公开(公告)号：US09377478B2

公开(公告)日：2016-06-28

申请号：US13322773

申请日：2010-04-28

申请人： Takashi Noguchi ,  Yoshiyuki Tajima ,  Koji Kamoshida ,  Naomi Ishii

发明人： Takashi Noguchi ,  Yoshiyuki Tajima ,  Koji Kamoshida ,  Naomi Ishii

IPC分类号： G06F15/173 ,  G01N35/02 ,  G01N35/00

CPC分类号： G01N35/02 ,  G01N35/00 ,  G01N35/00732 ,  G01N35/0092 ,  G01N35/0095

摘要： There is provided a sample test system which can execute a prior process for a specific sample in consideration of priorities and process progresses of a plurality of samples processed in the sample test system. The sample test system includes a sample-test-device management server 101, when a specific-sample prior process request containing a specific sample ID and a prior-process-request level identification code is accepted from a sample access system 108, which selects a specific-sample prior-process-policy determination table based on the prior-process-request level identification code attached to the specific-sample prior process request, which determines a specific-sample prior process policy based on the specific-sample prior-process-policy determination table and a process state of the sample, which specifies a sample ID regarding the specific sample ID, and which transmits the specific-sample prior process policy to a sample-test-device group 119.

摘要翻译： 提供了一种样本测试系统，其可以考虑到在样本测试系统中处理的多个样本的优先级和处理进程，对特定样本执行先前的过程。 样本测试系统包括样本测试设备管理服务器101，当从样本访问系统108接收到包含特定样本ID和先前处理请求级别识别码的特定样本先验处理请求时，该样本测试设备管理服务器101选择 基于与特定样本先验过程请求相关联的先前过程请求级别标识代码的特定样本先前过程策略确定表，其基于特定样本先前处理过程策略确定特定样本先验过程策略， 策略确定表和样本的处理状态，其指定关于特定样本ID的样本ID，并将特定样本先验处理策略发送到样本测试装置组119。

公开(公告)号：US09194876B2

公开(公告)日：2015-11-24

申请号：US12729787

申请日：2010-03-23

申请人： Tatsuya Tokunga ,  Naomi Ishii ,  Takashi Noguchi ,  Masaki Takano ,  Yayoi Shitara

发明人： Tatsuya Tokunga ,  Naomi Ishii ,  Takashi Noguchi ,  Masaki Takano ,  Yayoi Shitara

IPC分类号： G01N1/28 ,  G01N1/02 ,  G01P15/16 ,  G01F3/00 ,  G01N35/00

CPC分类号： G01N35/0092 ,  G01N35/0095 ,  G01N35/02 ,  G01N2035/00881 ,  G01N2035/0091 ,  G01N2035/0094 ,  G01N2035/0406 ,  G06F19/00 ,  G16H10/00 ,  Y02A90/22 ,  Y02A90/26

摘要： A management server of a sample inspection system includes sample processing information generated on the basis of inspection request data, facility data, a simulation execution portion and a window generation portion for generating a monitor window. The inspection request data contains a priority, an order time, a required time and inspection items and the sample processing information contains an inspection start time and an inspection estimate finish time. The monitor window has a work area in which the samples represented by sample bars parallel to the abscissa are arranged in a vertical direction and a past record and a future schedule are allocated to this abscissa with the present time as the base. The sample bars display a simulation execution portion for executing simulation on the basis of the inspection start time, the inspection estimate finish time and a delay time. The management server displays the simulation result.

