公开(公告)号：US07517618B2

公开(公告)日：2009-04-14

申请号：US11047449

申请日：2005-01-31

申请人： Shigeru Moriya

发明人： Shigeru Moriya

IPC分类号： G03F9/00

CPC分类号： H01J37/3175 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  G03F1/50 ,  H01J2237/31761 ,  H01J2237/31767 ,  H01J2237/31788

摘要： A mask capable of improving accuracy of transferring a pattern by making the configuration of a beam portion regular and simple, an exposure method using the mask and a production method of a semiconductor device; wherein the beam portion is composed of a first beam portion wherein a plurality of first beams extending by inclining with respect to the X axis and Y axis are arranged at regular intervals and a second beam portion wherein a plurality of second beams extending by inclining with respect to the X axis and Y axis and intersecting with the first beams are arranged at regular intervals, and the beam configuration is made regular on all region surrounded by a supporting frame; four unit exposure regions for performing exposure by being superimposed on an object to be exposed are set in the region surrounded by the supporting frame, and a membrane of at least two unit exposure regions exists at any position when superimposing the four unit exposure regions.

摘要翻译： 一种能够通过使梁部分的构造规则且简单的方式提高图案转印的精度的掩模，使用该掩模的曝光方法和半导体装置的制造方法; 其中所述光束部分由第一光束部分组成，其中通过相对于所述X轴和Y轴倾斜延伸的多个第一光束以规则的间隔布置，以及第二光束部分，其中多个第二光束通过相对于 以X轴和Y轴与第一光束交叉的方式以规则的间隔布置，并且在由支撑框围绕的所有区域上使光束配置规则化; 在由支撑框架包围的区域中设置用于通过叠加在待曝光物体上进行曝光的四个单元曝光区域，并且当叠加四个单元曝光区域时，在任何位置存在至少两个单元曝光区域的膜。

公开(公告)号：US20040143356A1

公开(公告)日：2004-07-22

申请号：US10629623

申请日：2003-07-30

发明人： Haruo Yoda ,  Yasunari Souda ,  Hiroya Ohta ,  Yoshikiyo Yui ,  Shinichi Hashimoto

IPC分类号： G06F019/00

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3177 ,  H01J2237/31764 ,  H01J2237/31767

摘要： The dimension of the main field as a unit region for exposure is set to an integral submultiple of the arrangement pitch of the LSI to be exposed, by the control computer 62, and the exposure data stored in the form associated with electron beams from a data generation circuit 64 is limited to one-chip data alone in units of a stripe. This data is repeatedly read out to write the stripe. Further, a storage circuit 66 is provided to store the exposure data by means of a double buffer memory unit for each electron beam. While LSI is written according to one of the buffers, the next exposure stripe data is prepared on the other buffer, thereby bringing about a substantial reduction in the required speed of the exposure data generation circuit.

摘要翻译： 通过控制计算机62将作为曝光的单位区域的主场的尺寸设定为要暴露的LSI的排列间距的整数倍，并且以与来自数据的电子束相关联的形式存储的曝光数据 发生电路64仅以条形为单位限于单芯片数据。 该数据被重复读出以写入条带。 此外，存储电路66用于通过用于每个电子束的双缓冲存储器单元来存储曝光数据。 当根据缓冲器中的一个写入LSI时，在另一个缓冲器上准备下一个曝光条带数据，从而显着降低曝光数据产生电路的所需速度。

公开(公告)号：US08878141B2

公开(公告)日：2014-11-04

申请号：US13719702

申请日：2012-12-19

申请人： Canon Kabushiki Kaisha

发明人： Wataru Yamaguchi ,  Takahiro Matsumoto

IPC分类号： G21K5/04 ,  H01J37/317 ,  H01J37/304

CPC分类号： G21K5/04 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3045 ,  H01J37/3177 ,  H01J2237/24578 ,  H01J2237/30438 ,  H01J2237/31767 ,  H01J2237/31774

摘要： The present invention provides a drawing apparatus which performs drawing on a substrate with a plurality of charged particle beams, the apparatus including a stage configured to hold the substrate and to be moved, a charged particle optical system including a deflector configured to deflect the plurality of charged particle beams, a detector configured to detect a charged particle arrived thereat by causing a charged particle beam to impinge on a mark including a plurality of mark elements formed on one of the substrate and the stage, and a processor configured to perform a process of obtaining a position of the mark.

