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    Columnar electric device and its manufacturing method
    51.
    发明申请
    Columnar electric device and its manufacturing method 有权
    柱状电器及其制造方法

    公开(公告)号：US20070108556A1

    公开(公告)日：2007-05-17

    申请号：US10579920

    申请日：2004-11-22

    申请人： Yasuhiko Kasama ,  Kenji Omote

    发明人： Yasuhiko Kasama ,  Kenji Omote

    IPC分类号： H01L31/04 ,  H01L29/06

    CPC分类号： G01J5/20 ,  G01D5/26 ,  G01J1/42 ,  H01L29/06 ,  H01L51/0541 ,  H01L51/0545 ,  Y02E10/549 ,  Y02P70/521 ,  Y10T29/49194

    摘要： A sensor whose size can be decreased without marring the performance and which can be installed in a narrow place, an electric device, and a method for easily manufacturing the electric device. By vacuum deposition of semiconductor on a columnar body or by applying a melt, solution, or gel of semiconductor to the columnar body, a coating of semiconductor is formed. Four insulating wires, a stripe band of the connected four insulating wires are wound around the columnar body. Then, one of the insulating wires is removed to form a copper wire in the vacant portion by copper vacuum deposition. Lastly, another insulating wire not adjacent to the copper wire is removed to form an aluminum wire in the vacant portion by aluminum vacuum deposition. By measuring the resistance between the copper and aluminum wires, the intensity of light striking the semiconductor can be determined.

    摘要翻译： 可以在不妨碍性能的情况下降低尺寸并且可以安装在狭窄的位置的传感器，电气设备以及用于容易地制造电气设备的方法。 通过在柱状体上真空沉积半导体或通过将半导体的熔体，溶液或凝胶应用于柱状体，形成半导体涂层。 连接的四根绝缘线的四条绝缘线缠绕在柱状体上。 然后，通过铜真空沉积去除绝缘线中的一根以在空位部分中形成铜线。 最后，除了不与铜线相邻的另一绝缘线，通过铝真空沉积在空部分中形成铝线。 通过测量铜和铝线之间的电阻，可以确定入射到半导体的光的强度。

    Light-emitting element and device
    52.
    发明申请
    Light-emitting element and device 失效
    发光元件及装置

    公开(公告)号：US20060250075A1

    公开(公告)日：2006-11-09

    申请号：US10563555

    申请日：2004-07-12

    申请人： Yasuhiko Kasama ,  Kenji Omote

    发明人： Yasuhiko Kasama ,  Kenji Omote

    IPC分类号： H01L51/00

    CPC分类号： C09K11/06 ,  H01L51/52 ,  H01L51/5203 ,  H05B33/14 ,  H05B33/22 ,  H05B33/26

    摘要： A light-emitting element used for display devices and illuminating devices has been formed on a flat substrate, and therefore, when the size of such devices is increased, manufacturing apparatuses also have to be enlarged. Also, a problem involved has been that even a failure of one light-emitting element causes the entire device to fail, making improvement of production yield difficult. To solve the above problems, in the present invention, light-emitting elements are formed as linear elements, and the linear elements are combined to form a plane light-emitting device. This enables the light-emitting device to be produced by selecting only linear light-emitting elements of good quality, and enlargement of apparatuses and enhancement of production yield can be expected.

    摘要翻译： 用于显示装置和照明装置的发光元件已经形成在平坦的基板上，因此，当这些装置的尺寸增加时，制造装置也必须扩大。 此外，涉及的问题在于，即使一个发光元件的故障也导致整个器件失效，难以提高生产率。 为了解决上述问题，在本发明中，将发光元件形成为线性元件，并且将线性元件组合以形成平面发光器件。 这使得能够通过仅选择质量好的线性发光元件来制造发光器件，并且可以预期设备的扩大和生产良率的提高。

    Linear device
    53.
    发明申请
    Linear device 审中-公开
    线性装置

    公开(公告)号：US20060208324A1

    公开(公告)日：2006-09-21

    申请号：US10568312

    申请日：2004-08-19

    申请人： Yasuhiko Kasama ,  Kenji Omote

    发明人： Yasuhiko Kasama ,  Kenji Omote

    IPC分类号： H01L29/76

    CPC分类号： H01L29/78696 ,  H01L29/0657 ,  H01L29/41733 ,  H01L29/42384

    摘要： A linear MISFET is resilient, flexible and capable of being fabricated into an integrated circuit in an arbitrary shape. Typically a structure includes a source region and drain region arranged in parallel. However, since a channel length of the MISFET for determining the electric characteristics thereof is determined by a distance between the source region and the drain region across a cylindrical gate insulating region, it has been difficult to downsize the channel length or improve reproducibility thereof. The present MISFET includes a semiconductor region serving as a channel region interposed between a source region(s) and a drain. Application of control voltage to the semiconductor region through the gate insulating region, controls electric current flowing between the source regions and drain region(s). The channel length is determined by a film thickness of the semiconductor region, thereby enabling downsizing and improvement of reproducibility, of the channel length.

