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公开(公告)号：US20150263269A1
公开(公告)日：2015-09-17
申请号：US14728268
申请日：2015-06-02
Applicant: Micron Technology, Inc.
Inventor： Wayne I. Kinney , Witold Kula , Stephen J. Kramer
CPC classification number: H01L27/222 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/3218 , H01F10/329 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/10
Abstract: Memory cells are disclosed. Magnetic regions within the memory cells include an alternating structure of magnetic sub-regions and coupler sub-regions. The coupler material of the coupler sub-regions antiferromagnetically couples neighboring magnetic sub-regions and effects or encourages a vertical magnetic orientation exhibited by the neighboring magnetic sub-regions. Neighboring magnetic sub-regions, spaced from one another by a coupler sub-region, exhibit oppositely-directed magnetic orientations. The magnetic and coupler sub-regions may each be of a thickness tailored to form the magnetic region in a compact structure. Interference between magnetic dipole fields emitted from the magnetic region on switching of a free region in the memory cell may be reduced or eliminated. Also disclosed are semiconductor device structures, spin torque transfer magnetic random access memory (STT-MRAM) systems, and methods of fabrication.
Abstract translation: 公开了存储单元。 存储单元内的磁性区域包括磁性子区域和耦合器子区域的交替结构。 耦合器子区域的耦合器材料反铁磁耦合相邻磁性子区域并且影响或促进相邻磁性子区域呈现的垂直磁性取向。 通过耦合器子区彼此间隔开的相邻的磁子区域表现出相反方向的磁取向。 磁性和耦合器子区域可以各自具有被调整以在紧凑结构中形成磁性区域的厚度。 可以减少或消除在切换存储单元中的自由区域时从磁性区域发射的磁偶极子场之间的干扰。 还公开了半导体器件结构，自旋扭矩传递磁随机存取存储器（STT-MRAM）系统和制造方法。
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公开(公告)号：US20150137291A1
公开(公告)日：2015-05-21
申请号：US14582826
申请日：2014-12-24
Applicant: Micron Technology, Inc.
Inventor： Witold Kula , Gurtej S. Sandhu , Stephen J. Kramer
CPC classification number: H01L43/08 , G11C11/161 , H01L27/228 , H01L43/02 , H01L43/12
Abstract: Methods of forming magnetic memory cells are disclosed. Magnetic and non-magnetic materials are formed into a primal precursor structure in an initial stress state of essentially no strain, compressive strain, or tensile strain. A stress-compensating material, e.g., a non-sacrificial, conductive material, is formed to be disposed on the primal precursor structure to form a stress-compensated precursor structure in a net beneficial stress state. Thereafter, the stress-compensated precursor structure may be patterned to form a cell core of a memory cell. The net beneficial stress state of the stress-compensated precursor structure lends to formation of one or more magnetic regions, in the cell core, exhibiting a vertical magnetic orientation without deteriorating a magnetic strength of the one or more magnetic regions. Also disclosed are memory cells, memory cell structures, semiconductor device structures, and spin torque transfer magnetic random access memory (STT-MRAM) systems.
Abstract translation: 公开了形成磁存储器单元的方法。 磁性和非磁性材料在基本上没有应变，压缩应变或拉伸应变的初始应力状态下形成原始前体结构。 形成应力补偿材料，例如非牺牲导电材料，以设置在原始前体结构上以在净有益应力状态下形成应力补偿前体结构。 此后，应力补偿前体结构可以被图案化以形成存储单元的单元芯。 应力补偿前体结构的净有益应力状态有助于在电池芯中形成一个或多个磁性区域，呈现垂直磁性取向而不会使一个或多个磁性区域的磁强度恶化。 还公开了存储器单元，存储单元结构，半导体器件结构和自旋转矩传递磁随机存取存储器（STT-MRAM）系统。
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公开(公告)号：US11211554B2
公开(公告)日：2021-12-28
申请号：US16394946
申请日：2019-04-25
Applicant: Micron Technology, Inc.
Inventor： Gurtej S. Sandhu , Witold Kula
Abstract: A magnetic cell includes a free region between an intermediate oxide region (e.g., a tunnel barrier) and a secondary oxide region. Both oxide regions may be configured to induce magnetic anisotropy (“MA”) with the free region, enhancing the MA strength of the free region. A getter material proximate to the secondary oxide region is formulated and configured to remove oxygen from the secondary oxide region, reducing an oxygen concentration and an electrical resistance of the secondary oxide region. Thus, the secondary oxide region contributes only minimally to the electrical resistance of the cell core. Embodiments of the present disclosure therefore enable a high effective magnetoresistance, low resistance area product, and low programming voltage along with the enhanced MA strength. Methods of fabrication, memory arrays, memory systems, and electronic systems are also disclosed.
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公开(公告)号：US11158670B2
公开(公告)日：2021-10-26
申请号：US16796677
申请日：2020-02-20
Applicant: Micron Technology, Inc.
Inventor： Wayne I. Kinney , Witold Kula , Stephen J. Kramer
Abstract: Memory cells are disclosed. Magnetic regions within the memory cells include an alternating structure of magnetic sub-regions and coupler sub-regions. The coupler material of the coupler sub-regions antiferromagnetically couples neighboring magnetic sub-regions and effects or encourages a vertical magnetic orientation exhibited by the neighboring magnetic sub-regions. Neighboring magnetic sub-regions, spaced from one another by a coupler sub-region, exhibit oppositely directed magnetic orientations. The magnetic and coupler sub-regions may each be of a thickness tailored to form the magnetic region in a compact structure. Interference between magnetic dipole fields emitted from the magnetic region on switching of a free region in the memory cell may be reduced or eliminated. Also disclosed are semiconductor device structures, spin torque transfer magnetic random-access memory (STT-MRAM) systems, and methods of fabrication.
