公开(公告)号：US20110241486A1

公开(公告)日：2011-10-06

申请号：US13065892

申请日：2011-03-31

申请人： Akihiro Iino ,  Yukio Akiyama ,  Satoshi Sakai ,  Takuo Oosaki ,  Masakazu Hirabayashi ,  Masatomo Moriko

发明人： Akihiro Iino ,  Yukio Akiyama ,  Satoshi Sakai ,  Takuo Oosaki ,  Masakazu Hirabayashi ,  Masatomo Moriko

IPC分类号： H02N2/12

CPC分类号： H02N2/12 ,  G04C3/12 ,  H02N2/166

摘要： An ultrasonic motor which exhibits stable performances by suppressing irregularities of magnitudes of two standing waves excited by a piezoelectric element is provided. The ultrasonic motor is provided with a piezoelectric element which includes: a plurality of divided electrodes which are mounted on one surface and are equidistantly arranged in the circumferential direction; an inner peripheral electrode which is arranged on an inner peripheral side of the divided electrodes; an outer peripheral electrode which is arranged on an outer peripheral side of the divided electrodes; a plurality of inner peripheral short-circuiting electrodes which are mounted on every other divided electrode out of the divided electrodes and on the inner peripheral electrode so as to make every other divided electrode short-circuited with the inner peripheral electrode in the radial direction of the piezoelectric element; a plurality of outer peripheral short-circuiting electrodes which are mounted on the divided electrodes which are not short-circuited with the inner peripheral electrodes out of the divided electrodes and on the outer peripheral electrode so as to make the divided electrodes which are not short-circuited with the inner peripheral electrode short-circuited with the outer peripheral electrode in the radial direction of the piezoelectric element.

摘要翻译： 提供了通过抑制由压电元件激发的两个驻波的大小的不规则性而表现出稳定的性能的超声波马达。 超声波马达设置有压电元件，该压电元件包括​​：多个分隔电极，其安装在一个表面上并沿圆周方向等距布置; 配置在分割电极的内周侧的内周电极; 外周电极，其设置在所述分割电极的外周侧; 多个内周短路电极，分别安装在分割电极之间的每隔一个分割电极和内周电极上，以使每隔一个分隔电极与内周电极沿径向方向短路 压电元件 多个外周短路电极，其安装在分割电极上，其与分隔电极之间的内周电极没有短路，并且在外周电极上，使得不短路的分割电极， 与外周电极在压电元件的径向方向上与外周电极短路的内周电极环绕。

公开(公告)号：US20110238364A1

公开(公告)日：2011-09-29

申请号：US13065668

申请日：2011-03-25

申请人： Satoshi Sakai ,  Kazuo Kato ,  Keisuke Tsubata ,  Yoshinori Sugai ,  Tomohiro Ihashi ,  Hisao Nakamura ,  Eriko Noguchi ,  Akira Takakura

发明人： Satoshi Sakai ,  Kazuo Kato ,  Keisuke Tsubata ,  Yoshinori Sugai ,  Tomohiro Ihashi ,  Hisao Nakamura ,  Eriko Noguchi ,  Akira Takakura

IPC分类号： G06F15/00

CPC分类号： G01C22/006

摘要： A calculation unit calculates a magnitude of acceleration in at least one of three separate directions and calculates a synthesized value indicating the magnitudes of the accelerations in the three directions based on the calculated magnitude of the acceleration and the acceleration in the direction separate from at least one of the directions.

摘要翻译： 计算单元计算三个独立方向中的至少一个方向的加速度的大小，并且基于计算出的加速度的大小和与至少一个方向分开的方向的加速度来计算指示三个方向上的加速度的大小的合成值 的方向。

公开(公告)号：US20110037134A1

公开(公告)日：2011-02-17

申请号：US12842220

申请日：2010-07-23

申请人： Shinya SUGINO ,  Satoshi Sakai ,  Yusuke Nonaka ,  Tomohiro Saito ,  Tomoyasu Furukawa ,  Hiroyuki Hayashi

发明人： Shinya SUGINO ,  Satoshi Sakai ,  Yusuke Nonaka ,  Tomohiro Saito ,  Tomoyasu Furukawa ,  Hiroyuki Hayashi

IPC分类号： H01L31/0232 ,  H01L31/02

CPC分类号： H01L27/14605 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a solid-state image sensor device, the efficiency of light collection to a light-receiving region of a photodiode PD through a microlens is enhanced by arranging a wiring line configuration. Each of the first metal layer and the second metal layer is arranged to have a ring-like portion formed along a profile of the light-receiving region of the photodiode PD in a fashion that an upper position over the photodiode PD is surrounded by the first and second metal layers and a third metal layer.

