摘要:
A plasma processing method using plasma includes steps of applying current to a coil and introducing gas into a processing chamber, applying a bias power that does not generate plasma, applying a source power to generate plasma so that a plasma density distribution is high above an outer circumference of a semiconductor wafer and low above a center of the semiconductor wafer, and forming a shape of a sheath layer having a positive ion space charge directly above the semiconductor wafer so as to be convex in an upper direction from the semiconductor wafer, thereby eliminating foreign particles trapped in a boundary of the sheath layer having a positive ion space charge directly above the semiconductor wafer, generating plasma for processing the semiconductor wafer under a condition different from the conditions of the previous steps.
摘要:
The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.
摘要:
In a semiconductor manufacturing apparatus including a processing chamber, means for supplying gas to the processing chamber, evacuating means for decompressing the processing chamber, a transport chamber, means for supplying gas to the transport chamber, and evacuating means for decompressing the transport chamber, the pressure in the processing chamber is 10 to 50 Pa, the pressure in the transport chamber is set to positive pressure to the processing chamber, the differential pressure between the processing chamber and the transport chamber is 10 Pa or less, and the flow rate of the gas supplied to the processing chamber is twice or more the flow rate of gas supplied to the transport chamber.
摘要:
The present invention provides a plasma processing apparatus including: a processing chamber; a gas exhaust unit for reducing the pressure of the inside of the processing chamber through a gas exhaust line; and a laser light source for allowing laser light to transmit through an exhaust gas flowing in the gas exhaust line; an I-CCD camera for detecting scattered light caused by foreign particles passing in the laser light; and a foreign particle determination and detection unit for detecting the foreign particles from an image measured by the I-CCD camera, wherein the foreign particle determination and detection unit determines that the foreign particles are detected from the measured image when plural pixels with signals having a predetermined intensity or larger are connected in a substantially straight line.
摘要:
There is provided a vacuum processing apparatus including a valve whose opening degree can be set to any size and a control computer which automatically controls a depressurizing rate. The vacuum processing apparatus can reduce the number of foreign particles adhered to a sample to be processed in the lock chamber and can improve the throughput at the same time.
摘要:
A screen reception apparatus according to an exemplary aspect of the invention includes, a block image information storage unit that stores therein a plurality of block images resulting from segmentation of an entire image which is scrolled by software so that a display area, which is part of the entire image, is displayed on a first screen, as well as identifications of the respective block images, such that the block images and the identifications are correlated with each other; and an on-screen display unit that receives one of the identifications and display location within the first screen reads out from the block image information storage unit one of the block images corresponding to the received identification and, display the read out block image at the display location within the first screen.
摘要:
An image selection device includes: an image acquiring unit which acquires a plurality of shot images acquired by continuously shooting a subject; an area segmentation unit which segments an image area of the shot image into a motion area indicating different positions by a specified amount or more between two shot images and a non-motion area other than the motion area based on the two consecutive shot images in time series in the plurality of shot images; and a selection unit which selects at least one shot image from the plurality of shot images based on an amount of blur of an image in the non-motion area.
摘要:
A semiconductor integrated circuit includes: digitally controlled oscillators; a phase-data output unit; an integration processing unit; a filter unit; a multiplier (a first multiplier) that outputs, as an oscillator tuning word, a value obtained by multiplying an output signal subjected to time division from the filter unit with a predetermined coefficient; and an output selector (a tuning-word separating unit) that allocates the oscillator tuning word to the digitally controlled oscillators in synchronization with a reference frequency.
摘要:
A diameter of a mounting unit of the stage of an asking processing apparatus is less than a diameter of a mounting unit of the stage of an etching processing apparatus, and the diameter of the mounting unit of the stage of the etching processing apparatus is less than a diameter of an objective item.
摘要:
A perovskite oxide material containing: BiFeO3 as a first component; a second component containing at least one perovskite oxide which is constituted by A-site atoms having an average ionic valence of two and has a tendency to form a tetragonal structure; and a third component containing at least one perovskite oxide which has a tendency to form one of monoclinic, triclinic, and orthorhombic structures; where each perovskite oxide in the first component, the second component, and the third component contains A-site atoms, B-site atoms, and oxygen atoms substantially in a molar ratio of 1:1:3, and the molar ratio can deviate from 1:1:3 within a range