公开(公告)号：US20150046121A1

公开(公告)日：2015-02-12

申请号：US14449646

申请日：2014-08-01

Applicant: KLA-Tencor Corporation

Inventor： Thaddeus Gerard Dziura ,  Stilian Ivanov Pandev ,  Alexander Kuznetsov ,  Andrei V. Shchegrov

IPC: G01N21/956 ,  G01N21/95

CPC classification number: G01N21/956 ,  G01N21/9501 ,  G01N2201/12

Abstract: Disclosed are apparatus and methods for characterizing a plurality of structures of interest on a semiconductor wafer. A plurality of spectra signals are measured from a particular structure of interest at a plurality of azimuth angles from one or more sensors of a metrology system. A difference spectrum is determined based on the spectra signals obtained for the azimuth angles. A quality indication of the particular structure of interest is determined and reported based on analyzing the difference spectrum.

Abstract translation: 公开了用于在半导体晶片上表征感兴趣的多个结构的装置和方法。 从测量系统的一个或多个传感器的多个方位角处，从感兴趣的特定结构测量多个频谱信号。 基于为方位角获得的谱信号确定差谱。 通过分析差异谱确定和报告感兴趣的特定结构的质量指示。

公开(公告)号：US20130222795A1

公开(公告)日：2013-08-29

申请号：US13770202

申请日：2013-02-19

Applicant: KLA-Tencor Corporation

Inventor： Jonathan M. Madsen ,  Andrei V. Shchegrov ,  Michael Bakeman ,  Thaddeus Gerard Dziura ,  Alexander Kuznetsov ,  Bin-Ming (Benjamin) Tsai

IPC: G01N21/956

CPC classification number: G01N21/956 ,  G01B11/0625 ,  G01B11/0641 ,  G01B2210/56 ,  G03F7/70683 ,  H01L22/30

Abstract: Methods and systems for enhancing metrology sensitivity to particular parameters of interest are presented. Field enhancement elements (FEEs) are constructed as part of a specimen to enhance the measurement sensitivity of structures of interest present on the specimen. The design of the FEEs takes into account measurement goals and manufacturing design rules to make target fabrication compatible with the overall device fabrication process. Measurement of opaque materials, high-aspect ratio structures, structures with low-sensitivity, or mutually correlated parameters is enhanced by the addition of FEEs. Exemplary measurements include critical dimension, film thickness, film composition, and optical scatterometry overlay. In some examples, a target element includes different FEEs to improve the measurement of different structures of interest. In other examples, different target elements include different FEEs. In some other examples, field enhancement elements are shaped to concentrate an electric field in a thin film deposited over the FEE.

Abstract translation: 提出了用于增强对感兴趣的特定参数的度量敏感性的方法和系统。 场增强元件（FEE）被构造为样本的一部分，以增强样品上存在的感兴趣结构的测量灵敏度。 FEE的设计考虑了测量目标和制造设计规则，使目标制造与整个设备制造过程相兼容。 通过添加FEE，增强不透明材料，高纵横比结构，低灵敏度结构或相互关联的参数的测量。 示例性测量包括临界尺寸，膜厚度，膜组成和光学散射测量覆盖。 在一些示例中，目标元素包括不同的FEE以改善感兴趣的不同结构的测量。 在其他示例中，不同的目标元素包括不同的FEE。 在一些其他示例中，场增强元件被成形为将电场集中在沉积在FEE上的薄膜中。

公开(公告)号：US11333621B2

公开(公告)日：2022-05-17

申请号：US16030849

申请日：2018-07-09

Applicant: KLA-Tencor Corporation

Inventor： Daniel Wack ,  Oleg Khodykin ,  Andrei V. Shchegrov ,  Alexander Kuznetsov ,  Nikolay Artemiev ,  Michael Friedmann

IPC: G01N23/201 ,  G01N23/20008 ,  H01L21/67 ,  H01L21/66

Abstract: Methods and systems for performing measurements of semiconductor structures based on high-brightness, polychromatic, reflective small angle x-ray scatterometry (RSAXS) metrology are presented herein. RSAXS measurements are performed over a range of wavelengths, angles of incidence, and azimuth angles with small illumination beam spot size, simultaneously or sequentially. In some embodiments, RSAXS measurements are performed with x-ray radiation in the soft x-ray (SXR) region at grazing angles of incidence in the range of 5-20 degrees. In some embodiments, the x-ray illumination source size is 10 micrometers or less, and focusing optics project the source area onto a wafer with a demagnification factor of 0.2 or less, enabling an incident x-ray illumination spot size of less than two micrometers. In another aspect, active focusing optics project programmed ranges of illumination wavelengths, angles of incidence, and azimuth angles, or any combination thereof, onto a metrology area, either simultaneously or sequentially.

