-
公开(公告)号：US20140181576A1
公开(公告)日：2014-06-26
申请号：US13722499
申请日：2012-12-20
CPC分类号： G06F9/45533 , G06F9/45558 , G06F9/50 , G06F9/5016 , G06F12/06 , G06F2009/45583 , G06F2212/152
摘要： Apparatuses and methods associated with memory allocations for virtual machines are disclosed. In embodiments, an apparatus may include a processor; a plurality of memory modules; and a memory controller configured to provide a layout of the memory modules. The apparatus may further include a VMM configured to be operated by the processor to manage execution of a VM by the processor including selective allocation of the memory modules to the VM using the layout of the memory modules provided to the VMM by the memory controller. Other embodiments may be described and claimed.
摘要翻译： 公开了与虚拟机的存储器分配相关联的装置和方法。 在实施例中，装置可以包括处理器; 多个存储器模块; 以及存储器控制器，被配置为提供所述存储器模块的布局。 该设备可以进一步包括被配置为由处理器操作以管理由处理器执行VM的VMM，包括使用由存储器控制器提供给VMM的存储器模块的布局来将存储器模块选择性地分配给VM。 可以描述和要求保护其他实施例。
-
公开(公告)号：US20140087656A1
公开(公告)日：2014-03-27
申请号：US13628156
申请日：2012-09-27
CPC分类号： G06F21/84 , G06F21/31 , G06F21/6245
摘要： In one embodiment, the present invention includes a method for receiving in a persistent electronic display an authentication code from an end user, determining whether the received authentication code corresponds to a stored authentication code, and displaying a selected image on the persistent electronic display if the received authentication code corresponds to the stored authentication code, and otherwise displaying an obscured image on the persistent electronic display. This obscured image may be in an unreadable format in which information of the selected image is unreadable but a type of document represented by the selected image is determinable. Other embodiments are described and claimed.
摘要翻译： 在一个实施例中，本发明包括一种用于在永久电子显示器中接收来自最终用户的认证码的方法，确定所接收的认证码是否对应于所存储的认证码，以及如果所述持久性电子显示器显示所选择的图像 接收到的认证码对应于存储的认证码，否则在持久电子显示器上显示模糊图像。 这种模糊的图像可以是不可读的格式，其中所选择的图像的信息是不可读的，但是由所选择的图像表示的文档的类型是可确定的。 描述和要求保护其他实施例。
-
公开(公告)号：US5427622A
公开(公告)日：1995-06-27
申请号：US276684
申请日：1994-07-18
CPC分类号： H01L21/67057 , E04B2001/8419 , Y10S134/902
摘要： Apparatus and method for cleaning/etching the surface of an article with sonic energy in the megahertz range which employ an anti-reflection mechanism within a recirculation tank. A tank having at least one side wall and a bottom structure holds a cleaning/etching liquid and a megasonic transducer is associated with the tank for projecting megasonic energy into the liquid. The anti-reflection mechanism is disposed within the tank in close association with the at least one sidewall or bottom structure of the tank to thereby minimize reflection of megasonic energy from the associated surface. Preferably, the megasonic transducer is associated with a first tank sidewall which opposes a second tank sidewall, and the anti-reflection mechanism is disposed adjacent the second tank sidewall. By way of example, the anti-reflection mechanism can comprise a stream of gas bubbles, a plurality of anechoic structures, or a combination of both gas bubbles and anechoic structures.
摘要翻译： 用于在兆赫兹范围内用声能量清洁/蚀刻物品的表面的装置和方法，其在循环罐内采用防反射机构。 具有至少一个侧壁和底部结构的罐保持清洁/蚀刻液体，并且兆声波换能器与用于将兆声波能量投射到液体中的罐相关联。 防反射机构设置在罐内与罐的至少一个侧壁或底部结构紧密相关联，从而最小化来自相关联表面的兆声波能量的反射。 优选地，兆声波换能器与第二坦克侧壁相对，第一坦克侧壁与第二坦克侧壁相对，并且防反射机构邻近第二坦克侧壁设置。 作为示例，防反射机构可以包括气泡流，多个消声结构或两个气泡和消声结构的组合。
-
公开(公告)号：US5216282A
公开(公告)日：1993-06-01
申请号：US784193
申请日：1991-10-29
IPC分类号： H01L21/28 , H01L21/3105 , H01L21/336 , H01L21/60 , H01L21/768 , H01L23/48 , H01L23/522 , H01L29/78
CPC分类号： H01L23/5226 , H01L21/3105 , H01L21/76877 , H01L21/76879 , H01L21/76897 , H01L2924/0002
摘要： A contact stud for a semiconductor structure is fabricated by providing a semiconductor substrate having an alignment structure, which includes a sidewall, and the semiconductor structure formed thereon, forming a sidewall spacer contiguous with the semiconductor structure and the sidewall of the alignment structure, depositing an insulating layer contiguous with the sidewall spacer so as to insulate the semiconductor structure, etching the sidewall spacer selectively to the sidewall of the alignment structure, the semiconductor structure and the insulating layer for forming a contact window opening for allowing access to the semiconductor structure, and backfilling the contact window opening with a conductive material so as to contact the semiconductor structure for forming the stud.
