公开(公告)号：US08796761B2

公开(公告)日：2014-08-05

申请号：US13420772

申请日：2012-03-15

申请人： Franz Hirler ,  Markus Zundel

发明人： Franz Hirler ,  Markus Zundel

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/401 ,  H01L29/407 ,  H01L29/408 ,  H01L29/42368 ,  H01L29/512 ,  H01L29/66734

摘要： A semiconductor device includes a trench region extending into a drift zone of a semiconductor body from a surface. The semiconductor device further includes a dielectric structure extending along a lateral side of the trench region, wherein a part of the dielectric structure is a charged insulating structure. The semiconductor device further includes a gate electrode in the trench region and a body region of a conductivity type other than the conductivity type of the drift zone. The charged insulating structure adjoins each one of the drift zone, the body region and the dielectric structure and further adjoins or is arranged below a bottom side of a gate dielectric of the dielectric structure.

摘要翻译： 半导体器件包括从表面延伸到半导体本体的漂移区的沟槽区域。 半导体器件还包括沿着沟槽区域的横向侧延伸的电介质结构，其中介电结构的一部分是带电的绝缘结构。 半导体器件还包括沟槽区域中的栅电极和除漂移区的导电类型以外的导电类型的体区。 带电的绝缘结构邻接漂移区，体区和电介质结构中的每一个，并进一步邻接或布置在电介质结构的栅极电介质的底侧下方。

公开(公告)号：US08482036B2

公开(公告)日：2013-07-09

申请号：US13090350

申请日：2011-04-20

申请人： Markus Zundel ,  Franz Hirler

发明人： Markus Zundel ,  Franz Hirler

IPC分类号： H01L29/778

CPC分类号： H01L29/778 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/7787 ,  H01L29/872

摘要： A lateral HEMT includes a substrate, a first semiconductor layer above the substrate and a second semiconductor layer on the first semiconductor layer. The lateral HEMT further includes a gate electrode, a source electrode, a drain electrode and a rectifying Schottky junction. A first terminal of the rectifying Schottky junction is electrically coupled to the source electrode and a second terminal of the rectifying Schottky junction is electrically coupled to the second semiconductor layer.

摘要翻译： 横向HEMT包括衬底，在衬底上方的第一半导体层和第一半导体层上的第二半导体层。 横向HEMT还包括栅电极，源电极，漏电极和整流肖特基结。 整流肖特基结的第一端电耦合到源电极，并且整流肖特基结的第二端电耦合到第二半导体层。

公开(公告)号：US20120032260A1

公开(公告)日：2012-02-09

申请号：US13276854

申请日：2011-10-19

申请人： Franz Hirler ,  Markus Zundel

发明人： Franz Hirler ,  Markus Zundel

IPC分类号： H01L29/78 ,  H01L29/41

CPC分类号： H01L29/7813 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/4238 ,  H01L29/7811 ,  H01L29/945

摘要： A semiconductor device including a connecting structure includes an edge region, a first trench and a second trench running toward the edge region, a first electrode within the first trench, and a second electrode within the second trench, the first and second electrodes being arranged in a same electrode plane with regard to a main surface of a substrate of the electronic device within the trenches, and the first electrode extending, at an edge region side end of the first trench, farther toward the edge region than the second electrode extends, at an edge region side end of the second trench, toward the edge region.

摘要翻译： 包括连接结构的半导体器件包括边缘区域，朝向边缘区域延伸的第一沟槽和第二沟槽，第一沟槽内的第一电极和第二沟槽内的第二电极，第一和第二电极被布置在 相对于沟槽内的电子器件的基板的主表面的相同的电极平面，并且在第一沟槽的边缘区域侧端延伸的第一电极比第二电极延伸到边缘区域延伸，在 第二沟槽的边缘区域侧端部朝向边缘区域。

公开(公告)号：US07601596B2

公开(公告)日：2009-10-13

申请号：US11600422

申请日：2006-11-16

申请人： Markus Zundel ,  Franz Hirler ,  Rudolf Zelsacher ,  Erwin Bacher

发明人： Markus Zundel ,  Franz Hirler ,  Rudolf Zelsacher ,  Erwin Bacher

IPC分类号： H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66727 ,  H01L29/66734

摘要： According to one embodiment, a method for manufacturing a semiconductor device includes forming trenches in a first side of a semiconductor material and forming a thick oxide layer on the trenches and on the first side. A part of the first side and the trenches is masked using a first mask, and the semiconductor material is doped by implantation through the thick oxide layer while the first mask is present. At least part of the thick oxide layer is removed while the first mask remains.

