公开(公告)号：US20100188877A1

公开(公告)日：2010-07-29

申请号：US12659984

申请日：2010-03-26

申请人： Satoru Hanzawa ,  Kiyoo Itoh ,  Hideyuki Matsuoka ,  Motoyasu Terao ,  Takeshi Sakata

发明人： Satoru Hanzawa ,  Kiyoo Itoh ,  Hideyuki Matsuoka ,  Motoyasu Terao ,  Takeshi Sakata

IPC分类号： G11C5/06

CPC分类号： H01L27/101 ,  G11C7/12 ,  G11C8/10 ,  G11C11/16 ,  G11C11/1653 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1693 ,  G11C13/0004 ,  G11C13/0026 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0042 ,  G11C2013/0054 ,  G11C2013/0078 ,  G11C2213/79 ,  H01L27/2436 ,  H01L27/2454 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/144

摘要： The object of the invention is to avoid an unselected data line being driven in a memory array composed of memory cells each of which uses a storage element depending upon variable resistance and a selection transistor when the selection transistors in all memory cells on a selected word line conduct. To achieve the object, a source line parallel to a data line is provided, a precharge circuit for equipotentially driving both and a circuit for selectively driving the source line are arranged. Owing to this configuration, a current path is created in only a cell selected by a row decoder and a column decoder and a read-out signal can be generated. Therefore, a lower-power, lower-noise and more highly integrated nonvolatile memory such as a phase change memory can be realized, compared with a conventional type.

摘要翻译： 本发明的目的是避免在由存储器单元组成的存储器阵列中驱动未选择的数据线，每个存储器单元在选择的字线上的所有存储单元中的选择晶体管时根据可变电阻使用存储元件和选择晶体管 进行。 为了实现该目的，提供了与数据线并行的源极线，布置用于等电位驱动两者的预充电电路和用于选择性地驱动源极线的电路。 由于该配置，仅在由行解码器选择的单元中创建电流路径，并且可以生成列解码器，并且可以生成读出信号。 因此，与常规型相比，可以实现诸如相变存储器的低功率，低噪声和更高度集成的非易失性存储器。

公开(公告)号：US20080062736A1

公开(公告)日：2008-03-13

申请号：US11976532

申请日：2007-10-25

申请人： Satoru Hanzawa ,  Kiyoo Itoh ,  Hideyuki Matsuoka ,  Motoyasu Terao ,  Takeshi Sakata

发明人： Satoru Hanzawa ,  Kiyoo Itoh ,  Hideyuki Matsuoka ,  Motoyasu Terao ,  Takeshi Sakata

IPC分类号： G11C5/02

CPC分类号： H01L27/101 ,  G11C7/12 ,  G11C8/10 ,  G11C11/16 ,  G11C11/1653 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1693 ,  G11C13/0004 ,  G11C13/0026 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0042 ,  G11C2013/0054 ,  G11C2013/0078 ,  G11C2213/79 ,  H01L27/2436 ,  H01L27/2454 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/144

摘要： The object of the invention is to avoid an unselected data line being driven in a memory array composed of memory cells each of which uses a storage element depending upon variable resistance and a selection transistor when the selection transistors in all memory cells on a selected wordline conduct. To achieve the object, a source line parallel to a data line is provided, a precharge circuit for equipotentially driving both and a circuit for selectively driving the source line are arranged. Owing to this configuration, a current path is created in only a cell selected by a row decoder and a column decoder and a read-out signal can be generated. Therefore, a lower-power, lower-noise and more highly integrated nonvolatile memory such as a phase change memory can be realized, compared with a conventional type.

摘要翻译： 本发明的目的是避免在由选择的字线上的所有存储单元中的选择晶体管导通的存储单元中构成的存储器阵列中的未选择的数据线被驱动，每个存储器单元使用依赖于可变电阻的存储元件和选择晶体管 。 为了实现该目的，提供了与数据线并行的源极线，布置用于等电位驱动两者的预充电电路和用于选择性地驱动源极线的电路。 由于该配置，仅在由行解码器选择的单元中创建电流路径，并且可以生成列解码器，并且可以生成读出信号。 因此，与常规型相比，可以实现诸如相变存储器的低功率，低噪声和更高度集成的非易失性存储器。

公开(公告)号：US20060280010A1

公开(公告)日：2006-12-14

申请号：US11507576

申请日：2006-08-22

申请人： Satoru Hanzawa ,  Kiyoo Itoh ,  Hideyuki Matsuoka ,  Motoyasu Terao ,  Takeshi Sakata

