Solid-state imaging device
    51.
    发明申请

    公开(公告)号:US20070262241A1

    公开(公告)日:2007-11-15

    申请号:US11826927

    申请日:2007-07-19

    IPC分类号: H01L27/146

    摘要: The invention is regarding to solid-state imaging device. A solid-state imaging device consistent with the present invention includes, a plurality of unit cells on a semiconductor substrate of a first conductivity type, each unit cell including a photoelectric conversion unit comprising a photodiode having a diffusion layer of a second conductivity type and a signal scanning circuit unit; a trench isolation region for isolating the photoelectric conversion unit from the signal scanning circuit unit, the trench isolation region being formed in the semiconductor substrate; a first element-isolating diffusion layer of the first conductivity type formed under a bottom face of the trench isolation region down to a position deeper than the diffusion layer of the photodiode from the surface of the semiconductor substrate.

    Backlight unit including curved fluorescent lamp, and liquid crystal display apparatus including the backlight unit
    52.
    发明授权
    Backlight unit including curved fluorescent lamp, and liquid crystal display apparatus including the backlight unit 有权
    包括弯曲荧光灯的背光单元和包括背光单元的液晶显示装置

    公开(公告)号:US07258462B2

    公开(公告)日:2007-08-21

    申请号:US11112045

    申请日:2005-04-22

    IPC分类号: F21S4/00

    摘要: A backlight unit that includes: an outer container; a curved fluorescent lamp that is contained in the outer container and includes two electrodes and a glass bulb that has (i) a folded portion and (ii) two straight portions that extend in parallel with each other from the folded portion, and the two electrodes being respectively attached to two ends of the glass bulb; and an inverter operable to supply power for lighting to the curved fluorescent lamp. The inverter is disposed outside the outer container, and the curved fluorescent lamp is arranged so that the electrodes are at low positions and the folded portion is at a high position in the outer container when the backlight unit is erected vertically in use.

    摘要翻译: 一种背光单元,包括:外容器; 包含在外容器中并包括两个电极的弯曲荧光灯和具有(i)折叠部分和(ii)从折叠部分彼此平行延伸的两个直线部分的玻璃灯泡,并且两个电极 分别连接在玻璃灯泡的两端; 以及可操作以向所述弯曲荧光灯供应用于照明的电力的逆变器。 逆变器设置在外部容器的外侧,并且在背光单元在使用中垂直竖立时,弯曲的荧光灯被布置成电极处于低位置并且折叠部分处于外部容器中的高位置。

    CMOS (COMPLEMENTARY METAL OXIDE SEMICONDUCTOR) TYPE SOLID-STATE IMAGE PICKUP DEVICE USING N/P+ SUBSTRATE IN WHICH N-TYPE SEMICONDUCTOR LAYER IS LAMINATED ON P+ TYPE SUBSTRATE MAIN BODY
    54.
    发明申请
    CMOS (COMPLEMENTARY METAL OXIDE SEMICONDUCTOR) TYPE SOLID-STATE IMAGE PICKUP DEVICE USING N/P+ SUBSTRATE IN WHICH N-TYPE SEMICONDUCTOR LAYER IS LAMINATED ON P+ TYPE SUBSTRATE MAIN BODY 有权
    CMOS(补充金属氧化物半导体)类型固体状态图像拾取器件使用N + P +衬底,其中N型半导体层层合在P +型衬底上主体

    公开(公告)号:US20070108487A1

    公开(公告)日:2007-05-17

    申请号:US11558200

    申请日:2006-11-09

    IPC分类号: H01L31/113

    摘要: A solid-state image pickup device includes a semiconductor substrate including a substrate main body having P-type impurities and a first N-type semiconductor layer provided on the substrate main body, an image pickup area including a plurality of photoelectric converters in which the plurality of photoelectric converters include second N-type semiconductor layers, the second N-type semiconductor layers being provided on a surface portion of the first N-type semiconductor layer independently of one another, and a first peripheral circuit area including a first P-type semiconductor layer formed on the first N-type semiconductor layer. The solid-state image pickup device further includes a second peripheral circuit area including a second P-type semiconductor layer formed on the first N-type semiconductor layer and connected to the substrate main body.

    摘要翻译: 固态摄像装置包括:半导体衬底,包括具有P型杂质的衬底主体和设置在衬底主体上的第一N型半导体层;摄像区,包括多个光电转换器,其中多个 光电转换器包括第二N型半导体层,第二N型半导体层彼此独立地设置在第一N型半导体层的表面部分上,第一外围电路区域包括第一P型半导体 层,形成在第一N型半导体层上。 固体摄像装置还包括第二外围电路区域,其包括形成在第一N型半导体层上并连接到基板主体的第二P型半导体层。

    System and method for remote control
    56.
    发明申请
    System and method for remote control 失效
    远程控制系统和方法

    公开(公告)号:US20050123109A1

    公开(公告)日:2005-06-09

    申请号:US10846625

    申请日:2004-05-17

    摘要: In this invention, an apparatus of which the power supply is in the off state is remotely controlled through a communications network. Each of one or a plurality of controlled apparatus has a ROM for holding the MAC address of the controlled apparatus, and a network control IC that reads out the MAC address from the ROM and transmits it through a LAN to a control apparatus. The control apparatus receives the one or plurality of MAC addresses from the one or plurality of controlled apparatus through the LAN, stores the received one or plurality of MAC addresses in a cache memory and controls the one or plurality of controlled apparatus by using the one or plurality of MAC addresses stored in the cache memory.

