Charged-particle-beam microlithography methods exhibiting reduced coulomb effects
    51.
    发明授权
    Charged-particle-beam microlithography methods exhibiting reduced coulomb effects 失效
    显示减小的库仑效应的带电粒子束微光刻法

    公开(公告)号:US06756182B2

    公开(公告)日:2004-06-29

    申请号:US10170040

    申请日:2002-06-11

    IPC分类号: G03C500

    摘要: Methods are disclosed for performing charged-particle-beam (CPB, e.g., electron-beam) microlithography with reduced Coulomb effects being manifest in pattern images as formed on the surface of a sensitive substrate. The pattern is defined on a segmented reticle, which can be a scattering-stencil reticle or scattering-membrane reticle. In an embodiment, the beam current actually reaching the substrate, as a proportion of beam current actually passing through the reticle, is reduced to 50% or less during exposure of the pattern. To achieve this reduction, the pattern as defined on the reticle can be normal or inverted in tone as required, and the resist on the substrate can be positive or negative in tone as required. In an example embodiment, the beam current reaching the substrate is reduced by establishing an opening ratio of 50% or less for the pattern as a whole as defined on the reticle. The opening ratio is expressed as 100[Aws/(Aws+Ahs)], wherein Ahs is a total area of the reticle occupied by both the weakly scattering reticle membrane and the highly scattering layer, and Aws is a total area of the reticle occupied by only the weakly scattering reticle membrane.

    摘要翻译: 公开了用于执行带电粒子束(CPB,例如电子束)微光刻的方法,其具有减少的库仑效应,表现为形成在敏感基板的表面上的图案图像。 该图案被定义在分割的掩模版上,该掩模版可以是散射 - 模板掩模版或散射膜掩模版。 在一个实施例中,当图案的曝光期间,通过实际通过标线的束电流的比例实际到达衬底的束电流减小到50%或更小。 为了实现这种减小,如在掩模版上限定的图案可以根据需要正常或反转,并且基板上的抗蚀剂可以根据需要为正或负色调。 在一个示例性实施例中,通过为分划板上定义的整体图案建立50%或更小的开口率来减小到达衬底的束电流。 开口率表示为100 [Aws /(Aws + Ahs)],其中Ahs是由弱散射掩模版膜和高度散射层所占据的掩模版的总面积,Aws是所述掩模版的总面积 只有弱散射掩模版膜。

    Projection-exposure methods and apparatus exhibiting increased throughput
    52.
    发明授权
    Projection-exposure methods and apparatus exhibiting increased throughput 失效
    投影曝光方法和装置显示出增加的产量

    公开(公告)号:US06699639B2

    公开(公告)日:2004-03-02

    申请号:US10359524

    申请日:2003-02-05

    申请人: Kazuaki Suzuki

    发明人: Kazuaki Suzuki

    IPC分类号: G03C500

    摘要: Projection-exposure apparatus and methods are disclosed that exhibit increased throughput by providing improved schemes by which the reticle stage and wafer stage move to accomplish exposure. Portions of a die pattern on a “pattern original” (e.g., reticle) are sequentially illuminated by an energy beam (e.g., beam of electromagnetic radiation or charged particles). The energy beam passes through the pattern portions and forms a demagnified image on a substrate through a projection-optical system. While moving the pattern original and the substrate, the entire die pattern is sequentially illuminated according to an exposure order, and the die pattern is demagnifyingly transferred to the substrate on which the images of the illuminated pattern portions are stitched together. When transferring and exposing the die pattern to multiple locations on the substrate, the exposure order is reversed after exposing each die pattern.

    摘要翻译: 公开了通过提供分划板台和晶片台移动以完成曝光的改进方案来展现增加的生产量的投影曝光装置和方法。 “图案原件”(例如,掩模版)上的裸片图案的部分被能量束(例如,电磁辐射束或带电粒子)依次照射。 能量束通过图案部分,并通过投影光学系统在基板上形成缩小图像。 在移动图案原稿和基板的同时,根据曝光顺序顺序地照射整个裸片图案,并且将裸片图案缩小地转印到其上照射图案部分的图像被缝合在一起的基板。 当将模具图案转印并暴露于基板上的多个位置时,曝光顺序在曝光每个模具图案之后反转。

    Reticle-focus detector, and charged-particle-beam microlithography apparatus and methods comprising same
    53.
    发明授权
    Reticle-focus detector, and charged-particle-beam microlithography apparatus and methods comprising same 失效
    光栅聚焦检测器和带电粒子束微光刻设备及其方法