摘要翻译： 根据一个实施例，一种用于制造半导体器件的方法包括：在半导体材料的第一侧形成沟槽，并在沟槽和第一侧上形成厚的氧化物层。 使用第一掩模掩模第一侧面和沟槽的一部分，并且通过在第一掩模存在的情况下通过厚氧化物层的注入来掺杂半导体材料。 当第一掩模残留时，去除厚氧化物层的至少一部分。

公开(公告)号：US20090218621A1

公开(公告)日：2009-09-03

申请号：US11996906

申请日：2006-07-27

申请人： Frank Pfirsch ,  Anton Mauder ,  Armin Willmeroth ,  Hans-Joachim Schulze ,  Stefan Sedlmaier ,  Markus Zundel ,  Franz Hirler ,  Arunjai Mittal

发明人： Frank Pfirsch ,  Anton Mauder ,  Armin Willmeroth ,  Hans-Joachim Schulze ,  Stefan Sedlmaier ,  Markus Zundel ,  Franz Hirler ,  Arunjai Mittal

IPC分类号： H01L29/78 ,  H01L27/06 ,  H01L29/739

CPC分类号： H01L29/7803 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4916 ,  H01L29/66734 ,  H01L29/7802 ,  H01L29/7804 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/872

摘要： A semiconductor component with a drift region and a drift control region. One embodiment includes a semiconductor body having a drift region of a first conduction type in the semiconductor body. A drift control region composed of a semiconductor material, which is arranged, at least in sections, is adjacent to the drift region in the semiconductor body. An accumulation dielectric is arranged between the drift region and the drift control region.

摘要翻译： 具有漂移区域和漂移控制区域的半导体部件。 一个实施例包括半导体本体中具有第一导电类型的漂移区的半导体本体。 由半导体材料组成的漂移控制区域至少部分地布置成与半导体本体中的漂移区域相邻。 在漂移区域和漂移控制区域之间布置积累电介质。

公开(公告)号：US07446373B2

公开(公告)日：2008-11-04

申请号：US10939154

申请日：2004-09-10

申请人： Markus Zundel ,  Rudolf Zelsacher ,  Franz Hirler ,  Dietmar Kotz ,  Hermann Peri ,  Armin Willmeroth

发明人： Markus Zundel ,  Rudolf Zelsacher ,  Franz Hirler ,  Dietmar Kotz ,  Hermann Peri ,  Armin Willmeroth

IPC分类号： H01L29/76

CPC分类号： H01L29/7813 ,  H01L29/0615 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/7811

摘要： A semiconductor component and also a method for producing it are disclosed. In one embodiment, the semiconductor component includes a surface region or a modified doping region is provided alternatively or simultaneously in the edge region of the cell array, in which surface region or modified doping region the doping concentration is lowered and/or in which surface region or modified doping region the conductivity type is formed such that it is opposite to the conductivity type of the actual semiconductor material region, or in which a field plate region is provided.

摘要翻译： 公开了一种半导体元件及其制造方法。 在一个实施例中，半导体部件包括表面区域或修改的掺杂区域交替地或同时地设置在电池阵列的边缘区域中，其中掺杂浓度降低的表面区域或修饰掺杂区域和/或其中表面区域 或改性掺杂区域形成导电类型，使其与实际的半导体材料区域的导电类型相反，或者设置有场板区域。

公开(公告)号：US20080265318A1

公开(公告)日：2008-10-30

申请号：US12167437

申请日：2008-07-03

申请人： Markus Zundel ,  Rudolf Zelsacher ,  Franz Hirler ,  Dietmar Kotz ,  Hermann Peri ,  Armin Willmeroth

发明人： Markus Zundel ,  Rudolf Zelsacher ,  Franz Hirler ,  Dietmar Kotz ,  Hermann Peri ,  Armin Willmeroth

IPC分类号： H01L27/088 ,  H01L21/8234

CPC分类号： H01L29/7813 ,  H01L29/0615 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/7811

摘要： A semiconductor component includes a surface region. A modified doping region is provided in the edge region of the cell array. In the surface region or modified doping region the doping concentration is lowered and/or in the surface region or modified doping region the conductivity type is formed such that it is opposite to the conductivity type of the actual semiconductor material region, or in which a field plate region is provided.

