公开(公告)号：US09490128B2

公开(公告)日：2016-11-08

申请号：US13595873

申请日：2012-08-27

申请人： Yun Wang ,  Andrew M. Hawryluk ,  Xiaoru Wang ,  Xiaohua Shen

发明人： Yun Wang ,  Andrew M. Hawryluk ,  Xiaoru Wang ,  Xiaohua Shen

IPC分类号： H01L21/268 ,  H01L27/146 ,  H01L21/02 ,  H01L21/285

CPC分类号： H01L21/268 ,  H01L21/02107 ,  H01L21/28518 ,  H01L27/14634 ,  H01L27/1469

摘要： Methods of annealing a thin semiconductor wafer are disclosed. The methods allow for high-temperature annealing of one side of a thin semiconductor wafer without damaging or overheating heat-sensitive electronic device features that are either on the other side of the wafer or embedded within the wafer. The annealing is performed at a temperature below the melting point of the wafer so that no significant dopant redistribution occurs during the annealing process. The methods can be applied to activating dopants or to forming ohmic contacts.

摘要翻译： 公开了薄半导体晶片的退火方法。 该方法允许对薄半导体晶片的一侧进行高温退火，而不会损坏或过热晶片另一侧或嵌入晶片内的热敏电子器件特征。 在低于晶片的熔点的温度下进行退火，使得在退火过程中不会发生显着的掺杂剂再分布。 该方法可用于活化掺杂剂或形成欧姆接触。

公开(公告)号：US20130196455A1

公开(公告)日：2013-08-01

申请号：US13359936

申请日：2012-01-27

申请人： Xiaohua Shen ,  Yun Wang ,  Xiaoru Wang

发明人： Xiaohua Shen ,  Yun Wang ,  Xiaoru Wang

IPC分类号： H01L21/66 ,  H05B1/00 ,  H01L21/263

CPC分类号： H01L21/2636 ,  B23K26/0608 ,  B23K26/0732 ,  B23K26/08 ,  B23K2101/40 ,  G01N21/55 ,  H01L21/268 ,  H01L21/324 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： Systems and methods are disclosed for performing laser annealing in a manner that reduces or minimizes wafer surface temperature variations during the laser annealing process. The systems and methods include annealing the wafer surface with first and second laser beams that represent preheat and anneal laser beams having respective first and second intensities. The preheat laser beam brings the wafer surface temperate close to the annealing temperature and the anneal laser beam brings the wafer surface temperature up to the annealing temperature. The anneal laser beam can have a different wavelength, or the same wavelength but different orientation relative to the wafer surface. Reflectivity maps of the wafer surface at the preheat and anneal wavelengths are measured and used to select first and second intensities that ensure good anneal temperature uniformity as a function of wafer position.

摘要翻译： 公开了以在减少或最小化激光退火过程中的晶片表面温度变化的方式进行激光退火的系统和方法。 这些系统和方法包括用表示具有相应的第一和第二强度的预热和退火激光束的第一和第二激光束退火晶片表面。 预热激光束使晶片表面温度接近退火温度，退火激光束使晶片表面温度达到退火温度。 退火激光束可以具有相对于晶片表面的不同波长或相同波长但不同的取向。 在预热和退火波长处的晶片表面的反射率图被测量并用于选择第一和第二强度，其确保作为晶片位置的函数的良好的退火温度均匀性。

公开(公告)号：US20140057457A1

公开(公告)日：2014-02-27

申请号：US13595873

申请日：2012-08-27

申请人： Yun Wang ,  Andrew M. Hawryluk ,  Xiaoru Wang ,  Xiaohua Shen

发明人： Yun Wang ,  Andrew M. Hawryluk ,  Xiaoru Wang ,  Xiaohua Shen

IPC分类号： H01L21/268 ,  H01L21/02

CPC分类号： H01L21/268 ,  H01L21/02107 ,  H01L21/28518 ,  H01L27/14634 ,  H01L27/1469

摘要： Methods of annealing a thin semiconductor wafer are disclosed. The methods allow for high-temperature annealing of one side of a thin semiconductor wafer without damaging or overheating heat-sensitive electronic device features that are either on the other side of the wafer or embedded within the wafer. The annealing is performed at a temperature below the melting point of the wafer so that no significant dopant redistribution occurs during the annealing process. The methods can be applied to activating dopants or to forming ohmic contacts.

