摘要:
A semiconductor memory device and a memory system including the same are provided. The semiconductor memory device may include a first memory cell array block generating first data, a second memory cell array block generating second data, and first and second error detection code generators. The first error detection code generator may generate a first error detection code and may combine a portion of bits of the first error detection code with a portion of bits of a second error detection code to generate a first final error detection signal. The second error detection code generator may generate the second error detection code and may combine the remaining bits other than the portion of bits of the second error detection code with the remaining bits other than the portion of bits of the first error detection code to generate a second final error detection signal.
摘要:
A spread spectrum clock generator includes a non-volatile memory to store control codes corresponding to a predetermined delay. A delay circuit receives a control code having a predetermined number of bits that determine a delay to apply to a fixed clock signal a period of time. The delay mitigates the electromagnetic interference caused by a periodic clock signal.
摘要:
A semiconductor memory device and a memory system including the same are provided. The semiconductor memory device may include a first memory cell array block generating first data, a second memory cell array block generating second data, and first and second error detection code generators. The first error detection code generator may generate a first error detection code and may combine a portion of bits of the first error detection code with a portion of bits of a second error detection code to generate a first final error detection signal. The second error detection code generator may generate the second error detection code and may combine the remaining bits other than the portion of bits of the second error detection code with the remaining bits other than the portion of bits of the first error detection code to generate a second final error detection signal.
摘要:
A semiconductor memory device having a duty cycle correction circuit and an interpolating circuit interpolating a clock signal in the semiconductor memory device are disclosed. The semiconductor memory device comprises a duty cycle correction circuit, which receives an external clock, corrects the duty cycle of the external clock, and outputs the corrected duty cycle. The duty cycle correction circuit comprises a first delay locked loop that receives the external clock, inverts the external clock, synchronizes the external clock with the inverted external clock, and outputs the synchronized clock; a second delay locked loop that receives the inverted external clock, synchronizes the inverted external clock with the external clock and outputs the synchronized clock; an inverting circuit that inverts the output signal of the first delay locked loop; an interpolation circuit that interpolates the output signal of the inverting circuit with the output signal of the second delay locked loop, and outputs the interpolated signal; and a control circuit that controls the interpolation circuit in response to the clock frequency information of the external clock.
摘要:
A semiconductor memory device and a memory system including the same are provided. The semiconductor memory device may include a first memory cell array block generating first data, a second memory cell array block generating second data, and first and second error detection code generators. The first error detection code generator may generate a first error detection code and may combine a portion of bits of the first error detection code with a portion of bits of a second error detection code to generate a first final error detection signal. The second error detection code generator may generate the second error detection code and may combine the remaining bits other than the portion of bits of the second error detection code with the remaining bits other than the portion of bits of the first error detection code to generate a second final error detection signal.
摘要:
A spread spectrum clock generator includes a non-volatile memory to store control codes corresponding to a predetermined delay. A delay circuit receives a control code having a predetermined number of bits that determine a delay to apply to a fixed clock signal a period of time. The delay mitigates the electromagnetic interference caused by a periodic clock signal.
摘要:
A semiconductor memory device and a memory system including the same are provided. The semiconductor memory device may include a first memory cell array block generating first data, a second memory cell array block generating second data, and first and second error detection code generators. The first error detection code generator may generate a first error detection code and may combine a portion of bits of the first error detection code with a portion of bits of a second error detection code to generate a first final error detection signal. The second error detection code generator may generate the second error detection code and may combine the remaining bits other than the portion of bits of the second error detection code with the remaining bits other than the portion of bits of the first error detection code to generate a second final error detection signal.
摘要:
A semiconductor capable of reducing skew between plural-bit output data by using a plurality of data output drivers and a method thereof. Each data output driver comprises a driver connected between an external power voltage and an external ground voltage, for pulling-up the output data in response to a first state of input data and for pulling-down the output data in response to a second state of the input data; a first delay circuit for varying transition delay time of the input data having the first state in response to signals received from other data output drivers; and a second delay circuit for varying transition delay time of the input data having the second state in response to signals received from other data output drivers.
摘要:
Integrated circuit die stacks having a first die mounted upon a substrate, the first die manufactured to be initially identical to a second die with a plurality of through silicon vias (‘TSVs’), the first die personalized by blowing fuses on the first die, converting the TSVs previously connected through the blown fuses into pass-through vias (‘PTVs’), each PTV implementing a conductive pathway through the first die with no connection to any circuitry on the first die; and the second die, manufactured to be initially identical to the first die and later personalized by blowing fuses on the second die, the second die mounted upon the first die so that the PTVs in the first die connect signal lines from the substrate through the first die to TSVs in the second die.
摘要:
Delay locked loop circuits are provided that include a delay locked loop that generates a delay locked loop output signal and a jitter suppressor. The jitter suppressor may comprise a delay circuit that receives the delay locked loop output signal and generates one or more delayed versions of the delay locked loop output signal and a phase interpolator that receives the delay locked loop output signal and the one or more delayed versions of the delay locked loop output signal. In certain embodiments of the present invention, the delay circuit may comprise a plurality of serially connected delay cells. Each of these delay cells may delay signals input thereto for at time equal to one clock period of an external clock signal that is input to the delay locked loop.