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公开(公告)号：US06650062B2
公开(公告)日：2003-11-18
申请号：US10082165
申请日：2002-02-26
申请人： Kazunori Inoue , Saburou Morita , Osamu Toyoda , Motonari Kifune
发明人： Kazunori Inoue , Saburou Morita , Osamu Toyoda , Motonari Kifune
IPC分类号： G09G310
摘要： A PDP having a novel cell structure that is superior in light emission efficiency is provided. A conductive film to be display electrodes X and Y is formed on side portions of a wall so that a main surface that contributes to discharge in the display electrode X is disposed so as to be opposed to a main surface of the neighboring display electrode Y via a gas space. A power supplying portion straddling plural cells in the display electrodes X and Y is provided on the upper surface of the wall. The display electrodes X and Y are covered with a dielectric layer that is thin at the side portion and thick at the top portion of the wall.
摘要翻译： 提供具有发光效率优异的新颖的单元结构的PDP。 在壁的侧部形成有用于显示电极X和Y的导电膜，使得有助于显示电极X中的放电的主表面设置成与相邻的显示电极Y的主表面相对经过 一个气体空间。 跨越显示电极X和Y中的多个单元的供电部分设置在壁的上表面上。 显示电极X和Y被覆盖有在侧壁部分较薄并且壁顶部较厚的介电层。
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52.发明授权Gas discharge panel having gas flow barriers and evacuation method thereof 失效气体放电面板，其具有气体流动阻隔层及其排气方法公开(公告)号：US06236159B1
公开(公告)日：2001-05-22
申请号：US09087503
申请日：1998-05-29
IPC分类号： H01J1749
摘要： The gas discharge panel according to the present invention includes a pair of substrates, a plurality of barrier ribs, a sealing member, and two gas flow barriers. One of the substrates has a first vent hole and a second vent hole provided in a peripheral portion thereof for intercommunication between the inside and outside of the panel. The at least two gas flow barriers are provided between the sealing member and the barrier ribs located on opposite sides of an arrangement of the barrier ribs so that a gas introduced from the first vent hole flows through inter-rib spaces defined between adjacent pairs of barrier ribs and is expelled from the second vent hole.
摘要翻译： 根据本发明的气体放电面板包括一对基板，多个隔壁，密封构件和两个气体流动屏障。 一个基板具有设置在其周边部分中的第一通气孔和第二通气孔，用于在面板的内部和外部之间进行相互通信。 所述至少两个气体流动阻挡件设置在所述密封构件和位于所述阻挡肋的排列的相对侧上的所述障壁之间，使得从所述第一通气孔引入的气体流过相邻的隔壁对之间的肋间空间 排出第二排气孔。
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53.发明授权Acoustic wave filter, communication module, and method for manufacturing the filter 有权声波滤波器，通讯模块及滤波器制造方法公开(公告)号：US09054674B2
公开(公告)日：2015-06-09
申请号：US13425001
申请日：2012-03-20
CPC分类号： H03H9/706 , H03H3/02 , H03H3/08 , H03H9/02125 , H03H9/02913 , H03H9/02952 , H03H9/568 , H03H9/6483 , H03H9/725 , Y10T29/49155
摘要： An acoustic wave filter includes: a substrate; resonators that are arranged on the substrate and excite acoustic waves; a ground terminal on the substrate; interconnection lines interconnecting the resonators and connecting predetermined ones of the resonators to the ground terminal; and a shield electrode disposed so as to be close to and face the interconnection lines.
摘要翻译： 声波滤波器包括：基板; 谐振器布置在基板上并激发声波; 衬底上的接地端子; 将所述谐振器互连并将所述谐振器中的预定谐振器连接到所述接地端子的互连线; 以及设置成靠近并面对互连线的屏蔽电极。
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54.发明授权Electronic component, electronic device, and method for manufacturing the electronic component 有权电子部件，电子设备以及电子部件的制造方法公开(公告)号：US08748755B2
公开(公告)日：2014-06-10
申请号：US13419253
申请日：2012-03-13
IPC分类号： H01L23/28
CPC分类号： H03H9/6483 , H01L2224/16 , H01L2224/73204 , H03H9/1064 , Y10T29/49124
摘要： An electronic component includes: a substrate; a functional portion provided on the substrate; an interconnection line provided on the substrate and electrically connected to the functional portion; a metal wall provided on the substrate so as to surround the functional portion and the interconnection line; and a seal portion that contacts the metal wall and covers the functional portion and the interconnection line so as to define a cavity above the functional portion, the seal portion being made of liquid crystal polymer.
