公开(公告)号：US07875555B2

公开(公告)日：2011-01-25

申请号：US11947038

申请日：2007-11-29

Applicant: Lee Chen ,  Merritt Funk

Inventor： Lee Chen ,  Merritt Funk

IPC: H01L21/302

CPC classification number: H01L21/32136 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/31116 ,  H01L21/32137

Abstract: A method for treating a substrate with plasma over a wide pressure range is described. The method comprises exposing the substrate to a low pressure plasma in a process chamber. Further, the method comprises exposing the substrate to a high pressure plasma in the process chamber.

Abstract translation: 描述了在宽压力范围内用等离子体处理衬底的方法。 该方法包括将基板暴露于处理室中的低压等离子体。 此外，该方法包括将衬底暴露于处理室中的高压等离子体。

公开(公告)号：US07772544B2

公开(公告)日：2010-08-10

申请号：US11869656

申请日：2007-10-09

Applicant: Lee Chen ,  Merritt Funk

Inventor： Lee Chen ,  Merritt Funk

IPC: H05H3/02

CPC classification number: H05H3/06

Abstract: Method and system for producing a neutral beam source is described. The neutral beam source comprises a plasma generation system for forming a first plasma in a first plasma region, a plasma heating system for heating electrons from the first plasma region in a second plasma region to form a second plasma, and a neutralizer grid for neutralizing ion species from the second plasma in the second plasma region. Furthermore, the neutral beam source comprises a pumping system that enables use of the neutral beam source for semiconductor processing applications, such as etching processes.

Abstract translation: 描述了用于生产中性束源的方法和系统。 中性束源包括用于在第一等离子体区域中形成第一等离子体的等离子体产生系统，用于在第二等离子体区域中从第一等离子体区域加热电子以形成第二等离子体的等离子体加热系统，以及用于中和离子的中和器栅格 来自第二等离子体区域中的第二等离子体的物质。 此外，中性束源包括泵送系统，其能够使用中性束源用于半导体处理应用，例如蚀刻工艺。

公开(公告)号：US20100081285A1

公开(公告)日：2010-04-01

申请号：US12242065

申请日：2008-09-30

Applicant: Lee Chen ,  Merritt Funk ,  Radha Sundararajan

Inventor： Lee Chen ,  Merritt Funk ,  Radha Sundararajan

IPC: H01L21/3065

CPC classification number: H01L21/0273 ,  G03F7/40 ,  H01L21/32139

Abstract: The invention can provide apparatus and methods of processing a substrate in real-time using subsystems and processing sequences created to improve the etch resistance of photoresist materials. In addition, the improved photoresist layer can be used to more accurately control gate and/or spacer critical dimensions (CDs), to control gate and/or spacer CD uniformity, and to eliminate line edge roughness (LER) and line width roughness (LWR).

Abstract translation: 本发明可以提供使用子系统和制造的处理序列来实时处理衬底的装置和方法，以提高光致抗蚀剂材料的耐蚀刻性。 此外，改进的光致抗蚀剂层可用于更精确地控制栅极和/或间隔物临界尺寸（CD），以控制栅极和/或间隔区CD均匀性，并且消除线边缘粗糙度（LER）和线宽粗糙度（LWR ）。

公开(公告)号：US20100036514A1

公开(公告)日：2010-02-11

申请号：US12186668

申请日：2008-08-06

Applicant: Merritt Funk ,  Radha Sundararajan ,  Asao Yamashita ,  Daniel Prager ,  Hyung Joo Lee

Inventor： Merritt Funk ,  Radha Sundararajan ,  Asao Yamashita ,  Daniel Prager ,  Hyung Joo Lee

IPC: G06F19/00

CPC classification number: G05B17/02 ,  Y10S438/924

Abstract: The invention provides a method of processing a wafer using multilayer processing sequences and Multi-Layer/Multi-Input/Multi-Output (MLMIMO) models and libraries that can include one or more measurement procedures, one or more Poly-Etch (P-E) sequences, and one or more metal-gate etch sequences. The MLMIMO process control uses dynamically interacting behavioral modeling between multiple layers and/or multiple process steps. The multiple layers and/or the multiple process steps can be associated with the creation of lines, trenches, vias, spacers, contacts, and gate structures that can be created using isotropic and/or anisotropic etch processes.

