公开(公告)号：US5126169A

公开(公告)日：1992-06-30

申请号：US639410

申请日：1991-01-10

申请人： Shunichi Ishihara ,  Hisanori Tsuda ,  Masahiro Kanai ,  Masafumi Sano

发明人： Shunichi Ishihara ,  Hisanori Tsuda ,  Masahiro Kanai ,  Masafumi Sano

IPC分类号： C23C16/452 ,  G03G5/082

CPC分类号： C23C16/452 ,  G03G5/08278

摘要： A process for forming a deposited film on a substrate which comprises introducing plural kinds of precursors formed in activation spaces (B), as starting materials for a deposited film and an active species formed in an activation space (C) which is to react with at least two kinds among said plural kinds of precursors respectively at different reaction rates into a deposition space (A) for forming a deposited film on a substrate, wherein the precursor having a property of reacting with said active species at a lower reaction rate is mixed with said active species at an upper stream position as compared with the precursor having a property of reacting with said active species at a higher reaction rate.

摘要翻译： 一种在基板上形成沉积膜的方法，包括引入在活化空间（B）中形成的多种前体，作为沉积膜的起始材料和形成于活化空间（C）中的活性物质，活化空间（C） 所述多种前体中的至少两种前体分别以不同的反应速率转化成用于在基底上形成沉积膜的沉积空间（A），其中具有与所述活性物质以较低反应速率反应的性质的前体与 所述活性物质在上游位置与前体相比具有与所述活性物质以更高反应速率反应的性质。

公开(公告)号：US5028488A

公开(公告)日：1991-07-02

申请号：US226819

申请日：1988-08-01

申请人： Katsumi Nakagawa ,  Shunichi Ishihara ,  Masahiro Kanai ,  Tsutomu Murakami ,  Kozo Arao ,  Yasushi Fujioka

发明人： Katsumi Nakagawa ,  Shunichi Ishihara ,  Masahiro Kanai ,  Tsutomu Murakami ,  Kozo Arao ,  Yasushi Fujioka

IPC分类号： C30B33/00 ,  C30B29/22 ,  C30B29/30 ,  C30B33/02 ,  G02F1/03 ,  G02F1/05 ,  H01L21/205 ,  H01L21/365 ,  H01L31/0248 ,  H01L31/0296 ,  H01L31/0392 ,  H01L31/04 ,  H01L31/068 ,  H01L31/18

CPC分类号： H01L31/1832 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L31/02966 ,  H01L31/0392 ,  H01L31/068 ,  Y02E10/547 ,  Y10T428/31678

摘要： A functional ZnSe.sub.1-x Te.sub.x :H film having a high doping efficiency and with no substantial change in the characteristics upon light irradiation. Said film is characterized in that the Se/Te quantitative ratio is in the range from 3:7 to 1:9 by the atom number ratio, hydrogen atoms are contained in an amount of 1 to 4 atomic % and the ratio of the crystal grain domains per unit volume is in the range from 65 to 85% by volume. There are also provided improved p-type and n-type ZnSe.sub.1-x Te.sub.x :H:M films (M stands for a dopant) of high electroconductivity characterized in the foregoing way.These deposited films may be efficiently deposited even on a non-single crystal substrate made of metal, glass or synthetic resin with a high deposition rate.These films are suited for the preparation of a high functional device such as a photovoltaic element.

摘要翻译： 功能性ZnSe1-xTex：H膜具有高的掺杂效率，并且在光照射下的特性没有显着变化。 所述膜的特征在于Se / Te的定量比在3:7至1:9的范围内以原子数比计，氢原子的含量为1至4原子％，晶粒的比例 每单位体积的畴数在65至85体积％范围内。 还提供了以上述方式表征的改进的高导电性的p型和n型ZnSe1-xTex：H：M膜（M代表掺杂剂）。 这些沉积膜即使在金属，玻璃或合成树脂制成的非单晶衬底上也可以高沉积速率。 这些膜适用于制备诸如光电元件的高功能器件。

