公开(公告)号：US07524754B2

公开(公告)日：2009-04-28

申请号：US11320314

申请日：2005-12-27

申请人： Mark Bohr ,  Jun He ,  Fay Hua ,  Dustin P. Wood

发明人： Mark Bohr ,  Jun He ,  Fay Hua ,  Dustin P. Wood

IPC分类号： H01L23/48

CPC分类号： H01L23/5382 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/056 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： In one embodiment of the invention, an integrated circuit package includes an integrated circuit, a package substrate, a first bump, a second bump and a shunt to provide for current distribution and reliability redundancy. The first and second bumps provide a first and second electric current pathway between the integrated circuit and package substrate. The shunt provides a third electric current pathway between the first bump and the second bump.

摘要翻译： 在本发明的一个实施例中，集成电路封装包括集成电路，封装基板，第一凸块，第二凸块和分流器，以提供电流分配和可靠性冗余。 第一和第二凸起在集成电路和封装衬底之间提供第一和第二电流通路。 分流器在第一凸块和第二凸块之间提供第三电流通路。

公开(公告)号：US07208830B2

公开(公告)日：2007-04-24

申请号：US10883419

申请日：2004-06-30

申请人： Mark Bohr ,  Jun He ,  Fay Hua ,  Dustin P. Wood

发明人： Mark Bohr ,  Jun He ,  Fay Hua ,  Dustin P. Wood

IPC分类号： H01L23/48

CPC分类号： H01L23/5382 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/056 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： In one embodiment of the invention, an integrated circuit package includes an integrated circuit, a package substrate, a first bump, a second bump and a shunt to provide for current distribution and reliability redundancy. The first and second bumps provide a first and second electric current pathway between the integrated circuit and package substrate. The shunt provides a third electric current pathway between the first bump and the second bump.

摘要翻译： 在本发明的一个实施例中，集成电路封装包括集成电路，封装基板，第一凸块，第二凸块和分流器，以提供电流分配和可靠性冗余。 第一和第二凸起在集成电路和封装衬底之间提供第一和第二电流通路。 分流器在第一凸块和第二凸块之间提供第三电流通路。

公开(公告)号：US20060001178A1

公开(公告)日：2006-01-05

申请号：US10883419

申请日：2004-06-30

申请人： Mark Bohr ,  Jun He ,  Fay Hua ,  Dustin Wood

发明人： Mark Bohr ,  Jun He ,  Fay Hua ,  Dustin Wood

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： H01L23/5382 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/056 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： In one embodiment of the invention, an integrated circuit package includes an integrated circuit, a package substrate, a first bump, a second bump and a shunt to provide for current distribution and reliability redundancy. The first and second bumps provide a first and second electric current pathway between the integrated circuit and package substrate. The shunt provides a third electric current pathway between the first bump and the second bump.

公开(公告)号：US20060097375A1

公开(公告)日：2006-05-11

申请号：US11320314

申请日：2005-12-27

申请人： Mark Bohr ,  Jun He ,  Fay Hua ,  Dustin Wood

发明人： Mark Bohr ,  Jun He ,  Fay Hua ,  Dustin Wood

IPC分类号： H01L23/02

CPC分类号： H01L23/5382 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/056 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： In one embodiment of the invention, an integrated circuit package includes an integrated circuit, a package substrate, a first bump, a second bump and a shunt to provide for current distribution and reliability redundancy. The first and second bumps provide a first and second electric current pathway between the integrated circuit and package substrate. The shunt provides a third electric current pathway between the first bump and the second bump.

公开(公告)号：US08441118B2

公开(公告)日：2013-05-14

申请号：US12589409

申请日：2009-10-22

申请人： Fay Hua

发明人： Fay Hua

IPC分类号： H01L23/04

CPC分类号： H01L23/49816 ,  H01L21/4846 ,  H01L21/486 ,  H01L23/36 ,  H01L23/49827 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/1141 ,  H01L2224/11436 ,  H01L2224/1147 ,  H01L2224/1152 ,  H01L2224/11848 ,  H01L2224/11849 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13294 ,  H01L2224/133 ,  H01L2224/13311 ,  H01L2224/13316 ,  H01L2224/13339 ,  H01L2224/13344 ,  H01L2224/13347 ,  H01L2224/13411 ,  H01L2224/13416 ,  H01L2224/13439 ,  H01L2224/13444 ,  H01L2224/13447 ,  H01L2224/13499 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/27436 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/9211 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2224/16225 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/0105 ,  H01L2224/11 ,  H01L2224/27 ,  H01L2224/81 ,  H01L2224/83

摘要： A nano-sized metal particle composite includes a first metal that has a particle size of about 50 nanometer or smaller. A wire interconnect is in contact with a reflowed nanosolder and has the same metal or alloy composition as the reflowed nanosolder. A microelectronic package is also disclosed that uses the reflowed nanosolder composition. A method of assembling a microelectronic package includes preparing a wire interconnect template. A computing system includes a nanosolder composition coupled to a wire interconnect.