公开(公告)号：US10895541B2

公开(公告)日：2021-01-19

申请号：US16230489

申请日：2018-12-21

Applicant: KLA-Tencor Corporation

Inventor： Andrei V. Shchegrov ,  Alexander Kuznetsov ,  Oleg Khodykin

IPC: G01N23/223 ,  G01N23/2273 ,  G01N23/083 ,  G01N23/207 ,  G02B27/09 ,  H05G1/30

Abstract: Methods and systems for measuring structural and material characteristics of semiconductor structures based on combined x-ray reflectometry (XRR) and x-ray photoelectron spectroscopy (XPS) are presented herein. A combined XRR and XPS system includes an x-ray illumination source and x-ray illumination optics shared by both the XRR and XPS measurement subsystems. This increases throughput and measurement accuracy by simultaneously collecting XRR and XPS measurement data from the same area of the wafer. A combined XRR and XPS system improves measurement accuracy by employing XRR measurement data to improve measurements performed by the XPS subsystem, and vice-versa. In addition, a combined XRR and XPS system enables simultaneous analysis of both XRR and XPS measurement data to more accurately estimate values of one of more parameters of interest. In a further aspect, any of measurement spot size, photon flux, beam shape, beam diameter, and illumination energy are independently controlled.

公开(公告)号：US10804167B2

公开(公告)日：2020-10-13

申请号：US16257066

申请日：2019-01-24

Applicant: KLA-Tencor Corporation

Inventor： David Y. Wang ,  Esen Salcin ,  Michael Friedmann ,  Derrick Shaughnessy ,  Andrei V. Shchegrov ,  Jonathan M. Madsen ,  Alexander Kuznetsov

IPC: H01L21/66 ,  G03F7/20 ,  G01N21/95 ,  G01B11/02 ,  G06N3/02 ,  G01N21/21

Abstract: Methods and systems for performing co-located measurements of semiconductor structures with two or more measurement subsystems are presented herein. To achieve a sufficiently small measurement box size, the metrology system monitors and corrects the alignment of the measurement spot of each metrology subsystem with a metrology target to achieve maximum co-location of the measurement spots of each metrology subsystem with the metrology target. In another aspect, measurements are performed simultaneously by two or more metrology subsystems at high throughput at the same wafer location. Furthermore, the metrology system effectively decouples simultaneously acquired measurement signals associated with each measurement subsystem. This maximizes signal information associated with simultaneous measurements of the same metrology by two or more metrology subsystems.

公开(公告)号：US10801975B2

公开(公告)日：2020-10-13

申请号：US13887343

申请日：2013-05-05

Applicant: KLA-Tencor Corporation

Inventor： Michael S. Bakeman ,  Andrei V. Shchegrov

IPC: G01N23/201 ,  G01N21/84 ,  G03F7/20 ,  G01N21/956

Abstract: Methods and systems for performing simultaneous optical scattering and small angle x-ray scattering (SAXS) measurements over a desired inspection area of a specimen are presented. SAXS measurements combined with optical scatterometry measurements enables a high throughput metrology tool with increased measurement capabilities. The high energy nature of x-ray radiation penetrates optically opaque thin films, buried structures, high aspect ratio structures, and devices including many thin film layers. SAXS and optical scatterometry measurements of a particular location of a planar specimen are performed at a number of different out of plane orientations. This increases measurement sensitivity, reduces correlations among parameters, and improves measurement accuracy. In addition, specimen parameter values are resolved with greater accuracy by fitting data sets derived from both SAXS and optical scatterometry measurements based on models that share at least one geometric parameter. The fitting can be performed sequentially or in parallel.