公开(公告)号：US5008726A

公开(公告)日：1991-04-16

申请号：US273070

申请日：1988-11-18

申请人： Katsumi Nakagawa ,  Shunichi Ishihara ,  Masahiro Kanai ,  Tsutomu Murakami ,  Kozo Arao ,  Yasushi Fujioka ,  Akira Sakai

发明人： Katsumi Nakagawa ,  Shunichi Ishihara ,  Masahiro Kanai ,  Tsutomu Murakami ,  Kozo Arao ,  Yasushi Fujioka ,  Akira Sakai

IPC分类号： H01L31/0296 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/18

CPC分类号： H01L31/076 ,  H01L31/02963 ,  H01L31/02966 ,  H01L31/0392 ,  H01L31/03925 ,  H01L31/075 ,  H01L31/1832 ,  Y02E10/548

摘要： An improved pin junction photovoltaic element which causes photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type semiconductor layer and said n-type semiconductor layer comprises a p-typed or n-typed ZSnSe.sub.1-x Te.sub.x :H:M film, where M is a dopant of p-type or n-type: the quantitative ratio of the Se to the Te is in the range of from 1:9 to 3:7 in terms of atomic ratio: the amount of the H is in the range of from 1 to 4 atomic %: and said film contains crystal grain domains in a proportion of 65 to 85 vol % per unit volume; and said i-type semiconductor layer comprises a non-single crystal Si(H,F) film or a non-single crystal Si(C,Ge)(H,F) film.

公开(公告)号：US4959106A

公开(公告)日：1990-09-25

申请号：US399396

申请日：1989-08-28

申请人： Katsumi Nakagawa ,  Masahiro Kanai ,  Shunichi Ishihara ,  Kozo Arao ,  Yasushi Fujioka ,  Akira Sakai ,  Tsutomu Murakami

发明人： Katsumi Nakagawa ,  Masahiro Kanai ,  Shunichi Ishihara ,  Kozo Arao ,  Yasushi Fujioka ,  Akira Sakai ,  Tsutomu Murakami

IPC分类号： H01L21/363 ,  H01L21/365 ,  H01L31/0296 ,  H01L31/068 ,  H01L31/18

CPC分类号： H01L31/073 ,  H01L21/0237 ,  H01L21/02554 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L31/02963 ,  H01L31/02966 ,  H01L31/068 ,  H01L31/1828 ,  H01L31/1832 ,  Y02E10/543 ,  Y02E10/547

摘要： A photovoltaic element which generates photoelectromotive force by the contact of a p-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said semiconductor layers is made up from a deposited film composed of zinc atoms, selenium atoms, optional tellurium atoms, and at least hydrogen atoms, said deposited film containing a p-type or n-type doping agent, containing 1 to 4 atomic % of hydrogen atoms, containing selenium atoms and tellurium atoms in a ratio of 1:9 to 3:7 (in terms of number of atoms), and also containing crystal grains in a ratio of 65 to 85 vol % per unit volume.

摘要翻译： 1.一种通过p型半导体层和n型半导体层的连接产生光电动势的光电元件，其特征在于，所述半导体层中的至少一个由锌原子，硒原子， 可选的碲原子和至少氢原子，所述沉积膜含有含有1至4原子％氢原子的p型或n型掺杂剂，其含有比例为1:9至3的硒原子和碲原子 ：7（以原子数计），并且还含有65〜85体积％的每单位体积的晶粒。

公开(公告)号：US4784874A

公开(公告)日：1988-11-15

申请号：US831448

申请日：1986-02-20

申请人： Shunichi Ishihara ,  Shigeru Ohno ,  Masahiro Kanai ,  Shunri Oda ,  Isamu Shimizu

发明人： Shunichi Ishihara ,  Shigeru Ohno ,  Masahiro Kanai ,  Shunri Oda ,  Isamu Shimizu

IPC分类号： H01L21/205 ,  B05D3/06

CPC分类号： H01L21/0237 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing carbon and halogen and an active species (B) formed from a chemical substance for film formation which is chemically mutually reactive with said active species (A) separately from each other, then providing them with heat energy and thereby allowing both the species to react chemically with each other to form a deposited film on the substrate.

