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72 条记录 (耗时 0.074 秒)

    Image reading device and method for reading an image with dummy interval
    51.
    发明授权
    Image reading device and method for reading an image with dummy interval 有权
    以虚拟间隔读取图像的图像读取装置和方法

    公开(公告)号：US08908246B2

    公开(公告)日：2014-12-09

    申请号：US13214982

    申请日：2011-08-22

    申请人： Atsushi Sasaki

    发明人： Atsushi Sasaki

    IPC分类号： H04N1/46 ,  H04N1/10 ,  H04N1/40

    CPC分类号： H04N1/40056 ,  H04N1/1017 ,  H04N2201/04767

    摘要： An image reading device has a light source and an image sensor configured to transfer an electric charge accumulated on an opto-electric conversion element to a shift register through a shift gate. A reading controller configured to control image reading inserts a dummy interval into a shift period for which the electric charge is transferred from the opto-electric conversion element so as to shift timing to start sensor reading on every line and to arrange peak positions of noise included in a read image differ from one another on every line.

    摘要翻译： 图像读取装置具有光源和图像传感器，该图像传感器被配置为通过移位门将累积在光电转换元件上的电荷传送到移位寄存器。 配置为控制图像读取的读取控制器将虚拟间隔插入到从光电转换元件传送电荷的移位周期中，以便移位定时以在每行上开始传感器读取，并且布置包括的噪声的峰值位置 读取图像在每条线上彼此不同。

    THIN-FILM TRANSISTOR CIRCUIT SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
    52.
    发明申请
    THIN-FILM TRANSISTOR CIRCUIT SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
    薄膜晶体管电路基板及其制造方法

    公开(公告)号：US20120199827A1

    公开(公告)日：2012-08-09

    申请号：US13329545

    申请日：2011-12-19

    申请人： Tetsuya Shibata ,  Hajime Watakabe ,  Atsushi Sasaki ,  Yuki Matsuura ,  Muneharu Akiyoshi ,  Hiroyuki Watanabe

    发明人： Tetsuya Shibata ,  Hajime Watakabe ,  Atsushi Sasaki ,  Yuki Matsuura ,  Muneharu Akiyoshi ,  Hiroyuki Watanabe

    IPC分类号： H01L29/786 ,  H01L21/34

    CPC分类号： H01L27/1225 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

    摘要： According to one embodiment, a method of manufacturing a thin-film transistor circuit substrate including forming an oxide semiconductor thin film above an insulative substrate, forming a gate insulation film and a gate electrode which are stacked on a first region of the oxide semiconductor thin film, and exposing from the gate insulation film a second region and a third region of the oxide semiconductor thin film, the second region and the third region being located on both sides of the first region of the oxide semiconductor thin film, forming an interlayer insulation film of silicon nitride including dangling bonds of silicon, the interlayer insulation film covering the second region and the third region of the oxide semiconductor thin film, the gate insulation film and the gate electrode, and forming a source electrode and a drain electrode.

    摘要翻译： 根据一个实施例，制造薄膜晶体管电路衬底的方法包括在绝缘衬底上形成氧化物半导体薄膜，形成栅极绝缘膜和栅电极，所述栅极绝缘膜和栅电极层叠在氧化物半导体薄膜的第一区域上 并且从所述栅极绝缘膜暴露所述氧化物半导体薄膜的第二区域和第三区域，所述第二区域和所述第三区域位于所述氧化物半导体薄膜的所述第一区域的两侧，形成层间绝缘膜 包括硅的悬挂键，覆盖第二区域的层间绝缘膜和氧化物半导体薄膜的第三区域，栅极绝缘膜和栅电极，以及形成源电极和漏电极。

    Indole derivative having piperidine ring
    54.
    发明授权
    Indole derivative having piperidine ring 失效
    具有哌啶环的吲哚衍生物

    公开(公告)号：US07538123B2

    公开(公告)日：2009-05-26

    申请号：US11579903

    申请日：2005-05-11

    申请人： Yuichi Suzuki ,  Koichi Ito ,  Atsushi Sasaki ,  Koshi Ueno ,  Miyuki Sakai ,  Hiroki Ishihara ,  Atsuhiko Kubota

    发明人： Yuichi Suzuki ,  Koichi Ito ,  Atsushi Sasaki ,  Koshi Ueno ,  Miyuki Sakai ,  Hiroki Ishihara ,  Atsuhiko Kubota