摘要翻译： 样本检查系统的管理服务器包括基于检查请求数据生成的样本处理信息，设施数据，模拟执行部分和用于生成监视器窗口的窗口生成部分。 检查请求数据包含优先权，订单时间，所需时间和检查项目，并且样本处理信息包含检查开始时间和检查估计完成时间。 监视器窗口具有工作区域，其中与横坐标平行的样本条表示的样本在垂直方向上排列，并且将过去记录和未来调度以当前时间作为基准分配给该横坐标。 样品条显示用于基于检查开始时间，检查估计完成时间和延迟时间来执行模拟的模拟执行部分。 管理服务器显示仿真结果。

公开(公告)号：US08723181B2

公开(公告)日：2014-05-13

申请号：US12662272

申请日：2010-04-08

申请人： Huaxiang Yin ,  Takashi Noguchi ,  Wenxu Xianyu ,  Kyung-bae Park

发明人： Huaxiang Yin ,  Takashi Noguchi ,  Wenxu Xianyu ,  Kyung-bae Park

IPC分类号： H01L29/10

CPC分类号： H01L21/02675 ,  H01L21/2026 ,  H01L21/84 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/12 ,  H01L27/1281

摘要： Stacked transistors and electronic devices including the stacked transistors. An electronic device includes a substrate, a first transistor on the substrate and including a first active layer, a first gate, and a first gate insulating layer between the first active layer and the first gate, a first metal line spaced apart from the first gate on the substrate, a first insulating layer covering the first transistor and the first metal line, and a second transistor on the first insulating layer between the first transistor and the first metal line, and including a second active layer, a second gate, and a second gate insulating layer between the second active layer and the second gate.

摘要翻译： 堆叠晶体管和包括堆叠晶体管的电子器件。 电子器件包括衬底，衬底上的第一晶体管，并且在第一有源层和第一栅极之间包括第一有源层，第一栅极和第一栅极绝缘层，与第一栅极间隔开的第一金属线 在所述基板上，覆盖所述第一晶体管和所述第一金属线的第一绝缘层，以及在所述第一晶体管和所述第一金属线之间的所述第一绝缘层上的第二晶体管，并且包括第二有源层，第二栅极和 第二栅极绝缘层，位于第二有源层和第二栅极之间。

公开(公告)号：US20120286668A1

公开(公告)日：2012-11-15

申请号：US13518894

申请日：2010-12-13

申请人： Kazuyoshi Kondo ,  Ryosuke Matsui ,  Terutaka Muramatsu ,  Takashi Noguchi ,  Ryo Suzuki

发明人： Kazuyoshi Kondo ,  Ryosuke Matsui ,  Terutaka Muramatsu ,  Takashi Noguchi ,  Ryo Suzuki

IPC分类号： H05B37/00

CPC分类号： H05B33/089 ,  F21K9/27 ,  F21Y2103/10 ,  F21Y2115/10 ,  Y02B20/341 ,  Y02B20/386

摘要： The object of the present invention is to provide a LED illumination system which does not cause heat generation and damage, even when a straight-tube fluorescent lamp is mistakenly fitted into a straight-tube fluorescent lamp luminaire in which the fluorescent lamp ballast has been replaced with a LED lighting device.The LED illumination system according to the present invention is configurated in such a manner that the LED lighting device is installed in an existing straight-tube fluorescent lamp luminaire, and the LED lamp is connected to the existing sockets. The characteristic of the output from the LED lighting device connected to either inter-terminal section A on the ends of the LED lamp is to be different from that of an existing fluorescent lamp lighting device. The LED lamp is provided with lighting device output detection means for detecting the output from the LED lighting device and also with protection means for cutting off the input to the LED lamp when the output detected by the lighting device output detection means is outside of a predetermined range.

摘要翻译： 本发明的目的是提供一种即使当直管式荧光灯被错误地装配到已经更换了荧光灯镇流器的直管式荧光灯灯具中时也不引起发热和损坏的LED照明系统 配有LED照明装置。 根据本发明的LED照明系统被配置为使得LED照明装置安装在现有的直管荧光灯灯具中，并且LED灯连接到现有的插座。 连接到LED灯两端的端子间部分A的LED照明装置的输出的特性与现有荧光灯照明装置的输出特性不同。 LED灯具有用于检测来自LED照明装置的输出的照明装置输出检测装置，并且还具有用于当由照明装置输出检测装置检测到的输出超出预定值时切断对LED灯的输入的保护装置 范围。