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55.发明授权公开(公告)号：US10937654B2
公开(公告)日：2021-03-02
申请号：US16256918
申请日：2019-01-24
Applicant: Micron Technology, Inc.
Inventor： Francois H. Fabreguette , John A. Smythe , Witold Kula
IPC: H01L21/225 , H01L21/306 , H01L21/02 , H01L21/3215 , H01L21/385 , H01L21/324 , H01L21/3115
Abstract: A method of doping a silicon-containing material. The method comprises forming at least one opening in a silicon-containing material and conformally forming a doped germanium material in the at least one opening and adjacent to the silicon-containing material. A dopant of the doped germanium material is transferred into the silicon-containing material. Methods of forming a semiconductor device are also disclosed, as are semiconductor devices comprising a doped silicon-containing material.
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Patent Agency Ranking
56.发明申请公开(公告)号：US20200243339A1
公开(公告)日：2020-07-30
申请号：US16256918
申请日：2019-01-24
Applicant: Micron Technology, Inc.
Inventor： Francois H. Fabreguette , John A. Smythe , Witold Kula
IPC: H01L21/225 , H01L21/02 , H01L21/306
Abstract: A method of doping a silicon-containing material. The method comprises forming at least one opening in a silicon-containing material and conformally forming a doped germanium material in the at least one opening and adjacent to the silicon-containing material. A dopant of the doped germanium material is transferred into the silicon-containing material. Methods of forming a semiconductor device are also disclosed, as are semiconductor devices comprising a doped silicon-containing material.
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公开(公告)号：US10651367B2
公开(公告)日：2020-05-12
申请号：US16202536
申请日：2018-11-28
Applicant: Micron Technology, Inc.
Inventor： Wei Chen , Sunil Murthy , Witold Kula
Abstract: Magnetic memory cells, methods of fabrication, semiconductor device structures, and memory systems are disclosed. A magnetic cell core includes at least one magnetic region (e.g., a free region or a fixed region) configured to exhibit a vertical magnetic orientation, at least one oxide-based region, which may be a tunnel junction region or an oxide capping region, and at least one magnetic interface region, which may comprise or consist of iron (Fe). In some embodiments, the magnetic interface region is spaced from at least one oxide-based region by a magnetic region. The presence of the magnetic interface region enhances the perpendicular magnetic anisotropy (PMA) strength of the magnetic cell core. In some embodiments, the PMA strength may be enhanced more than 50% compared to that of the same magnetic cell core structure lacking the magnetic interface region.
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公开(公告)号：US10586830B2
公开(公告)日：2020-03-10
申请号：US16112125
申请日：2018-08-24
Applicant: Micron Technology, Inc.
Inventor： Wayne I. Kinney , Witold Kula , Stephen J. Kramer
Abstract: Memory cells are disclosed. Magnetic regions within the memory cells include an alternating structure of magnetic sub-regions and coupler sub-regions. The coupler material of the coupler sub-regions antiferromagnetically couples neighboring magnetic sub-regions and effects or encourages a vertical magnetic orientation exhibited by the neighboring magnetic sub-regions. Neighboring magnetic sub-regions, spaced from one another by a coupler sub-region, exhibit oppositely directed magnetic orientations. The magnetic and coupler sub-regions may each be of a thickness tailored to form the magnetic region in a compact structure. Interference between magnetic dipole fields emitted from the magnetic region on switching of a free region in the memory cell may be reduced or eliminated. Also disclosed are semiconductor device structures, spin torque transfer magnetic random-access memory (STT-MRAM) systems, and methods of fabrication.
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59.发明授权公开(公告)号：US09972770B2
公开(公告)日：2018-05-15
申请号：US15194875
申请日：2016-06-28
Applicant: Micron Technology, Inc.
Inventor： Wei Chen , Sunil Murthy , Witold Kula
CPC classification number: H01L43/02 , G11C11/161 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: Magnetic memory cells, methods of fabrication, semiconductor device structures, and memory systems are disclosed. A magnetic cell core includes at least one magnetic region (e.g., a free region or a fixed region) configured to exhibit a vertical magnetic orientation, at least one oxide-based region, which may be a tunnel junction region or an oxide capping region, and at least one magnetic interface region, which may comprise or consist of iron (Fe). In some embodiments, the magnetic interface region is spaced from at least one oxide-based region by a magnetic region. The presence of the magnetic interface region enhances the perpendicular magnetic anisotropy (PMA) strength of the magnetic cell core. In some embodiments, the PMA strength may be enhanced more than 50% compared to that of the same magnetic cell core structure lacking the magnetic interface region.
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公开(公告)号：US20170331032A1
公开(公告)日：2017-11-16
申请号：US15588994
申请日：2017-05-08
Applicant: Micron Technology, Inc.
Inventor： Wei Chen , Witold Kula , Manzar Siddik , Suresh Ramarajan , Jonathan D. Harms
CPC classification number: H01L43/02 , G11C11/161 , H01L27/224 , H01L43/08 , H01L43/10
Abstract: A magnetic tunnel junction comprises a conductive first magnetic electrode comprising magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material, and a non-magnetic tunnel insulator material between the first and second electrodes. The magnetic reference material of the second electrode comprises a synthetic antiferromagnetic construction comprising two spaced magnetic regions one of which is closer to the tunnel insulator material than is the other. The one magnetic region comprises a polarizer region comprising CoxFeyBz where “x” is from 0 to 90, “y” is from 10 to 90, and “z” is from 10 to 50. The CoxFeyBz is directly against the tunnel insulator. A non-magnetic region comprising an Os-containing material is between the two spaced magnetic regions. The other magnetic region comprises a magnetic Co-containing material. Other embodiments are disclosed.
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