摘要翻译： 在固态图像传感器装置中，通过布置布线配置来增强通过微透镜对光电二极管PD的光接收区域的光采集效率。 第一金属层和第二金属层中的每一个被布置成具有沿着光电二极管PD的光接收区域的轮廓形成的环状部分，其方式是光电二极管PD上的上部位置被第一 和第二金属层和第三金属层。

公开(公告)号：US20100177326A1

公开(公告)日：2010-07-15

申请号：US12517110

申请日：2007-10-31

申请人： Satoshi Sakai ,  Yoichiro Tsumura ,  Masami Iida ,  Kohei Kawazoe

发明人： Satoshi Sakai ,  Yoichiro Tsumura ,  Masami Iida ,  Kohei Kawazoe

IPC分类号： G01B11/06

CPC分类号： G01B11/06 ,  G01B11/0625 ,  H01L31/206 ,  Y02E10/50 ,  Y02P70/521

摘要： Objects are to reduce the burden on an operator and to improve fabrication efficiency. A transparent conductive film or a transparent optical film formed on a substrate W is irradiated with line illumination light by means of a line illumination device 3, line reflected light reflected at the transparent conductive film or the transparent optical film is detected with a camera, a color evaluation value of the detected reflected light is measured, and a film thickness corresponding to the measured color evaluation value is obtained using a film-thickness characteristic in which the color evaluation value is associated with the film thickness.

摘要翻译： 对象是减轻操作员的负担并提高制造效率。 利用线照明装置3照射在基板W上形成的透明导电膜或透明光学膜，利用照相机检测在透明导电膜或透明光学膜反射的线反射光， 测定检测出的反射光的颜色评价值，使用色彩评价值与膜厚相关联的膜厚特性，求出与测定色彩评价值对应的膜厚。

公开(公告)号：US20100093936A1

公开(公告)日：2010-04-15

申请号：US12520154

申请日：2007-12-19

申请人： Shyuji Kubota ,  Satoshi Sakai

发明人： Shyuji Kubota ,  Satoshi Sakai

IPC分类号： C08L77/00

CPC分类号： C08L77/00 ,  C08K3/013 ,  C08L23/26 ,  C08L51/06 ,  C08L2205/02 ,  E05B15/1635 ,  E05B17/0004 ,  E05C17/203 ,  C08L2666/20 ,  C08L2666/06 ,  C08L2666/02 ,  C08L2666/24

摘要： The invention provides a crystalline polyamide-type resin composition comprises (a) a crystalline polyamide resin composition comprising (i) 50 to 90% by weight of crystalline polyamide resin (A) having a relative viscosity in 96% sulfuric acid of not less than 3.5 and (ii) 50 to 10% by weight of a crystalline polyamide resin (B) having a melting point lower than the melting point of polyamide resin (A) by 20° C. or more and a relative viscosity dissolved in 96% sulfuric acid of not more than 3.6, and (b) 1 to 10 part(s) by weight of a modified polyolefin resin (C) having a reactive functional group being able to react with the terminal group and/or main-chain amide group of the polyamide resin. The invention also provides a door checker for automobiles prepared from the crystalline polyamide-type resin composition.

摘要翻译： 本发明提供一种结晶性聚酰胺型树脂组合物，其包含（a）结晶性聚酰胺树脂组合物，其包含（i）50〜90重量％的结晶性聚酰胺树脂（A），其相对粘度在96％以上的硫酸中不小于3.5 和（ii）50〜10重量％的熔点低于聚酰胺树脂（A）的熔点20℃以上的结晶性聚酰胺树脂（B）和溶解在96％硫酸中的相对粘度 为3.6以下，（b）1〜10重量份的具有反应性官能团的改性聚烯烃树脂（C）能够与末端基和/或主链酰胺基反应 聚酰胺树脂。 本发明还提供了一种由结晶聚酰胺型树脂组合物制备的汽车门检查器。