发明人： Satoru Hanzawa ,  Kiyoo Itoh ,  Hideyuki Matsuoka ,  Motoyasu Terao ,  Takeshi Sakata

IPC分类号： G11C7/00

CPC分类号： H01L27/101 ,  G11C7/12 ,  G11C8/10 ,  G11C11/16 ,  G11C11/1653 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1693 ,  G11C13/0004 ,  G11C13/0026 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0042 ,  G11C2013/0054 ,  G11C2013/0078 ,  G11C2213/79 ,  H01L27/2436 ,  H01L27/2454 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/144

摘要： The object of the invention is to avoid an unselected data line being driven in a memory array composed of memory cells each of which uses a storage element depending upon variable resistance and a selection transistor when the selection transistors in all memory cells on a selected word line conduct. To achieve the object, a source line parallel to a data line is provided, a precharge circuit for equipotentially driving both and a circuit for selectively driving the source line are arranged. Owing to this configuration, a current path is created in only a cell selected by a row decoder and a column decoder and a read-out signal can be generated. Therefore, a lower-power, lower-noise and more highly integrated nonvolatile memory such as a phase change memory can be realized, compared with a conventional type.

公开(公告)号：US06740921B2

公开(公告)日：2004-05-25

申请号：US10307373

申请日：2002-12-02

申请人： Hideyuki Matsuoka ,  Kiyoo Itoh ,  Motoyasu Terao ,  Satoru Hanzawa ,  Takeshi Sakata

发明人： Hideyuki Matsuoka ,  Kiyoo Itoh ,  Motoyasu Terao ,  Satoru Hanzawa ,  Takeshi Sakata

IPC分类号： H01L27108

CPC分类号： H01L27/2454 ,  G11C13/0004 ,  G11C2213/79 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144

摘要： A semiconductor memory cell and forming method thereof utilizes a vertical select transistor to eliminate the problem of a large cell surface area in memory cells of the related art utilizing phase changes. A memory cell with a smaller surface area than the DRAM device of the related art is achieved by the present invention. Besides low power consumption during read operation, the invention also provides phase change memory having low power consumption even during write operation. Phase change memory also has stable read-out operation.

公开(公告)号：US20110292722A1

公开(公告)日：2011-12-01

申请号：US13207611

申请日：2011-08-11

申请人： SATORU HANZAWA ,  Hitoshi Kume ,  Motoyasu Terao ,  Tomonori Sekiguchi ,  Makoto Saen

发明人： SATORU HANZAWA ,  Hitoshi Kume ,  Motoyasu Terao ,  Tomonori Sekiguchi ,  Makoto Saen

IPC分类号： G11C11/00

CPC分类号： G01R31/31715 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2013/0083 ,  G11C2213/71 ,  G11C2213/72 ,  Y10T29/49169

摘要： A highly reliable large capacity phase change memory module is realized. A semiconductor device according to the present invention includes a memory array having a structure in which a storage layer using a chalcogcnidc material and a memory cell constituted of a diode are stacked, and an initialization condition and a rewriting condition are changed in accordance with the layer where a selected memory cell is located. A current mirror circuit is selected in accordance with an operation, and at the same time, the initialization condition and the rewriting condition (here, reset condition) are changed in accordance with the operation by a control mechanism of the reset current in a voltage selection circuit and a current mirror circuit.

摘要翻译： 实现了高度可靠的大容量相变存储器模块。 根据本发明的半导体器件包括存储阵列，该存储器阵列具有堆叠使用了电阻元件的存储层和由二极管构成的存储单元的结构，并且根据层来改变初始化条件和重写条件 其中所选择的存储器单元被定位。 根据操作选择电流镜电路，并且同时根据电压选择中的复位电流的控制机构的操作来改变初始化条件和重写条件（这里为复位条件） 电路和电流镜电路。

公开(公告)号：US07852727B2

公开(公告)日：2010-12-14

申请号：US12078227

申请日：2008-03-28

申请人： Makoto Miyamoto ,  Tsuyoshi Toda ,  Masatoshi Ohtake ,  Motoyasu Terao ,  Junko Ushiyama ,  Keikichi Andoo ,  Yumiko Anzai ,  Akemi Hirotsune ,  Tetsuya Nishida ,  Hideki Saga

