Method for uniform cleaning of wafers using megasonic energy
    6.
    发明授权
    Method for uniform cleaning of wafers using megasonic energy 失效
    使用兆声波能量均匀清洁晶片的方法

    公开(公告)号:US5427622A

    公开(公告)日:1995-06-27

    申请号:US276684

    申请日:1994-07-18

    IPC分类号: E04B1/84 H01L21/00 B08B3/12

    摘要: Apparatus and method for cleaning/etching the surface of an article with sonic energy in the megahertz range which employ an anti-reflection mechanism within a recirculation tank. A tank having at least one side wall and a bottom structure holds a cleaning/etching liquid and a megasonic transducer is associated with the tank for projecting megasonic energy into the liquid. The anti-reflection mechanism is disposed within the tank in close association with the at least one sidewall or bottom structure of the tank to thereby minimize reflection of megasonic energy from the associated surface. Preferably, the megasonic transducer is associated with a first tank sidewall which opposes a second tank sidewall, and the anti-reflection mechanism is disposed adjacent the second tank sidewall. By way of example, the anti-reflection mechanism can comprise a stream of gas bubbles, a plurality of anechoic structures, or a combination of both gas bubbles and anechoic structures.

    摘要翻译: 用于在兆赫兹范围内用声能量清洁/蚀刻物品的表面的装置和方法,其在循环罐内采用防反射机构。 具有至少一个侧壁和底部结构的罐保持清洁/蚀刻液体,并且兆声波换能器与用于将兆声波能量投射到液体中的罐相关联。 防反射机构设置在罐内与罐的至少一个侧壁或底部结构紧密相关联,从而最小化来自相关联表面的兆声波能量的反射。 优选地,兆声波换能器与第二坦克侧壁相对,第一坦克侧壁与第二坦克侧壁相对,并且防反射机构邻近第二坦克侧壁设置。 作为示例,防反射机构可以包括气泡流,多个消声结构或两个气泡和消声结构的组合。

    Apparatus for uniform cleaning of wafers using megasonic energy

    公开(公告)号:US5579792A

    公开(公告)日:1996-12-03

    申请号:US599007

    申请日:1996-02-09

    IPC分类号: E04B1/84 H01L21/00 B08B3/10

    摘要: Apparatus and method for cleaning/etching the surface of an article with sonic energy in the megahertz range which employ an anti-reflection mechanism within a recirculation tank. A tank having at least one side wall and a bottom structure holds a cleaning/etching liquid and a megasonic transducer is associated with the tank for projecting megasonic energy into the liquid. The anti-reflection mechanism is disposed within the tank in close association with the at least one sidewall or bottom structure of the tank to thereby minimize reflection of megasonic energy from the associated surface. Preferably, the megasonic transducer is associated with a first tank sidewall which opposes a second tank sidewall, and the anti-reflection mechanism is disposed adjacent the second tank sidewall. By way of example, the anti-reflection mechanism can comprise a stream of gas bubbles, a plurality of anechoic structures, or a combination of both gas bubbles and anechoic structures.

    Apparatus for uniform cleaning of wafers using megasonic energy
    8.
    发明授权
    Apparatus for uniform cleaning of wafers using megasonic energy 失效
    使用兆声波能量均匀清洁晶片的装置

    公开(公告)号:US5533540A

    公开(公告)日:1996-07-09

    申请号:US370714

    申请日:1995-01-10

    IPC分类号: E04B1/84 H01L21/00 B08B3/10

    摘要: Apparatus and method for cleaning/etching the surface of an article with sonic energy in the megahertz range which employ an anti-reflection mechanism within a recirculation tank. A tank having at least one side wall and a bottom structure holds a cleaning/etching liquid and a megasonic transducer is associated with the tank for projecting megasonic energy into the liquid. The anti-reflection mechanism is disposed within the tank in close association with the at least one sidewall or bottom structure of the tank to thereby minimize reflection of megasonic energy from the associated surface. Preferably, the megasonic transducer is associated with a first tank sidewall which opposes a second tank sidewall, and the anti-reflection mechanism is disposed adjacent the second tank sidewall. By way of example, the anti-reflection mechanism can comprise a stream of gas bubbles, a plurality of anechoic structures, or a combination of both gas bubbles and anechoic structures.

    摘要翻译: 用于在兆赫兹范围内用声能量清洁/蚀刻物品的表面的装置和方法,其在循环罐内采用防反射机构。 具有至少一个侧壁和底部结构的罐保持清洁/蚀刻液体,并且兆声波换能器与用于将兆声波能量投射到液体中的罐相关联。 防反射机构设置在罐内与罐的至少一个侧壁或底部结构紧密相关联,从而最小化来自相关联表面的兆声波能量的反射。 优选地,兆声波换能器与第二坦克侧壁相对,第一坦克侧壁与第二坦克侧壁相对,并且防反射机构邻近第二坦克侧壁设置。 作为示例,防反射机构可以包括气泡流,多个消声结构或两个气泡和消声结构的组合。

    Method and apparatus for combined particle location and removal
    10.
    发明授权
    Method and apparatus for combined particle location and removal 失效
    用于组合颗粒定位和去除的方法和装置

    公开(公告)号:US06356653B2

    公开(公告)日:2002-03-12

    申请号:US09116680

    申请日:1998-07-16

    IPC分类号: G06K900

    CPC分类号: H01L22/20 H01L21/268

    摘要: A method for removing one or more particles from a surface of an object is provided. The method has first and second steps of detecting and locating the one or more particles on the surface of the object. In a third step, focused energy is directed onto one or more of the detected particles to break a bond energy between the one or more particles and the surface thereby removing the one or more particles from the surface. In preferred variations of the method of the present invention, the object is a semiconductor wafer and the directed focused energy is in the form of a laser. Also provided is an apparatus for removing the plurality of particles from the surface of the object. The apparatus includes a detector for detecting and locating the plurality of particles on the surface of the object, and a laser for directing focused energy on one or more of the detected particles to break a bond energy between the one or more particles and the surface thereby removing the one or more particles from the surface.

    摘要翻译: 提供了从物体表面去除一个或多个颗粒的方法。 该方法具有检测和定位物体表面上的一个或多个颗粒的第一和第二步骤。 在第三步骤中,将聚焦的能量引导到一个或多个检测到的颗粒上以破坏一个或多个颗粒与表面之间的键能,从而从表面除去一个或多个颗粒。 在本发明方法的优选变型中,目的是半导体晶片,并且定向的聚焦能是激光的形式。 还提供了用于从物体的表面去除多个颗粒的装置。 该装置包括用于检测和定位物体表面上的多个颗粒的检测器和用于将聚焦能量引导到一个或多个检测到的颗粒上的激光器,以破坏一个或多个颗粒与表面之间的结合能,由此 从表面去除一个或多个颗粒。