摘要:
A backlight unit that includes: an outer container; a curved fluorescent lamp that is contained in the outer container and includes two electrodes and a glass bulb that has (i) a folded portion and (ii) two straight portions that extend in parallel with each other from the folded portion, and the two electrodes being respectively attached to two ends of the glass bulb; and an inverter operable to supply power for lighting to the curved fluorescent lamp. The inverter is disposed outside the outer container, and the curved fluorescent lamp is arranged so that the electrodes are at low positions and the folded portion is at a high position in the outer container when the backlight unit is erected vertically in use.
摘要:
The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.
摘要:
A solid-state image pickup device includes a semiconductor substrate including a substrate main body having P-type impurities and a first N-type semiconductor layer provided on the substrate main body, an image pickup area including a plurality of photoelectric converters in which the plurality of photoelectric converters include second N-type semiconductor layers, the second N-type semiconductor layers being provided on a surface portion of the first N-type semiconductor layer independently of one another, and a first peripheral circuit area including a first P-type semiconductor layer formed on the first N-type semiconductor layer. The solid-state image pickup device further includes a second peripheral circuit area including a second P-type semiconductor layer formed on the first N-type semiconductor layer and connected to the substrate main body.
摘要:
The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.
摘要:
In a cluster system including a plurality of operating systems operating on one computer, computer resources can be updated for and reallocated to each operating system. When the operating systems are used as active or standby operating systems, a multiple operating system management controller monitors the state of each operating system. At a failure of an active operating system, the controller allocates a larger part of computer resources to another operating system in a normal state and assigns the operating system as a new active operating system. Regardless of the failure, the computer system can be operated without changing processing capability thereof. The controller can monitor load of each operating system to allocate computer resources to the operating system according to the load.
摘要:
In this invention, an apparatus of which the power supply is in the off state is remotely controlled through a communications network. Each of one or a plurality of controlled apparatus has a ROM for holding the MAC address of the controlled apparatus, and a network control IC that reads out the MAC address from the ROM and transmits it through a LAN to a control apparatus. The control apparatus receives the one or plurality of MAC addresses from the one or plurality of controlled apparatus through the LAN, stores the received one or plurality of MAC addresses in a cache memory and controls the one or plurality of controlled apparatus by using the one or plurality of MAC addresses stored in the cache memory.
摘要:
The present invention has an object to provide a cold-cathode fluorescent lamp which can suppress sputtering caused by electric discharge and reduce consumption of mercury so as to achieve a longer lifetime even if a lamp current is large and a lighting tube has a small diameter. The cold-cathode fluorescent lamp according to the present invention is characterized in that a distance between the inner surface of the lighting tube and the outer surface of a cylindrical electrode is set such that electric discharge develops mainly on the inner surface of the cylindrical electrode. When the lighting tube has an inside diameter D1 of 1 to 6 mm and the maximum lamp current is 5 mA or more, an outside diameter D2 of the cylinder electrode is preferably set at D1−0.4 [mm]≦D2
摘要:
The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.
摘要:
A solid state imaging device comprises a plurality of unit cells formed in a surface region of a semiconductor substrate. Each of the unit cells comprises a photoelectric converter, an MOS-type read-out transistor for reading a signal from the photoelectric converter, an MOS-type amplifying transistor having a gate connected to a drain of the read-out transistor and for amplifying the signal read by the read-out transistor, a reset transistor having a source connected to the drain of the read-out transistor and for resetting a potential of a gate of the amplifying transistor, and an addressing element connected in series to the amplifying transistor and for selecting the unit cell. The read-out transistor is formed in a first device region in the semiconductor substrate. The reset transistor is formed in a second device region in the semiconductor substrate. The drain of the read-out transistor is connected to the source of the reset transistor through a wiring layer formed on the surface of the semiconductor substrate.
摘要:
A solid-state imaging device includes a semiconductor substrate including a surface region of a second conductivity type, and plural unit pixels arranged in a matrix form on the surface region of the second conductivity type. Each of the unit pixels includes a first semiconductor region of a first conductivity type separated by a preset distance from the surface of the surface region in the depth direction and accumulates signal charges obtained by photo-electrical conversion of input light, and a gate electrode formed above the surface region, adjacent to the first semiconductor region and controlling readout of the signal charge accumulated in the first semiconductor region, end portions of the gate electrode and the first semiconductor region separated by a preset distance in a horizontal direction. Thus, the signal charge can be easily read-out and occurrence of thermal noise at the dark time, dark current noise, image-lag can be suppressed.