Computer system and a method for controlling a computer system
    2.
    发明授权
    Computer system and a method for controlling a computer system 失效
    计算机系统和计算机系统的控制方法

    公开(公告)号:US06931640B2

    公开(公告)日:2005-08-16

    申请号:US09756282

    申请日:2001-01-09

    摘要: In a cluster system including a plurality of operating systems operating on one computer, computer resources can be updated for and reallocated to each operating system. When the operating systems are used as active or standby operating systems, a multiple operating system management controller monitors the state of each operating system. At a failure of an active operating system, the controller allocates a larger part of computer resources to another operating system in a normal state and assigns the operating system as a new active operating system. Regardless of the failure, the computer system can be operated without changing processing capability thereof. The controller can monitor load of each operating system to allocate computer resources to the operating system according to the load.

    摘要翻译: 在包括在一个计算机上操作的多个操作系统的集群系统中,可以更新计算机资源并将其重新分配给每个操作系统。 当操作系统用作主动或备用操作系统时,多操作系统管理控制器监视每个操作系统的状态。 在主动操作系统发生故障时,控制器将大部分计算机资源分配给处于正常状态的另一个操作系统,并将操作系统分配为新的主动操作系统。 不管故障如何,可以在不改变其处理能力的情况下操作计算机系统。 控制器可以监控每个操作系统的负载,以根据负载将计算机资源分配给操作系统。

    Solid-state imaging device
    3.
    发明授权
    Solid-state imaging device 有权
    固态成像装置

    公开(公告)号:US08916917B2

    公开(公告)日:2014-12-23

    申请号:US13365627

    申请日:2012-02-03

    IPC分类号: H01L31/101 H01L27/146

    摘要: According to one embodiment, a solid-state imaging device includes a first element formation region surrounded by an element isolation region in a semiconductor substrate having a first and a second surface, an upper element isolation layer on the first surface in the element formation region, a lower element isolation layer between the second surface and the upper element isolation layer, a first photodiode in the element formation region, a floating diffusion in the element formation region, and a first transistor disposed between the first photodiode and the floating diffusion. A side surface of the lower element isolation layer protrudes closer to the transistor than a side surface of the upper element isolation layer.

    摘要翻译: 根据一个实施例,固态成像装置包括由具有第一和第二表面的半导体衬底中的元件隔离区围绕的第一元件形成区域,元件形成区域中的第一表面上的上部元件隔离层, 在第二表面和上部元件隔离层之间的下部元件隔离层,元件形成区域中的第一光电二极管,元件形成区域中的浮动扩散以及设置在第一光电二极管和浮动扩散部之间的第一晶体管。 下部元件隔离层的侧表面比上部元件隔离层的侧表面更靠近晶体管。

    Solid-state imaging device and method of controlling the same
    4.
    发明授权
    Solid-state imaging device and method of controlling the same 有权
    固态成像装置及其控制方法

    公开(公告)号:US08841707B2

    公开(公告)日:2014-09-23

    申请号:US12884806

    申请日:2010-09-17

    IPC分类号: H01L27/148

    摘要: According to one embodiment, a solid-state imaging device includes a semiconductor region, a first diffusion layer, a second diffusion layer, a third diffusion layer, an insulating film, a potential layer, and a read electrode. The semiconductor region includes first and second surfaces. The first diffusion layer is formed in the first surface. The first diffusion layer's concentration is a maximum value in a position at a first depth. The charge accumulation layer has a second depth. The second diffusion layer contacts the first diffusion layer. The third diffusion layer is formed in a position which faces the second diffusion layer in respect to the first diffusion layer. The insulating film is formed on the first surface. The potential layer is formed on the insulating film and has a predetermined potential. The read electrode is formed on the insulating film.

