Abstract:
A memory device supporting multi-address read operations improves throughput on a bi-directional serial port. The device includes a memory array and an input/output port having an input mode and an output mode. The input/output port has at least one signal line used alternately in both the input and output modes. A controller includes logic configured to execute a multi-address read operation in response to receiving a read command on the input/output port in the input mode, the multi-address read operation including receiving a first address and a second address using the at least one signal line in the input mode before switching to the output mode, switching to the output mode and outputting data identified by the first address using the at least one signal line.
Abstract:
A memory device can include a memory, and an interface to receive a memory command sequence. A message authentication code MAC is provided with the command sequence. Control circuits on the device include a command decoder to decode a received command sequence and to execute an identified memory operation. A message authentication engine includes logic to compute a value of a message authentication code to be matched with the received message authentication code based on the received command sequence and a stored key. The device can store a plurality of keys associated with one or more memory zones in the memory. Logic on the device prevents completion of the memory operation identified by the command sequence if the value computed does not match the received message authentication code.
Abstract:
A memory system has a plurality of memory devices coupled with a hub in discrete and shared port arrangements. A plurality of bus lines connect the plurality of memory devices to the hub, including a first subset of bus lines connected in a point-to-point configuration between the hub and a particular memory device, and a second subset of bus lines connected to all the memory devices in the plurality of memory devices including the particular memory device. Bus operation logic is configured to use the first subset of bus lines in a first operation accessing the particular memory device while simultaneously using the second subset of bus lines in a second operation accessing a different selected memory device of the plurality of memory devices.
Abstract:
A system including a host and a guest device, where the guest device can be implemented on a single packaged integrated circuit or a multichip circuit and have logic to use a physical unclonable function to produce a security key. The device can include logic on the guest to provide the PUF key to the host in a secure manner. The physical unclonable function can use entropy derived from non-volatile memory cells to produce the initial key. Logic is described to disable changes to PUF data, and thereby freeze the key after it is stored in the set.
Abstract:
Methods for protecting data on an integrated circuit including a memory are described. One method includes storing nonvolatile protection codes on the integrated circuit. The nonvolatile protection codes have a first value indicating a protected state or a second value indicating an unprotected state for respective sectors in a plurality of sectors of the memory. The method includes storing volatile protection codes on the integrated circuit. The volatile protection codes have a first value indicating a protected state or a second value indicating an unprotected state for respective sectors in the plurality of sectors. The method includes blocking modification in a particular sector using circuitry on the integrated circuit when the volatile protection code for the particular sector has the first value, else allowing modification in the particular sector, and setting the volatile protection codes to values of the nonvolatile protection codes in an initialization procedure.
Abstract:
A memory device and an operating method thereof are provided. The memory device includes a first memory array, a first row decoder, a first column decoder, a second memory array, a second row decoder and a second column decoder. The first memory array and the second memory array are different type memories and formed in a single memory die of a wafer.
Abstract:
A memory device includes command logic allowing for a command protocol allowing interruption of a first command sequence, such as a page write sequence, and then to proceed directly to receive and decode a second command sequence, such as a read sequence, without latency associated, completing the first command sequence. Also, the command logic is configured to be responsive to a third command sequence after the second command sequence and its associated embedded operation have been completed, which completes the interrupted first command sequence and enables execution of an embedded operation identified by the first command sequence. A memory controller supporting such protocols is described.
Abstract:
An erasing method of a memory device is provided. The memory device includes a memory controller and a memory array having a first memory region and a second memory region. The first memory region and the second memory region share the same well. The erasing method comprising steps of: erasing the first memory region; and selectively programming the second memory region according to an error correction code algorithm.
Abstract:
Methods for protecting data on an integrated circuit including a memory are described. One method includes storing protection codes on the integrated circuit. Each protection code has a first value indicating a protected state and a second value indicating an unprotected state for a corresponding sector in a plurality of sectors of the memory. The method includes storing protection mask codes on the integrated circuit. Each mask code has a first value indicating a masked state or a second value indicating an unmasked state for a corresponding sector in the plurality of sectors. The method includes blocking modification in a particular sector of the memory using circuitry on the integrated circuit when the protection code for the particular sector has the first value and the mask code for the particular sector has the second value, else allowing modification in the particular sector.
Abstract:
A circuit for voltage detection and protection comprises a first block, a first voltage detector, a second block and a second voltage detector. The first block receives a first voltage supply. The first voltage detector detects the first voltage supply and generates a first detecting signal when detecting the first voltage supply level is out of the first operating voltage range. The second block receives a second voltage supply. The second voltage detector detects the second voltage supply and generates a second detecting signal when detecting the second voltage supply level is out of the second operating voltage range. The first block performs a protection operation on the circuit when monitoring at least one of the first and second detecting signals.