公开(公告)号：US5126169A

公开(公告)日：1992-06-30

申请号：US639410

申请日：1991-01-10

申请人： Shunichi Ishihara ,  Hisanori Tsuda ,  Masahiro Kanai ,  Masafumi Sano

发明人： Shunichi Ishihara ,  Hisanori Tsuda ,  Masahiro Kanai ,  Masafumi Sano

IPC分类号： C23C16/452 ,  G03G5/082

CPC分类号： C23C16/452 ,  G03G5/08278

摘要： A process for forming a deposited film on a substrate which comprises introducing plural kinds of precursors formed in activation spaces (B), as starting materials for a deposited film and an active species formed in an activation space (C) which is to react with at least two kinds among said plural kinds of precursors respectively at different reaction rates into a deposition space (A) for forming a deposited film on a substrate, wherein the precursor having a property of reacting with said active species at a lower reaction rate is mixed with said active species at an upper stream position as compared with the precursor having a property of reacting with said active species at a higher reaction rate.

摘要翻译： 一种在基板上形成沉积膜的方法，包括引入在活化空间（B）中形成的多种前体，作为沉积膜的起始材料和形成于活化空间（C）中的活性物质，活化空间（C） 所述多种前体中的至少两种前体分别以不同的反应速率转化成用于在基底上形成沉积膜的沉积空间（A），其中具有与所述活性物质以较低反应速率反应的性质的前体与 所述活性物质在上游位置与前体相比具有与所述活性物质以更高反应速率反应的性质。

公开(公告)号：US4906542A

公开(公告)日：1990-03-06

申请号：US183998

申请日：1988-04-20

申请人： Tatsuyuki Aoike ,  Masafumi Sano ,  Takehito Yoshino ,  Toshimitsu Kariya ,  Hiroaki Niino

发明人： Tatsuyuki Aoike ,  Masafumi Sano ,  Takehito Yoshino ,  Toshimitsu Kariya ,  Hiroaki Niino

IPC分类号： G03G5/082

CPC分类号： G03G5/08214

摘要： A light receiving member for electrophotography made up of an aluminum support and a multilayered light receiving layer exhibiting photoconductivity formed on the aluminum support, wherein the multilayered light receiving layer consists of a lower layer in contact with the support and an upper layer, the lower layer being made of an inorganic material containing at least aluminum atom (Al), silicon atoms (Si) and hydrogen atoms (H), and having portion in which the aluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H) are unevenly distributed across the layer thickness, the upper layer being made of a non-single-crystal material composed of silicon atoms (Si) as the matrix and at least either of hydrogen atoms (H) or halogen atoms (X) and containing at least one of carbon atoms, nitrogen atoms (N) and oxygen atoms (O) in the layer region in adjacent with the lower layer. The light receiving member for electrophotography can overcome all of the foregoing problems and exhibits extremely excellent electrical property, optical property, photoconductivity, durability, image property and circumstantial property of use.

公开(公告)号：US08507910B2

公开(公告)日：2013-08-13

申请号：US12520944

申请日：2008-01-17

申请人： Masato Ofuji ,  Katsumi Abe ,  Masafumi Sano ,  Hideya Kumomi ,  Ryo Hayashi

发明人： Masato Ofuji ,  Katsumi Abe ,  Masafumi Sano ,  Hideya Kumomi ,  Ryo Hayashi

IPC分类号： H01L29/00

CPC分类号： H01L27/3265 ,  H01L27/3248 ,  H01L2227/323 ,  H01L2251/5323

摘要： An active matrix display apparatus includes a transistor, a storage capacitor, and a light-emitting element formed on a substrate. The transistor includes a source electrode, a drain electrode, and a gate electrode. The storage capacitor has a multilayered structure of a first electrode, a dielectric layer, and a second electrode stacked in this order on the substrate, and the light-emitting element has a multilayered structure of a third electrode, a light-emitting layer, and a fourth electrode stacked in this order on the substrate. The first electrode is electrically connected to the gate electrode of the transistor, and at least a part of the storage capacitor is disposed between the substrate and the light-emitting element. All of the substrate, the first electrode, the second electrode, and the third electrode are formed from a material transmitting a visible light emitted by the light-emitting element. Viewing from a top of the substrate, a region for storing charges in the storage capacitor includes or is equal to a light-emitting region of the light-emitting element.