    摘要翻译: 根据一个实施例,固态成像装置包括半导体区域,第一扩散层,第二扩散层,第三扩散层,绝缘膜,电位层和读取电极。 半导体区域包括第一和第二表面。 第一扩散层形成在第一表面中。 第一扩散层的浓度是在第一深度处的位置的最大值。 电荷累积层具有第二深度。 第二扩散层接触第一扩散层。 第三扩散层形成在相对于第一扩散层面对第二扩散层的位置。 绝缘膜形成在第一表面上。 电位层形成在绝缘膜上并具有预定电位。 读取电极形成在绝缘膜上。

    Solid-state imaging device and manufacturing method thereof
    5.
    发明授权
    Solid-state imaging device and manufacturing method thereof 有权
    固态成像装置及其制造方法

    公开(公告)号:US08823847B2

    公开(公告)日:2014-09-02

    申请号:US13705285

    申请日:2012-12-05

    IPC分类号: H04N3/14 H04N5/335

    摘要: According to one embodiment, a solid-state imaging device includes a pixel region which is configured such that a photoelectric conversion unit and a signal scanning circuit unit are included in a semiconductor substrate, and a matrix of unit pixels is disposed, and a driving circuit region which is configured such that a device driving circuit for driving the signal scanning circuit unit is disposed on the semiconductor substrate, wherein the photoelectric conversion unit is provided on a back surface side of the semiconductor substrate, which is opposite to a front surface of the semiconductor substrate where the signal scanning circuit unit is formed, and the unit pixel includes an insulation film which is provided in a manner to surround a boundary part with the unit pixel that neighbors and defines a device isolation region.

    摘要翻译: 根据一个实施例,固态成像装置包括被配置为使得光电转换单元和信号扫描电路单元包括在半导体衬底中并且设置单位像素的矩阵的像素区域,以及驱动电路 区域,其被配置为使得用于驱动信号扫描电路单元的器件驱动电路设置在半导体衬底上,其中光电转换单元设置在半导体衬底的与前表面相对的背面侧上 半导体衬底,其中形成信号扫描电路单元,并且单位像素包括绝缘膜,该绝缘膜以与邻近的单位像素围绕边界部分并且限定器件隔离区域的方式设置。

    Solid-state imaging device
    6.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号:US08542304B2

    公开(公告)日:2013-09-24

    申请号:US13052145

    申请日:2011-03-21

    摘要: According to one embodiment, a solid-state imaging device includes first and second pixel portions, first and second transfer transistors, first and second accumulation portions, an element isolation region, first and second amplifier transistors, and a first and second signal lines. The first and second pixel portions include photoelectric conversion elements, respectively. The first and second transfer transistors transfer first and second charges photoelectrically converted by the first and second pixel portions, respectively. The first and second accumulation portions are interposed between the first and second pixel portions, and accumulate the first and second charges, respectively. The element isolation region is interposed between the first and second accumulation portions. The first and second amplifier transistors amplify voltages generated in accordance with the first and second charges accumulated in the first and second accumulation portions, respectively. The first and second signal lines output signal voltages amplify by the amplifier transistors, respectively.

    摘要翻译: 根据一个实施例,固态成像装置包括第一和第二像素部分,第一和第二转移晶体管,第一和第二累积部分,元件隔离区域,第一和第二放大器晶体管以及第一和第二信号线。 第一和第二像素部分分别包括光电转换元件。 第一和第二转移晶体管分别转移由第一和第二像素部分光电转换的第一和第二电荷。 第一和第二累积部分被插入在第一和第二像素部分之间,分别积累第一和第二电荷。 元件隔离区域介于第一和第二累积部分之间。 第一和第二放大器晶体管分别放大根据积累在第一和第二累积部分中的第一和第二电荷产生的电压。 第一和第二信号线输出信号电压分别由放大器晶体管放大。

    Photoelectric conversion film-stacked type solid-state imaging device and method of manufacturing the same
    7.
    发明授权
    Photoelectric conversion film-stacked type solid-state imaging device and method of manufacturing the same 失效
    光电转换膜堆叠型固态成像装置及其制造方法

    公开(公告)号:US08476573B2

    公开(公告)日:2013-07-02

    申请号:US12861238

    申请日:2010-08-23

    IPC分类号: H01L31/00

    摘要: According to one embodiment, a solid-state imaging device with a plurality of light-receiving layers for acquiring different color signals stacked one on top of another in the optical direction. Each of the light-receiving layers includes a photoelectric conversion part that receives light entering the back side of the layer and generates signal charges and a read transistor that is provided on the front side of the layer and reads the signal charges generated at the photoelectric conversion part. A semiconductor layer is stacked via an insulating film on the front side of the top layer of the plurality of light-receiving layers. At the semiconductor layer, there is provided a signal scanning circuit which processes a signal read by each of the read transistors and outputs a different color signal from each of the light-receiving layers to the outside.

