Apparatus for crystal growth
    5.
    发明授权
    Apparatus for crystal growth 失效
    晶体生长装置

    公开(公告)号:US4016829A

    公开(公告)日:1977-04-12

    申请号:US445898

    申请日:1974-02-26

    摘要: In order to eliminate non-uniformity in the temperature within the plane of a substrate that causes dispersions or variations in the characteristics of a grown layer during liquid phase epitaxial growth and to produce a grown layer having uniform characteristics, an apparatus for crystal growth according to the invention holds a substrate on a jig so that a flat surface of the substrate is arranged tangentially to an isothermal plane within the jig and aslant with respect to any position perpendicular or parallel to the axis or the center plane of the jig. Where a multiplicity of substrates are set, they are held on at least two flat surfaces which are tangential to an identical isothermal plane and which have different slopes.

    摘要翻译: 为了消除在液相外延生长期间引起生长层的分散或特性变化的衬底平面内的温度不均匀并产生具有均匀特性的生长层,根据 本发明在夹具上保持基板,使得基板的平坦表面与夹具内的等温平面相切地布置,并且相对于垂直或平行于夹具的轴线或中心平面的任何位置倾斜。 在设置多个基板的情况下,它们被保持在与相同等温平面相切并且具有不同斜率的至少两个平坦表面上。

    Light emitting semiconductor device and a method for making the same
    8.
    发明授权
    Light emitting semiconductor device and a method for making the same 失效
    发光半导体器件及其制造方法

    公开(公告)号:US4017881A

    公开(公告)日:1977-04-12

    申请号:US612282

    申请日:1975-09-11

    摘要: In a method for making a light emitting device having hemispherical dome type geometry, a p-conductivity type and then an n-conductivity type layer are successively grown epitaxially on a substrate made of a mixed compound semiconductor crystal having a band gap wider than the two above-mentioned layers. A surface portion of these epitaxially grown layers, which is not covered by a mask deposited on the n-conductivity type layer at a position where a p-n junction is to be formed, is doped with p-conductivity type impurities so that a small n-conductivity type region is surrounded by a region converted into p-conductivity type. The other side of the crystal is formed into a hemispherical shape so that the n-conductivity type region is located at the central portion of the hemisphere.

    摘要翻译: 在制造具有半球形圆顶型几何形状的发光器件的方法中,p型导电型和n型导电型层在由混合化合物半导体晶体制成的衬底上外延连续地生长,所述混合化合物半导体晶体的带隙宽于二 上述层。 这些外延生长层的表面部分未被掩模在沉积在n导电型层上的p型结的位置处的掩模覆盖,其中p型结被掺杂有p导电型杂质, 导电类型区域被转换为p导电型的区域包围。 晶体的另一侧形成为半球形状,使得n导电型区域位于半球的中心部分。