摘要翻译： 用于形成沉积膜的方法包括将容纳基材的膜形成空间引入其中包含由含有碳和卤素的化合物分解形成的活性物质（A）和由用于成膜的化学物质形成的活性物质（B） 与所述活性物质（A）彼此分离地化学相互反应，然后向其提供热能，从而允许物质彼此化学反应以在基底上形成沉积膜。

公开(公告)号：US4778692A

公开(公告)日：1988-10-18

申请号：US831460

申请日：1986-02-20

申请人： Shunichi Ishihara ,  Shigeru Ohno ,  Masahiro Kanai ,  Shunri Oda ,  Isamu Shimizu

发明人： Shunichi Ishihara ,  Shigeru Ohno ,  Masahiro Kanai ,  Shunri Oda ,  Isamu Shimizu

IPC分类号： H01L21/205 ,  B05D3/06

CPC分类号： H01L21/0237 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： A process for forming a deposited film, which comprises introducing into a film forming space for formation of a deposited film on a substrate an active species (A) formed by decomposition of a compound containing silicon and a halogen and an active species (B) formed from a germanium containing compound for film formation which is chemically mutually reactive with said active species (A) separately from each other, and then permitting the above respective active species and said germanium containing compounds to react chemically with each other by excitation by irradiation of light energy thereby to form a deposited film on the above substrate.

摘要翻译： 一种用于形成沉积膜的方法，其包括在基底上引入用于在基底上形成沉积膜的成膜空间中通过分解含有硅和卤素的化合物和形成的活性物质（B）而形成的活性物质（A） 从用于成膜的含锗化合物与所述活性物质（A）彼此分开地化学相互反应，然后允许上述各种活性物质和所述含锗化合物通过光照射激发而彼此化学反应 从而在上述基板上形成沉积膜。

公开(公告)号：US4853251A

公开(公告)日：1989-08-01

申请号：US831411

申请日：1986-02-20

申请人： Shunichi Ishihara ,  Shigeru Ohno ,  Masahiro Kanai ,  Shunri Oda ,  Isamu Shimizu

发明人： Shunichi Ishihara ,  Shigeru Ohno ,  Masahiro Kanai ,  Shunri Oda ,  Isamu Shimizu

IPC分类号： C23C16/30 ,  C23C16/452 ,  G03G5/043 ,  G03G5/082 ,  G03G5/10 ,  H01L21/205 ,  H01L31/075 ,  H01L31/20

CPC分类号： G03G5/08214 ,  C23C16/30 ,  C23C16/452 ,  G03G5/0433 ,  G03G5/08278 ,  G03G5/08285 ,  G03G5/102 ,  G03G5/104 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/075 ,  H01L31/20 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521 ,  Y10S438/931

摘要： A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing carbon and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately from each other, then providing them with discharge energy and allowing both the species to react with each other thereby to form a deposited film on the substrate.

摘要翻译： 形成沉积膜的方法包括将含有碳和卤素的化合物分解形成的活性物质（A）和由用于成膜的化学物质形成的活性物质（B）引入到容纳基材的膜形成空间中 其与所述活性物质（A）彼此分开反应，然后向其提供放电能量并允许物质彼此反应，从而在基底上形成沉积膜。

公开(公告)号：US4851302A

公开(公告)日：1989-07-25

申请号：US221761

申请日：1988-07-20

申请人： Katsumi Nakagawa ,  Shunichi Ishihara ,  Kozo Arao ,  Yasushi Fujioka ,  Akira Sakai ,  Masahiro Kanai

发明人： Katsumi Nakagawa ,  Shunichi Ishihara ,  Kozo Arao ,  Yasushi Fujioka ,  Akira Sakai ,  Masahiro Kanai

IPC分类号： H01L31/04 ,  G06F9/48 ,  H01L21/205 ,  H01L21/365 ,  H01L31/0248 ,  H01L31/0296 ,  H01L31/0392 ,  H01L31/068 ,  H01L31/18