摘要翻译： 公开了薄半导体晶片的退火方法。 该方法允许薄半导体晶片的一侧进行高温退火，而不会损坏或过热晶片另一侧或嵌入晶片内的热敏电子器件特征。 在低于晶片的熔点的温度下进行退火，使得在退火过程中不会发生显着的掺杂剂再分布。 该方法可用于活化掺杂剂或形成欧姆接触。

公开(公告)号：US08546805B2

公开(公告)日：2013-10-01

申请号：US13359936

申请日：2012-01-27

申请人： Xiaohua Shen ,  Yun Wang ,  Xiaoru Wang

发明人： Xiaohua Shen ,  Yun Wang ,  Xiaoru Wang

IPC分类号： H01L29/04 ,  H01L31/20 ,  H01L31/036 ,  H01L31/0376

CPC分类号： H01L21/2636 ,  B23K26/0608 ,  B23K26/0732 ,  B23K26/08 ,  B23K2101/40 ,  G01N21/55 ,  H01L21/268 ,  H01L21/324 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： Systems and methods are disclosed for performing laser annealing in a manner that reduces or minimizes wafer surface temperature variations during the laser annealing process. The systems and methods include annealing the wafer surface with first and second laser beams that represent preheat and anneal laser beams having respective first and second intensities. The preheat laser beam brings the wafer surface temperate close to the annealing temperature and the anneal laser beam brings the wafer surface temperature up to the annealing temperature. The anneal laser beam can have a different wavelength, or the same wavelength but different orientation relative to the wafer surface. Reflectivity maps of the wafer surface at the preheat and anneal wavelengths are measured and used to select first and second intensities that ensure good anneal temperature uniformity as a function of wafer position.

摘要翻译： 公开了以在减少或最小化激光退火过程中的晶片表面温度变化的方式进行激光退火的系统和方法。 这些系统和方法包括用表示具有相应的第一和第二强度的预热和退火激光束的第一和第二激光束退火晶片表面。 预热激光束使晶片表面温度接近退火温度，退火激光束使晶片表面温度达到退火温度。 退火激光束可以具有相对于晶片表面的不同波长或相同波长但不同的取向。 在预热和退火波长处的晶片表面的反射率图被测量并用于选择第一和第二强度，其确保作为晶片位置的函数的良好的退火温度均匀性。

公开(公告)号：US08779407B2

公开(公告)日：2014-07-15

申请号：US13367662

申请日：2012-02-07

申请人： Hieu Pham ,  Vidyut Gopal ,  Imran Hashim ,  Dipankar Pramanik ,  Yun Wang ,  Hong Sheng Yang

发明人： Hieu Pham ,  Vidyut Gopal ,  Imran Hashim ,  Dipankar Pramanik ,  Yun Wang ,  Hong Sheng Yang

IPC分类号： H01L29/02

CPC分类号： C23C14/345 ,  C23C14/0042 ,  C23C14/0641 ,  C23C14/083 ,  C23C14/225 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1608 ,  H01L45/1616 ,  H01L45/1625

摘要： A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 Ωcm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.

公开(公告)号：US08683420B2

公开(公告)日：2014-03-25

申请号：US12948257

申请日：2010-11-17

申请人： Yun Wang ,  Tony P. Chiang ,  Ryan Clarke ,  Chi-I Lang ,  Yoram Schwarz

发明人： Yun Wang ,  Tony P. Chiang ,  Ryan Clarke ,  Chi-I Lang ,  Yoram Schwarz

IPC分类号： G06F17/50

CPC分类号： H01L22/14

摘要： A method and system of improved reliability testing includes providing a first substrate and a second substrate, each substrate comprising only a first metallization layer; processing regions on a first substrate by combinatorially varying at least one of materials, unit processes, and process sequences; performing a first reliability test on the processed regions on the first substrate to generate first results; processing regions on a second substrate in a combinatorial manner by varying at least one of materials, unit processes, and process sequences based on the first results of the first reliability test; performing a second reliability test on the processed regions on the second substrate to generate second results; and determining whether the first substrate and the second substrate meet a predetermined quality threshold based on the second results.

摘要翻译： 改进的可靠性测试的方法和系统包括提供第一衬底和第二衬底，每个衬底仅包括第一金属化层; 通过组合地改变材料，单元过程和工艺顺序中的至少一个来处理第一衬底上的处理区域; 对所述第一基板上的所述经处理区域进行第一可靠性测试以产生第一结果; 基于第一可靠性测试的第一结果，通过改变材料，单元过程和过程序列中的至少一个来以组合的方式处理第二基板上的区域; 对所述第二基板上的所述经处理区域进行第二可靠性测试以产生第二结果; 以及基于所述第二结果来确定所述第一基板和所述第二基板是否满足预定质量阈值。

公开(公告)号：US08589621B2

公开(公告)日：2013-11-19

申请号：US13192347

申请日：2011-07-27

申请人： Qing F. Wang ,  Yun Wang

发明人： Qing F. Wang ,  Yun Wang

IPC分类号： G06F12/00 ,  G06F13/00 ,  G06F13/28

CPC分类号： G06F9/4493

摘要： There is provided a method and computer system for object persistency that includes: running a program; storing an object of the program into a random access memory in response to determining that the object is a non-persistent object; and storing the object into a phase change memory in response to determining that the object is a persistent object. The method and computer system of the present disclosure do not need separate persistency layers, such that the programming model is light weighted, the persistency of object data is more simple and fast, and implicit transaction process is supported, thereby a great deal of development and runtime costs are saved.