摘要翻译： 半导体部件包括表面区域。 在单元阵列的边缘区域中提供修改的掺杂区域。 在表面区域或改性掺杂区域中，掺杂浓度降低和/或在表面区域或修饰掺杂区域中形成导电类型，使其与实际半导体材料区域的导电类型相反，或者其中场 板区域。

公开(公告)号：US20080128803A1

公开(公告)日：2008-06-05

申请号：US11947552

申请日：2007-11-29

申请人： Franz Hirler ,  Markus Zundel

发明人： Franz Hirler ,  Markus Zundel

IPC分类号： H01L29/78

CPC分类号： H01L29/7813 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/4238 ,  H01L29/7811 ,  H01L29/945

摘要： A connecting structure for an electronic device includes an edge region of the device, a first trench and a second trench running toward the edge region, a first electrode within the first trench, and a second electrode within the second trench, the first and second electrodes being arranged in a same electrode plane with regard to a main surface of a substrate of the electronic device within the trenches, and the first electrode extending, at an edge region side end of the first trench, farther toward the edge region than the second electrode extends, at an edge region side end of the second trench, toward the edge region.

摘要翻译： 电子设备的连接结构包括器件的边缘区域，朝向边缘区域延伸的第一沟槽和第二沟槽，第一沟槽内的第一电极和第二沟槽内的第二电极，第一和第二电极 相对于沟槽内的电子器件的基板的主表面而布置在相同的电极平面中，并且在第一沟槽的边缘区域侧端部延伸的第一电极比第二电极更向边缘区域延伸 在第二沟槽的边缘区域侧端部延伸到边缘区域。

公开(公告)号：US07372103B2

公开(公告)日：2008-05-13

申请号：US11395103

申请日：2006-03-31

申请人： Markus Zundel ,  Franz Hirler

发明人： Markus Zundel ,  Franz Hirler

IPC分类号： H01L29/76

CPC分类号： H01L29/7813 ,  H01L29/0873 ,  H01L29/41766 ,  H01L29/42368

摘要： A MOS field plate trench transistor device is disclosed. In one embodiment, in order to obtain a lowest possible on resistance, in the case of a MOS field plate trench transistor device having a body contact hole, it is proposed to form the avalanche breakdown region preferably in an end region of a provided trench structure by virtue of the fact that a mesa region with the body contact region in the semiconductor region as intermediate region in a direction running perpendicular to the first direction and with respect to an adjacent MOS transistor device has a width DMesa, the value of which corresponds to the value of the width DTrench of the trench structure in this direction or exceeds said value and does not go beyond 1.5 times said value, so that the following holds true: DTrench≦DMesa≦1.5·DTrench. As an alternative, the width DMesa is chosen such that the body contact hole precisely still has space, but the breakdown region is in any event shifted into the end region.

摘要翻译： 公开了一种MOS场板沟槽晶体管器件。 在一个实施例中，为了获得最低可能的导通电阻，在具有体接触孔的MOS场板沟槽晶体管器件的情况下，优选地在所提供的沟槽结构的端部区域中形成雪崩击穿区域 由于在半导体区域中具有与第一方向垂直的方向作为中间区域并且相对于相邻的MOS晶体管器件的半导体区域的台面区域具有宽度D Sub Mesa ，其值对应于该方向上的沟槽结构的宽度D <沟槽的值或超过所述值，并且不超过所述值的1.5倍，使得以下是正确的： 作为替代方案，选择宽度D Mesa 使得身体接触孔精确地仍然具有空间，但击穿区域在任何情况下都移入端部区域。

公开(公告)号：US20070215920A1

公开(公告)日：2007-09-20

申请号：US11715275

申请日：2007-03-07

申请人： Markus Zundel ,  Franz Hirler ,  Norbert Krischke

发明人： Markus Zundel ,  Franz Hirler ,  Norbert Krischke

IPC分类号： H01L29/76

CPC分类号： H01L29/7816 ,  H01L21/743 ,  H01L27/0733 ,  H01L28/40 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/66734 ,  H01L29/7803 ,  H01L29/7804 ,  H01L29/7809 ,  H01L29/7813 ,  H01L29/945

摘要： Disclosed is a semiconductor component arrangement and a method for producing a semiconductor component arrangement. The method comprises producing a trench transistor structure with at least one trench disposed in the semiconductor body and with at least a gate electrode disposed in the at least one trench. An electrode structure is disposed in at least one further trench and comprises an at least one electrode. The at least one trench of the transistor structure and the at least one further trench are produced by common process steps. Furthermore, the at least one electrode of the electrode structure and the gate electrode are produced by common process steps.

摘要翻译： 公开了一种用于制造半导体元件布置的半导体元件布置和方法。 该方法包括产生沟槽晶体管结构，其中至少一个沟槽设置在半导体本体中，并且至少一个栅电极设置在该至少一个沟槽中。 电极结构设置在至少一个另外的沟槽中，并且包括至少一个电极。 晶体管结构的至少一个沟槽和至少一个另外的沟槽通过公共工艺步骤产生。 此外，电极结构的至少一个电极和栅电极通过常规的工艺步骤制造。