公开(公告)号：US07538987B2

公开(公告)日：2009-05-26

申请号：US10611978

申请日：2003-07-03

申请人： Hideo Fujiwara ,  Keiichi Nagasaka ,  Tong Zhao ,  William H. Butler ,  Julian Velev ,  Amrit Bandyopadhyay

发明人： Hideo Fujiwara ,  Keiichi Nagasaka ,  Tong Zhao ,  William H. Butler ,  Julian Velev ,  Amrit Bandyopadhyay

IPC分类号： G11B5/39

CPC分类号： G11B5/1278

摘要： A CPP spin-valve element formed on a substrate including a free layer structure including at least one ferromagnetic layer and a pinned layer structure including at least one ferromagnetic layer. The free layer is magnetically softer than the pinned layer. A thin non-magnetic spacer layer structure configured to separate the free layer and the pinned layer is provided in order to prevent a magnetic coupling between the free and pinned layer structures, and to allow an electric current to go there through. At least two current-confining (CC) layer structures including at least two parts having significantly different current conductivities are incorporated therein.

摘要翻译： 一种CPP自旋阀元件，其形成在包括至少一个铁磁层和包括至少一个铁磁层的钉扎层结构的自由层结构的基板上。 自由层比被钉扎层更软。 提供了构造成分离自由层和被钉扎层的薄非磁性间隔层结构，以防止自由和被钉扎层结构之间的磁耦合，并且允许电流通过其去。 包含至少两个电流限制（CC）层结构，其包括具有显着不同的电流电导率的至少两个部分。

公开(公告)号：US20090092805A1

公开(公告)日：2009-04-09

申请号：US11866443

申请日：2007-10-03

申请人： Tong Zhao ,  Andreas Karl Roelofs ,  Florin Zavaliche ,  Philip George Pitcher

发明人： Tong Zhao ,  Andreas Karl Roelofs ,  Florin Zavaliche ,  Philip George Pitcher

IPC分类号： B32B5/14 ,  C23C14/48 ,  C23C14/28

CPC分类号： G11B9/02 ,  B82Y10/00 ,  G11B5/746 ,  G11B9/1481 ,  Y10T428/24942

摘要： An apparatus includes a ferroelectric layer and a polarization pattern configured in the ferroelectric layer to represent position data. The polarization pattern has a switchable polarization state domain and an unswitchable polarization state domain. A method includes providing a ferroelectric layer and establishing a polarization pattern in the ferroelectric layer to represent position data.

摘要翻译： 一种装置包括强电介质层和配置在铁电层中以表示位置数据的偏振图案。 极化图案具有可切换的偏振状态域和不可切换的偏振态域。 一种方法包括提供铁电层并在铁电层中建立极化图案以表示位置数据。

公开(公告)号：US07377025B2

公开(公告)日：2008-05-27

申请号：US10977636

申请日：2004-10-29

申请人： Tong Zhao ,  Chyu-Jiuh Torng ,  Hui-Chuan Wang

发明人： Tong Zhao ,  Chyu-Jiuh Torng ,  Hui-Chuan Wang

IPC分类号： G11B5/193 ,  C23C14/48

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3909 ,  H01F10/3272 ,  H01F41/303 ,  H01L43/12 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A TMR read head with improved voltage breakdown is formed by laying down the AP1 layer as two or more layers. Each AP1 sub-layer is exposed to a low energy plasma for a short time before the next layer is deposited. This results in a smooth surface, onto which to deposit the tunneling barrier layer, with no disruption of the surface crystal structure of the completed AP1 layer.

摘要翻译： 通过将AP1层铺设为两层或更多层来形成具有改善的电压击穿的TMR读取头。 在下一层沉积之前，每个AP1子层在短时间内暴露于低能量等离子体。 这导致在其上沉积隧道势垒层的光滑表面，而不破坏完成的AP1层的表面晶体结构。

公开(公告)号：US20070111332A1

公开(公告)日：2007-05-17

申请号：US11280523

申请日：2005-11-16

申请人： Tong Zhao ,  Kunliang Zhang ,  Hui-Chuan Wang ,  Yu-Hsia Chen ,  Min Li

发明人： Tong Zhao ,  Kunliang Zhang ,  Hui-Chuan Wang ,  Yu-Hsia Chen ,  Min Li

IPC分类号： H01L21/00

CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/307 ,  Y10T428/1114 ,  Y10T428/1143

