公开(公告)号：US20090004871A1

公开(公告)日：2009-01-01

申请号：US12199028

申请日：2008-08-27

申请人： Kenji MAEDA ,  Tomoyuki TAMURA ,  Hiroyuki KOBAYASHI ,  Kenetsu YOKOGAWA ,  Tadamitsu KANEKIYO

发明人： Kenji MAEDA ,  Tomoyuki TAMURA ,  Hiroyuki KOBAYASHI ,  Kenetsu YOKOGAWA ,  Tadamitsu KANEKIYO

IPC分类号： H01L21/3065

CPC分类号： H01L21/67069 ,  H01J37/32082 ,  H01J37/32623 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/32136

摘要： A plasma processing method using plasma includes steps of applying current to a coil and introducing gas into a processing chamber, applying a bias power that does not generate plasma, applying a source power to generate plasma so that a plasma density distribution is high above an outer circumference of a semiconductor wafer and low above a center of the semiconductor wafer, and forming a shape of a sheath layer having a positive ion space charge directly above the semiconductor wafer so as to be convex in an upper direction from the semiconductor wafer, thereby eliminating foreign particles trapped in a boundary of the sheath layer having a positive ion space charge directly above the semiconductor wafer, generating plasma for processing the semiconductor wafer under a condition different from the conditions of the previous steps.

摘要翻译： 使用等离子体的等离子体处理方法包括以下步骤：向线圈施加电流并将气体引入处理室，施加不产生等离子体的偏置功率，施加源功率以产生等离子体，使得等离子体密度分布高于外部 半导体晶片的周围，并且低于半导体晶片的中心，并且在半导体晶片的正上方形成具有正离子空间电荷的鞘层的形状，以从半导体晶片向上方凸出，从而消除 杂质颗粒捕获在具有正离子空间电荷的鞘层的边界上，直接位于半导体晶片上方，产生用于在与前述步骤的条件不同的条件下处理半导体晶片的等离子体。

公开(公告)号：US20130199728A1

公开(公告)日：2013-08-08

申请号：US13829676

申请日：2013-03-14

申请人： Hiroyuki KOBAYASHI ,  Kenji MAEDA ,  Kenetsu YOKOGAWA ,  Masaru IZAWA ,  Tadamitsu KANEKIYO

发明人： Hiroyuki KOBAYASHI ,  Kenji MAEDA ,  Kenetsu YOKOGAWA ,  Masaru IZAWA ,  Tadamitsu KANEKIYO

IPC分类号： H01L21/3065

CPC分类号： H01J37/32449 ,  C23C16/455 ,  C23C16/50 ,  C23C16/503 ,  C23C16/505 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/3244 ,  H01L21/3065 ,  Y10T137/0402

摘要： The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.

公开(公告)号：US20100319854A1

公开(公告)日：2010-12-23

申请号：US12546783

申请日：2009-08-25

申请人： Kenetsu YOKOGAWA ,  Kenji Maeda ,  Tomoyuki Tamura

发明人： Kenetsu YOKOGAWA ,  Kenji Maeda ,  Tomoyuki Tamura

IPC分类号： H01L21/3065

CPC分类号： H01J37/3244 ,  H01J37/32091 ,  H01J37/32532 ,  H01J37/3266

摘要： In a plasma processing apparatus conducting surface processing on a sample to be processed with plasma, an upper electrode includes a shower plate having first gas holes bored through it, a conductor plate disposed at back of the shower plate and having second gas holes bored through it, an insulation plate disposed in a center part of the conductor plate and having third gas holes bored through it, and an antenna basic member unit disposed at back of the conductor plate and having a temperature control function unit and a gass distribution unit. First and second minute gaps are formed in a radial direction at an interface between the shower plate and the insulation plate, and at an interface between the insulation plate and the conductor plate, respectively. Centers of the first gas holes are shifted from centers of the third gas holes in a circumference or radial direction.

摘要翻译： 在对等离子体处理的样品进行表面处理的等离子体处理装置中，上部电极包括具有穿过其的第一气孔的喷淋板，布置在喷淋板背面的导体板，并且具有穿过其的第二气孔 设置在导体板的中心部分并具有穿过其的第三气孔的绝缘板，以及设置在导体板背面并具有温度控制功能单元和气体分配单元的天线基座部件单元。 在喷淋板和绝缘板之间的界面处以及在绝缘板和导体板之间的界面处，分别在径向上形成第一和第二微小间隙。 第一气孔的中心在第三气孔的中心沿周向或径向偏移。

公开(公告)号：US20130200042A1

公开(公告)日：2013-08-08

申请号：US13840663

申请日：2013-03-15

申请人： Makoto SATAKE ,  Kenji MAEDA ,  Kenetsu YOKOGAWA ,  Tsutomu TETSUKA ,  Tatehito USUI ,  Ryoji NISHIO