    摘要翻译： 线性MISFET具有弹性，柔性并且能够制造成任意形状的集成电路。 通常，结构包括平行布置的源极区域和漏极区域。 然而，由于用于确定其电特性的MISFET的沟道长度由圆柱形栅极绝缘区域上的源极区域和漏极区域之间的距离决定，所以难以缩小沟道长度或提高其再现性。 本MISFET包括用作介于源极区域和漏极之间的沟道区域的半导体区域。 通过栅极绝缘区域对半导体区域施加控制电压，控制在源极区域和漏极区域之间流动的电流。 沟道长度由半导体区域的膜厚确定，能够实现通道长度的再现性的小型化和提高。

    Method for producing containing fullerene and apparatus for producing same
    55.
    发明申请
    Method for producing containing fullerene and apparatus for producing same 审中-公开
    含有富勒烯的生产方法及其制造方法

    公开(公告)号：US20060127597A1

    公开(公告)日：2006-06-15

    申请号：US10528561

    申请日：2003-09-22

    申请人： Rikizo Hatakeyama ,  Takamichi Hirata ,  Kuniyoshi Yokoh ,  Yasuhiko Kasama ,  Kenji Omote

    发明人： Rikizo Hatakeyama ,  Takamichi Hirata ,  Kuniyoshi Yokoh ,  Yasuhiko Kasama ,  Kenji Omote

    IPC分类号： H05H1/24 ,  C23C16/00 ,  H01J7/24

    CPC分类号： B82Y30/00 ,  B82Y40/00 ,  C01B32/15 ,  C01B32/152

    摘要： A method for producing endohedral fullerenes at a higher yield and an apparatus therefor are disclosed. The apparatus includes a vacuum vessel (1), elements (3, 4) for generating a plasma current (2) of atoms to be contained, elements (8) for introducing fullerenes into the plasma current (2), a holding member (6) for holding a plurality of division plates (5a, 5b, 5c) concentrically divided and arranged in the downstream region of the plasma current (2), and a bias-applying unit (7a, 7b, 7c) for applying an arbitrary bias voltage to the division plates (5a, 5b, 5c).

    摘要翻译： 公开了一种以更高产率生产内含面富勒烯的方法及其装置。 该设备包括一个真空容器（1），用于产生要包含的原子的等离子体电流（2）的元件（3,4），用于将富勒烯引入等离子体电流（2）的元件（8），保持构件 ），用于保持在所述等离子体电流（2）的下游区域同心分布配置的多个分割板（5a，5b，5c），以及偏压施加单元（7a，7b，5c） 用于将任意的偏置电压施加到分隔板（5a，5b，5c）。

    Solar battery and clothes
    56.
    发明申请
    Solar battery and clothes 审中-公开
    太阳能电池和衣服

    公开(公告)号：US20050224904A1

    公开(公告)日：2005-10-13

    申请号：US10513143

    申请日：2003-05-02

    申请人： Yasuhiko Kasama ,  Satoshi Fujimoto ,  Kenji Omote

    发明人： Yasuhiko Kasama ,  Satoshi Fujimoto ,  Kenji Omote

    IPC分类号： H01L31/00

    CPC分类号： H01L31/04 ,  Y02E10/50

    摘要： A solar battery which is not limited by shape but has plasticity or flexibility and is capable of being formed into an optional shape and whose degree of integration is extremely high is provided. A plurality of line elements in which a cross section having a photoelectromotive force circuit element is formed continuously or intermittently in the longitudinal direction are bundled, twisted, woven, joined, formed in combination or formed in the non-woven state.