摘要翻译： 本发明提供了一种利用多个带电粒子束在基板上进行绘图的绘图装置，该装置包括一个被配置为保持基板并被移动的台，该带电粒子光学系统包括偏转器，该偏转器被构造成使多个 带电粒子束的检测器，被配置为通过使带电粒子束撞击到形成在基板和台之一上的多个标记元件的标记来检测到达该带电粒子的检测器，以及处理器， 获得商标的位置。

公开(公告)号：US20050170265A1

公开(公告)日：2005-08-04

申请号：US11047449

申请日：2005-01-31

申请人： Shigeru Moriya

发明人： Shigeru Moriya

IPC分类号： G03F1/20 ,  G03F7/20 ,  H01J37/317 ,  H01L21/027 ,  G03C5/00 ,  G03F9/00

CPC分类号： H01J37/3175 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  G03F1/50 ,  H01J2237/31761 ,  H01J2237/31767 ,  H01J2237/31788

摘要： A mask capable of improving accuracy of transferring a pattern by making the configuration of a beam portion regular and simple, an exposure method using the mask and a production method of a semiconductor device; wherein the beam portion is composed of a first beam portion wherein a plurality of first beams extending by inclining with respect to the X axis and Y axis are arranged at regular intervals and a second beam portion wherein a plurality of second beams extending by inclining with respect to the X axis and Y axis and intersecting with the first beams are arranged at regular intervals, and the beam configuration is made regular on all region surrounded by a supporting frame; four unit exposure regions for performing exposure by being superimposed on an object to be exposed are set in the region surrounded by the supporting frame, and a membrane of at least two unit exposure regions exists at any position when superimposing the four unit exposure regions.

摘要翻译： 一种能够通过使梁部分的构造规则且简单的方式提高图案转印的精度的掩模，使用该掩模的曝光方法和半导体装置的制造方法; 其中所述光束部分由第一光束部分组成，其中通过相对于所述X轴和Y轴倾斜延伸的多个第一光束以规则的间隔布置，以及第二光束部分，其中多个第二光束通过相对于 以X轴和Y轴与第一光束交叉的方式以规则的间隔布置，并且在由支撑框围绕的所有区域上使光束配置规则化; 在由支撑框架包围的区域中设置用于通过叠加在待曝光物体上进行曝光的四个单元曝光区域，并且当叠加四个单元曝光区域时，在任何位置存在至少两个单元曝光区域的膜。

公开(公告)号：US20030136922A1

公开(公告)日：2003-07-24

申请号：US10359524

申请日：2003-02-05

申请人： Nikon Corporation

发明人： Kazuaki Suzuki

IPC分类号： H01L021/42

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F7/70425 ,  G03F7/70433 ,  G03F7/70475 ,  H01J37/3174 ,  H01J2237/31761 ,  H01J2237/31764 ,  H01J2237/31767

摘要： Projection-exposure apparatus and methods are disclosed that exhibit increased throughput by providing improved schemes by which the reticle stage and wafer stage move to accomplish exposure. Portions of a die pattern on a nullpattern originalnull (e.g., reticle) are sequentially illuminated by an energy beam (e.g., beam of electromagnetic radiation or charged particles). The energy beam passes through the pattern portions and forms a demagnified image on a substrate through a projection-optical system. While moving the pattern original and the substrate, the entire die pattern is sequentially illuminated according to an exposure order, and the die pattern is demagnifyingly transferred to the substrate on which the images of the illuminated pattern portions are stitched together. When transferring and exposing the die pattern to multiple locations on the substrate, the exposure order is reversed after exposing each die pattern.