    公开(公告)号:US06621089B1

    公开(公告)日:2003-09-16

    申请号:US09694089

    申请日:2000-10-19

    申请人: Kazuaki Suzuki

    发明人: Kazuaki Suzuki

    IPC分类号: G03F900

    摘要: The thickness of the reticle used in charged-particle-beam (CPB) microlithography is a few microns at most. Hence, the reticle bends easily and flexes when subject to vibration, causing instability in reticle axial height position relative to the projection-lens system, and errors in image focus, rotation and magnification. Apparatus are disclosed that include a device for detecting the axial height position of the reticle. The device produces one or more beams of light (IR to visible) to strike the reticle at an oblique (not 0 degrees) angle of incidence, detects light reflected from the reticle surface, and detects lateral shifts of the reflected light as received by a height detector. Hence, reticle focus is detected easily and in real time. Multiple detection beams can be used, thereby allowing detection of both axial height position and inclination of the reticle with high accuracy. Reticle-position data can be used to regulate operation of, e.g., an exposure meter.

    摘要翻译: 用于带电粒子束(CPB)微光刻的掩模版的厚度最多为几微米。 因此,当受到振动时,掩模版容易弯曲并弯曲,导致相对于投影透镜系统的标线轴高度位置不稳定,以及图像聚焦,旋转和放大的误差。 公开了包括用于检测掩模版的轴向高度位置的装置的装置。 该装置产生一束或多束光(IR到可见光)以倾斜(非0度)入射角撞击光罩,检测从标线片表面反射的光,并检测由 高度检测器 因此,准确地检测到掩模版焦点。 可以使用多个检测光束,从而能够高精度地检测光罩的轴向高度位置和倾斜度。 标线片位置数据可用于调节例如曝光计的操作。

    Projection-exposure methods and apparatus exhibiting increased throughput
    54.
    发明授权
    Projection-exposure methods and apparatus exhibiting increased throughput 失效
    投影曝光方法和装置显示出增加的产量

    公开(公告)号:US06590218B1

    公开(公告)日:2003-07-08

    申请号:US09461156

    申请日:1999-12-14

    申请人: Kazuaki Suzuki

    发明人: Kazuaki Suzuki

    IPC分类号: H61J37304

    摘要: Projection-exposure apparatus and methods are disclosed that exhibit increased throughput by providing improved schemes by which the reticle stage and wafer stage move to accomplish exposure. Portions of a die pattern on a “pattern original” (e.g., reticle) are sequentially illuminated by an energy beam (e.g., beam of electromagnetic radiation or charged particles). The energy beam passes through the pattern portions and forms a demagnified image on a substrate through a projection-optical system. While moving the pattern original and the substrate, the entire die pattern is sequentially illuminated according to an exposure order, and the die pattern is demagnifyingly transferred to the substrate on which the images of the illuminated pattern portions are stitched together. When transferring and exposing the die pattern to multiple locations on the substrate, the exposure order is reversed after exposing each die pattern.

    摘要翻译: 公开了通过提供分划板台和晶片台移动以完成曝光的改进方案来展现增加的生产量的投影曝光装置和方法。 “图案原件”(例如,掩模版)上的裸片图案的部分被能量束(例如,电磁辐射束或带电粒子)依次照射。 能量束通过图案部分,并通过投影光学系统在基板上形成缩小图像。 在移动图案原稿和基板的同时,根据曝光顺序顺序地照射整个裸片图案,并且将裸片图案缩小地转印到其上照射图案部分的图像被缝合在一起的基板。 当将模具图案转印并暴露于基板上的多个位置时,曝光顺序在曝光每个模具图案之后反转。

    Charged-particle-beam projection-exposure apparatus and methods exhibiting improved alignment and registration of projected pattern portions
    55.
    发明授权
    Charged-particle-beam projection-exposure apparatus and methods exhibiting improved alignment and registration of projected pattern portions 失效
    带电粒子束投影曝光装置和显示改进的投射图案部分的对准和对准的方法

    公开(公告)号:US06573515B1

    公开(公告)日:2003-06-03

    申请号:US09419829

    申请日:1999-10-14

    申请人: Kazuaki Suzuki

    发明人: Kazuaki Suzuki

    IPC分类号: G21G500

    摘要: Charged-particle-beam projection-exposure apparatus and methods are disclosed that achieve improved pattern-transfer accuracy, especially when using a segmented stencil reticle. To such end, the pattern field of a reticle pattern is divided into multiple exposure units that are individually and sequentially exposed onto corresponding regions on a substrate (e.g., semiconductor wafer). Any exposure units defining a feature surrounding an island region are split into complementary exposure units. Boundaries between adjacent exposure units are placed so as not to cross features or feature portions in the respective exposure units, defined by “white” regions of the reticle. Thus, when images of the exposure units are stitched together on the wafer, improved feature registration, alignment, and linewidth control are achieved.

