利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

208 条记录 (耗时 0.043 秒)

    Substrate treatment apparatus and method of manufacturing semiconductor device
    52.
    发明申请
    Substrate treatment apparatus and method of manufacturing semiconductor device 审中-公开
    基板处理装置及半导体装置的制造方法

    公开(公告)号：US20060258174A1

    公开(公告)日：2006-11-16

    申请号：US10549698

    申请日：2004-07-09

    申请人： Masanori Sakai ,  Toru Kagaya ,  Hirohisa Yamazaki

    发明人： Masanori Sakai ,  Toru Kagaya ,  Hirohisa Yamazaki

    IPC分类号： C23C16/00 ,  H01L21/31

    CPC分类号： H01L21/3162 ,  C23C16/403 ,  C23C16/45546 ,  C23C16/4557 ,  C23C16/45578 ,  C23C16/46 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/67109

    摘要： A substrate treatment apparatus, comprising a reaction tube (203) and a heater (207) heating a silicon wafer (200), wherein trimethyl aluminum (TMA) and ozone (O3) are alternately fed into the reaction tube (203) to generate Al2O3 film on the surface of the wafer (200). The apparatus also comprises supply tubes (232a) and (232b) for flowing the ozone and TMA and a nozzle (233) supplying gas into the reaction tube (203). The two supply tubes (232a) and (232b) are connected to the nozzle (233) disposed inside the heater (207) in a zone inside the reaction tube (203) where a temperature is lower than a temperature near the wafer (200) and the ozone and TMA are supplied into the reaction tube (203) through the nozzle (233).

    摘要翻译： 一种基板处理装置，包括反应管（203）和加热硅晶片（200）的加热器（207），其中三甲基铝（TMA）和臭氧（O 3 3）交替地供给到 反应管（203）以在晶片（200）的表面上产生Al 2 O 3 N 3膜。 该设备还包括用于使臭氧和TMA流动的供应管（232a）和（232b）和向反应管（203）供应气体的喷嘴（233）。 两个供应管（232a）和（232b）连接到设置在加热器（207）内部的喷嘴（233）内，反应管（203）内的温度低于晶片附近的温度 200），并且臭氧和TMA通过喷嘴（233）供应到反应管（203）中。

    MULTI-WINDING MOTOR
    53.
    发明申请
    MULTI-WINDING MOTOR 有权
    多功能电机

    公开(公告)号：US20060220486A1

    公开(公告)日：2006-10-05

    申请号：US11278025

    申请日：2006-03-30

    申请人： Toshihito Miyashita ,  Shintarou Koichi ,  Kazuyoshi Murata ,  Masanori Sakai

    发明人： Toshihito Miyashita ,  Shintarou Koichi ,  Kazuyoshi Murata ,  Masanori Sakai

    IPC分类号： H02K3/00

    CPC分类号： H02K3/28

    摘要： The present invention provides a multi-winding motor of which impedance unbalance between F-phase windings is improved. Two three-phase exciting windings Sa, Sb are wound on each of the magnetic pole sections of divided cores 9. Two kinds of discrete winding wirings A, B are wound together with the same winding number onto each of the magnetic pole sections 13A-13L of the divided cores 9. Divided cores 9 wound with the discrete winding wirings A, B are annularly disposed, and are connected in parallel with each other so that the discrete winding wirings are arranged in the order of A, B, A, B . . . within the same connection, and the exciting windings are star-connected to construct two three-phase exciting windings Sa, Sb.

    摘要翻译： 本发明提供了一种多绕组电动机，其中F相绕组之间的阻抗不平衡得到改善。 两个三相励磁绕组Sa，Sb缠绕在分芯3的每个磁极部分上。将两种分立绕组布线A，B以相同的绕组数卷绕在每个磁极部分13A- 13L的分割铁芯9.用分立的绕组配线A，B缠绕的分割磁芯9是环形设置的，并且彼此并联连接，使得分立的绕组布线按照A，B，A， B。 。 。 在相同的连接中，励磁绕组星形连接构成两个三相励磁绕组Sa，Sb。

    Novel abutted exchange bias design for sensor stabilization
    54.
    发明申请
    Novel abutted exchange bias design for sensor stabilization 失效
    传感器稳定的新型对接交换偏置设计

    公开(公告)号：US20060196039A1

    公开(公告)日：2006-09-07

    申请号：US11074244

    申请日：2005-03-04

    申请人： Masanori Sakai ,  Kunliang Zhang ,  Kenichi Takano ,  Chyu-Jiuh Torng ,  Yunfei Li ,  Po-Kang Wang

    发明人： Masanori Sakai ,  Kunliang Zhang ,  Kenichi Takano ,  Chyu-Jiuh Torng ,  Yunfei Li ,  Po-Kang Wang