    摘要翻译: 在本发明中,通过通信网络远程控制电源处于关闭状态的装置。 一个或多个受控装置中的每一个具有用于保持受控装置的MAC地址的ROM和从ROM读出MAC地址并通过LAN将其发送到控制装置的网络控制IC。 控制装置通过LAN从一个或多个受控装置接收一个或多个MAC地址,将所接收的一个或多个MAC地址存储在高速缓冲存储器中,并通过使用一个或多个受控装置 存储在高速缓冲存储器中的多个MAC地址。

    Cold-cathode fluorescent lamp
    57.
    发明授权

    公开(公告)号:US06800997B2

    公开(公告)日:2004-10-05

    申请号:US10106214

    申请日:2002-03-27

    IPC分类号: H01J6109

    CPC分类号: H01J61/067 H01J61/72

    摘要: The present invention has an object to provide a cold-cathode fluorescent lamp which can suppress sputtering caused by electric discharge and reduce consumption of mercury so as to achieve a longer lifetime even if a lamp current is large and a lighting tube has a small diameter. The cold-cathode fluorescent lamp according to the present invention is characterized in that a distance between the inner surface of the lighting tube and the outer surface of a cylindrical electrode is set such that electric discharge develops mainly on the inner surface of the cylindrical electrode. When the lighting tube has an inside diameter D1 of 1 to 6 mm and the maximum lamp current is 5 mA or more, an outside diameter D2 of the cylinder electrode is preferably set at D1−0.4 [mm]≦D2

    MOS-type solid state imaging device with high sensitivity
    59.
    发明授权
    MOS-type solid state imaging device with high sensitivity 失效
    高灵敏度的MOS型固态成像装置

    公开(公告)号:US06674470B1

    公开(公告)日:2004-01-06

    申请号:US08933975

    申请日:1997-09-19

    IPC分类号: H04N314

    摘要: A solid state imaging device comprises a plurality of unit cells formed in a surface region of a semiconductor substrate. Each of the unit cells comprises a photoelectric converter, an MOS-type read-out transistor for reading a signal from the photoelectric converter, an MOS-type amplifying transistor having a gate connected to a drain of the read-out transistor and for amplifying the signal read by the read-out transistor, a reset transistor having a source connected to the drain of the read-out transistor and for resetting a potential of a gate of the amplifying transistor, and an addressing element connected in series to the amplifying transistor and for selecting the unit cell. The read-out transistor is formed in a first device region in the semiconductor substrate. The reset transistor is formed in a second device region in the semiconductor substrate. The drain of the read-out transistor is connected to the source of the reset transistor through a wiring layer formed on the surface of the semiconductor substrate.

    摘要翻译: 固态成像装置包括形成在半导体衬底的表面区域中的多个单元电池。 每个单电池包括光电转换器,用于读取来自光电转换器的信号的MOS型读出晶体管,MOS型放大晶体管,其栅极连接到读出晶体管的漏极,并用于放大 由读出晶体管读取的信号,复位晶体管,其源极连接到读出晶体管的漏极,并用于复位放大晶体管的栅极的电位;以及寻址元件,串联连接到放大晶体管, 用于选择单元格。 读出晶体管形成在半导体衬底中的第一器件区域中。 复位晶体管形成在半导体衬底中的第二器件区域中。 读出晶体管的漏极通过形成在半导体衬底的表面上的布线层连接到复位晶体管的源极。

    Solid-state imaging device
    60.
    发明授权

    公开(公告)号:US06486498B2

    公开(公告)日:2002-11-26

    申请号:US09956044

    申请日:2001-09-20

    IPC分类号: H01L31062

    CPC分类号: H01L27/14689 H01L27/14609

    摘要: A solid-state imaging device includes a semiconductor substrate including a surface region of a second conductivity type, and plural unit pixels arranged in a matrix form on the surface region of the second conductivity type. Each of the unit pixels includes a first semiconductor region of a first conductivity type separated by a preset distance from the surface of the surface region in the depth direction and accumulates signal charges obtained by photo-electrical conversion of input light, and a gate electrode formed above the surface region, adjacent to the first semiconductor region and controlling readout of the signal charge accumulated in the first semiconductor region, end portions of the gate electrode and the first semiconductor region separated by a preset distance in a horizontal direction. Thus, the signal charge can be easily read-out and occurrence of thermal noise at the dark time, dark current noise, image-lag can be suppressed.