CPC分类号： H01L31/02963 ,  H01L21/0237 ,  H01L21/0256 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02631 ,  H01L31/0392 ,  H01L31/068 ,  H01L31/1828 ,  Y02E10/543 ,  Y02E10/547 ,  Y10T428/12528 ,  Y10T428/12792

摘要： There is provided a functional ZnSe:H deposited film composed of zinc atoms, selenium atoms, and at least hydrogen atoms, with the content of hydrogen atoms being 1 to 4 atomic % and the ratio of crystal grains per unit volume being 65 to 85 vol %. It is capable of efficient doping and is stable to irradiation. It can be made into a high conductivity p-type of n-type ZnSe:H:M film by doping. It can be efficiently deposited on a non-single crystal substrate such as metal, glass, and synthetic resin which was incapable of efficient depositing. Thus the invention makes it possible to form a high-functional device such as a photovoltaic element of ZnSe film on a non-single crystal substrate.

摘要翻译： 提供了由锌原子，硒原子和至少氢原子组成的功能性ZnSe：H沉积膜，氢原子的含量为1〜4原子％，单位体积的结晶比为65〜85体积％ ％。 它能够高效掺杂，对辐照稳定。 可以通过掺杂制成高导电性p型n型ZnSe：H：M膜。 它可以有效地沉积在不能有效沉积的非单晶衬底如金属，玻璃和合成树脂上。 因此，本发明使得可以在非单晶衬底上形成诸如ZnSe膜的光电元件的高功能器件。

公开(公告)号：US4726963A

公开(公告)日：1988-02-23

申请号：US61003

申请日：1987-06-09

申请人： Shunichi Ishihara ,  Shigeru Ohno ,  Masahiro Kanai ,  Shunri Oda ,  Isamu Shimizu

发明人： Shunichi Ishihara ,  Shigeru Ohno ,  Masahiro Kanai ,  Shunri Oda ,  Isamu Shimizu

IPC分类号： C23C16/22 ,  C23C16/48 ,  H01L21/205 ,  B05D3/06

CPC分类号： H01L21/0245 ,  C23C16/22 ,  C23C16/482 ,  C23C16/483 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing germanium and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately from each other, then irradiating them with light energy and thereby allowing both the species to react with each other thereby to form a deposited film on the substrate.

摘要翻译： 用于形成沉积膜的方法包括将容纳基材的成膜空间引入其中包含通过分解含有锗和卤素的化合物形成的活性物质（A）和由用于成膜的化学物质形成的活性物质（B） 其与所述活性物质（A）分开反应，然后用光能照射它们，从而允许物质彼此反应，从而在基底上形成沉积膜。

公开(公告)号：US4801468A

公开(公告)日：1989-01-31

申请号：US831704

申请日：1986-02-21

申请人： Shunichi Ishihara ,  Shigeru Ohno ,  Masahiro Kanai ,  Shunri Oda ,  Isamu Shimizu

发明人： Shunichi Ishihara ,  Shigeru Ohno ,  Masahiro Kanai ,  Shunri Oda ,  Isamu Shimizu

IPC分类号： C23C16/30 ,  C23C16/452 ,  G03G5/082 ,  H01L21/205 ,  H01L31/075 ,  H01L31/20 ,  B05D3/06

CPC分类号： G03G5/08292 ,  C23C16/30 ,  C23C16/452 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/075 ,  H01L31/20 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

摘要： A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing germanium and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately from each other, then providing them with discharge energy and thereby allowing both the species to react with each other thereby to form a deposited film on the substrate.

摘要翻译： 用于形成沉积膜的方法包括将容纳基材的成膜空间引入其中包含通过分解含有锗和卤素的化合物形成的活性物质（A）和由用于成膜的化学物质形成的活性物质（B） 其与所述活性物质（A）彼此分开反应，然后向其提供放电能量，从而允许物质彼此反应，从而在基底上形成沉积膜。