Abstract translation: 本发明提供了一种使用多层处理序列和多层/多输入/多输出（MLMIMO）模型以及可以包括一个或多个测量程序，一个或多个聚蚀刻（PE）序列 ，以及一个或多个金属栅极蚀刻序列。 MLMIMO过程控制使用多层和/或多个过程步骤之间的动态交互行为建模。 多层和/或多个工艺步骤可以与可以使用各向同性和/或各向异性蚀刻工艺产生的线，沟槽，通孔，间隔物，接触和栅极结构的产生相关联。

公开(公告)号：US07623978B2

公开(公告)日：2009-11-24

申请号：US11394592

申请日：2006-03-30

Applicant: Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

Inventor： Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

IPC: G01N37/00 ,  G01R31/26

CPC classification number: H01L21/76811 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76813 ,  H01L22/12

Abstract: A method of assessing damage of a dual damascene structure includes obtaining a wafer after the wafer has been processed using a dual damascene process. A first damage-assessment procedure is performed on the wafer using an optical metrology process to gather damage-assessment data for a first set of measurements sites on the wafer. For each measurement site in the first set of measurement sites, the optical metrology process determines an amount of damage of a damaged area of a periodic grating in the measurement site. The damage-assessment data includes the amount of damage determined by the optical metrology process. A first damage-assessment map is created for the dual damascene process. The first damage-assessment includes the damage-assessment data and the locations of the first set of measurement sites on the wafer. One or more values in the damage-assessment map are compared to damage-assessment limits established for the dual damascene process to identify the wafer as a damaged or undamaged wafer.

Abstract translation: 评估双镶嵌结构的损伤的方法包括在使用双镶嵌工艺处理晶片之后获得晶片。 使用光学测量过程在晶片上执行第一损伤评估程序以收集晶片上的第一组测量位置的损伤评估数据。 对于第一组测量点中的每个测量位置，光学测量过程确定测量位置中周期性光栅的损坏区域的损坏量。 损伤评估数据包括由光学计量过程确定的损伤量。 为双镶嵌工艺创建了第一个损伤评估图。 第一次损伤评估包括损伤评估数据和晶片上第一组测量位置的位置。 将损伤评估图中的一个或多个值与为双镶嵌工艺建立的损伤评估限制进行比较，以将晶片识别为损坏或未损坏的晶片。

公开(公告)号：US07619731B2

公开(公告)日：2009-11-17

申请号：US11396210

申请日：2006-03-30

Applicant: Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

Inventor： Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

IPC: G01N21/00

CPC classification number: G01N21/9501 ,  G01N21/4788 ,  G01N21/95607 ,  H01L22/12

Abstract: A method of measuring a damaged structure formed on a semiconductor wafer using optical metrology includes directing an incident beam on the damaged structure. A diffracted beam is received from the damaged structure. The received diffracted beam is processed to determine a profile of an undamaged portion of the damaged structure and to measure an amount of dielectric damage of the damaged structure.

Abstract translation: 使用光学计量测量在半导体晶片上形成的损坏结构的方法包括将入射光束引导到损坏的结构上。 从损坏的结构接收衍射光束。 处理接收的衍射光束以确定受损结构的未损伤部分的轮廓并且测量损坏结构的电介质损伤的量。

公开(公告)号：US07576018B2

公开(公告)日：2009-08-18

申请号：US11684957

申请日：2007-03-12

Applicant: Merritt Funk

Inventor： Merritt Funk

IPC: H01L21/00

CPC classification number: H01L21/3065 ,  H01L21/02071 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67253 ,  H01L21/6838 ,  Y10S438/905 ,  Y10S438/935

Abstract: A method is provided to cause deformation of a substrate during processing of the substrate. The method comprises supporting a substrate on a substrate support in a vacuum chamber for processing; providing backside gas through inlet ports of each of a plurality of groups of ports lying in a respective plurality of areas across the substrate support to a space between the substrate support and the substrate, each of said areas of the substrate support having at least one backside gas inlet port connected to a supply of backside gas and at least one outlet port connected to a vacuum exhaust system; and separately controlling the pressure of the backside gas at different ones of the ports of the plurality to control separately, in areas around the respective ones of said ports, the local pressure force exerted on the backside of the substrate, by separately dynamically controlling at least one valve affecting gas flow to a port of each of said areas while separately dynamically controlling at least one other valve affecting gas flow from the remaining plurality of ports of each of said areas surrounding said port to which gas is introduced.

Abstract translation: 提供了一种在衬底加工期间引起衬底变形的方法。 该方法包括将基板支撑在真空室中用于处理的基板支撑件上; 通过位于基板支撑件的相应多个区域中的多个端口中的每一个的入口端口到基板支撑件和基板之间的空间来提供背侧气体，基板支撑件的每个所述区域具有至少一个背面 连接到后侧气体供应的气体入口和连接到真空排气系统的至少一个出口; 并且分别控制多个端口中的不同端口处的背侧气体的压力，在各个端口周围的区域中分别控制施加在基板的背面上的局部压力，通过分别动态地控制至少 一个阀影响到每个所述区域的端口的气体流动，同时单独地动态地控制影响来自围绕所述引入气体的所述端口的每个所述区域的剩余多个端口的气体流的至少一个其他阀。