发明人： Makoto Miyamoto ,  Tsuyoshi Toda ,  Masatoshi Ohtake ,  Motoyasu Terao ,  Junko Ushiyama ,  Keikichi Andoo ,  Yumiko Anzai ,  Akemi Hirotsune ,  Tetsuya Nishida ,  Hideki Saga

IPC分类号： G11B7/00

CPC分类号： G11B7/0062 ,  G11B7/00454 ,  G11B7/00557 ,  G11B7/006 ,  G11B7/126 ,  G11B20/10009 ,  G11B20/1426

摘要： Recording information is disclosed in which an information recording medium is irradiated with a recording energy beam that is power-modulated into at least a record power level and a record-ready power level lower than the record power level. The information is recorded on the recording medium in the form of length and interval of a mark portion. When forming a mark portion of a predetermined length, the radiation energy of the energy beam is increased as compared with when forming a mark portion of a different length before or after the first pulse of an energy beam pulse train including at least a pulse for forming the mark portion.

摘要翻译： 公开了一种信息记录介质，其被记录能量束照射，所述记录能量束被功率调制成至少记录功率电平和低于记录功率电平的记录就绪功率电平。 信息以标记部分的长度和间隔的形式记录在记录介质上。 当形成预定长度的标记部分时，与在至少包括用于形成的脉冲的能量束脉冲串的第一脉冲之前或之后形成不同长度的标记部分相比，能量束的辐射能量增加 标记部分。

公开(公告)号：US20090040901A1

公开(公告)日：2009-02-12

申请号：US12219347

申请日：2008-07-21

申请人： Makoto Miyamoto ,  Tsuyoshi Toda ,  Masatoshi Ohtake ,  Motoyasu Terao ,  Junko Ushiyama ,  Keikichi Andoo ,  Yumiko Anzai ,  Akemi Hirotsune ,  Tetsuya Nishida ,  Hideki Saga

发明人： Makoto Miyamoto ,  Tsuyoshi Toda ,  Masatoshi Ohtake ,  Motoyasu Terao ,  Junko Ushiyama ,  Keikichi Andoo ,  Yumiko Anzai ,  Akemi Hirotsune ,  Tetsuya Nishida ,  Hideki Saga

IPC分类号： G11B7/00

CPC分类号： G11B7/0062 ,  G11B7/00454 ,  G11B7/00557 ,  G11B7/006 ,  G11B7/126 ,  G11B20/10009 ,  G11B20/1426

摘要： Recording information is disclosed in which an information recording medium is irradiated with a recording energy beam that is power-modulated into at least a record power level and a record-ready power level lower than the record power level. The information is recorded on the recording medium in the form of length and interval of a mark portion. When forming a mark portion of a predetermined length, the radiation energy of the energy beam is increased as compared with when forming a mark portion of a different length before or after the first pulse of an energy beam pulse train including at least a pulse for forming the mark portion.

公开(公告)号：US20090034393A1

公开(公告)日：2009-02-05

申请号：US12219346

申请日：2008-07-21

申请人： Makoto Miyamoto ,  Tsuyoshi Toda ,  Masatoshi Ohtake ,  Motoyasu Terao ,  Junko Ushiyama ,  Keikichi Andoo ,  Yumiko Anzai ,  Akemi Hirotsune ,  Tetsuya Nishida ,  Hideki Saga

发明人： Makoto Miyamoto ,  Tsuyoshi Toda ,  Masatoshi Ohtake ,  Motoyasu Terao ,  Junko Ushiyama ,  Keikichi Andoo ,  Yumiko Anzai ,  Akemi Hirotsune ,  Tetsuya Nishida ,  Hideki Saga

IPC分类号： G11B7/00

CPC分类号： G11B7/0062 ,  G11B7/00454 ,  G11B7/00557 ,  G11B7/006 ,  G11B7/126 ,  G11B20/10009 ,  G11B20/1426

摘要： Recording information is disclosed in which an information recording medium is irradiated with a recording energy beam that is power-modulated into at least a record power level and a record-ready power level lower than the record power level. The information is recorded on the recording medium in the form of length and interval of a mark portion. When forming a mark portion of a predetermined length, the radiation energy of the energy beam is increased as compared with when forming a mark portion of a different length before or after the first pulse of an energy beam pulse train including at least a pulse for forming the mark portion.