    摘要翻译: 公开了充电粒子束投影曝光装置和方法,其实现了改进的图案转印精度,特别是当使用分段模版掩模版时。 为此,将掩模版图案的图案区域分割为单独地且顺序地暴露在基板(例如,半导体晶片)上的相应区域上的多个曝光单元。 定义围绕岛屿区域的特征的任何曝光单元被分成互补曝光单元。 相邻曝光单元之间的边界被放置成不会在由掩模版的“白色”区域限定的各个曝光单元中的特征部分或特征部分交叉。 因此,当在晶片上将曝光单元的图像拼接在一起时,实现了改进的特征对准,对准和线宽控制。

    Multilayer ceramic part
    57.
    发明授权
    Multilayer ceramic part 失效
    多层陶瓷部件

    公开(公告)号:US06235221B1

    公开(公告)日:2001-05-22

    申请号:US09315156

    申请日:1999-05-20

    IPC分类号: A01B102

    摘要: A multilayer ceramic part of the invention comprises an internal conductor layer and a ceramic layer which are formed by co-firing. The internal conductor layer is formed of an electrical conducting material containing silver as a main component, and the ceramic layer is formed of an yttrium-iron-garnet based oxide magnetic material with silver added thereto. Thus, the multilayer ceramic part can be fabricated in high yields, even when its size is much more smaller than that of a multilayer ceramic part fabricated until now.

    摘要翻译: 本发明的多层陶瓷部件包括通过共烧形成的内导体层和陶瓷层。 内部导体层由含有银作为主要成分的导电材料形成,陶瓷层由添加有银的钇 - 铁 - 石榴石基氧化物磁性材料形成。 因此,即使当其尺寸远远小于迄今为止制造的多层陶瓷部件的尺寸时,也可以高产率地制造多层陶瓷部件。

    Conductor paste and multilayer ceramic part using the same
    58.
    发明授权
    Conductor paste and multilayer ceramic part using the same 失效
    导体糊和多层陶瓷部分使用相同

    公开(公告)号:US6120884A

    公开(公告)日:2000-09-19

    申请号:US43571

    申请日:1998-05-12

    摘要: An object is to provide a conductor paste of quality which uses a silver base internal conductor, suppresses the generation of voids and the concomitant occurrence of cracks even when co-fired with ceramic material by the conductor melting method, and has improved productivity, reduced cost, and improved electrical properties. The conductor paste is prepared by dispersing a silver base conductive material and a metal oxide in a vehicle. At least one of Ga oxide, La oxide, Pr oxide, Sm oxide, Eu oxide, Gd oxide, Dy oxide, Er oxide, Tm oxide, and Yb oxide is used as the metal oxide. The conductor paste is fired at a temperature between the melting point and lower than the boiling point of the conductive material.

    摘要翻译: PCT No.PCT / JP97 / 02144 Sec。 371日期:1998年5月12日 102(e)日期1998年5月12日PCT提交1997年6月23日PCT公布。 第WO98 / 05045号公报。 日期1998年2月5日,目的在于提供使用银基内部导体的质量导体糊,即使在通过导体熔融法与陶瓷材料共烧的同时,也抑制空隙的产生和伴随的裂纹的发生,并具有 提高生产率,降低成本和改善电性能。 通过将银基导电材料和金属氧化物分散在载体中来制备导体糊料。 使用Ga氧化物,La氧化物,Pr氧化物,Sm氧化物,Eu氧化物,Gd氧化物,Dy氧化物,Er氧化物,Tm氧化物和Yb氧化物中的至少一种作为金属氧化物。 导体膏在熔点低于导电材料的沸点之间的温度下焙烧。

    Semiconductor device having stable breakdown voltage in wiring area
    59.
    发明授权
    Semiconductor device having stable breakdown voltage in wiring area 失效
    半导体器件在布线区域具有稳定的击穿电压

