摘要:
Methods are disclosed for performing charged-particle-beam (CPB, e.g., electron-beam) microlithography with reduced Coulomb effects being manifest in pattern images as formed on the surface of a sensitive substrate. The pattern is defined on a segmented reticle, which can be a scattering-stencil reticle or scattering-membrane reticle. In an embodiment, the beam current actually reaching the substrate, as a proportion of beam current actually passing through the reticle, is reduced to 50% or less during exposure of the pattern. To achieve this reduction, the pattern as defined on the reticle can be normal or inverted in tone as required, and the resist on the substrate can be positive or negative in tone as required. In an example embodiment, the beam current reaching the substrate is reduced by establishing an opening ratio of 50% or less for the pattern as a whole as defined on the reticle. The opening ratio is expressed as 100[Aws/(Aws+Ahs)], wherein Ahs is a total area of the reticle occupied by both the weakly scattering reticle membrane and the highly scattering layer, and Aws is a total area of the reticle occupied by only the weakly scattering reticle membrane.
摘要:
Projection-exposure apparatus and methods are disclosed that exhibit increased throughput by providing improved schemes by which the reticle stage and wafer stage move to accomplish exposure. Portions of a die pattern on a “pattern original” (e.g., reticle) are sequentially illuminated by an energy beam (e.g., beam of electromagnetic radiation or charged particles). The energy beam passes through the pattern portions and forms a demagnified image on a substrate through a projection-optical system. While moving the pattern original and the substrate, the entire die pattern is sequentially illuminated according to an exposure order, and the die pattern is demagnifyingly transferred to the substrate on which the images of the illuminated pattern portions are stitched together. When transferring and exposing the die pattern to multiple locations on the substrate, the exposure order is reversed after exposing each die pattern.
摘要:
The thickness of the reticle used in charged-particle-beam (CPB) microlithography is a few microns at most. Hence, the reticle bends easily and flexes when subject to vibration, causing instability in reticle axial height position relative to the projection-lens system, and errors in image focus, rotation and magnification. Apparatus are disclosed that include a device for detecting the axial height position of the reticle. The device produces one or more beams of light (IR to visible) to strike the reticle at an oblique (not 0 degrees) angle of incidence, detects light reflected from the reticle surface, and detects lateral shifts of the reflected light as received by a height detector. Hence, reticle focus is detected easily and in real time. Multiple detection beams can be used, thereby allowing detection of both axial height position and inclination of the reticle with high accuracy. Reticle-position data can be used to regulate operation of, e.g., an exposure meter.
摘要:
Projection-exposure apparatus and methods are disclosed that exhibit increased throughput by providing improved schemes by which the reticle stage and wafer stage move to accomplish exposure. Portions of a die pattern on a “pattern original” (e.g., reticle) are sequentially illuminated by an energy beam (e.g., beam of electromagnetic radiation or charged particles). The energy beam passes through the pattern portions and forms a demagnified image on a substrate through a projection-optical system. While moving the pattern original and the substrate, the entire die pattern is sequentially illuminated according to an exposure order, and the die pattern is demagnifyingly transferred to the substrate on which the images of the illuminated pattern portions are stitched together. When transferring and exposing the die pattern to multiple locations on the substrate, the exposure order is reversed after exposing each die pattern.
摘要:
Charged-particle-beam projection-exposure apparatus and methods are disclosed that achieve improved pattern-transfer accuracy, especially when using a segmented stencil reticle. To such end, the pattern field of a reticle pattern is divided into multiple exposure units that are individually and sequentially exposed onto corresponding regions on a substrate (e.g., semiconductor wafer). Any exposure units defining a feature surrounding an island region are split into complementary exposure units. Boundaries between adjacent exposure units are placed so as not to cross features or feature portions in the respective exposure units, defined by “white” regions of the reticle. Thus, when images of the exposure units are stitched together on the wafer, improved feature registration, alignment, and linewidth control are achieved.
摘要:
A non-reciprocal circuit element includes a microstrip TMn10 resonator (n is a positive integer) with a metal disk and branches projecting from the metal disk in a trigonally symmetric structure, and a ferrite magnetic body spontaneously magnetized and coaxially disposed on the microstrip TMn10 resonator. The metal disk and the branches are formed on a non-magnetic dielectric board having a ground conductor on its bottom face. The ferrite magnetic body is arranged so that a position of an electric field node matches to one of the branches.
摘要:
A multilayer ceramic part of the invention comprises an internal conductor layer and a ceramic layer which are formed by co-firing. The internal conductor layer is formed of an electrical conducting material containing silver as a main component, and the ceramic layer is formed of an yttrium-iron-garnet based oxide magnetic material with silver added thereto. Thus, the multilayer ceramic part can be fabricated in high yields, even when its size is much more smaller than that of a multilayer ceramic part fabricated until now.
摘要:
An object is to provide a conductor paste of quality which uses a silver base internal conductor, suppresses the generation of voids and the concomitant occurrence of cracks even when co-fired with ceramic material by the conductor melting method, and has improved productivity, reduced cost, and improved electrical properties. The conductor paste is prepared by dispersing a silver base conductive material and a metal oxide in a vehicle. At least one of Ga oxide, La oxide, Pr oxide, Sm oxide, Eu oxide, Gd oxide, Dy oxide, Er oxide, Tm oxide, and Yb oxide is used as the metal oxide. The conductor paste is fired at a temperature between the melting point and lower than the boiling point of the conductive material.
摘要:
A semiconductor device having stable breakdown voltage in wiring area. The semiconductor has a first conducting type semiconductor substrate with a plurality of second conducting type first semiconductor regions formed on one part of the surface of the first conducting type semiconductor substrate. A first conducting type high density diffused second semiconductor region is formed on one part of the surface within the second conducting type first semiconductor region. A gate electrode material extends across one part of the surface of the first conducting type semiconductor substrate, where one part of the surface of the first conducting type high density diffused second semiconductor region and the second conducting type first semiconductor region are not formed. An insulating film covers the gate electrode material and a metal source wiring is connected to the first conducting type high density diffused second semiconductor region and the second conducting type first semiconductor region. A metal gate wiring is connected to one part of the surface of the gate electrode material through an open section provided in the insulating film, and second conducting type third semiconductor regions are formed as a plurality of partitions on the surface of the first conducting type semiconductor substrate on the lower part of the metal gate wiring. In the semiconductor device, the second conducting type third semiconductor region is positioned to approach the limit reached by a depletion layer extending from the second conducting type third semiconductor region toward the first conducting type semiconductor substrate.
摘要:
An energy amount control device having a pulse energy generating source which produces pulse energy with a predetermined range of energy fluctuations per oscillation, and adjusting voltage applied to the energy generating source to thereby control an energy amount of the pulse energy, the energy amount control device comprising a storage unit for storing information about the relation between predetermined voltage to produce pulse energy in the energy generating source and an energy amount of the pulse energy emitted from the energy generating source under the predetermined voltage; an energy amount measuring unit for detecting the energy amount of the pulse energy actually emitted from the energy generating source; an arithmetic unit for updating the information stored in the storage unit at predetermined timing based on the predetermined voltage to produce the pulse energy in the energy generating source and the energy amount detected by the energy amount measuring unit; and decision unit for determining the predetermined voltage corresponding to the energy amount of the pulse energy to be next emitted, based on the information updated by the arithmetic unit.