摘要： A high performance TMR sensor is fabricated by incorporating a tunnel barrier having a Mg/MgO/Mg configuration. The 4 to 14 Angstroms thick lower Mg layer and 2 to 8 Angstroms thick upper Mg layer are deposited by a DC sputtering method while the MgO layer is formed by a NOX process involving oxygen pressure from 0.1 mTorr to 1 Torr for 15 to 300 seconds. NOX time and pressure may be varied to achieve a MR ratio of at least 34% and a RA value of 2.1 ohm-um2. The NOX process provides a more uniform MgO layer than sputtering methods. The second Mg layer is employed to prevent oxidation of an adjacent ferromagnetic layer. In a bottom spin valve configuration, a Ta/Ru seed layer, IrMn AFM layer, CoFe/Ru/CoFeB pinned layer, Mg/MgO/Mg barrier, CoFe/NiFe free layer, and a cap layer are sequentially formed on a bottom shield in a read head.

摘要翻译： 通过并入具有Mg / MgO / Mg构型的隧道势垒来制造高性能TMR传感器。 通过DC溅射法沉积4至14埃厚的较低的Mg层和2至8埃厚的上部Mg层，而MgO层通过氧化压力为0.1毫托至1托的NOX工艺形成15至300秒。 可以改变NOX时间和压力以实现至少34％的MR比和2.1欧姆 - 欧姆的RA值。 NOX工艺提供比溅射方法更均匀的MgO层。 第二Mg层用于防止相邻铁磁层的氧化。 在底部自旋阀结构中，Ta / Ru籽晶层，IrMn AFM层，CoFe / Ru / CoFeB钉扎层，Mg / MgO / Mg阻挡层，CoFe / NiFe自由层和覆盖层依次形成在底部屏蔽 在读头。

公开(公告)号：US20070015293A1

公开(公告)日：2007-01-18

申请号：US11181176

申请日：2005-07-14

申请人： Hui-Chuan Wang ,  Tong Zhao ,  Min Li ,  Kunliang Zhang

发明人： Hui-Chuan Wang ,  Tong Zhao ,  Min Li ,  Kunliang Zhang

IPC分类号： H01L21/00

CPC分类号： H01L43/08 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3204 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3281 ,  H01F10/3295 ,  H01F41/303 ,  H01L43/12 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49041 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T29/49067

摘要： A high performance TMR element is fabricated by inserting an oxygen surfactant layer (OSL) between a pinned layer and AlOx tunnel barrier layer in a bottom spin valve configuration. The pinned layer preferably has a SyAP configuration with an outer pinned layer, a Ru coupling layer, and an inner pinned layer comprised of CoFeXBY/CoFeZ wherein x=0 to 70 atomic %, y=0 to 30 atomic %, and z=0 to 100 atomic %. The OSL is formed by treating the CoFez layer with oxygen plasma. The AlOx tunnel barrier has improved uniformity of about 2% across a 6 inch wafer and can be formed from an Al layer as thin as 5 Angstroms. As a result, the Hin value can be decreased by ⅓ to about 32 Oe. A dR/R of 25% and a RA of 3 ohm-cm2 have been achieved for TMR read head applications.

摘要翻译： 通过在底部自旋阀配置中的钉扎层和AlOx隧道势垒层之间插入氧表面活性剂层（OSL）来制造高性能TMR元件。 钉扎层优选具有SyAP构造，其具有外部被钉扎层，Ru结合层和由CoFe X B Y / CoFe Z组成的内部钉扎层 其中x = 0〜70原子％，y = 0〜30原子％，z = 0〜100原子％。 通过用氧等离子体处理CoFe z z层来形成OSL。 AlOx隧道势垒在6英寸晶片上提高了约2％的均匀性，并且可以由薄至5埃的Al层形成。 结果，Hin值可以减少1/3至约32Oe。 对于TMR读取头应用，已经实现了25％的dR / R和3欧姆 - 厘米2的RA。

公开(公告)号：US07110478B2

公开(公告)日：2006-09-19

申请号：US10119409

申请日：2002-04-09

申请人： Jingdong Lin ,  Justine Zhuang ,  Tong Zhao

发明人： Jingdong Lin ,  Justine Zhuang ,  Tong Zhao

IPC分类号： H03D1/00 ,  H04L27/06

CPC分类号： H04Q1/45

摘要： A method of detecting a tone signal from complex input samples r(n) in a wireless communication system is disclosed. The method comprises calculating the phase difference of the samples r(n) as a signal x(n). Next, the signal x(n) is filtered with a notch filter to generate a notched output y(n). The power of both the signal x(n) and the notched output y(n) is estimated. The ratio of the powers of the notched output y(n) and signal x(n) is calculated. The tone signal is detected if the ratio is below a predetermined threshold for a predetermined duration of time.

