摘要:
A semiconductor memory device having shared sense amplifiers is provided. The semiconductor memory device has a bit-line selector disposed closer to a memory cell array than a column decoder. When the column decoder outputs a bit-line indication signal corresponding to the number of bit lines, the bit-line selector selects a plurality of bit lines in response to the bit-line indication signal. Thus, it is possible to reduce the number of signals output from the column decoder.
摘要:
A delay locked loop (DLL) circuit for a synchronous semiconductor memory device which can control a delay time of a feedback loop within the DLL circuit according to the magnitude of an external load, and a method of generating information about a load connected to a data pin of a synchronous semiconductor memory device are provided. The DLL circuit includes a replica output driver delaying an internal clock signal by a first delay time to output a first internal clock signal, the first delay time is a delay time of the internal clock signal which is generated by an output driver when a first load of a first magnitude is connected to an output terminal of the output driver, and a transfer/delay circuit transferring the first delay internal clock signal to a phase detector as a second delay internal clock signal when the first load is connected to the output terminal, and outputting the second delay internal clock signal to the phase detector by delaying the first delay internal clock signal by a second delay time, the second delay time is a delay time of the internal clock signal which is generated by the output driver when a second load of a second magnitude, which is larger than the first magnitude, is connected to the output terminal.
摘要:
A delay locked loop (DLL) circuit for a synchronous semiconductor memory device which can control a delay time of a feedback loop within the DLL circuit according to the magnitude of an external load, and a method of generating information about a load connected to a data pin of a synchronous semiconductor memory device are provided. The DLL circuit includes a replica output driver delaying an internal clock signal by a first delay time to output a first internal clock signal, the first delay time is a delay time of the internal clock signal which is generated by an output driver when a first load of a first magnitude is connected to an output terminal of the output driver, and a transfer/delay circuit transferring the first delay internal clock signal to a phase detector as a second delay internal clock signal when the first load is connected to the output terminal, and outputting the second delay internal clock signal to the phase detector by delaying the first delay internal clock signal by a second delay time, the second delay time is a delay time of the internal clock signal which is generated by the output driver when a second load of a second magnitude, which is larger than the first magnitude, is connected to the output terminal.
摘要:
A multi-device system having a daisy chain system bus structure and related method of operation are disclosed. A reference signal having a defined oscillation period is communicated around the daisy chain bus structure. Total signal transmission time around the daisy chain bus structure as well as signal transmission time to each one of a plurality of client devices connected to a host device by the daisy chain bus structure may be readily determined.
摘要:
A refresh method for a semiconductor memory device having more than one bank group is provided. The refresh method may include applying an all-refresh command to one the bank groups, determining if one of the bank groups includes a bank undergoing a refresh operation when the all-refresh command is received, and performing an all-refresh operation based on the determination.
摘要:
A memory device is adapted to be connected in a daisy chain with a memory controller and one or more other memory devices. The memory device includes at least one data input port and at least one data output port for communicating data along the daisy-chain between the memory devices and the memory controller. The memory device is adapted to selectively enable/disable at least one of the data input or data output ports in response to whether a command received from the memory controller is intended for the memory device, or for one of the other memory devices.
摘要:
A memory system may include a memory device and a memory controller. The memory device may include a first bank and a second bank. The memory controller may include a read request scheduling queue that may store a read request, and may controls the read request scheduling queue so that if first and the second read requests to the first bank and a third read request to the second bank occur successively, data from the memory device may be output seamlessly by applying a first additive latency to first and second read requests to the first bank, and by applying a second additive latency to a third read request to the second bank.
摘要:
A spread spectrum clock generator includes a non-volatile memory to store control codes corresponding to a predetermined delay. A delay circuit receives a control code having a predetermined number of bits that determine a delay to apply to a fixed clock signal a period of time. The delay mitigates the electromagnetic interference caused by a periodic clock signal.