公开(公告)号：US08841265B2

公开(公告)日：2014-09-23

申请号：US12344682

申请日：2008-12-29

申请人： Pui-Kwong Chan ,  May Sung Mak ,  Yun Wang

发明人： Pui-Kwong Chan ,  May Sung Mak ,  Yun Wang

IPC分类号： A61K31/575 ,  C07J9/00 ,  C07H15/256 ,  C07C13/62

CPC分类号： A61K31/575 ,  A61K31/7012 ,  A61K31/704 ,  A61K36/77 ,  C07C2603/52 ,  C07H15/24 ,  C07H15/256 ,  C07J9/00

摘要： This invention provides a composition comprising a triterpenoid saponin, comprising two side groups attached to carbons 21, and 22 of the triterpenoid saponin backbone, for inhibiting skin or ovarian tumor cell growth.

摘要翻译： 本发明提供一种组合物，其包含三萜皂苷，其包含连接于碳三烯酮皂苷骨架的碳21和22的两个侧基，用于抑制皮肤或卵巢肿瘤细胞生长。

公开(公告)号：US08791445B2

公开(公告)日：2014-07-29

申请号：US13409436

申请日：2012-03-01

申请人： Randall Higuchi ,  Tony P. Chiang ,  Ryan Clarke ,  Vidyut Gopal ,  Imran Hashim ,  Robert Huertas ,  Yun Wang

发明人： Randall Higuchi ,  Tony P. Chiang ,  Ryan Clarke ,  Vidyut Gopal ,  Imran Hashim ,  Robert Huertas ,  Yun Wang

IPC分类号： H01L45/00 ,  H01L21/62

CPC分类号： H01L45/08 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1633

摘要： A nonvolatile resistive memory element includes a host oxide formed from an interfacial oxide layer. The interfacial oxide layer is formed on the surface of a deposited electrode layer via in situ or post-deposition surface oxidation treatments.

摘要翻译： 非易失性电阻性存储元件包括由界面氧化物层形成的主体氧化物。 界面氧化物层通过原位或沉积后表面氧化处理形成在沉积电极层的表面上。

公开(公告)号：US08787066B2

公开(公告)日：2014-07-22

申请号：US13281777

申请日：2011-10-26

申请人： Yun Wang ,  Tony Chiang ,  Imran Hashim ,  Vidyut Gopal

发明人： Yun Wang ,  Tony Chiang ,  Imran Hashim ,  Vidyut Gopal

IPC分类号： G11C11/00

CPC分类号： H01L45/06 ,  H01L45/065 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1641

摘要： Methods for producing RRAM resistive switching elements having optimal switching behavior include crystalline phase structural changes. Structural changes indicative of optimal switching behavior include hafnium oxide phases in an interfacial region between a resistive switching layer and an electrode.

摘要翻译： 具有最佳切换行为的RRAM电阻式开关元件的制造方法包括晶相结构变化。 指示最佳切换行为的结构变化包括在电阻式开关层和电极之间的界面区域中的氧化铪相。

公开(公告)号：US08698119B2

公开(公告)日：2014-04-15

申请号：US13354006

申请日：2012-01-19

申请人： Mihir Tendulkar ,  Imran Hashim ,  Yun Wang

发明人： Mihir Tendulkar ,  Imran Hashim ,  Yun Wang

IPC分类号： H01L29/04 ,  H01L47/00 ,  H01L21/20 ,  G11C11/00

CPC分类号： H01L45/08 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1616

摘要： Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. The electrical properties of the current limiting component are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element of the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel oxide that is a current limiting material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players.

摘要翻译： 本发明的实施例通常包括形成非易失性存储器件的方法，该非易失性存储器件包含由于添加限定在其中的限流部件的添加而具有改进的器件切换性能和寿命的电阻式开关存储元件。 限流部件的电气特性被配置为在逻辑状态编程步骤期间通过在非易失性存储器件的电阻式开关存储器元件中添加固定串联电阻来降低通过可变电阻层的电流。 在一个实施例中，限流部件包括隧道氧化物，隧道氧化物是设置在非易失性电阻式开关存储器件中的电阻式开关存储器元件内的限流材料。 通常，电阻式开关存储器元件可以形成为可用于各种电子设备（例如数码相机，移动电话，手持式计算机和音乐播放器）的大容量非易失性存储器集成电路的一部分。

公开(公告)号：US08686386B2

公开(公告)日：2014-04-01

申请号：US13399815

申请日：2012-02-17

申请人： Mihir Tendulkar ,  Imran Hashim ,  Yun Wang

发明人： Mihir Tendulkar ,  Imran Hashim ,  Yun Wang

IPC分类号： H01L29/02 ,  H01L47/00 ,  H01L29/04 ,  H01L29/06

CPC分类号： H01L45/1608 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1616

摘要： Embodiments of the invention include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. The electrical properties of the current limiting component are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element of the nonvolatile memory device. In some embodiments, the current limiting component comprises a varistor that is a current limiting material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players.