    摘要翻译： 一种太阳能电池，其不受形状限制但具有可塑性或柔性，并且能够形成为任选的形状，并且其集成度非常高。 其中具有光电动势电路元件的横截面在纵向上连续或间断地形成的多个线元件被捆扎，扭曲，编织，接合，组合形成或以无纺布状态形成。

    Method for trimming thin-film transistor array
    57.
    发明授权
    Method for trimming thin-film transistor array 失效
    薄膜晶体管阵列的修整方法

    公开(公告)号：US4786780A

    公开(公告)日：1988-11-22

    申请号：US160533

    申请日：1988-02-26

    申请人： Kazuya Oakabe ,  Chisato Iwasaki ,  Hitoshi Seki ,  Yasuhiko Kasama

    发明人： Kazuya Oakabe ,  Chisato Iwasaki ,  Hitoshi Seki ,  Yasuhiko Kasama

    IPC分类号： H01L21/82 ,  G02F1/13 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  H01L21/768 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786 ,  B23K26/00

    CPC分类号： H01L21/76886 ,  G02F1/136259 ,  G02F2001/136263

    摘要： A thin-film transistor array is constructed of at least a first thin-film transistor and a second thin-film transistor connected in parallel with the first thin-film transistor. These transistors are formed on a substrate under the condition that a source bus and a gate bus are connected to these transistors with forming a crossover portion. These parallel-connected transistors drive one pixel of a liquid crystal element. The first and second thin-film transistors are independently positioned in a symmetrically positional relationship with sandwiching the gate and source buses. In accordance with a laser trimming method of the invention, either gate bus or source bus located at one side of the crossover portion is first cut out so as to electrically disconnect the normally operable thin-film transistor from the array.

    摘要翻译： 薄膜晶体管阵列由与第一薄膜晶体管并联连接的至少第一薄膜晶体管和第二薄膜晶体管构成。 在源极总线和栅极总线与形成交叉部分的这些晶体管连接的条件下，在基板上形成这些晶体管。 这些并联连接的晶体管驱动液晶元件的一个像素。 第一和第二薄膜晶体管独立地以对称位置关系定位，夹着栅极和源极总线。 根据本发明的激光修整方法，首先切割位于交叉部分一侧的栅极总线或源极总线，以将正常操作的薄膜晶体管与阵列电断开。

    Light-emitting element and light-emitting device
    59.
    发明授权
    Light-emitting element and light-emitting device 有权
    发光元件和发光元件

    公开(公告)号：US07528541B2

    公开(公告)日：2009-05-05

    申请号：US10563379

    申请日：2004-07-12

    申请人： Yasuhiko Kasama ,  Kenji Omote

    发明人： Yasuhiko Kasama ,  Kenji Omote

    IPC分类号： H05B33/00

    CPC分类号： H01L51/0046 ,  B82Y10/00 ,  H01L27/3244 ,  H01L51/002 ,  H01L51/0059 ,  H01L51/0071 ,  H01L51/0081 ,  Y10S428/917

    摘要： Organic materials doped with alkali metal have been conventionally used for electron transport layers or electron injection layers which constitute light-emitting films in organic EL light-emitting elements which are used in display devices or illuminating devices. Such conventional organic materials involve problems such that a strict process control is required since the alkali metal is highly reactive and thus, likely to be formed into a hydroxide, such that the resulting light-emitting element or light-emitting device needs complete sealing, and such that life of the light-emitting element cannot be sufficiently long. The present invention uses an alkali metal-including fullerene or an organic material doped with an alkali metal-including fullerene for electron transport layers or electron injection layers which constitute light-emitting films in organic EL light-emitting elements. The alkali metal-including fullerene or the organic material doped with an alkali metal-including fullerene is not very reactive with moisture or other impurities in the atmosphere and thus, the process control thereof is easy. Furthermore, even with a simple sealing structure, the resulting light-emitting element can be sufficiently long life.

    摘要翻译： 通常使用掺杂有碱金属的有机材料用于在用于显示装置或照明装置的有机EL发光元件中构成发光膜的电子传输层或电子注入层。 这样的常规有机材料存在这样的问题，即由于碱金属反应性高，因此很可能形成氢氧化物，所以需要完全密封所得的发光元件或发光元件，因此需要严格的工艺控制， 使得发光元件的寿命不能足够长。 本发明使用含有碱金属的富勒烯或掺杂有含碱金属的富勒烯的有机材料用于在有机EL发光元件中构成发光膜的电子传输层或电子注入层。 含有碱金属的富勒烯或掺有含碱金属的富勒烯的有机材料与大气中的水分或其他杂质不很好反应，因此其工艺控制容易。 此外，即使采用简单的密封结构，所得的发光元件也可以具有足够的使用寿命。