摘要翻译： 有源矩阵显示装置包括晶体管，存储电容器和形成在基板上的发光元件。 晶体管包括源电极，漏电极和栅电极。 存储电容器具有在基板上依次层叠的第一电极，电介质层和第二电极的多层结构，并且发光元件具有第三电极，发光层和多层结构的多层结构 在基板上依次层叠的第四电极。 第一电极电连接到晶体管的栅电极，并且至少一部分存储电容器设置在基板和发光元件之间。 所有的基板，第一电极，第二电极和第三电极由透射由发光元件发出的可见光的材料形成。 从基板的顶部观察，用于在存储电容器中存储电荷的区域包括或等于发光元件的发光区域。

公开(公告)号：US08415198B2

公开(公告)日：2013-04-09

申请号：US12374665

申请日：2007-07-26

申请人： Naho Itagaki ,  Toru Den ,  Nobuyuki Kaji ,  Ryo Hayashi ,  Masafumi Sano

发明人： Naho Itagaki ,  Toru Den ,  Nobuyuki Kaji ,  Ryo Hayashi ,  Masafumi Sano

IPC分类号： H01L21/00

CPC分类号： H01L29/7869

摘要： A production method of a thin film transistor including an active layer including an amorphous oxide semiconductor film, wherein a step of forming the active layer includes a first step of forming the oxide film in an atmosphere having an introduced oxygen partial pressure of 1×10−3 Pa or less, and a second step of annealing the oxide film in an oxidative atmosphere after the first step.

摘要翻译： 1.一种薄膜晶体管的制造方法，其特征在于，具备包含非晶形氧化物半导体膜的有源层的薄膜晶体管，其特征在于，形成有源层的工序包括在引入氧分压为1×10 -5的气氛中形成氧化膜的第1工序， 3Pa以下，以及在第一工序后的氧化性气氛中退火氧化膜的第二工序。

公开(公告)号：US07923723B2

公开(公告)日：2011-04-12

申请号：US12281783

申请日：2007-02-23

申请人： Ryo Hayashi ,  Katsumi Abe ,  Masafumi Sano

发明人： Ryo Hayashi ,  Katsumi Abe ,  Masafumi Sano

IPC分类号： H01L29/786 ,  H01L31/0376 ,  H01L29/04

CPC分类号： H01L29/7869 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/28202 ,  H01L29/4908 ,  H01L29/518 ,  H01L29/66969

摘要： The thin-film transistor of the present invention has at least a semiconductor layer including: on a substrate, a source electrode, a drain electrode, and a channel region; a gate insulating film; and a gate electrode, wherein the semiconductor layer is an oxide semiconductor layer, and wherein the gate insulating film is amorphous silicon including at least O and N, and the gate insulating film has a distribution of an oxygen concentration in a thickness direction so that the oxygen concentration is high in the side of an interface with an oxide semiconductor layer and the oxygen concentration decreases toward the side of the gate electrode.

摘要翻译： 本发明的薄膜晶体管至少具有半导体层，该半导体层包括：基板，源电极，漏电极和沟道区; 栅极绝缘膜; 以及栅电极，其中所述半导体层是氧化物半导体层，并且其中所述栅极绝缘膜是至少包括至少O和N的非晶硅，并且所述栅极绝缘膜具有在厚度方向上的氧浓度的分布，使得 在与氧化物半导体层的界面侧的氧浓度高，并且氧浓度朝向栅电极侧减小。

公开(公告)号：US20100085081A1

公开(公告)日：2010-04-08

申请号：US12597211

申请日：2008-05-15

申请人： Masato Ofuji ,  Katsumi Abe ,  Ryo Hayashi ,  Masafumi Sano ,  Hideya Kumomi

发明人： Masato Ofuji ,  Katsumi Abe ,  Ryo Hayashi ,  Masafumi Sano ,  Hideya Kumomi

IPC分类号： H03K19/20 ,  H03K19/0944 ,  H01L21/8254 ,  H01L21/8236 ,  H01L21/42

CPC分类号： H01L29/7869 ,  H01L27/1233

摘要： To provide an enhancement-depletion (E/D) inverter which can be easily manufactured, in the present invention, a method of manufacturing an inverter which is composed of an oxide semiconductor in which a channel layer includes at least one element selected from In, Ga and Zn formed on a same substrate, the inverter being the E/D inverter having plural thin film transistors, is characterized by comprising the steps of: forming a first transistor and a second transistor, the thicknesses of the channel layers of the first and second transistors being mutually different; and executing heat treatment to at least one of the channel layers of the first and second transistors.