公开(公告)号：US20060061915A1

公开(公告)日：2006-03-23

申请号：US10948021

申请日：2004-09-23

申请人： Kunliang Zhang ,  Hui-Chuan Wang ,  Tong Zhao ,  Min Li ,  Chyu-Jiuh Torng

发明人： Kunliang Zhang ,  Hui-Chuan Wang ,  Tong Zhao ,  Min Li ,  Chyu-Jiuh Torng

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3929 ,  G11B2005/3996

摘要： A GMR spin value structure with improved performance and a method for making the same is disclosed. A key feature is the incorporation of a thin ferromagnetic insertion layer such as a 5 Angstrom thick CoFe layer between a NiCr seed layer and an IrMn AFM layer. Lowering the Ar flow rate to 10 sccm for the NiCr sputter deposition and raising the Ar flow rate to 100 sccm for the IrMn deposition enables the seed layer to be thinned to 25 Angstroms and the AFM layer to about 40 Angstroms. As a result, HEX between the AFM and pinned layers increases by up to 200 Oe while the Tb is maintained at or above 250° C. When the seed/CoFe/AFM configuration is used in a read head sensor, a higher GMR ratio is observed in addition to smaller free layer coercivity (HCF), interlayer coupling (HE), and HK values.

摘要翻译： 公开了具有改进性能的GMR自旋值结构及其制造方法。 一个关键特征是在NiCr种子层和IrMn AFM层之间引入薄铁磁插入层，例如5埃厚的CoFe层。 将Ni流速降低到10sccm，对于IrMn沉积，Ar流速提高到100sccm，使得种子层可以变薄到25埃，AFM层变成约40埃。 结果，AFM和被钉扎层之间的HEX增加高达200Oe，而Tb保持在或超过250℃。当在读头传感器中使用种子/ CoFe / AFM配置时，较高的GMR比率 观察到除了较小的自由层矫顽力（H SUB CF），层间耦合（H SUB）和HK值之外。

公开(公告)号：US06330234B1

公开(公告)日：2001-12-11

申请号：US09559675

申请日：2000-04-27

申请人： Peter A. Tomasi ,  Tong Zhao ,  Lindo St. Angel ,  Michael J. Schellinger ,  Dien N. Nguyen ,  Wayne H. Bradley

发明人： Peter A. Tomasi ,  Tong Zhao ,  Lindo St. Angel ,  Michael J. Schellinger ,  Dien N. Nguyen ,  Wayne H. Bradley

IPC分类号： H04J306

CPC分类号： H04J13/10 ,  H04B1/1615 ,  H04J13/0022 ,  H04W52/0225 ,  Y02D70/40

摘要： A method and apparatus reduces current consumption of a mobile communication unit, such as a cellular or mobile telephone that communicates with a base station by disabling a temperature controlled crystal oscillator and a code generator while the mobile communication unit is in a sleep mode of operation, thereby reducing the sleep mode current consumed by the mobile communication unit. Prior to entering sleep mode, the mobile communications unit stores the state of the code generator and disables the temperature controlled crystal oscillator. Upon waking from sleep mode, the mobile communication unit calculates what the state of its code generator would have been if its temperature controlled crystal oscillator had not been disabled, and uses this calculated state to achieve synchronization with a code generator in the base station.