    IPC分类号： A61K31/454

    CPC分类号： C07D491/08 ,  C07D401/04 ,  C07D401/14 ,  C07D405/14 ,  C07D413/14 ,  C07D417/14

    摘要： The present invention relates to a compound represented by the following formula, a pharmacologically acceptable salt thereof, or a use thereof as a pharmaceutical: wherein R1 and R2 are substituents adjacent to each other, and together with two carbon atoms to each of which they attach, form a 5- to 7-membered non-aromatic carbocyclic group or the like, which may be substituted by 1 to 4 substituents selected from (1) an oxo group, (2) a hydroxyl group, and the like; R3 represents a hydrogen atom or the like; and R6 represents a hydrogen atom or the like. This compound has a superior strength of binding to a 5-HT1A receptor and an antagonism to the receptor, and is useful as an agent for treating or preventing lower urinary tract symptoms, and particularly symptoms regarding urinary storage.

    摘要翻译： 本发明涉及由下式表示的化合物，其药理学可接受的盐或其作为药物的用途：其中R 1和R 2是彼此相邻的取代基，并且与它们各自连接的两个碳原子一起 形成可被1〜4个选自（1）氧代基，（2）羟基等的取代基取代的5〜7元非芳族碳环基等。 R3表示氢原子等; R6表示氢原子等。 该化合物与5-HT 1A受体的结合强度优异，对受体具有拮抗作用，可用作治疗或预防下尿路症状的药剂，特别是有关尿液储存的症状。

    PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD
    56.
    发明申请
    PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD 审中-公开
    等离子体处理装置和等离子体处理方法

    公开(公告)号：US20080105650A1

    公开(公告)日：2008-05-08

    申请号：US11969500

    申请日：2008-01-04

    申请人： Hideo SUGAI ,  Tetsuya Ide ,  Atsushi Sasaki ,  Kazufumi Azuma

    发明人： Hideo SUGAI ,  Tetsuya Ide ,  Atsushi Sasaki ,  Kazufumi Azuma

    IPC分类号： B44C1/22 ,  C23F1/00 ,  H05H1/24 ,  C23C16/00

    CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32834

    摘要： A plasma processing device reduces the pressure inside a vacuum waveguide which propagates microwave to a vacuum of a high degree, thereby preventing abnormal discharge in the vacuum waveguide and around a slot plate, and reduces the difference in pressure between the processing chamber and the vacuum waveguide, thereby lowering the stress applied on the slot plate and a dielectric member for generating surface plasma, thus carrying out high-quality plasma processing.

    摘要翻译： 等离子体处理装置降低真空波导内的压力，将真空波导传播到高真空度，从而防止真空波导和槽板周围的异常放电，并且减小处理室和真空波导之间的压力差 从而降低施加在槽板上的应力和用于产生表面等离子体的电介质构件，从而进行高质量的等离子体处理。

    Plasma processing apparatus
    57.
    发明申请
    Plasma processing apparatus 失效
    等离子体处理装置

    公开(公告)号：US20060090704A1

    公开(公告)日：2006-05-04

    申请号：US11259190

    申请日：2005-10-27

    申请人： Tetsuya Ide ,  Atsushi Sasaki ,  Kazufumi Azuma ,  Yukihiko Nakata

    发明人： Tetsuya Ide ,  Atsushi Sasaki ,  Kazufumi Azuma ,  Yukihiko Nakata

    IPC分类号： C23C16/00

    CPC分类号： H01J37/32238 ,  H01J37/32192

    摘要： In a plasma processing apparatus, electromagnetic waves are radiated from slots of waveguides into a processing chamber via dielectric windows that are supported on beams, thereby generating a plasma. A substrate, which is an object of processing, is processed by the generated plasma. Dielectric plates are attached to those surfaces of the beams, which are opposed to the processing chamber. The thickness of each dielectric plate is set at ½ or more of the intra-dielectric wavelength of the electromagnetic waves. Using the plasma processing apparatus, a large-area processing can uniformly be performed.

    摘要翻译： 在等离子体处理装置中，电磁波通过波导管的电介质窗从波导槽从辐射到处理室中，从而产生等离子体。 作为处理对象的基板由所生成的等离子体进行处理。 电介质板连接到与处理室相对的梁的那些表面。 每个电介质板的厚度被设定为电磁波的介电质内波长的1/2以上。 使用等离子体处理装置可以均匀地进行大面积的处理。