公开(公告)号：US20120075844A1

公开(公告)日：2012-03-29

申请号：US13375788

申请日：2010-06-03

申请人： Kazuya Imagi ,  Takashi Noguchi

发明人： Kazuya Imagi ,  Takashi Noguchi

IPC分类号： F21L4/00

CPC分类号： A47G23/0309 ,  F21V33/0036 ,  F21Y2115/10

摘要： An LED coaster may include: a light transmitting cover, on the upper surface of which an object is placed; a bottom cover attached to the lower surface of the light transmitting cover; a substrate provided between the light transmitting cover and the bottom cover, having an LED mounted on a component surface on the light transmitting cover side and having a switch that turns the LED on and off mounted on a solder surface on the bottom cover side; batteries contained in a battery storage part of the bottom cover to supply electric power to the LED; two rubber pads attached to the bottom surface of the bottom cover; and a switch pad that is attached to the inside of the bottom cover in a vertically moveable manner and on which a switch pressing part facing the switch is arranged. The two rubber pads and the switch pad may be arranged near the outer periphery of the bottom of the bottom cover at approximately equal intervals in a circumferential direction, and the diameter of the switch pad may be set to just under ½ of the diameter of the LED coaster.

摘要翻译： LED过山车可以包括：透光罩，其上表面放置有物体; 底盖附接到透光罩的下表面; 设置在所述透光罩和所述底盖之间的基板，具有安装在所述透光罩侧的部件表面上的LED，并且具有使安装在所述底盖侧的焊料表面上的LED接通和断开的开关; 包含在底盖的电池存储部分中的电池以向LED提供电力; 两个橡胶垫连接到底盖底面; 以及以垂直移动的方式安装在底盖的内部并且布置有面向开关的开关按压部的开关垫。 两个橡胶垫和开关垫可以沿圆周方向以大致相等的间隔设置在底盖的底部的外周附近，并且开关垫的直径可以设定在直径的1/2以下 LED过山车。

公开(公告)号：US07723168B2

公开(公告)日：2010-05-25

申请号：US11283874

申请日：2005-11-22

申请人： Huaxiang Yin ,  Takashi Noguchi ,  Wenxu Xianyu ,  Kyung-bae Park

发明人： Huaxiang Yin ,  Takashi Noguchi ,  Wenxu Xianyu ,  Kyung-bae Park

IPC分类号： H01L21/00

CPC分类号： H01L21/02675 ,  H01L21/2026 ,  H01L21/84 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/12 ,  H01L27/1281

摘要： A method of manufacturing a polycrystalline Si film and a method of manufacturing a stacked transistor are provided. The method of manufacturing the polycrystalline Si film includes preparing an insulating substrate on which is formed a transistor that includes a poly-Si active layer, a gate insulating layer, and a gate, sequentially formed, forming an interconnection metal line separated from the gate, forming an insulating layer that covers the transistor and the interconnection metal line, forming an amorphous silicon layer on the insulating layer; and annealing the amorphous silicon layer.

摘要翻译： 提供一种制造多晶Si膜的方法和制造堆叠晶体管的方法。 制造多晶Si膜的方法包括制备绝缘基板，其上形成有依次形成的多晶硅，具有多晶硅有源层，栅极绝缘层和栅极，形成与栅极分离的互连金属线， 形成覆盖晶体管和互连金属线的绝缘层，在绝缘层上形成非晶硅层; 并退火非晶硅层。

公开(公告)号：USD614554S1

公开(公告)日：2010-04-27

申请号：US29316232

申请日：2009-09-03

申请人： Takashi Noguchi ,  Matthew Weaver

设计人： Takashi Noguchi ,  Matthew Weaver

公开(公告)号：US07679140B2

公开(公告)日：2010-03-16

申请号：US12003040

申请日：2007-12-19

申请人： Young-soo Park ,  Wenxu Xianyu ,  Takashi Noguchi

发明人： Young-soo Park ,  Wenxu Xianyu ,  Takashi Noguchi

IPC分类号： H01L27/01

CPC分类号： H01L21/76259 ,  H01L21/32134 ,  H01L21/76256 ,  H01L27/1266 ,  H01L29/7842 ,  H01L29/78603 ,  H01L29/78687 ,  H01L2924/0002 ,  Y10S438/933 ,  H01L2924/00

摘要： Provided is a strained SOI structure and a method of manufacturing the strained SOI structure. The strained SOI structure includes an insulating substrate, a SiO2 layer formed on the insulating substrate, and a strained silicon layer formed on the SiO2 layer.

