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公开(公告)号：USD392272S
公开(公告)日：1998-03-17
申请号：US71275
申请日：1997-05-27
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公开(公告)号：USD391248S
公开(公告)日：1998-02-24
申请号：US71300
申请日：1997-05-27
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公开(公告)号：USD386166S
公开(公告)日：1997-11-11
申请号：US592317
申请日：1990-10-01
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公开(公告)号：US5367626A
公开(公告)日：1994-11-22
申请号：US181874
申请日：1994-01-13
申请人： Makoto Morioka , Masato Ikemori , Kazuo Hattori , Hiroshi Suzuki
发明人： Makoto Morioka , Masato Ikemori , Kazuo Hattori , Hiroshi Suzuki
CPC分类号： G06F3/04817
摘要： To improve user-friendliness, icons selectable by a user are automatically generated by synthesizing more basic graphics. The system for displaying icons according to utilization frequency and to comprehensively express the computer's various modes. An icon pattern memory stores a plurality of graphic elements representing icon patterns which can be combined to generate the icons used in the computer. An icon pattern synthesizer synthesizing icon patterns in the icon pattern memory to generate the icons. An icon utilization controller controls the icon synthesis by the icon pattern synthesizer according to the user's input and monitors the utilization of all icons that can be synthesized by the icon synthesizer. A display controller controls display of a plurality of icons on the display screen of the computer according to the icon utilization, under the control of the icon utilization controller.
摘要翻译： 为了提高用户友好性，用户可选择的图标通过合成更多的基本图形自动生成。 根据利用频率显示图标的系统，全面表达计算机的各种模式。 图标图案存储器存储表示可以组合以生成计算机中使用的图标的图标图案的多个图形元素。 图标图案合成器，合成图标图案存储器中的图标图案以生成图标。 图标利用控制器根据用户的输入控制图标合成器的图标合成，并监视图标合成器可合成的所有图标的利用。 在图标利用控制器的控制下，显示控制器根据图标利用率在计算机的显示屏幕上控制多个图标的显示。
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公开(公告)号：US4032945A
公开(公告)日：1977-06-28
申请号：US710307
申请日：1976-07-30
申请人： Mitsuhiro Mori , Kazuhiro Ito , Makoto Morioka , Yuichi Ono
发明人： Mitsuhiro Mori , Kazuhiro Ito , Makoto Morioka , Yuichi Ono
CPC分类号： H01L33/387 , H01L33/0025 , H01L33/10 , H01L33/20 , H01L33/642 , H01L33/647 , H01L33/58
摘要： A light emitting semiconductor diode comprises a first semiconductor region having a first conductivity type and a narrow forbidden band gap, a second semiconductor region, disposed on the first semiconductor region, having the first conductivity type and a low impurity concentration, a third semiconductor region, disposed on the second semiconductor region, having a second conductivity type which is opposite to the first conductivity type, and an ohmic contact disposed on the surface of the first semiconductor region, which is opposite to the second semiconductor region. The surface has a plurality of holes extending from the outer surface through the first semiconductor region toward a p-n junction between the second and third semiconductor regions, which holes are filled with a highly reflective metal having a high thermal conductivity.
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56.发明授权III-V Compound semi-conductor crystal growth from a liquid phase on a substract including filtering liquid phase 失效III-V化合物半导体晶体从包括过滤液相在内的液相上生长
公开(公告)号：US3981764A
公开(公告)日：1976-09-21
申请号：US590336
申请日：1975-06-25
申请人： Kazuhiro Ito , Masao Kawamura , Yuichi Ono , Makoto Morioka
发明人： Kazuhiro Ito , Masao Kawamura , Yuichi Ono , Makoto Morioka
IPC分类号： H05B33/14 , C30B19/06 , C30B19/08 , C30B19/10 , H01L33/22 , H01L33/30 , H05B33/12 , B01J17/20 , C01B19/00 , C01B27/00 , C01F7/00
CPC分类号： C30B19/10 , C30B19/063
摘要： In an epitaxial growth method in liquid phase for III-V compound semiconductor crystals a solution for crystal growth is at first heated to a temperature which is higher than the temperature of crystal growth, and then cooled to that temperature, whereby a part of the solution crystallizes out as small crystals. This solution is separated by means of a filter means into two parts, one of which contains the small crystals and the other of which does not. A substrate crystal is brought into contact with the latter.
摘要翻译： 在III-V族化合物半导体晶体的液相外延生长方法中，首先将晶体生长用溶液加热至比晶体生长温度高的温度，然后冷却至该温度，由此将一部分溶液 以小晶体结晶。 该溶液通过过滤器分离成两部分，其中一个包含小晶体，另一部分不含。 使衬底晶体与后者接触。
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