公开(公告)号：US20100259890A1

公开(公告)日：2010-10-14

申请号：US12822951

申请日：2010-06-24

申请人： Tom Fitzgerald ,  Carl Deppisch ,  Fay Hua

发明人： Tom Fitzgerald ,  Carl Deppisch ,  Fay Hua

IPC分类号： G06F1/20 ,  H05K7/20 ,  H01B1/02

CPC分类号： C22C21/00 ,  B23K35/0244 ,  B23K35/24 ,  B23K35/286 ,  B23K35/40 ,  C22C28/00 ,  H01L23/42 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/16152 ,  H01L2924/00 ,  H01L2224/0401

摘要： A method includes providing a mixture of molten indium and molten aluminum, and agitating the mixture while reducing its temperature until the aluminum changes from liquid phase to solid phase, forming particles distributed within the molten indium. Agitation of the mixture sufficiently to maintain the aluminum substantially suspended in the molten aluminum continues while further reducing the temperature of the mixture until the indium changes from a liquid phase to a solid phase. A metallic composition is formed, including indium and particles of aluminum suspended within the indium, the aluminum particles being substantially free from oxidation.The metallic (solder) composition can be used to form an assembly, including an integrated circuit (IC) device, at least a first thermal component disposed adjacent to the IC device, and a solder TIM interposed between and thermally coupled with each of the IC device and the first thermal component.

摘要翻译： 一种方法包括提供熔融铟和熔融铝的混合物，并搅拌混合物同时降低其温度，直到铝从液相变成固相，形成分布在熔融铟内的颗粒。 使混合物充分搅拌以保持铝基本上悬浮在熔融铝中，同时进一步降低混合物的温度，直到铟从液相变成固相。 形成金属组合物，其包括铟和悬浮在铟内的铝颗粒，铝颗粒基本上没有氧化。 金属（焊料）组合物可以用于形成包括集成电路（IC）装置的组件，至少设置在IC器件附近的第一热分量，以及夹在每个IC之间并热耦合的焊料TIM 装置和第一热元件。

公开(公告)号：US20100047971A1

公开(公告)日：2010-02-25

申请号：US12589409

申请日：2009-10-22

申请人： Fay Hua

发明人： Fay Hua

IPC分类号： H01L21/60 ,  H01L21/50

CPC分类号： H01L23/49816 ,  H01L21/4846 ,  H01L21/486 ,  H01L23/36 ,  H01L23/49827 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/1141 ,  H01L2224/11436 ,  H01L2224/1147 ,  H01L2224/1152 ,  H01L2224/11848 ,  H01L2224/11849 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13294 ,  H01L2224/133 ,  H01L2224/13311 ,  H01L2224/13316 ,  H01L2224/13339 ,  H01L2224/13344 ,  H01L2224/13347 ,  H01L2224/13411 ,  H01L2224/13416 ,  H01L2224/13439 ,  H01L2224/13444 ,  H01L2224/13447 ,  H01L2224/13499 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/27436 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/9211 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2224/16225 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/0105 ,  H01L2224/11 ,  H01L2224/27 ,  H01L2224/81 ,  H01L2224/83

摘要： A nano-sized metal particle composite includes a first metal that has a particle size of about 50 nanometer or smaller. A wire interconnect is in contact with a reflowed nanosolder and has the same metal or alloy composition as the reflowed nanosolder. A microelectronic package is also disclosed that uses the reflowed nanosolder composition. A method of assembling a microelectronic package includes preparing a wire interconnect template. A computing system includes a nanosolder composition coupled to a wire interconnect.

摘要翻译： 纳米尺寸金属颗粒复合材料包括粒径为约50纳米或更小的第一金属。 电线互连与回流纳米溶剂接触并具有与回流纳米溶剂相同的金属或合金组成。 还公开了使用回流纳米涂料组合物的微电子封装。 组装微电子封装的方法包括制备导线互连模板。 计算系统包括耦合到电线互连的纳米涂料组合物。

公开(公告)号：US20080090405A1

公开(公告)日：2008-04-17

申请号：US11540027

申请日：2006-09-29

申请人： Tom Fitzgerald ,  Carl Deppisch ,  Fay Hua

发明人： Tom Fitzgerald ,  Carl Deppisch ,  Fay Hua

IPC分类号： H01L21/44

CPC分类号： C22C21/00 ,  B23K35/0244 ,  B23K35/24 ,  B23K35/286 ,  B23K35/40 ,  C22C28/00 ,  H01L23/42 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/16152 ,  H01L2924/00 ,  H01L2224/0401