公开(公告)号：US07567700B2

公开(公告)日：2009-07-28

申请号：US11390469

申请日：2006-03-28

Applicant: Merritt Funk ,  Radha Sundararajan ,  Daniel Joseph Prager ,  Wesley Natzle

Inventor： Merritt Funk ,  Radha Sundararajan ,  Daniel Joseph Prager ,  Wesley Natzle

IPC: G06K9/00

CPC classification number: G03F7/70625 ,  G03F7/70525

Abstract: A method of processing a wafer is presented that includes creating a pre-processing measurement map using measured metrology data for the wafer including metrology data for at least one isolated structure on the wafer, metrology data for at least one nested structure on the wafer, or mask data. At least one pre-processing prediction map is calculated for the wafer. A pre-processing confidence map is calculated for the wafer. The pre-processing confidence map includes a set of confidence data for the plurality of dies on the wafer. A prioritized measurement site is determined when the confidence data for one or more dies is not within the confidence limits. A new measurement recipe that includes the prioritized measurement site is then created.

Abstract translation: 提出了一种处理晶片的方法，其包括使用测量的用于晶片的测量数据创建预处理测量图，包括晶片上的至少一个隔离结构的测量数据，晶片上的至少一个嵌套结构的度量数据，或 掩码数据。 为晶片计算至少一个预处理预测图。 计算晶片的预处理置信图。 预处理置信图包括晶片上的多个管芯的一组置信数据。 当一个或多个管芯的置信度数据不在置信限度内时，确定优先测量点。 然后创建包含优先测量站点的新测量配方。

公开(公告)号：US20080227227A1

公开(公告)日：2008-09-18

申请号：US11684818

申请日：2007-03-12

Applicant: Radha Sundararajan ,  Lee Chen ,  Merritt Funk

Inventor： Radha Sundararajan ,  Lee Chen ,  Merritt Funk

IPC: H01L21/306 ,  H01L21/66

CPC classification number: H01L22/20

Abstract: A method and apparatus are provided to control the radial or non-radial temperature distribution across a substrate during processing to compensate for non-uniform effects, including radial and angular non-uniformities arising from system variations, or process variations, or both. The temperature is controlled, preferably dynamically, by flowing backside gas differently across different areas on a wafer supporting chuck to vary heat conduction across the wafer. Backside gas flow, of helium, for example, is dynamically varied across the chuck to control the uniformity of processing of the wafer. Ports in the support are grouped, and gas to or from the groups is separately controlled by different valves responsive to a controller that controls gas pressure in each of the areas to spatially and preferably dynamically control wafer temperature to compensate for system and process non-uniformities.

Abstract translation: 提供了一种方法和装置，以在处理期间控制衬底上的径向或非径向温度分布，以补偿不均匀的影响，包括由系统变化产生的径向和角度不均匀性或过程变化，或两者。 优选动态地控制温度，通过在晶片支撑卡盘上的不同区域上不同地流动背面气体来改变晶片上的热传导。 例如，氦的背侧气体流动在卡盘之间动态变化以控制晶片的处理的均匀性。 支撑中的端口被分组，并且来自组的气体由响应于控制器的不同阀单独控制，所述控制器在空间上控制每个区域中的气体压力，并且优选地动态地控制晶片温度以补偿系统和过程的不均匀性 。

公开(公告)号：US20080183413A1

公开(公告)日：2008-07-31

申请号：US11668654

申请日：2007-01-30

Applicant: Sachin Deshpande ,  Merritt Funk

Inventor： Sachin Deshpande ,  Merritt Funk

IPC: G06F19/00

CPC classification number: G03F7/70875 ,  G03F7/70491 ,  G03F7/70525 ,  G03F7/70691

Abstract: A method for facilitating an ODP measurement of a semiconductor wafer. The method includes obtaining real time wafer characteristic data for a measurement site on said wafer and detecting a measured diffraction signal from a structure within the measurement site of the wafer. The measured diffraction signal is matched with a simulated diffraction signal stored in a wafer characteristic dependent profile library. A hypothetical profile structure associated with the simulated diffraction signal in the wafer characteristic dependent profile library is then identified. The real time wafer characteristic data is used to facilitate at least one of the matching and identifying.

Abstract translation: 一种用于促进半导体晶片的ODP测量的方法。 该方法包括获得在所述晶片上的测量位置的实时晶片特征数据，并且从晶片的测量位置内的结构检测测量的衍射信号。 测量的衍射信号与存储在晶片特征依赖型谱库中的模拟衍射信号相匹配。 然后识别与晶片特性相关型材库中的模拟衍射信号相关联的假设轮廓结构。 实时晶片特征数据用于促进匹配和识别中的至少一个。