公开(公告)号：US07662696B2

公开(公告)日：2010-02-16

申请号：US11690521

申请日：2007-03-23

申请人： Atsushi Hiraiwa ,  Satoshi Sakai ,  Dai Ishikawa ,  Yoshihiro Ikeda

发明人： Atsushi Hiraiwa ,  Satoshi Sakai ,  Dai Ishikawa ,  Yoshihiro Ikeda

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28273 ,  H01L21/3105 ,  H01L21/823857 ,  H01L27/105 ,  H01L27/11521 ,  H01L27/11526 ,  H01L29/513 ,  H01L29/518 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to the present invention, an oxide film with the film quality almost equivalent to that of the thermal oxide can be formed by the low-temperature treatment. After removing an insulator on the active region of the substrate which constitutes a semiconductor wafer, an insulator made of, for example, silicon oxide is deposited on the main surface of the semiconductor wafer by the low pressure CVD method. This insulator is a film to form a gate insulator of MISFET in a later step. Subsequently, a plasma treatment is performed in an atmosphere containing oxygen (oxygen plasma treatment) to the insulator in the manner as schematically shown by the arrows. By so doing, the film quality of the insulator formed by the CVD method can be improved to the extent almost equivalent to that of the insulator formed of the thermal oxide.

摘要翻译： 根据本发明，可以通过低温处理形成膜质量几乎等于热氧化物的氧化膜。 在构成半导体晶片的基板的有源区域上去除绝缘体之后，通过低压CVD法在半导体晶片的主表面上沉积由例如氧化硅制成的绝缘体。 该绝缘体是在后续步骤中形成MISFET的栅极绝缘体的膜。 随后，按照箭头示意性地示出的方式，在含有氧的气氛（氧等离子体处理）中对绝缘体进行等离子体处理。 通过这样做，通过CVD方法形成的绝缘体的膜质量可以提高到与由热氧化物形成的绝缘体几乎相同的程度。

公开(公告)号：US20090288602A1

公开(公告)日：2009-11-26

申请号：US12087071

申请日：2007-03-20

申请人： Kouji Satake ,  Satoshi Sakai ,  Atsuhiro Iyomasa ,  Toshiya Watanabe ,  Hideo Yamakoshi ,  Toshiaki Monaka

发明人： Kouji Satake ,  Satoshi Sakai ,  Atsuhiro Iyomasa ,  Toshiya Watanabe ,  Hideo Yamakoshi ,  Toshiaki Monaka

IPC分类号： C23C16/54

CPC分类号： H01J37/32541 ,  C23C16/4412 ,  C23C16/45578 ,  C23C16/509 ,  H01J37/3244 ,  H05H1/46 ,  H05H2001/466

摘要： An electrode and a vacuum processing apparatus are provided that are capable of improving the film deposition rate and the uniformity of the distribution of the deposited film. The electrode includes a plurality of electrodes (17A, 17B) extending from positions arranged at a predetermined interval along a surface of a substrate to be processed (3). Buffer chambers (25) each extend along and between two of the plurality of electrodes (17A, 17B). A plurality of first gas injection holes (27) are arranged in the direction in which the electrodes (17A, 17B) extend and which supply a reactant gas into the buffer chamber (25). A second gas injection hole (23) has a slit form extending in the direction in which the electrodes (17A, 17B) extend, and which supplies the reactant gas from the buffer chamber (25) toward the substrate to be processed (3).

摘要翻译： 提供了能够提高成膜速度和沉积膜的分布均匀性的电极和真空处理装置。 电极包括沿着待处理基板（3）的表面以预定间隔布置的位置延伸的多个电极（17A，17B）。 缓冲室（25）各自沿着多个电极（17A，17B）中的两个延伸。 多个第一气体喷射孔（27）沿电极（17A，17B）延伸的方向排列，并将反应气体供应到缓冲室（25）中。 第二气体注入孔（23）具有沿电极（17A，17B）延伸的方向延伸的狭缝形状，并且将缓冲室（25）的反应气体朝向待处理基板（3）供给。

公开(公告)号：US20090027300A1

公开(公告)日：2009-01-29

申请号：US11816393

申请日：2006-02-15

申请人： Toshio Kudo ,  Kazuyuki Kashihara ,  Katsunori Hosotani ,  Satoshi Sakai

发明人： Toshio Kudo ,  Kazuyuki Kashihara ,  Katsunori Hosotani ,  Satoshi Sakai

IPC分类号： H01Q15/14

CPC分类号： H05K9/0003 ,  H01Q15/0013 ,  H05K9/0005 ,  H05K9/0094

摘要： An electromagnetic screen (1) comprises a plurality of antennas (4) each of which reflects an electromagnetic wave having a specific frequency. The plurality of antennas (4) are arranged so as to constitute a pattern. Each of the antennas (4) has three segment-shaped first element parts (4a) and three segment-shaped second element parts (4b). The three first element parts (4a) radially extend from the center of the antenna (4) by substantially the same length such that any two of the three first element parts (4a) form an angle of 120° with each other. Each of the second element parts (4b) are connected to an outer edge of a corresponding one of the first element parts (4a).