摘要翻译： 一种方法和装置通过在移动通信单元处于睡眠操作模式期间禁用温度控制的晶体振荡器和代码生成器来减少与基站通信的移动通信单元（例如蜂窝或移动电话）的电流消耗， 从而减少由移动通信单元消耗的睡眠模式电流。 在进入睡眠模式之前，移动通信单元存储代码发生器的状态并禁止温度控制的晶体振荡器。 当从睡眠模式唤醒时，如果移动通信单元的温度控制晶体振荡器未被禁止，则计算其代码发生器的状态是什么，并且使用该计算状态来实现与基站中的代码生成器的同步。

公开(公告)号：US09040178B2

公开(公告)日：2015-05-26

申请号：US12284409

申请日：2008-09-22

申请人： Tong Zhao ,  Hui-Chuan Wang ,  Yu-Chen Zhou ,  Min Li ,  Kunliang Zhang

发明人： Tong Zhao ,  Hui-Chuan Wang ,  Yu-Chen Zhou ,  Min Li ,  Kunliang Zhang

IPC分类号： G11B5/39 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/09

CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3909 ,  G11B5/3929 ,  G11B2005/3996 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1143

摘要： A TMR sensor that includes a free layer having at least one B-containing (BC) layer made of CoFeB, CoFeBM, CoB, COBM, or CoBLM, and a plurality of non-B containing (NBC) layers made of CoFe, CoFeM, or CoFeLM is disclosed where L and M are one of Ni, Ta, Ti, W, Zr, Hf, Tb, or Nb. One embodiment is represented by (NBC/BC)n where n≧2. A second embodiment is represented by (NBC/BC)n/NBC where n≧1. In every embodiment, a NBC layer contacts the tunnel barrier and NBC layers each with a thickness from 2 to 8 Angstroms are formed in alternating fashion with one or more BC layers each 10 to 80 Angstroms thick. Total free layer thickness is

摘要翻译： 一种TMR传感器，其包括具有由CoFeB，CoFeBM，CoB，COBM或CoBLM制成的至少一个含B（BC）层的自由层和由CoFe，CoFeM制成的多个不含B的（NBC） 或CoFeLM，其中L和M是Ni，Ta，Ti，W，Zr，Hf，Tb或Nb之一。 一个实施方案由（NBC / BC）n表示，其中n≥2。 第二实施例由（NBC / BC）n / NBC表示，其中n≥1。 在每个实施例中，NBC层接触隧道势垒，并且各自具有2至8埃厚度的NBC层以与10至80埃厚的BC层交替地形成。 总自由层厚度<100埃。 这里描述的自由层配置能够在实现高TMR比，低磁致伸缩，低RA和低Hc值的同时实现显着的降噪（SNR增强）。

公开(公告)号：US08747629B2

公开(公告)日：2014-06-10

申请号：US12284454

申请日：2008-09-22

申请人： Hui-Chuan Wang ,  Tong Zhao ,  Min Li ,  Kunliang Zhang

发明人： Hui-Chuan Wang ,  Tong Zhao ,  Min Li ,  Kunliang Zhang

IPC分类号： C23C14/00 ,  C23C14/32 ,  G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/33 ,  G11B5/3929 ,  G11B2005/3996 ,  Y10T428/1114

摘要： A TMR sensor with a free layer having a FL1/FL2/FL3 configuration is disclosed in which FL1 is FeCo or a FeCo alloy with a thickness between 2 and 15 Angstroms. The FL2 layer is made of CoFeB or a CoFeB alloy having a thickness from 2 to 10 Angstroms. The FL3 layer is from 10 to 100 Angstroms thick and has a negative λ to offset the positive λ from FL1 and FL2 layers and is comprised of CoB or a CoBQ alloy where Q is one of Ni, Mn, Tb, W, Hf, Zr, Nb, and Si. Alternatively, the FL3 layer may be a composite such as CoB/CoFe, (CoB/CoFe)n where n is ≧2 or (CoB/CoFe)m/CoB where m is ≧1. The free layer described herein affords a high TMR ratio above 60% while achieving low values for λ (

摘要翻译： 公开了具有FL1 / FL2 / FL3结构的自由层的TMR传感器，其中FL1是FeCo或厚度在2和15埃之间的FeCo合金。 FL2层由厚度为2〜10埃的CoFeB或CoFeB合金制成。 FL3层的厚度为10〜100埃，并且具有负λ以从FL1和FL2层偏移正的λ，由CoB或CoBQ合金组成，其中Q是Ni，Mn，Tb，W，Hf，Zr ，Nb和Si。 或者，FL3层可以是其中n为≥2的CoB / CoFe（CoB / CoFe）n或（CoB / CoFe）m / CoB（其中m为≥1）的复合物。 此处描述的自由层提供高于60％的高TMR比，同时实现λ（<5×10-6），RA（1.5欧姆/μm2）和Hc（<6Oe）的低值。