摘要翻译： 提供了一种应变SOI结构和制造应变SOI结构的方法。 应变SOI结构包括绝缘衬底，形成在绝缘衬底上的SiO 2层和形成在SiO 2层上的应变硅层。

公开(公告)号：US20100041214A1

公开(公告)日：2010-02-18

申请号：US12461315

申请日：2009-08-07

申请人： Hans S. Cho ,  Takashi Noguchi ,  Wenxu Xianyu ,  Xiaoxin Zhang ,  Huaxiang Yin

发明人： Hans S. Cho ,  Takashi Noguchi ,  Wenxu Xianyu ,  Xiaoxin Zhang ,  Huaxiang Yin

IPC分类号： H01L21/20

CPC分类号： H01L21/02636 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02532 ,  H01L21/02686

摘要： A high quality single crystal substrate and a method of fabricating the same are provided. The method of fabricating a single crystal substrate includes: forming an insulator on a substrate; forming a window in the insulator, the window exposing a portion of the substrate; forming an epitaxial growth silicon or germanium seed layer on the portion of the substrate exposed through the window; depositing a silicon or germanium material layer, which are crystallization target material layers, on the epitaxial growth silicon 6r germanium seed layer and the insulator; and crystallizing the crystallization target material layer by melting and cooling the crystallization target material layer.

摘要翻译： 提供了高质量的单晶基板及其制造方法。 制造单晶衬底的方法包括：在衬底上形成绝缘体; 在所述绝缘体中形成窗口，所述窗口暴露所述基板的一部分; 在通过窗户暴露的衬底的部分上形成外延生长硅或锗种子层; 在外延生长硅6r锗种子层和绝缘体上沉积作为结晶靶材料层的硅或锗材料层; 并且通过熔化和冷却结晶化目标材料层来使结晶目标材料层结晶。

公开(公告)号：US07470579B2

公开(公告)日：2008-12-30

申请号：US11557360

申请日：2006-11-07

申请人： Hyuk Lim ,  Takashi Noguchi ,  Jong-man Kim ,  Kyung-bae Park ,  Huaxiang Yin

发明人： Hyuk Lim ,  Takashi Noguchi ,  Jong-man Kim ,  Kyung-bae Park ,  Huaxiang Yin

IPC分类号： H01L21/336

CPC分类号： H01L29/78621 ,  H01L29/66757

摘要： A thin film transistor having an offset or a lightly doped drain (LDD) structure by self alignment and a method of fabricating the same comprises a substrate, a silicon layer disposed on the substrate and including a channel region, a source region and a drain region at both sides of the channel region, and offset regions, each offset regions disposed between the channel region and one of the source and drain regions at both sides of the channel region, a gate insulating layer covering the channel region and the offset regions disposed at both sides of the channel region excluding the source and drain regions, and a gate layer formed on the channel region excluding the offset regions. The thin film transistor has the structure in which an offset or LDD is obtained without an additional mask process.

摘要翻译： 具有通过自对准的偏移或轻掺杂漏极（LDD）结构的薄膜晶体管及其制造方法包括：衬底，设置在衬底上的硅层，并且包括沟道区，源极区和漏极区 在通道区域的两侧和偏移区域，每个偏移区域设置在沟道区域和沟道区域两侧的源极和漏极区域之一之间，覆盖沟道区域的栅极绝缘层和设置在沟道区域的偏移区域 除了源极和漏极区域之外的沟道区域的两侧，以及形成在除偏移区域之外的沟道区域上的栅极层。 薄膜晶体管具有在没有附加掩模处理的情况下获得偏移或LDD的结构。