公开(公告)号：US10732516B2

公开(公告)日：2020-08-04

申请号：US15861938

申请日：2018-01-04

Applicant: KLA-Tencor Corporation

Inventor： Stilian Ivanov Pandev ,  Andrei V. Shchegrov ,  Wei Lu

IPC: G03F7/20 ,  G01B11/14

Abstract: Methods and systems for robust overlay error measurement based on a trained measurement model are described herein. The measurement model is trained from raw scatterometry data collected from Design of Experiments (DOE) wafers by a scatterometry based overlay metrology system. Each measurement site includes one or more metrology targets fabricated with programmed overlay variations and known process variations. Each measurement site is measured with known metrology system variations. In this manner, the measurement model is trained to separate actual overlay from process variations and metrology system variations which affect the overlay measurement. As a result, an estimate of actual overlay by the trained measurement model is robust to process variations and metrology system variations. The measurement model is trained based on scatterometry data collected from the same metrology system used to perform measurements. Thus, the measurement model is not sensitive to systematic errors, aysmmetries, etc.

公开(公告)号：US10648796B2

公开(公告)日：2020-05-12

申请号：US15885504

申请日：2018-01-31

Applicant: KLA-Tencor Corporation

Inventor： Noam Sapiens ,  Kevin A. Peterlinz ,  Alexander Buettner ,  Kerstin Purrucker ,  Andrei V. Shchegrov

IPC: G01B11/24 ,  G03F7/20 ,  G01N21/21 ,  G01N21/956

Abstract: Methods and systems are presented to reduce the illumination spot size projected onto a measurement target and associated spillover onto area surrounding a measurement target. In one aspect, a spatial light modulator (SLM) is located in the illumination path between the illumination light source and the measurement sample. The SLM is configured to modulate amplitude, phase, or both, across the path of the illumination light to reduce wavefront errors. In some embodiments, the desired state of the SLM is based on wavefront measurements performed in an optical path of the metrology system. In another aspect, an illumination aperture having an image plane tilted at an oblique angle with respect to a beam of illumination light is employed to overcome defocusing effects in metrology systems that employ oblique illumination of the measurement sample. In some embodiments, the illumination aperture, objective lens, and specimen are aligned to satisfy the Scheimpflug condition.

公开(公告)号：US10545104B2

公开(公告)日：2020-01-28

申请号：US15141453

申请日：2016-04-28

Applicant: KLA-Tencor Corporation

Inventor： John Hench ,  Andrei V. Shchegrov ,  Michael S. Bakeman

IPC: G01N23/207

Abstract: Methods and systems for performing overlay and edge placement errors of device structures based on x-ray diffraction measurement data are presented. Overlay error between different layers of a metrology target is estimated based on the intensity variation within each x-ray diffraction order measured at multiple, different angles of incidence and azimuth angles. The estimation of overlay involves a parameterization of the intensity modulations of common orders such that a low frequency shape modulation is described by a set of basis functions and a high frequency overlay modulation is described by an affine-circular function including a parameter indicative of overlay. In addition to overlay, a shape parameter of the metrology target is estimated based on a fitting analysis of a measurement model to the intensities of the measured diffraction orders. In some examples, the estimation of overlay and the estimation of one or more shape parameter values are performed simultaneously.

公开(公告)号：US20200025554A1

公开(公告)日：2020-01-23

申请号：US15362741

申请日：2016-11-28

Applicant: KLA-Tencor Corporation

Inventor： Antonio A. Gellineau ,  Alexander Kuznetsov ,  John J. Hench ,  Andrei V. Shchegrov ,  Stilian Ivanov Pandev

IPC: G01B11/02

Abstract: A system, method and computer program product are provided for selecting signals to be measured utilizing a metrology tool that optimizes the precision of the measurement. The technique includes the steps of simulating a set of signals for measuring one or more parameters of a metrology target. A normalized Jacobian matrix corresponding to the set of signals is generated, a subset of signals in the simulated set of signals is selected that optimizes a performance metric associated with measuring the one or more parameters of the metrology target based on the normalized Jacobian matrix, and a metrology tool is utilized to collect a measurement for each signal in the subset of signals for the metrology target. For a given number of signals collected by the metrology tool, this technique optimizes the precision of such measurements over conventional techniques that collect signals uniformly distributed over a range of process parameters.