-
公开(公告)号：US5187121A
公开(公告)日：1993-02-16
申请号：US810004
申请日：1991-12-18
IPC分类号： H01L21/28 , H01L21/3105 , H01L21/311 , H01L21/318 , H01L21/768
CPC分类号： H01L21/76802 , H01L21/31051 , H01L21/31116 , H01L21/318 , H01L21/76885
摘要： Self-aligning process for fabricating a semiconductor structure and stud therefor on a semiconductor substrate comprises depositing a first material onto the substrate, depositing a second material onto the first material, removing excess portions of second material so as to form openings through the second material exposing excess portions of first material, whereby a selected portion of second material is retained and forms a sacrificial element, removing the excess portions of first material selectively to the substrate so as to extend the openings through the first material to the substrate, whereby a selected portion of first material is retained and forms the semiconductor structure, filling the openings with an insulating material, removing the sacrificial element selectively to the insulating material and the semiconductor structure for forming a contact window opening for allowing access to the semiconductor structure, and filling the contact window opening with stud material so as to contact the semiconductor structure for forming the stud.
摘要翻译： 用于在半导体衬底上制造半导体结构和螺柱的自对准工艺包括将第一材料沉积到衬底上，将第二材料沉积到第一材料上，去除第二材料的多余部分，以便通过第二材料暴露 第一材料的多余部分，由此保留第二材料的选定部分并形成牺牲元件，将第一材料的多余部分选择性地去除到衬底上，以将开口延伸穿过第一材料到衬底，由此选择部分 的第一材料被保持并形成半导体结构，用绝缘材料填充开口，将牺牲元件选择性地去除绝缘材料和用于形成用于允许接近半导体结构的接触窗口的半导体结构，并且填充接触 窗口打开与螺柱材料 从而与形成螺柱的半导体结构接触。
-
公开(公告)号：US5138432A
公开(公告)日：1992-08-11
申请号：US667786
申请日：1991-03-11
IPC分类号： H01L21/285 , H01L21/768
CPC分类号： H01L21/76879 , H01L21/28562
摘要： An improved process for preparing selective deposition of conductive metals on disilicide encroachment barriers allows the construction of integrated circuit components wherein the metal/disilicide interface is substantially free of O and/or F contamination. The level of interfacial oxygen and/or fluorine contamination in the selective W deposition on the TiSi.sub.2 was substantially reduced or eliminated by first forming a C49 TiSi.sub.2 phase on a substrate, selectively depositiong W on the C49 TiSi.sub.2 phase and thereafter annealing a a (minimum) temperature sufficient to convert the high resistivity phase C49 TiSi.sub.2 to the low resistivity phase C54 TiSi.sub.2.
摘要翻译： 用于制备导电金属在二硅化物侵入屏障上的选择性沉积的改进方法允许构建集成电路部件，其中金属/二硅化物界面基本上不含O和/或F污染物。 通过首先在衬底上形成C49TiSi2相，选择性地沉积在C49 TiSi2相上的W，然后退火aa（最小）温度，在TiSi 2上的选择性W沉积中的界面氧和/或氟污染物的水平被显着降低或消除 足以将高电阻率相C49TiSi2转化为低电阻率相C54 TiSi2。
-
公开(公告)号：US4966870A
公开(公告)日：1990-10-30
申请号：US391399
申请日：1989-08-08
IPC分类号： H01L21/311
CPC分类号： H01L21/31116
摘要： A process for making borderless contacts through an insulating layer to active regions of a semiconductor device is disclosed. After deposition of a silicon nitride layer and an insulation glass layer on a substrate coating semiconductor devices, the contact windows are etched. The windows are etched through the glass layer with BCl.sub.2 or CHF.sub.3 /CF.sub.4 etch gases. Next, the windows are etched through the silicon nitride with CH.sub.3 F or O.sub.2 /CHF.sub.3 gases.
摘要翻译： 公开了一种通过绝缘层向半导体器件的有源区进行无边界接触的方法。 在将半导体器件涂覆在衬底上的氮化硅层和绝缘玻璃层上之后，对接触窗进行蚀刻。 窗口通过玻璃层通过BCl2或CHF3 / CF4蚀刻气体进行蚀刻。 接下来，通过具有CH 3 F或O 2 / CHF 3气体的氮化硅蚀刻窗口。
-
58.发明授权Method for providing increased dopant concentration in selected regions of semiconductor devices 失效在半导体器件的选定区域中提供增加的掺杂剂浓度的方法
公开(公告)号：US4814290A
公开(公告)日：1989-03-21
申请号：US114933
申请日：1987-10-30
IPC分类号： H01L21/76 , H01L21/225 , H01L21/762 , H01L29/78 , H01L21/302
CPC分类号： H01L21/2253 , H01L21/76202 , H01L21/76216
摘要： A method for providing increased dopant concentration in selected regions of semiconductors by providing field implant dopant in the transition region located below the "bird's beak" region and between the field and active regions of a semiconductor. The method comprises the steps of: forming a thin insulating layer on the surface of a semiconductor substrate; depositing a thin anti-oxidant layer on the insulating layer; depositing a layer of photoresist on the anti-oxidant layer; selectively etching the anti-oxidant layer; ion-implanting the field region of the semiconductor substrate; providing spacers on the sides of the anti-oxidant layer; and oxidizing the semiconductor substrate.
-
公开(公告)号：US4734157A
公开(公告)日：1988-03-29
申请号：US27458
申请日：1987-03-18
IPC分类号： H01L21/3213 , B44C1/22 , C23F1/12 , H01L21/308
CPC分类号： H01L21/32137
摘要： A composition and method for anistropically etching polysilicon or silicides with excellent selectivity to an underlying layer of an oxide or nitride of silicon is disclosed. A mixture of CClF.sub.3 or CCl.sub.2 F.sub.2 and ammonia is employed at moderate pressures in a reactive ion etching chamber.
摘要翻译： 公开了一种用于对硅的氧化物或氮化物的下层具有优异选择性去多孔或硅化物的组分和方法。 在反应离子蚀刻室中以中等压力使用CClF 3或CCl 2 F 2和氨的混合物。
-
-
-
-
-
-
-
-
搜索结果
59 条记录 (耗时 0.024 秒)