公开(公告)号：US20010002301A1

公开(公告)日：2001-05-31

申请号：US09265047

申请日：1999-03-09

发明人： KAZUAKI SUZUKI

IPC分类号： G03C005/00 ,  G03B027/00 ,  G03B027/42

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F7/70425 ,  G03F7/70433 ,  G03F7/70475 ,  H01J37/3174 ,  H01J2237/31761 ,  H01J2237/31764 ,  H01J2237/31767

摘要： Projection-exposure apparatus and methods are disclosed that exhibit increased throughput by providing improved schemes by which the reticle stage and wafer stage move to accomplish exposure. Portions of a die pattern on a nullpattern originalnull (e.g., reticle) are sequentially illuminated by an energy beam (e.g., beam of electromagnetic radiation or charged particles). The energy beam passes through the pattern portions and forms a demagnified image on a substrate through a projection-optical system. While moving the pattern original and the substrate, the entire die pattern is sequentially illuminated according to an exposure order, and the die pattern is demagnifyingly transferred to the substrate on which the images of the illuminated pattern portions are stitched together. When transferring and exposing the die pattern to multiple locations on the substrate, the exposure order is reversed after exposing each die pattern.

摘要翻译： 公开了通过提供分划板台和晶片台移动以完成曝光的改进方案来展现增加的生产量的投影曝光装置和方法。 “图案原件”（例如，掩模版）上的裸片图案的部分被能量束（例如，电磁辐射束或带电粒子）依次照射。 能量束通过图案部分，并通过投影光学系统在基板上形成缩小图像。 在移动图案原稿和基板的同时，根据曝光顺序顺序地照射整个裸片图案，并且将裸片图案缩小地转印到其上照射图案部分的图像被缝合在一起的基板。 当将模具图案转印并暴露于基板上的多个位置时，曝光顺序在曝光每个模具图案之后反转。

公开(公告)号：US07067830B2

公开(公告)日：2006-06-27

申请号：US10629623

申请日：2003-07-30

申请人： Haruo Yoda ,  Yasunari Souda ,  Hiroya Ohta ,  Yoshikiyo Yui ,  Shinichi Hashimoto

发明人： Haruo Yoda ,  Yasunari Souda ,  Hiroya Ohta ,  Yoshikiyo Yui ,  Shinichi Hashimoto

IPC分类号： H01J37/08

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3177 ,  H01J2237/31764 ,  H01J2237/31767

摘要： The dimension of the main field as a unit region for exposure is set to an integral submultiple of the arrangement pitch of the LSI to be exposed, by the control computer 62, and the exposure data stored in the form associated with electron beams from a data generation circuit 64 is limited to one-chip data alone in units of a stripe. This data is repeatedly read out to write the stripe. Further, a storage circuit 66 is provided to store the exposure data by means of a double buffer memory unit for each electron beam. While LSI is written according to one of the buffers, the next exposure stripe data is prepared on the other buffer, thereby bringing about a substantial reduction in the required speed of the exposure data generation circuit.

摘要翻译： 通过控制计算机62将作为曝光的单位区域的主场的尺寸设定为要暴露的LSI的排列间距的整数倍，并且以与来自数据的电子束相关联的形式存储的曝光数据 发生电路64仅以条形为单位限于单芯片数据。 该数据被重复读出以写入条带。 此外，存储电路66用于通过用于每个电子束的双缓冲存储器单元来存储曝光数据。 当根据缓冲器中的一个写入LSI时，在另一个缓冲器上准备下一个曝光条带数据，从而显着降低曝光数据产生电路的所需速度。

公开(公告)号：US06175121B1

公开(公告)日：2001-01-16

申请号：US09159603

申请日：1998-09-24

申请人： Akio Yamada ,  Hiroshi Yasuda

发明人： Akio Yamada ,  Hiroshi Yasuda

IPC分类号： H01J37302

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/16 ,  G03F7/2037 ,  H01J37/3026 ,  H01J2237/31764 ,  H01J2237/31767 ,  H01J2237/31776 ,  H01J2237/31788 ,  H01L21/0279