    IPC分类号： G11B5/127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49021 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49048

    摘要： A hard bias (HB) structure for biasing a free layer in a MR sensor within a magnetic read head is comprised of a main biasing layer with a large negative magnetostriction (λS) value. Compressive stress in the device after lapping induces a strong in-plane anisotropy that effectively provides a longitudinal bias to stabilize the sensor. The main biasing layer is formed between two FM layers, and at least one AFM layer is disposed above the upper FM layer or below the lower FM layer. Additionally, there may be a Ta/Ni or Ta/NiFe seed layer as the bottom layer in the HB structure. Compared with a conventional abutted junction exchange bias design, the HB structure described herein results in higher output amplitude under similar asymmetry sigma and significantly decreases sidelobe occurrence. Furthermore, smaller MRWu with a similar track width is achieved since the main biasing layer acts as a side shield.

    摘要翻译： 用于偏置磁读头内的MR传感器中的自由层的硬偏置（HB）结构包括具有大的负磁致伸缩（λS S S S S）值的主偏置层。 研磨后装置中的压缩应力引起强的面内各向异性，其有效地提供纵向偏压以稳定传感器。 主偏置层形成在两个FM层之间，并且至少一个AFM层设置在上FM层上方或下FM层的下方。 另外，可以存在作为HB结构中的底层的Ta / Ni或Ta / NiFe种子层。 与传统的邻接结交换偏置设计相比，本文所述的HB结构在类似的不对称西格玛下产生更高的输出幅度，并显着降低旁瓣发生。 此外，由于主偏置层用作侧屏蔽，所以实现了具有相似轨道宽度的较小MRWu。

    Substrate processing apparatus
    56.
    发明申请
    Substrate processing apparatus 审中-公开
    基板加工装置

    公开(公告)号：US20060150905A1

    公开(公告)日：2006-07-13

    申请号：US10530527

    申请日：2003-10-06

    申请人： Masanori Sakai ,  Toru Kagaya ,  Nobuhito Shima

    发明人： Masanori Sakai ,  Toru Kagaya ,  Nobuhito Shima

    IPC分类号： C23C16/00

    CPC分类号： C23C16/455

    摘要： A substrate treating apparatus comprises a reaction chamber 6 forming a space for treating a substrate 7, and a gas reserving part 10 connected to the reaction chamber 6, having a gas supply pipe for supplying gas for treating the substrate 7 and a gas exhaust pipe for exhausting the gas inside the reaction chamber 6 and reserving gas supplied to the reaction chamber 6, and reserving the gas to be supplied to the reaction chamber 6 midway in the gas supply pipe, and a bypass line 11 bypassing the gas reserving part 10, the gas receiving part 10 being arranged parallel with the bypass line, and a control part 60 supplying the treating gas to the reaction chamber 6 by using either of the gas reserving part 10 and the bypass line 11 when the substrate 7 is treated.

    摘要翻译： 基板处理装置包括形成用于处理基板7的空间的反应室6和连接到反应室6的气体储存部10，具有用于供给用于处理基板7的气体的气体供给管和用于处理基板7的排气管 排出反应室6内的气体并储存供应到反应室6的气体，并将供给到气体供给管中途的反应室6的气体和旁通燃气保持部10的旁通管路11保持 气体接收部分10与旁路管线平行布置;以及控制部分60，当处理基板7时，通过使用气体储存部分10和旁通管线11中的任何一个将处理气体供应到反应室6。

    Network system in which plurality of image processing apparatuses are connected
    58.
    发明授权
    Network system in which plurality of image processing apparatuses are connected 失效
    连接有多个图像处理装置的网络系统

    公开(公告)号：US06775712B2

    公开(公告)日：2004-08-10

    申请号：US10209097

    申请日：2002-08-01

    申请人： Akihiko Sakai ,  Tadashi Suzuki ,  Masanori Sakai ,  Satoru Kutsuwada ,  Satoshi Kaneko ,  Masahito Yamamoto ,  Yoshinori Abe ,  Masahiro Kurahashi

    发明人： Akihiko Sakai ,  Tadashi Suzuki ,  Masanori Sakai ,  Satoru Kutsuwada ,  Satoshi Kaneko ,  Masahito Yamamoto ,  Yoshinori Abe ,  Masahiro Kurahashi

    IPC分类号： G06F1516

    CPC分类号： H04N1/00477 ,  H04N1/00204 ,  H04N1/00209 ,  H04N1/0035 ,  H04N1/00411 ,  H04N1/32122 ,  H04N1/32502 ,  H04N1/32512 ,  H04N1/32539 ,  H04N2201/0074 ,  H04N2201/0081 ,  H04N2201/0082 ,  H04N2201/0086 ,  H04N2201/0093 ,  H04N2201/0094 ,  H04N2201/3204 ,  H04N2201/3273

