摘要:
A semiconductor memory device and a memory system including the same are provided. The semiconductor memory device may include a first memory cell array block generating first data, a second memory cell array block generating second data, and first and second error detection code generators. The first error detection code generator may generate a first error detection code and may combine a portion of bits of the first error detection code with a portion of bits of a second error detection code to generate a first final error detection signal. The second error detection code generator may generate the second error detection code and may combine the remaining bits other than the portion of bits of the second error detection code with the remaining bits other than the portion of bits of the first error detection code to generate a second final error detection signal.
摘要:
A semiconductor memory device having a duty cycle correction circuit and an interpolating circuit interpolating a clock signal in the semiconductor memory device are disclosed. The semiconductor memory device comprises a duty cycle correction circuit, which receives an external clock, corrects the duty cycle of the external clock, and outputs the corrected duty cycle. The duty cycle correction circuit comprises a first delay locked loop that receives the external clock, inverts the external clock, synchronizes the external clock with the inverted external clock, and outputs the synchronized clock; a second delay locked loop that receives the inverted external clock, synchronizes the inverted external clock with the external clock and outputs the synchronized clock; an inverting circuit that inverts the output signal of the first delay locked loop; an interpolation circuit that interpolates the output signal of the inverting circuit with the output signal of the second delay locked loop, and outputs the interpolated signal; and a control circuit that controls the interpolation circuit in response to the clock frequency information of the external clock.
摘要:
A semiconductor memory device and a memory system including the same are provided. The semiconductor memory device may include a first memory cell array block generating first data, a second memory cell array block generating second data, and first and second error detection code generators. The first error detection code generator may generate a first error detection code and may combine a portion of bits of the first error detection code with a portion of bits of a second error detection code to generate a first final error detection signal. The second error detection code generator may generate the second error detection code and may combine the remaining bits other than the portion of bits of the second error detection code with the remaining bits other than the portion of bits of the first error detection code to generate a second final error detection signal.
摘要:
A spread spectrum clock generator includes a non-volatile memory to store control codes corresponding to a predetermined delay. A delay circuit receives a control code having a predetermined number of bits that determine a delay to apply to a fixed clock signal a period of time. The delay mitigates the electromagnetic interference caused by a periodic clock signal.
摘要:
A semiconductor memory device and a memory system including the same are provided. The semiconductor memory device may include a first memory cell array block generating first data, a second memory cell array block generating second data, and first and second error detection code generators. The first error detection code generator may generate a first error detection code and may combine a portion of bits of the first error detection code with a portion of bits of a second error detection code to generate a first final error detection signal. The second error detection code generator may generate the second error detection code and may combine the remaining bits other than the portion of bits of the second error detection code with the remaining bits other than the portion of bits of the first error detection code to generate a second final error detection signal.
摘要:
A semiconductor capable of reducing skew between plural-bit output data by using a plurality of data output drivers and a method thereof. Each data output driver comprises a driver connected between an external power voltage and an external ground voltage, for pulling-up the output data in response to a first state of input data and for pulling-down the output data in response to a second state of the input data; a first delay circuit for varying transition delay time of the input data having the first state in response to signals received from other data output drivers; and a second delay circuit for varying transition delay time of the input data having the second state in response to signals received from other data output drivers.
摘要:
A semiconductor memory device and a memory system including the same are provided. The semiconductor memory device may include a first memory cell array block generating first data, a second memory cell array block generating second data, and first and second error detection code generators. The first error detection code generator may generate a first error detection code and may combine a portion of bits of the first error detection code with a portion of bits of a second error detection code to generate a first final error detection signal. The second error detection code generator may generate the second error detection code and may combine the remaining bits other than the portion of bits of the second error detection code with the remaining bits other than the portion of bits of the first error detection code to generate a second final error detection signal.
摘要:
A spread spectrum clock generator includes a non-volatile memory to store control codes corresponding to a predetermined delay. A delay circuit receives a control code having a predetermined number of bits that determine a delay to apply to a fixed clock signal a period of time. The delay mitigates the electromagnetic interference caused by a periodic clock signal.
摘要:
A three dimensional memory module and system are formed with at least one slave chip stacked over a master chip. Through semiconductor vias (TSVs) are formed through at least one of the master and slave chips. The master chip includes a memory core for increased capacity of the memory module/system. In addition, capacity organizations of the three dimensional memory module/system resulting in efficient wiring is disclosed for forming multiple memory banks, multiple bank groups, and/or multiple ranks of the three dimensional memory module/system.
摘要:
A latency control circuit includes a FIFO controller and a register unit. The FIFO controller may generate an increase signal according to an external command, and generate a decrease signal according to an internal command. The FIFO controller may also enable a depth point signal responsive to the increase signal and the decrease signal. The register unit may include n registers. The value n (rounded off) may be obtained by dividing a larger value of a maximum number of additive latencies and a maximum number of write latencies by a column cycle delay time (tCCD). The registers may store an address received with the external command responsive to the increase signal and a clock signal, and may shift either the address or a previous address to a neighboring register. The latency control circuit transmits an address stored in a register as a column address corresponding to the enabled depth point signal.