摘要翻译： 为了提供易于制造的增强耗尽（E / D）逆变器，在本发明中，制造由氧化物半导体构成的逆变器的制造方法，其中沟道层包括选自In， Ga和Zn形成在同一衬底上，所述逆变器是具有多个薄膜晶体管的E / D逆变器，其特征在于包括以下步骤：形成第一晶体管和第二晶体管，第一和第二晶体管的沟道层的厚度 第二晶体管是相互不同的; 以及对所述第一和第二晶体管的至少一个沟道层执行热处理。

公开(公告)号：US20090325341A1

公开(公告)日：2009-12-31

申请号：US12374665

申请日：2007-07-26

申请人： Naho Itagaki ,  Toru Den ,  Nobuyuki Kaji ,  Ryo Hayashi ,  Masafumi Sano

发明人： Naho Itagaki ,  Toru Den ,  Nobuyuki Kaji ,  Ryo Hayashi ,  Masafumi Sano

IPC分类号： H01L21/336

CPC分类号： H01L29/7869

摘要： A production method of a thin film transistor including an active layer including an amorphous oxide semiconductor film, wherein a step of forming the active layer includes a first step of forming the oxide film in an atmosphere having an introduced oxygen partial pressure of 1×10−3 Pa or less, and a second step of annealing the oxide film in an oxidative atmosphere after the first step.

摘要翻译： 一种薄膜晶体管的制造方法，其特征在于，具备包含非晶形氧化物半导体膜的活性层的薄膜晶体管，其特征在于，形成有源层的工序包括在导入氧分压为1×10 -3 Pa的气氛中形成氧化膜的第1工序 以及在第一工序后的氧化性气氛中退火氧化膜的第二工序。

公开(公告)号：US07601984B2

公开(公告)日：2009-10-13

申请号：US11269600

申请日：2005-11-09

申请人： Masafumi Sano ,  Katsumi Nakagawa ,  Hideo Hosono ,  Toshio Kamiya ,  Kenji Nomura

发明人： Masafumi Sano ,  Katsumi Nakagawa ,  Hideo Hosono ,  Toshio Kamiya ,  Kenji Nomura

IPC分类号： H01L29/04

CPC分类号： H01L29/78693 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/02631 ,  H01L21/428 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

摘要： A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.

摘要翻译： 提供了可应用于例如TFT的有源层的新颖的无定形氧化物。 无定形氧化物包括微晶。

公开(公告)号：US20090102829A1

公开(公告)日：2009-04-23

申请号：US11683872

申请日：2007-03-08

申请人： Katsumi Abe ,  Hideya Kumomi ,  Ryo Hayashi ,  Masafumi Sano

发明人： Katsumi Abe ,  Hideya Kumomi ,  Ryo Hayashi ,  Masafumi Sano

IPC分类号： G06F3/038 ,  G09G3/20

CPC分类号： G09G3/325 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2320/043

摘要： A pixel circuit and an image display apparatus are provided making use of a hysteresis characteristics of a transistor for driving a display element. The pixel circuit comprises: a transistor providing both different first and second relations between a gate voltage value and a drain current value at a transition from off state to an on state, and from the on state transits to the off state respectively; a display element supplied as a drive current with a current controlled by the transistor; and a capacitor element connected to a gate electrode of the transistor. One of the first and second relations is utilized during a first period for setting the drive current to be supplied to the display element. And, the other of the first and second relations is utilized during a second period for supplying the drive current to the display element to effect light emission.

摘要翻译： 使用用于驱动显示元件的晶体管的滞后特性来提供像素电路和图像显示装置。 像素电路包括：晶体管，在从断开状态转换到导通状态时，分别在栅极电压值和漏极电流值之间分别具有不同的第一和第二关系，以及从导通状态转移到断开状态。 以由晶体管控制的电流作为驱动电流提供的显示元件; 以及连接到晶体管的栅电极的电容器元件。 第一和第二关系中的一个在第一时段期间被利用来设定要提供给显示元件的驱动电流。 并且，在第二时段期间利用第一和第二关系中的另一个来向显示元件提供驱动电流以实现发光。

公开(公告)号：US20070090365A1

公开(公告)日：2007-04-26

申请号：US11583022

申请日：2006-10-19

申请人： Ryo Hayashi ,  Masafumi Sano ,  Katsumi Abe ,  Hideya Kumomi ,  Kojiro Nishi

发明人： Ryo Hayashi ,  Masafumi Sano ,  Katsumi Abe ,  Hideya Kumomi ,  Kojiro Nishi

IPC分类号： H01L29/04

CPC分类号： H01L29/78633 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/3248 ,  H01L27/3272 ,  H01L29/7869 ,  H01L29/78693 ,  H01L2251/5338

摘要： A field-effect transistor includes a substrate, a source electrode, a drain electrode, a gate electrode, a gate-insulating film, and an active layer. The active layer contains an oxide having a transmittance of 70% or more in the wavelength range of 400 to 800 nm. A light-shielding member is provided as a light-shielding structure for the active layer, for example, on the bottom face of the substrate.

摘要翻译： 场效应晶体管包括衬底，源电极，漏电极，栅电极，栅极绝缘膜和有源层。 有源层含有在400〜800nm的波长范围内透过率为70％以上的氧化物。 作为有源层的遮光结构，例如在基板的底面设置遮光部件。