摘要： A block mask for making a charged particle beam exposure using block exposure includes a plurality of block mask patterns respectively including repeating patterns, where the block mask patterns are arranged in an order dependent on an exposure sequence, at least one first block mask pattern group made up of arbitrary ones of the block mask patterns which are arranged in a predetermined direction, and at least one second block mask pattern group made up of the arbitrary ones of the block mask patterns which are arranged in a direction opposite to the predetermined direction. The second block mask pattern group is arranged adjacent to the first block mask pattern group.

摘要翻译： 使用块曝光进行带电粒子束曝光的块掩模包括分别包括重复图案的多个块掩模图案，其中块掩模图案以依赖于曝光序列的顺序排列，至少一个第一块掩模图案组 沿预定方向布置的块掩模图案中的任意一个块掩模图案，以及由沿与预定方向相反的方向布置的任意块掩模图案组成的至少一个第二块掩模图案组。 第二块掩模图案组被布置为与第一块掩模图案组相邻。

公开(公告)号：US5849436A

公开(公告)日：1998-12-15

申请号：US512912

申请日：1995-08-09

申请人： Akio Yamada ,  Hiroshi Yasuda

发明人： Akio Yamada ,  Hiroshi Yasuda

IPC分类号： G21K5/04 ,  G03F7/16 ,  G03F7/20 ,  H01J37/302 ,  H01L21/027 ,  H01L21/30

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/16 ,  G03F7/2037 ,  H01J37/3026 ,  H01L21/0279 ,  H01J2237/31764 ,  H01J2237/31767 ,  H01J2237/31776 ,  H01J2237/31788

摘要： A block mask for making a charged particle beam exposure using block exposure includes a plurality of block mask patterns respectively including repeating patterns, where the block mask patterns are arranged in an order dependent on an exposure sequence, at least one first block mask pattern group made up of arbitrary ones of the block mask patterns which are arranged in a predetermined direction, and at least one second block mask pattern group made up of the arbitrary ones of the block mask patterns which are arranged in a direction opposite to the predetermined direction. The second block mask pattern group is arranged adjacent to the first block mask pattern group.

摘要翻译： 使用块曝光进行带电粒子束曝光的块掩模包括分别包括重复图案的多个块掩模图案，其中块掩模图案以依赖于曝光序列的顺序排列，至少一个第一块掩模图案组 沿预定方向布置的块掩模图案中的任意一个块掩模图案，以及由沿与预定方向相反的方向布置的任意块掩模图案组成的至少一个第二块掩模图案组。 第二块掩模图案组被布置为与第一块掩模图案组相邻。

公开(公告)号：US5250983A

公开(公告)日：1993-10-05

申请号：US911475

申请日：1992-07-10

申请人： Ryuji Yamamura

发明人： Ryuji Yamamura

IPC分类号： G03F1/42 ,  G03F1/70 ,  G03F7/20 ,  G03F9/00 ,  H01J37/304 ,  H01L21/027 ,  G03B27/28

CPC分类号： G03F9/7084 ,  G03F7/70425 ,  G03F9/7076 ,  H01J37/3045 ,  H01J2237/31767

摘要： An original layout pattern for reticle includes a tip pattern region, a scribe region formed around the tip pattern region, and alignment marks formed in the scribe region. Each end of the alignment marks is not reached to a edge of the original layout pattern. Therefore, when the original layout pattern is formed on the reticle side by side in predetermined times, the alignment marks positioned at an inner portion between two adjacent patterns are separated from each other.

摘要翻译： 用于掩模版的原始布局图案包括尖端图案区域，形成在尖端图案区域周围的划线区域，以及形成在划线区域中的对准标记。 对准标记的每一端都没有到达原始布局图案的边缘。 因此，当在规定时间内并行地在掩模版上形成原始布局图案时，位于两个相邻图案之间的内部的对准标记彼此分离。