摘要翻译： 公开了一种信息记录介质，其被记录能量束照射，所述记录能量束被功率调制成至少记录功率电平和低于记录功率电平的记录就绪功率电平。 信息以标记部分的长度和间隔的形式记录在记录介质上。 当形成预定长度的标记部分时，与在至少包括用于形成的脉冲的能量束脉冲串的第一脉冲之前或之后形成不同长度的标记部分相比，能量束的辐射能量增加 标记部分。

公开(公告)号：US20080156261A1

公开(公告)日：2008-07-03

申请号：US11797320

申请日：2007-05-02

申请人： Yuko Tsuchiya ,  Motoyasu Terao

发明人： Yuko Tsuchiya ,  Motoyasu Terao

IPC分类号： B05C5/00

CPC分类号： G11B5/65 ,  G11B5/00 ,  G11B5/012 ,  G11B5/82 ,  G11B5/84 ,  G11B5/852 ,  G11B11/10536 ,  G11B2005/0002 ,  G11B2005/0005 ,  G11B2005/0021 ,  Y10T428/256

摘要： The magnetic recording medium provided is produced by forming a substrate having a nanoparticle layer comprising an array of nanoparticles, and an organic compound between said array of nanoparticles; irradiating the nanoparticle layer with an infrared beam to magnetize the nanoparticles; applying a magnetic field to the nanoparticle layer to orient easy axis of magnetization of the magnetic nanoparticles in a substantially uniform direction; and irradiating the nanoparticle layer with an ultraviolet beam to bind said organic compound to thereby produce a magnetic recording medium wherein easy axis of magnetization of the nanoparticles has been oriented in a direction substantially parallel to a direction at a particular angle with the substrate. The resulting magnetic recording medium experiences no deterioration of the underlying layer or the soft magnetic layer, and exhibits good magnetic properties.

摘要翻译： 提供的磁记录介质通过形成具有包含纳米颗粒阵列的纳米颗粒层的基底和在所述纳米颗粒阵列之间的有机化合物来制备; 用红外线照射纳米颗粒层以磁化纳米颗粒; 将磁场施加到纳米颗粒层以使磁性纳米颗粒的易磁化轴在基本上均匀的方向上定向; 并用紫外线照射纳米颗粒层以结合所述有机化合物，从而产生磁记录介质，其中纳米颗粒的易磁化轴沿基本上平行于与基底的特定角度的方向取向。 所得到的磁记录介质没有经历下层或软磁层的劣化，并且表现出良好的磁性能。

公开(公告)号：US07229709B2

公开(公告)日：2007-06-12

申请号：US10750882

申请日：2004-01-05

申请人： Yuko Tsuchiya ,  Motoyasu Terao

发明人： Yuko Tsuchiya ,  Motoyasu Terao

IPC分类号： G11B5/66 ,  G11B5/70

CPC分类号： G11B5/65 ,  G11B5/00 ,  G11B5/012 ,  G11B5/82 ,  G11B5/84 ,  G11B5/852 ,  G11B11/10536 ,  G11B2005/0002 ,  G11B2005/0005 ,  G11B2005/0021 ,  Y10T428/256

摘要： The magnetic recording medium provided is produced by forming a substrate having a nanoparticle layer comprising an array of nanoparticles, and an organic compound between said array of nanoparticles; irradiating the nanoparticle layer with an infrared beam to magnetize the nanoparticles; applying a magnetic field to the nanoparticle layer to orient easy axis of magnetization of the magnetic nanoparticles in a substantially uniform direction; and irradiating the nanoparticle layer with an ultraviolet beam to bind said organic compound to thereby produce a magnetic recording medium wherein easy axis of magnetization of the nanoparticles has been oriented in a direction substantially parallel to a direction at a particular angle with the substrate. The resulting magnetic recording medium experiences no deterioration of the underlying layer or the soft magnetic layer, and exhibits good magnetic properties.

摘要翻译： 提供的磁记录介质通过形成具有包含纳米颗粒阵列的纳米颗粒层的基底和在所述纳米颗粒阵列之间的有机化合物来制备; 用红外线照射纳米颗粒层以磁化纳米颗粒; 将磁场施加到纳米颗粒层以使磁性纳米颗粒的易磁化轴在基本上均匀的方向上定向; 并用紫外线照射纳米颗粒层以结合所述有机化合物，从而产生磁记录介质，其中纳米颗粒的易磁化轴沿基本上平行于与基底的特定角度的方向取向。 所得到的磁记录介质没有经历下层或软磁层的劣化，并且表现出良好的磁性能。