摘要翻译： 电子部件包括：基板; 设置在所述基板上的功能部; 布线，设置在所述基板上并与所述功能部电连接; 金属壁，设置在所述基板上，以围绕所述功能部分和所述互连线; 以及密封部分，其与所述金属壁接触并且覆盖所述功能部分和所述互连线以便在所述功能部分上方限定空腔，所述密封部分由液晶聚合物制成。
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公开(公告)号：US08729776B2
公开(公告)日：2014-05-20
申请号：US13556897
申请日：2012-07-24
申请人： Takashi Matsuda , Kazunori Inoue
发明人： Takashi Matsuda , Kazunori Inoue
CPC分类号： H03H9/1071 , H03H9/6483
摘要： An electronic component includes: a substrate; a functional element located on the substrate; a wiring located on the substrate and electrically connected to the functional element; a metal ceiling located above the functional element so that a space is formed between the metal ceiling and the functional element; and a sealing portion located on the metal ceiling, wherein the metal ceiling is electrically connected to a signal wiring that is included in the wiring and transmits a high-frequency signal.
摘要翻译： 电子部件包括：基板; 位于所述基板上的功能元件; 布线，位于所述基板上并电连接到所述功能元件; 位于所述功能元件上方的金属天花板，使得在所述金属天花板和所述功能元件之间形成空间; 以及位于所述金属天花板上的密封部，其中所述金属顶板电连接到包括在所述布线中的信号布线，并且发送高频信号。
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56.发明授权公开(公告)号：US08624244B2
公开(公告)日：2014-01-07
申请号：US13346193
申请日：2012-01-09
申请人： Reiko Noguchi , Kazunori Inoue , Masaru Aoki , Toshihiko Iwasaka
发明人： Reiko Noguchi , Kazunori Inoue , Masaru Aoki , Toshihiko Iwasaka
IPC分类号： H01L29/04 , H01L29/10 , H01L31/036 , H01L31/0376 , H01L31/20 , H01L29/12 , H01L29/76 , H01L31/112 , H01L29/15
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/41733
摘要： A thin film transistor includes a gate electrode, a semiconductor layer, and a source electrode and a drain electrode placed on the semiconductor layer and electrically connected with the semiconductor layer. The semiconductor layer includes a light-transmitting semiconductor film and an ohmic conductive film placed on the light-transmitting semiconductor film and having a lower light transmittance than the light-transmitting semiconductor film. The ohmic conductive film is formed not to protrude from the light-transmitting semiconductor film. The ohmic conductive film is formed in separate parts with a channel part between the source electrode and the drain electrode interposed therebetween. The source electrode and the drain electrode are connected to the light-transmitting semiconductor film through the ohmic conductive film.
摘要翻译： 薄膜晶体管包括栅电极，半导体层以及放置在半导体层上并与半导体层电连接的源电极和漏电极。 半导体层包括透光半导体膜和放置在透光半导体膜上并具有比透光半导体膜低的透光率的欧姆导电膜。 形成欧姆导电膜不会从透光半导体膜突出。 欧姆导电膜以分离的部分形成在源电极和漏电极之间的通道部分之间。 源电极和漏电极通过欧姆导电膜连接到透光半导体膜。
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57.发明申请THIN FILM TRANSISTOR, ACTIVE MATRIX SUBSTRATE, AND MANUFACTURING METHOD THEREOF 有权薄膜晶体管，有源矩阵基板及其制造方法公开(公告)号：US20120187393A1
公开(公告)日：2012-07-26
申请号：US13346193
申请日：2012-01-09
申请人： Reiko NOGUCHI , Kazunori Inoue , Masaru Aoki , Toshihiko Iwasaka
发明人： Reiko NOGUCHI , Kazunori Inoue , Masaru Aoki , Toshihiko Iwasaka
IPC分类号： H01L33/08
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/41733
摘要： A thin film transistor includes a gate electrode, a semiconductor layer, and a source electrode and a drain electrode placed on the semiconductor layer and electrically connected with the semiconductor layer. The semiconductor layer includes a light-transmitting semiconductor film and an ohmic conductive film placed on the light-transmitting semiconductor film and having a lower light transmittance than the light-transmitting semiconductor film. The ohmic conductive film is formed not to protrude from the light-transmitting semiconductor film. The ohmic conductive film is formed in separate parts with a channel part between the source electrode and the drain electrode interposed therebetween. The source electrode and the drain electrode are connected to the light-transmitting semiconductor film through the ohmic conductive film.