摘要翻译： 本发明的实施例包括一种形成非易失性存储器件的方法，该非易失性存储器件包含由于添加设置在其中的限流部件而具有改进的器件切换性能和寿命的电阻式开关存储元件。 限流部件的电气特性被配置为在逻辑状态编程步骤期间通过在非易失性存储器件的电阻式开关存储器元件中添加固定串联电阻来降低通过可变电阻层的电流。 在一些实施例中，限流部件包括变阻器，其是设置在非易失性电阻式开关存储器件中的电阻式开关存储器元件内的限流材料。 通常，电阻式开关存储器元件可以形成为可用于各种电子设备（例如数码相机，移动电话，手持式计算机和音乐播放器）的大容量非易失性存储器集成电路的一部分。

公开(公告)号：US08645951B2

公开(公告)日：2014-02-04

申请号：US13327852

申请日：2011-12-16

申请人： Yun Wang ,  Yaozu Dong

发明人： Yun Wang ,  Yaozu Dong

IPC分类号： G06F9/455 ,  G06F12/00 ,  G06F9/00

CPC分类号： G06F9/45545 ,  G06F9/45554 ,  G06F9/45558 ,  G06F9/5077 ,  G06F12/0246 ,  G06F12/1036 ,  G06F12/109

摘要： Machine-readable media, methods, apparatus and system are described. In some embodiments, a virtual machine monitor of a computer platform may comprise a service virtual machine created by the virtual machine monitor partitioning an underlying hardware machine to support execution of a plurality of overlying guest operating systems, wherein the plurality of guest operating systems comprise a guest operating system complying with a non-native guest system architecture different from a host system architecture with which the hardware machine complies. The service virtual machine may further comprise a translation layer to translate instructions from the guest operating system complying with the non-native guest system architecture into instructions complying with the host system architecture.

摘要翻译： 描述了机器可读介质，方法，装置和系统。 在一些实施例中，计算机平台的虚拟机监视器可以包括由虚拟机监视器创建的服务虚拟机，该虚拟机监视器划分底层硬件机器以支持多个重叠的客户操作系统的执行，其中多个客户操作系统包括 符合非本地客户机系统架构的客户机操作系统与硬件机器符合的主机系统架构不同。 服务虚拟机还可以包括翻译层，以将符合非本地客户系统体系结构的来宾操作系统的指令转换为符合主机系统体系结构的指令。

公开(公告)号：US20130306271A1

公开(公告)日：2013-11-21

申请号：US13518846

申请日：2012-05-24

申请人： Shaoxin Yu ,  Song Xiao ,  Yun Wang

发明人： Shaoxin Yu ,  Song Xiao ,  Yun Wang

IPC分类号： F28D15/00

CPC分类号： F28D7/0008 ,  F28D2021/0038

摘要： The present invention provides a blowing device and a method of using the blowing device. The a blowing device comprises a heat generating device, a first chamber having an inlet and an outlet embodied as a slit. A second and third chamber is arranged in juxtapose with the sides of the first chamber. And wherein the second and third chambers are heated by the heat generating device. With the arranged provided above, the blowing device can be prevented from condensed droplets on its surfaces so as to prevent the droplets reentered into the air flow blowing across a surface of an object.

摘要翻译： 本发明提供一种吹风装置和使用吹风装置的方法。 吹风装置包括发热装置，具有入口和出口的第一室，其实施为狭缝。 第二和第三室与第一室的侧面并置布置。 并且其中第二和第三室由发热装置加热。 通过上述设置，可以防止吹风装置在其表面上凝结的液滴，以防止液滴重新进入气流吹过物体的表面。

公开(公告)号：US08580584B2

公开(公告)日：2013-11-12

申请号：US13624102

申请日：2012-09-21

申请人： Yun Wang ,  Tony P. Chiang ,  Chi-I Lang

发明人： Yun Wang ,  Tony P. Chiang ,  Chi-I Lang

IPC分类号： H01L21/00

CPC分类号： H01L51/0031 ,  H01L51/56

摘要： A system and method of increasing productivity of OLED material screening includes providing a substrate that includes an organic semiconductor, processing regions on the substrate by combinatorially varying parameters associated with the OLED device production on the substrate, performing a first characterization test on the processed regions on the substrate to generate first results, processing regions on the substrate in a combinatorial manner by varying parameters associated with the OLED device production on the substrate based on the first results of the first characterization test, performing a second characterization test on the processed regions on the substrate to generate second results, and determining whether the substrate meets a predetermined quality threshold based on the second results.