摘要翻译： 提供了一种用于对象持久性的方法和计算机系统，包括：运行程序; 响应于确定所述对象是非持久对象，将所述程序的对象存储到随机存取存储器中; 以及响应于确定所述对象是持久对象而将所述对象存储到相变存储器中。 本公开的方法和计算机系统不需要单独的持久层，使得编程模型轻量化，对象数据的持久性更加简单快速，并且支持隐式事务处理，从而大量开发和 保存运行时费用。

公开(公告)号：US20130270104A1

公开(公告)日：2013-10-17

申请号：US13444100

申请日：2012-04-11

申请人： Hong Sheng Yang ,  Chi-l Lang ,  Yun Wang

发明人： Hong Sheng Yang ,  Chi-l Lang ,  Yun Wang

IPC分类号： C23C14/35

CPC分类号： C23C14/042 ,  C23C14/352 ,  C23C14/548

摘要： Embodiments of the present invention provide methods and apparatuses using sputtering from a mosaic sputtering target for depositing layers onto a substrate, and provide the capability of depositing layers onto site isolated regions of the substrate in a combinatorial manner. A sputtering source is provided including a sputtering target comprising a first region having a first composition, and a second region having a second composition. A selection mechanism is capable of selecting a composition of emitted material from the sputtering source that can range from 0% to 100% of the first composition and from 0% to 100% of the second composition. The selection mechanism can comprise a movable magnetron or a moveable aperture.

摘要翻译： 本发明的实施方案提供了使用来自马赛克溅射靶的溅射的方法和装置，用于将层沉积到衬底上，并提供以组合方式将层沉积到衬底的位置隔离区上的能力。 提供溅射源，其包括溅射靶，其包括具有第一组成的第一区域和具有第二组成的第二区域。 选择机构能够从溅射源选择发射材料的组成，该组成可以在第一组分的0％至100％和第二组合物的0％至100％的范围内。 选择机构可以包括可移动磁控管或可移动孔。

公开(公告)号：US20130134373A1

公开(公告)日：2013-05-30

申请号：US13305568

申请日：2011-11-28

申请人： Yun Wang ,  Imran Hashim ,  Tony Chiang

发明人： Yun Wang ,  Imran Hashim ,  Tony Chiang

IPC分类号： H01L45/00

CPC分类号： G11C13/0007 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147

摘要： A nonvolatile resistive memory element has a novel variable resistance layer comprising one or more rare-earth oxides. The rare-earth oxide has a high k value, a high bandgap energy, and the ability to maintain an amorphous structure after thermal anneal processes. Thus, the novel variable resistance layer facilitates improved switching performance and reliability of the resistive memory element.

摘要翻译： 非易失性电阻存储元件具有包含一种或多种稀土氧化物的新颖的可变电阻层。 稀土氧化物具有高k值，高带隙能，以及热退火工艺后保持非晶结构的能力。 因此，新颖的可变电阻层有助于提高电阻式存储元件的开关性能和可靠性。

公开(公告)号：US20130071984A1

公开(公告)日：2013-03-21

申请号：US13236481

申请日：2011-09-19

申请人： Yun Wang ,  Vidyut Gopal ,  Imran Hashim ,  Dipankar Pramanik ,  Tony Chiang

发明人： Yun Wang ,  Vidyut Gopal ,  Imran Hashim ,  Dipankar Pramanik ,  Tony Chiang

IPC分类号： H01L45/00

CPC分类号： H01L45/146 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1616

摘要： Embodiments of the invention generally relate to nonvolatile memory devices and methods for manufacturing such memory devices. The methods for forming improved memory devices, such as a ReRAM cells, provide optimized, atomic layer deposition (ALD) processes for forming a metal oxide film stack having a metal oxide buffer layer disposed on or over a metal oxide bulk layer. The metal oxide bulk layer contains a metal-rich oxide material and the metal oxide buffer layer contains a metal-poor oxide material. The metal oxide bulk layer is less electrically resistive than the metal oxide buffer layer since the metal oxide bulk layer is less oxidized or more metallic than the metal oxide buffer layer. In one example, the metal oxide bulk layer contains a metal-rich hafnium oxide material and the metal oxide buffer layer contains a metal-poor zirconium oxide material.

摘要翻译： 本发明的实施例一般涉及用于制造这种存储器件的非易失性存储器件和方法。 用于形成改进的存储器件（例如ReRAM单元）的方法提供优化的原子层沉积（ALD）工艺，用于形成金属氧化物膜堆叠，其具有设置在金属氧化物本体层上或其上的金属氧化物缓冲层。 金属氧化物本体层含有富金属氧化物材料，金属氧化物缓冲层含有贫金属氧化物。 由于金属氧化物本体层比金属氧化物缓冲层氧化较少或更金属，所以金属氧化物本体层的电阻小于金属氧化物缓冲层的电阻。 在一个实例中，金属氧化物本体层含有富金属氧化铪材料，金属氧化物缓冲层含有贫金属氧化锆材料。