发明人： Makoto SATAKE ,  Kenji MAEDA ,  Kenetsu YOKOGAWA ,  Tsutomu TETSUKA ,  Tatehito USUI ,  Ryoji NISHIO

IPC分类号： G11B5/84

CPC分类号： G11B5/84 ,  C23F4/00 ,  H01F10/14 ,  H01F10/16 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32449 ,  H01L43/12

摘要： In processing a magnetic film composed for example of Fe, Co or Ni formed on a substrate and a nonvolatile metal containing the same in a vacuum reactor using a plasma generating gas for generating plasma and a gas containing C and O, a power applied to an antenna for generating plasma is time-modulated, wherein the feeding of gas containing C and O to the vacuum reactor is synchronized with the time-modulated antenna power so that the supply of gas containing C and O to the vacuum reactor is suppressed when the antenna power is high and the gas containing C and O is fed to the vacuum reactor when the antenna power is low.

摘要翻译： 在使用等离子体产生气体产生等离子体的真空反应器和含有C和O的气体中处理由例如形成在基板上的Fe，Co或Ni构成的磁膜和含有该磁膜的非挥发性金属， 用于产生等离子体的天线是时间调制的，其中将包含C和O的气体馈送到真空电抗器与时间调制的天线功率同步，使得当天线向真空电抗器供应包含C和O的气体被抑制时 功率高，当天线功率低时，含有C和O的气体进入真空电抗器。

公开(公告)号：US20100203736A1

公开(公告)日：2010-08-12

申请号：US12414742

申请日：2009-03-31

申请人： Takamasa ICHINO ,  Kenji MAEDA ,  Kenetsu YOKOGAWA

发明人： Takamasa ICHINO ,  Kenji MAEDA ,  Kenetsu YOKOGAWA

IPC分类号： H01L21/3065

CPC分类号： H01J37/32642 ,  H01J37/32091 ,  H01J37/32183

摘要： There is provided a plasma processing method which controls a bias power to be constant without affecting the bias power supplied to a wafer, even if a part of a bias power supplied to a wafer is divided and supplied to a focus ring, and does not change the etching characteristic of the entire substrate to be processed. A high-frequency bias power supplied to a focus ring is changed by controlling the impedance control circuit according to the waste quantity of the focus ring that is wasted by the plasma processing. On the other hand, the high-frequency bias power supplied to the specimen support is controlled to the given high-frequency bias power by controlling the output of the high-frequency bias power supply.

摘要翻译： 提供了一种等离子体处理方法，其将偏置功率控制为恒定，而不影响提供给晶片的偏置功率，即使提供给晶片的偏置功率的一部分被分配并提供给聚焦环，并且不改变 要处理的整个基板的蚀刻特性。 通过根据等离子体处理浪费的聚焦环的浪费量控制阻抗控制电路来改变提供给聚焦环的高频偏置功率。 另一方面，通过控制高频偏置电源的输出，提供给检体支架的高频偏置功率被控制为给定的高频偏置功率。

公开(公告)号：US20100193130A1

公开(公告)日：2010-08-05

申请号：US12393272

申请日：2009-02-26

申请人： Masatoshi KAWAKAMI ,  Tooru ARAMAKI ,  Shigeru SHIRAYONE ,  Kenetsu YOKOGAWA ,  Takumi TANDOU

发明人： Masatoshi KAWAKAMI ,  Tooru ARAMAKI ,  Shigeru SHIRAYONE ,  Kenetsu YOKOGAWA ,  Takumi TANDOU

IPC分类号： H01L21/306

CPC分类号： H01L21/67109 ,  H01L21/6831

摘要： In a plasma processing apparatus including a vacuum chamber, a sample table for mounting a member to be processed thereon, the sample table having a coolant path to control a temperature of the member to be processed, an electrostatic chuck power supply for electrostatically adsorbing the member to be processed on the sample table, and a plurality of gas hole parts provided in the sample table to supply heat transfer gas between the member to be processed and the sample table and thereby control a temperature of the member to be processed, each of the gas hole parts includes a boss formed of a dielectric, a sleeve, and a plurality of small tubes, and the small tubes are arranged in a range of 10 to 50% of a radius when measured from a center of the gas hole part toward outside.

摘要翻译： 在包括真空室的等离子体处理装置中，用于安装待处理部件的样品台，具有用于控制待处理部件的温度的冷却剂通道的样品台，用于静电吸附该部件的静电卡盘电源 在样品台上加工的多个气孔部分和设置在样品台中的多个气孔部分，以在待处理部件和样品台之间提供传热气体，从而控制待处理部件的温度， 气孔部分包括由电介质，套管和多个小管形成的凸起，并且当从气孔部分的中心朝向外部测量时，小管被布置在半径的10至50％的范围内 。