摘要翻译： 电磁屏幕（1）包括多个天线（4），每个天线反射具有特定频率的电磁波。 多个天线（4）被布置成构成图案。 每个天线（4）具有三个段状的第一元件部分（4a）和三个段状的第二元件部分（4b）。 三个第一元件部分（4a）从天线（4）的中心径向延伸大致相同的长度，使得三个第一元件部分（4a）中的任何两个彼此形成120°的角度。 每个第二元件部分（4b）连接到第一元件部分（4a）中对应的一个的外边缘。

公开(公告)号：US20070221269A1

公开(公告)日：2007-09-27

申请号：US11585073

申请日：2006-10-24

申请人： Satoshi Sakai ,  Yasuyuki Kobayashi ,  Saneyuki Goya ,  Youji Nakano

发明人： Satoshi Sakai ,  Yasuyuki Kobayashi ,  Saneyuki Goya ,  Youji Nakano

IPC分类号： H01L31/00

CPC分类号： H01L31/056 ,  H01L31/0236 ,  Y02E10/52

摘要： The efficiency of a thin film Si solar battery is improved. Between a back face electrode and a transparent conductive film provided on a front face side of the back face electrode, a refractive index adjustment layer is interposed made from a material that has a lower refractive index than that of the transparent conductive film. For example when the transparent conductive film is GZO, SiO2 is interposed between the transparent conductive film and the back face electrode made from Ag. As a result light that penetrates into and is absorbed at the back face electrode is reduced, and the reflectivity of light at the back face electrode is improved.

摘要翻译： 提高薄膜Si太阳能电池的效率。 在背面电极和设置在背面电极的正面侧的透明导电膜之间，由折射率低于透明导电膜折射率的材料构成折射率调节层。 例如，当透明导电膜为GZO时，在透明导电膜和由Ag制成的背面电极之间插入SiO 2。 结果，在背面电极中渗入并被吸收的光减少，并且提高了背面电极的光的反射率。

公开(公告)号：US20070190744A1

公开(公告)日：2007-08-16

申请号：US11690521

申请日：2007-03-23

申请人： Atsushi Hiraiwa ,  Satoshi Sakai ,  Dai Ishikawa ,  Yoshihiro Ikeda

发明人： Atsushi Hiraiwa ,  Satoshi Sakai ,  Dai Ishikawa ,  Yoshihiro Ikeda

IPC分类号： H01L21/76

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28273 ,  H01L21/3105 ,  H01L21/823857 ,  H01L27/105 ,  H01L27/11521 ,  H01L27/11526 ,  H01L29/513 ,  H01L29/518 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to the present invention, an oxide film with the film quality almost equivalent to that of the thermal oxide can be formed by the low-temperature treatment. After removing an insulator on the active region of the substrate which constitutes a semiconductor wafer, an insulator made of, for example, silicon oxide is deposited on the main surface of the semiconductor wafer by the low pressure CVD method. This insulator is a film to form a gate insulator of MISFET in a later step. Subsequently, a plasma treatment is performed in an atmosphere containing oxygen (oxygen plasma treatment) to the insulator in the manner as schematically shown by the arrows. By so doing, the film quality of the insulator formed by the CVD method can be improved to the extent almost equivalent to that of the insulator formed of the thermal oxide.

摘要翻译： 根据本发明，可以通过低温处理形成膜质量几乎等于热氧化物的氧化膜。 在构成半导体晶片的基板的有源区域上去除绝缘体之后，通过低压CVD法在半导体晶片的主表面上沉积由例如氧化硅制成的绝缘体。 该绝缘体是在后续步骤中形成MISFET的栅极绝缘体的膜。 随后，按照箭头示意性地示出的方式，在含有氧的气氛（氧等离子体处理）中对绝缘体进行等离子体处理。 通过这样做，通过CVD方法形成的绝缘体的膜质量可以提高到与由热氧化物形成的绝缘体几乎相同的程度。