摘要： A method includes providing a mixture of molten indium and molten aluminum, and agitating the mixture while reducing its temperature until the aluminum changes from liquid phase to solid phase, forming particles distributed within the molten indium. Agitation of the mixture sufficiently to maintain the aluminum substantially suspended in the molten aluminum continues while further reducing the temperature of the mixture until the indium changes from a liquid phase to a solid phase. A metallic composition is formed, including indium and particles of aluminum suspended within the indium, the aluminum particles being substantially free from oxidation.The metallic (solder) composition can be used to form an assembly, including an integrated circuit (IC) device, at least a first thermal component disposed adjacent to the IC device, and a solder TIM interposed between and thermally coupled with each of the IC device and the first thermal component.

摘要翻译： 一种方法包括提供熔融铟和熔融铝的混合物，并搅拌混合物同时降低其温度，直到铝从液相变成固相，形成分布在熔融铟内的颗粒。 使混合物充分搅拌以保持铝基本上悬浮在熔融铝中，同时进一步降低混合物的温度，直到铟从液相变成固相。 形成金属组合物，其包括铟和悬浮在铟内的铝颗粒，铝颗粒基本上没有氧化。 金属（焊料）组合物可以用于形成包括集成电路（IC）装置的组件，至少设置在IC器件附近的第一热分量，以及夹在每个IC之间并热耦合的焊料TIM 装置和第一热元件。

公开(公告)号：US20050153523A1

公开(公告)日：2005-07-14

申请号：US11073277

申请日：2005-03-04

申请人： Fay Hua

发明人： Fay Hua

IPC分类号： B23K35/26 ,  H01L23/485 ,  H05K3/34 ,  H01L21/44

CPC分类号： H01L24/10 ,  B23K35/262 ,  B23K2101/42 ,  H01L24/13 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01061 ,  H01L2924/01063 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H05K3/3436 ,  H05K3/3463 ,  H01L2924/00 ,  H01L2224/05599

摘要： Lead-free solders comprising 85-96% tin (Sn) and 4-15% Indium (In) by weight percentage (wt. %) and exemplary uses of the same are disclosed. The Sn—In solder undergoes a martensitic phase change when it is cooled from a reflow temperature to room temperature. As a result, residual stresses that would normally occur due to solder strain caused by relative movement between joined components are substantially reduced. Typically, the relative movement results from a coefficient of thermal expansion (CTE) mismatch between the joined components. The disclosed exemplary uses include flip-chip assembly and IC package to circuit board mounting, such as ball grid array packages.

摘要翻译： 公开了包含85-96％锡（Sn）和4-15％铟（In）重量百分比（重量％）的无铅焊料及其示例性用途。 Sn-In焊料从回流温度冷却至室温时，会发生马氏体相变。 结果，由于由连接的部件之间的相对运动引起的焊料应变通常会发生的残余应力显着降低。 通常，相对运动由连接的部件之间的热膨胀系数（CTE）失配产生。 所公开的示例性用途包括倒装芯片组装和IC封装到电路板安装，例如球栅阵列封装。

公开(公告)号：US20050121775A1

公开(公告)日：2005-06-09

申请号：US10726558

申请日：2003-12-04

申请人： Thomas Fitzgerald ,  Carl Deppisch ,  Fay Hua

发明人： Thomas Fitzgerald ,  Carl Deppisch ,  Fay Hua

IPC分类号： H01L21/56 ,  H01L23/10 ,  H01L23/36 ,  H01L23/42

CPC分类号： H01L23/42 ,  H01L21/563 ,  H01L23/36 ,  H01L2924/0002 ,  H01L2924/00

摘要： Devices and systems including a heat spreader with possibly controlled thermal expansion. For example, an integral heat spreader may include an insert formed of a high thermal conductivity material with a first coefficient of thermal expansion, and a ring formed of a stiff material with a second coefficient of thermal expansion, wherein the second coefficient of thermal expansion is smaller or significantly smaller than the first coefficient of thermal expansion. An integral heat spreader may optionally include, for example, a plating, a coating, or a patch, and may be included, for example, in a semiconductor device.

摘要翻译： 装置和系统包括具有可控制的热膨胀的散热器。 例如，整体散热器可以包括由具有第一热膨胀系数的高热导率材料形成的插入件和由具有第二热膨胀系数的刚性材料形成的环，其中第二热膨胀系数为 小于或明显小于第一热膨胀系数。 整体散热器可以任选地包括例如电镀，涂层或贴片，并且可以包括在例如半导体器件中。