公开(公告)号：US20100285670A1

公开(公告)日：2010-11-11

申请号：US12840847

申请日：2010-07-21

申请人： Hiroyuki KOBAYASHI ,  Masaru IZAWA

发明人： Hiroyuki KOBAYASHI ,  Masaru IZAWA

IPC分类号： H01L21/465

CPC分类号： H01J37/32642 ,  H01J37/32623 ,  H01J2237/335 ,  H01L21/67207 ,  H01L21/68735 ,  H01L21/68785 ,  Y10S156/915

摘要： A diameter of a mounting unit of the stage of an asking processing apparatus is less than a diameter of a mounting unit of the stage of an etching processing apparatus, and the diameter of the mounting unit of the stage of the etching processing apparatus is less than a diameter of an objective item.

摘要翻译： 询问处理装置的台的安装单元的直径小于蚀刻处理装置的台的安装单元的直径，并且蚀刻处理装置的台的安装单元的直径小于 客观物品的直径。

公开(公告)号：US20100110809A1

公开(公告)日：2010-05-06

申请号：US12683029

申请日：2010-01-06

申请人： Hiroyuki KOBAYASHI ,  Daisuke Kitayama

发明人： Hiroyuki KOBAYASHI ,  Daisuke Kitayama

IPC分类号： G11C29/00 ,  G11C8/10

CPC分类号： G11C29/848 ,  G11C29/24

摘要： A semiconductor memory device includes a memory cell array, a redundant element, an address specifying circuit configured to select one of a plurality of addresses as a redundancy address in response to a switchover signal, a decoder circuit configured to select the redundant element in response to an externally applied address that matches the redundancy address selected by the address specifying circuit, and a test mode setting circuit configured to change the switchover signal in response to an externally applied input, thereby to cause the redundancy address assigned to the redundant element to be switched between different ones of the plurality of addresses.

摘要翻译： 半导体存储器件包括存储单元阵列，冗余元件，地址指定电路，被配置为响应于切换信号选择多个地址之一作为冗余地址;解码器电路，被配置为响应于所述冗余元件选择所述冗余元件 匹配由地址指定电路选择的冗余地址的外部施加的地址和被配置为响应于外部施加的输入而改变切换信号的测试模式设置电路，从而使分配给冗余元件的冗余地址被切换 在多个地址中的不同地址之间。

公开(公告)号：US20090212876A1

公开(公告)日：2009-08-27

申请号：US12390826

申请日：2009-02-23

申请人： Hiroyuki KOBAYASHI

发明人： Hiroyuki KOBAYASHI

IPC分类号： H03L7/085

CPC分类号： H03L7/085 ,  H03L7/0991 ,  H03L2207/06 ,  H03L2207/50

摘要： An oscillation controlling apparatus has a digitally-controlled oscillator configured to output an oscillating signal with an oscillation frequency according to an oscillator adjustment signal, and include a variable current source which supplies operation current based on an operation current control signal, a phase difference calculating unit configured to calculate a phase difference between the oscillating signal and a reference signal to output a phase difference signal, a filter configured to smooth a difference between a phase instruction signal setting the oscillation frequency of the digitally-controlled oscillator and the phase difference signal to output the oscillator adjustment signal, and a controlling unit configured to obtain the oscillator adjustment signal, output the operation current control signal so as to vary a value of the operation current, extract the value of the operation current at which the oscillator adjustment signal becomes the maximum value, and output the operation current control signal so that the operation current supplied by the variable current source becomes the extracted value.

摘要翻译： 振荡控制装置具有数字控制振荡器，其被配置为根据振荡器调整信号输出具有振荡频率的振荡信号，并且包括基于操作电流控制信号提供工作电流的可变电流源，相位差计算单元 被配置为计算所述振荡信号和参考信号之间的相位差以输出相位差信号;滤波器，被配置为平滑设置所述数字控制振荡器的振荡频率的相位指令信号与所述相位差信号之间的差以输出 所述振荡器调整信号以及被配置为获得所述振荡器调整信号的控制单元，输出所述操作电流控制信号以改变所述工作电流的值，提取所述振荡器调整信号变为最大值的工作电流的值 价值和产出 操作电流控制信号，使得由可变电流源提供的操作电流变为提取值。

公开(公告)号：US20090004871A1

公开(公告)日：2009-01-01

申请号：US12199028

申请日：2008-08-27

申请人： Kenji MAEDA ,  Tomoyuki TAMURA ,  Hiroyuki KOBAYASHI ,  Kenetsu YOKOGAWA ,  Tadamitsu KANEKIYO

发明人： Kenji MAEDA ,  Tomoyuki TAMURA ,  Hiroyuki KOBAYASHI ,  Kenetsu YOKOGAWA ,  Tadamitsu KANEKIYO

IPC分类号： H01L21/3065

CPC分类号： H01L21/67069 ,  H01J37/32082 ,  H01J37/32623 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/32136

摘要： A plasma processing method using plasma includes steps of applying current to a coil and introducing gas into a processing chamber, applying a bias power that does not generate plasma, applying a source power to generate plasma so that a plasma density distribution is high above an outer circumference of a semiconductor wafer and low above a center of the semiconductor wafer, and forming a shape of a sheath layer having a positive ion space charge directly above the semiconductor wafer so as to be convex in an upper direction from the semiconductor wafer, thereby eliminating foreign particles trapped in a boundary of the sheath layer having a positive ion space charge directly above the semiconductor wafer, generating plasma for processing the semiconductor wafer under a condition different from the conditions of the previous steps.

摘要翻译： 使用等离子体的等离子体处理方法包括以下步骤：向线圈施加电流并将气体引入处理室，施加不产生等离子体的偏置功率，施加源功率以产生等离子体，使得等离子体密度分布高于外部 半导体晶片的周围，并且低于半导体晶片的中心，并且在半导体晶片的正上方形成具有正离子空间电荷的鞘层的形状，以从半导体晶片向上方凸出，从而消除 杂质颗粒捕获在具有正离子空间电荷的鞘层的边界上，直接位于半导体晶片上方，产生用于在与前述步骤的条件不同的条件下处理半导体晶片的等离子体。