摘要翻译： 提高OLED材料筛选的生产率的系统和方法包括提供包括有机半导体的衬底，通过组合地改变与衬底上的OLED器件生产相关的参数来在衬底上处理区域，对处理的区域进行第一表征测试 所述衬底产生第一结果，基于所述第一表征测试的第一结果，通过改变与所述衬底上的OLED器件生产相关联的参数，以组合方式处理所述衬底上的区域，对所述衬底上的所述处理区域进行第二特性测试 衬底以产生第二结果，以及基于第二结果确定衬底是否满足预定质量阈值。

公开(公告)号：US20130200325A1

公开(公告)日：2013-08-08

申请号：US13368118

申请日：2012-02-07

申请人： Mihir Tendulkar ,  Yun Wang

发明人： Mihir Tendulkar ,  Yun Wang

IPC分类号： H01L45/00

CPC分类号： H01L45/1608 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2013/0078 ,  G11C2213/15 ,  G11C2213/32 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1616

摘要： Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has an improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. In one embodiment, the current limiting component comprises a resistive material that is configured to improve the switching performance and lifetime of the resistive switching memory element. The electrical properties of the current limiting layer are configured to lower the current flow through the variable resistance layer during the logic state programming steps (i.e., “set” and “reset” steps) by adding a fixed series resistance in the resistive switching memory element found in the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel nitride that is a current limiting material that is disposed within a resistive switching memory element in a nonvolatile resistive switching memory device.

摘要翻译： 本发明的实施例通常包括一种形成非易失性存储器件的方法，该非易失性存储器件包含由于添加限定在其中的限流部件而具有改进的器件切换性能和寿命的电阻式开关存储元件。 在一个实施例中，限流部件包括被配置为改善电阻式开关存储器元件的开关性能和寿命的电阻材料。 电流限制层的电性能被配置为通过在电阻式开关存储元件中增加固定串联电阻来在逻辑状态编程步骤（即，“设置”和“复位”步骤）期间降低通过可变电阻层的电流 存在于非易失性存储器件中。 在一个实施例中，限流部件包括隧道氮化物，其是限制在非易失性电阻式开关存储器件中的电阻式开关存储器元件内的限流材料。

公开(公告)号：US20130196455A1

公开(公告)日：2013-08-01

申请号：US13359936

申请日：2012-01-27

申请人： Xiaohua Shen ,  Yun Wang ,  Xiaoru Wang

发明人： Xiaohua Shen ,  Yun Wang ,  Xiaoru Wang

IPC分类号： H01L21/66 ,  H05B1/00 ,  H01L21/263

CPC分类号： H01L21/2636 ,  B23K26/0608 ,  B23K26/0732 ,  B23K26/08 ,  B23K2101/40 ,  G01N21/55 ,  H01L21/268 ,  H01L21/324 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： Systems and methods are disclosed for performing laser annealing in a manner that reduces or minimizes wafer surface temperature variations during the laser annealing process. The systems and methods include annealing the wafer surface with first and second laser beams that represent preheat and anneal laser beams having respective first and second intensities. The preheat laser beam brings the wafer surface temperate close to the annealing temperature and the anneal laser beam brings the wafer surface temperature up to the annealing temperature. The anneal laser beam can have a different wavelength, or the same wavelength but different orientation relative to the wafer surface. Reflectivity maps of the wafer surface at the preheat and anneal wavelengths are measured and used to select first and second intensities that ensure good anneal temperature uniformity as a function of wafer position.

摘要翻译： 公开了以在减少或最小化激光退火过程中的晶片表面温度变化的方式进行激光退火的系统和方法。 这些系统和方法包括用表示具有相应的第一和第二强度的预热和退火激光束的第一和第二激光束退火晶片表面。 预热激光束使晶片表面温度接近退火温度，退火激光束使晶片表面温度达到退火温度。 退火激光束可以具有相对于晶片表面的不同波长或相同波长但不同的取向。 在预热和退火波长处的晶片表面的反射率图被测量并用于选择第一和第二强度，其确保作为晶片位置的函数的良好的退火温度均匀性。