    公开(公告)号:US5420450A

    公开(公告)日:1995-05-30

    申请号:US320643

    申请日:1994-10-11

    摘要: A semiconductor device having stable breakdown voltage in wiring area. The semiconductor has a first conducting type semiconductor substrate with a plurality of second conducting type first semiconductor regions formed on one part of the surface of the first conducting type semiconductor substrate. A first conducting type high density diffused second semiconductor region is formed on one part of the surface within the second conducting type first semiconductor region. A gate electrode material extends across one part of the surface of the first conducting type semiconductor substrate, where one part of the surface of the first conducting type high density diffused second semiconductor region and the second conducting type first semiconductor region are not formed. An insulating film covers the gate electrode material and a metal source wiring is connected to the first conducting type high density diffused second semiconductor region and the second conducting type first semiconductor region. A metal gate wiring is connected to one part of the surface of the gate electrode material through an open section provided in the insulating film, and second conducting type third semiconductor regions are formed as a plurality of partitions on the surface of the first conducting type semiconductor substrate on the lower part of the metal gate wiring. In the semiconductor device, the second conducting type third semiconductor region is positioned to approach the limit reached by a depletion layer extending from the second conducting type third semiconductor region toward the first conducting type semiconductor substrate.

    摘要翻译: 一种在布线区域具有稳定的击穿电压的半导体器件。 半导体具有形成在第一导电型半导体衬底的表面的一部分上的多个第二导电型第一半导体区域的第一导电型半导体衬底。 第一导电型高密度扩散第二半导体区域形成在第二导电型第一半导体区域内的表面的一部分上。 栅电极材料延伸穿过第一导电型半导体衬底的表面的一部分,其中第一导电型高密度扩散第二半导体区域和第二导电型第一半导体区域的表面的一部分未形成。 绝缘膜覆盖栅电极材料,并且金属源布线连接到第一导电型高密度扩散第二半导体区域和第二导电型第一半导体区域。 金属栅极布线通过设置在绝缘膜上的开口部与栅极材料的一部分连接,第二导电型第三半导体区域形成为第一导电型半导体的表面上的多个隔板 基板在金属栅极布线的下部。 在半导体器件中,第二导电型第三半导体区域被定位成接近由从第二导电类型第三半导体区域向第一导电型半导体衬底延伸的耗尽层达到的极限。

    Energy amount control device
    60.
    发明授权
    Energy amount control device 失效
    能量控制装置

    公开(公告)号:US5097291A

    公开(公告)日:1992-03-17

    申请号:US688837

    申请日:1991-04-22

    申请人: Kazuaki Suzuki

    发明人: Kazuaki Suzuki

    IPC分类号: G03F7/20

    摘要: An energy amount control device having a pulse energy generating source which produces pulse energy with a predetermined range of energy fluctuations per oscillation, and adjusting voltage applied to the energy generating source to thereby control an energy amount of the pulse energy, the energy amount control device comprising a storage unit for storing information about the relation between predetermined voltage to produce pulse energy in the energy generating source and an energy amount of the pulse energy emitted from the energy generating source under the predetermined voltage; an energy amount measuring unit for detecting the energy amount of the pulse energy actually emitted from the energy generating source; an arithmetic unit for updating the information stored in the storage unit at predetermined timing based on the predetermined voltage to produce the pulse energy in the energy generating source and the energy amount detected by the energy amount measuring unit; and decision unit for determining the predetermined voltage corresponding to the energy amount of the pulse energy to be next emitted, based on the information updated by the arithmetic unit.

    摘要翻译: 一种能量量控制装置,具有脉冲能量产生源,其产生具有预定的每个振荡的能量波动范围的脉冲能量,并且调整施加到能量发生源的电压,从而控制脉冲能量的能量,能量控制装置 包括存储单元,用于存储关于在所述能量产生源中产生脉冲能量的预定电压之间的关系的信息和在所述预定电压下从所述能量发生源发射的脉冲能量的能量; 能量测量单元,用于检测从能量发生源实际发射的脉冲能量的能量; 算术单元,用于基于预定电压在预定定时更新存储在存储单元中的信息,以产生能量产生源中的脉冲能量和由能量测量单元检测的能量; 以及决定单元,用于基于由所述运算单元更新的信息来确定与下一个发射的脉冲能量的能量量对应的预定电压。