistor. A first terminal of the first reset transistor and a first terminal of the first readout transistor are coupled to the first circuit node, and a second terminal of the first readout transistor is coupled to the bias transistor.