摘要:
Disclosed is a method for separating and purifying Ginkgolide C from root bark of ginkgo. The method comprises: (1) extracting the root bark of ginkgo with ethanol; (2) concentrating the resulting extract under vacuum to remove ethanol; (3) separating the concentrate by macroporous resin column chromatography; (4) after the concentrate being loaded on the column, washing the column with pure water to remove impurities, and then eluting the column with an ethanol solution; (5) concentrating the eluate under vacuum to dryness to obtain a yellow crude extract; (6) heating the crude extract in water to boiling to form a solution, and then refrigerating the solution; (7) concentrating the supernatant solution and filtering under vacuum to obtain a mixed crude crytal of ginkgolides; (8) dissolving the crude crystal in ethanol to form a supersaturated solution, refrigerating and crystallizing the solution to remove Ginkgolides A and B; (9) concentrating and recrystallizing the mother liquor to obtain a crystal of Ginkgolide C; and (10) recrystallizing the crystal with ethanol several times to obtain a high-purity crystal of Ginkgolide C.
摘要:
An embodiment of the present invention is a technique to program a fuse. A program circuit generates first and second currents to program the fuse. The second current is higher than the first current. A control circuit controls generating the first and second currents in succession.
摘要:
A microelectronic die including a CMOS ring oscillator thereon, and a method of using the same. The microelectronic die includes: a die substrate; and a plurality of CMOS ring oscillators on the die substrate, the ring oscillators being disposed at regions of the die substrate that are adapted to exhibit differing strain responses to package-included stress with respect to one another. A method of determining mechanical stress on a die which includes providing a die substrate in a CMOS ring oscillator on a die substrate. A frequency counter is coupled to the ring oscillator to measure a frequency of the ring oscillator to generate a frequency data signal therefrom. The frequency data signal is used to determine the mechanical stress on the die at a location of the ring oscillator.
摘要:
A semiconductor substrate having metal oxide semiconductor (MOS) devices, such as an integrated circuit die, is mechanically coupled to a stress structure to apply a stress that improves the performance of at least a portion of the MOS devices on the die.
摘要:
A micromachined strain gauge comprising a plastically deformable piezoresistive microstructure formed on a surface of a substrate so that deformation of the substrate plastically deforms the microstructure to thereby change the resistance of the microstructure. The stress in the substrate can be determined from the change in the resistance of the microstructure.
摘要:
A three terminal electrical bistable device that includes a tri-layer composed of an electrically conductive mixed layer sandwiched between two layers of low conductivity organic material that is interposed between a top electrode and a bottom electrode. The conducting mixed layer serves as the middle electrode. The device includes two memory cells composed of electrode/organic layer/mixed layer, where the interfaces between the electrically conductive mixed layer and the low conductivity organic layer exhibit bistable behavior.
摘要:
A microelectronic die including a CMOS ring oscillator thereon, and a method of using the same. The microelectronic die includes: a die substrate; and a plurality of CMOS ring oscillators on the die substrate, the ring oscillators being disposed at regions of the die substrate that are adapted to exhibit differing strain responses to package-induced stress with respect to one another.
摘要:
In one embodiment of the invention, an integrated circuit package includes an integrated circuit, a package substrate, a first bump, a second bump and a shunt to provide for current distribution and reliability redundancy. The first and second bumps provide a first and second electric current pathway between the integrated circuit and package substrate. The shunt provides a third electric current pathway between the first bump and the second bump.
摘要:
A downflow catalytic cracking reactor, comprising the following components: catalyst delivery pipe (1), reactor top cover (2), feed nozzle (3), reactor vessel (6), downflow reaction pipe (9), the upper end of the outer body is close connected to top cover (2) along the direction of circumference; the bottom of the outer wall body is close connected to the outer wall of the downflow reaction pipe; the upper section of the downflow reaction pipe is located inside the reaction vessel, while the lower section extends from the bottom of the outer body; feed nozzle (3) is located on the top cover (2) and/or side wall of the reactor vessel (6) with the outlet of the feed nozzle being above the inlet of the downflow reaction pipe; catalyst delivery pipe (1) is fixedly joined to the reactor vessel and in communication with catalyst lifting zone (7) formed by the reaction vessel and the downflow reaction pipe.