摘要翻译： 薄膜晶体管包括栅电极，半导体层以及放置在半导体层上并与半导体层电连接的源电极和漏电极。 半导体层包括透光半导体膜和放置在透光半导体膜上并具有比透光半导体膜低的透光率的欧姆导电膜。 形成欧姆导电膜不会从透光半导体膜突出。 欧姆导电膜以分离的部分形成在源电极和漏电极之间的通道部分之间。 源电极和漏电极通过欧姆导电膜连接到透光半导体膜。
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58.发明授权Acoustic wave element, duplexer, communication module, and communication apparatus 有权声波元件，双工器，通信模块和通信设备公开(公告)号：US08222972B2
公开(公告)日：2012-07-17
申请号：US12712144
申请日：2010-02-24
IPC分类号： H03H9/46
CPC分类号： H03H9/0222 , H03H9/02897 , H03H9/02929 , H03H9/02937 , H03H9/02984 , H03H9/02992 , Y10T29/49005
摘要： An acoustic wave element includes: resonators 2 each including an electrode to excite acoustic waves; a power supply wiring portion 3 that is disposed so as to connect the resonators 2 electrically; a piezoelectric substrate 4 on which the resonators 2 and the power supply wiring portion 3 are formed; a second medium 5 that is formed on the piezoelectric substrate 4 so as to cover the resonators 2; and a third medium 6 that is formed on the piezoelectric substrate 4 so as to cover at least the second medium 5 and the power supply wiring portion 3. A side surface 34 of the power supply wiring portion 3 that is in contact with a surface of the piezoelectric substrate 4 forms an obtuse first angle θ with respect to the surface 4a of the piezoelectric substrate 4.
摘要翻译： 声波元件包括：各自包括用于激发声波的电极的谐振器2; 设置为电连接谐振器2的电源配线部3; 形成有谐振器2和电源配线部3的压电基板4; 形成在压电基板4上以覆盖谐振器2的第二介质5; 以及形成在压电基板4上以至少覆盖第二介质5和电源配线部3的第三介质6.电源配线部3的与表面接触的侧面34 压电基板4形成钝角的第一角度＆amp; 相对于压电基板4的表面4a。
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公开(公告)号：USD661868S1
公开(公告)日：2012-06-19
申请号：US29394154
申请日：2011-06-14
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公开(公告)号：US20110017993A1
公开(公告)日：2011-01-27
申请号：US12831658
申请日：2010-07-07
申请人： Kumi TSUDA , Kazunori Inoue , Masaru Aoki
发明人： Kumi TSUDA , Kazunori Inoue , Masaru Aoki
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/4908 , H01L27/124 , H01L29/41733 , H01L29/42384
摘要： There is provided a TFT substrate including a gate electrode having a thick film part and a thin film part with a smaller film thickness than the thick film part, a semiconductor active film formed above the thick film part and the thin film part of the gate electrode, an ohmic contact film formed on an inside of the semiconductor active film and on the semiconductor active film corresponding to the thin film part on an outside of the thick film part, and an electrode film constituting a source electrode and a drain electrode, having a planar shape identical to or on an inside of the ohmic contact film, and formed on the ohmic contact film.
摘要翻译： 提供了一种TFT基板，包括具有厚膜部分的栅电极和具有比厚膜部分更薄的膜厚度的薄膜部分，形成在厚膜部分上方的半导体活性膜和栅电极的薄膜部分 形成在半导体有源膜的内侧上的半导体有源膜上的欧姆接触膜和对应于厚膜部的外侧的薄膜部的半导体活性膜，以及构成源电极和漏电极的电极膜，具有 平面形状与欧姆接触膜的内部相同或在其内部，并形成在欧姆接触膜上。
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