    摘要： The present invention is to allow display based on the setting positions of devices in selection of a desired device to be used, and facilitate selection considering the setting positions of the devices. The present invention can also display equipments so as to allow discrimination between an equipment included in an image processing apparatus and an equipment connected on a communication line. Equipments in a network environment are placed on the first floor (1F), the second floor (2F), and the third floor (3F) in a building and connected through a network (LAN 1300). For example, a computer (1310) collects device information including status information and setting position information from usable input/output devices. For example, status information representing “BUSY” and setting position information representing “3F-B block” are transferred from a virtual optical scanner (1302). The computer (1310) displays the connected input/output devices together with the setting position information obtained from the devices. An image processing apparatus (100) has various input/output devices including a reader unit (1), a printer unit (2), and an image input/output control unit (3). In addition, various input/output equipments (two optical scanner devices (1302, 1303) and three facsimile transmission/reception devices (1305, 1306, 1307)) are connected to the image processing apparatus (100) through a LAN interface unit (9) and the LAN (1300). A CPU (123) of a core unit (10) manages the input/output equipments to determine whether they are connected through the network. When a desired input/output equipment is to be selected, whether the input/output equipments are connected through the network is explicitly indicated.

    摘要翻译： 本发明是为了允许基于设备选择期望的设备的设置位置进行显示，并且考虑到设备的设置位置便于选择。 本发明还可以显示设备，以便允许区分包括在图像处理设备中的设备和连接在通信线路上的设备。 网络环境中的设备被放置在建筑物的一楼（1F），二楼（2F）和三楼（3F）上，并通过网络（LAN 1300）连接。 例如，计算机（1310）从可用的输入/输出设备收集包括状态信息和设置位置信息的设备信息。 例如，从虚拟光学扫描器（1302）传送表示“BUSY”的状态信息和表示“3F-B块”的设定位置信息。 计算机（1310）将连接的输入/输出设备与从设备获得的设置位置信息一起显示。 一种图像处理装置（100）具有包括读取器单元（1），打印机单元（2）和图像输入/输出控制单元（3）的各种输入/输出设备。 此外，通过LAN接口单元（9）将各种输入输出设备（两个光学扫描器设备（1302,1303）和三个传真发送/接收设备（1305,1306,1307））连接到图像处理设备（100） ）和LAN（1300）。 核心单元（10）的CPU（123）管理输入/输出设备以确定它们是否通过网络连接。 当选择所需的输入/输出设备时，是否明确指出输入/输出设备是否通过网络连接。

    Magnetoresistive effect sensor, thin-film magnetic head and thin-film wafer with the thin-film magnetic heads
    60.
    发明授权
    Magnetoresistive effect sensor, thin-film magnetic head and thin-film wafer with the thin-film magnetic heads 失效
    磁阻效应传感器，薄膜磁头和具有薄膜磁头的薄膜晶片

    公开(公告)号：US06426853B1

    公开(公告)日：2002-07-30

    申请号：US09440550

    申请日：1999-11-15

    申请人： Masanori Sakai ,  Ken-ichi Takano ,  Yuzuru Iwai

    发明人： Masanori Sakai ,  Ken-ichi Takano ,  Yuzuru Iwai

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  G01R33/093

    摘要： An MR sensor, a thin-film magnetic head and a thin-film wafer with a plurality of the thin-film magnetic heads having a MR multi-layered structure including a non-magnetic material layer, first and second ferromagnetic material layers (free and pinned layers) separated by the non-magnetic material layer, and an anti-ferromagnetic material layer formed adjacent to and in physical contact with one surface of the pinned layer, the one surface being on an opposite side of the pinned layer from the non-magnetic material layer, the multi-layered structure having ends in a direction parallel to a magnetically sensitive surface or an ABS, and longitudinal bias layers formed at both the ends of the MR multi-layered structure, for providing a longitudinal magnetic bias to the MR multi-layered structure. The MR multi-layered structure is shaped such that a magnetization direction of the pinned layer is inclined at an angle from an axis of easy magnetization of the pinned layer.

    摘要翻译： 一种MR传感器，薄膜磁头和具有多个薄膜磁头的薄膜晶片，具有包括非磁性材料层的MR多层结构，第一和第二铁磁材料层（游离和 由非磁性材料层分离的被钉扎层，以及与钉扎层的一个表面相邻并物理接触形成的反铁磁材料层，该一个表面位于与非磁性材料层的钉扎层相反的一侧， 磁性材料层，具有平行于磁敏表面或ABS的方向的端部的多层结构以及形成在MR多层结构的两端的纵向偏压层，用于向MR提供纵向磁偏置 多层结构。 MR多层结构被成形为使得被钉扎层的磁化方向与被钉扎层的易磁化轴成一定角度倾斜。