    摘要翻译: 根据一个实施例,一种具有多个光接收层的固态成像装置,用于获取在光学方向上层叠在另一个上的不同颜色信号。 每个光接收层包括光电转换部分,其接收进入该层的背面的光并产生信号电荷,并且读取晶体管设置在该层的前侧,并读取在光电转换处产生的信号电荷 部分。 半导体层经由多个光接收层的顶层的前侧上的绝缘膜层叠。 在半导体层,提供一个信号扫描电路,处理由每个读出的晶体管读取的信号,并将不同的颜色信号从每个光接收层输出到外部。

    SOLID-STATE IMAGING DEVICE
    8.
    发明申请
    SOLID-STATE IMAGING DEVICE 失效
    固态成像装置

    公开(公告)号:US20110234875A1

    公开(公告)日:2011-09-29

    申请号:US13052145

    申请日:2011-03-21

    IPC分类号: H04N5/335

    摘要: According to one embodiment, a solid-state imaging device includes first and second pixel portions, first and second transfer transistors, first and second accumulation portions, an element isolation region, first and second amplifier transistors, and a first and second signal lines. The first and second pixel portions include photoelectric conversion elements, respectively. The first and second transfer transistors transfer first and second charges photoelectrically converted by the first and second pixel portions, respectively. The first and second accumulation portions are interposed between the first and second pixel portions, and accumulate the first and second charges, respectively. The element isolation region is interposed between the first and second accumulation portions. The first and second amplifier transistors amplify voltages generated in accordance with the first and second charges accumulated in the first and second accumulation portions, respectively. The first and second signal lines output signal voltages amplify by the amplifier transistors, respectively.

    摘要翻译: 根据一个实施例,固态成像装置包括第一和第二像素部分,第一和第二转移晶体管,第一和第二累积部分,元件隔离区域,第一和第二放大器晶体管以及第一和第二信号线。 第一和第二像素部分分别包括光电转换元件。 第一和第二转移晶体管分别转移由第一和第二像素部分光电转换的第一和第二电荷。 第一和第二累积部分被插入在第一和第二像素部分之间,分别积累第一和第二电荷。 元件隔离区域介于第一和第二累积部分之间。 第一和第二放大器晶体管分别放大根据积累在第一和第二累积部分中的第一和第二电荷产生的电压。 第一和第二信号线输出信号电压分别由放大器晶体管放大。

    External-electrode discharge lamp, external-electrode discharge lamp manufacturing method, and backlight unit
    9.
    发明申请
    External-electrode discharge lamp, external-electrode discharge lamp manufacturing method, and backlight unit 审中-公开
    外部电极放电灯,外部电极放电灯制造方法和背光单元

    公开(公告)号:US20090200943A1

    公开(公告)日:2009-08-13

    申请号:US10585595

    申请日:2005-01-20

    IPC分类号: H01J65/00 H01J9/38

    摘要: The present invention aims to provide an external-electrode discharge lamp able to suppress luminance variation, a manufacturing method for the lamp, and a backlight unit. A lamp (10) of the present invention includes a glass tube (11) sealed at both ends, and electrodes (18) and (19) provided around outer circumferential peripheries of the ends in the axial direction of the glass tube (11). During operation of the lamp (10), the electrodes (18) and (19) and the glass tube (11) between the electrodes (18) and (19) and a discharge space (14) equivalently function as first and second capacitors, whose capacitances are substantially the same.

    摘要翻译: 本发明旨在提供一种能够抑制亮度变化的外部电极放电灯,灯的制造方法和背光单元。 本发明的灯具(10)包括在两端密封的玻璃管(11),以及设置在玻璃管(11)的轴向两端的外周周围的电极(18)和(19)。 在灯(10)的操作期间,电极(18)和(19)之间的电极(18)和玻璃管(11)和放电空间(14)等效地用作第一和第二电容器, 其电容基本相同。