公开(公告)号：US08721833B2

公开(公告)日：2014-05-13

申请号：US13366341

申请日：2012-02-05

Applicant: Zhiying Chen ,  Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Radha Sundararajan

Inventor： Zhiying Chen ,  Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Radha Sundararajan

IPC: H01L21/306

CPC classification number: H01J37/32495 ,  H01J37/32504

Abstract: A replaceable chamber element for use in a plasma processing system, such as a plasma etching system, is described. The replaceable chamber element includes a chamber component configured to be exposed to plasma in a plasma processing system, wherein the chamber component is fabricated of a ferroelectric material.

Abstract translation: 描述了用于诸如等离子体蚀刻系统的等离子体处理系统中的可替换室元件。 可替换室元件包括腔室部件，其被构造成在等离子体处理系统中暴露于等离子体，其中室部件由铁电材料制成。

公开(公告)号：US08501499B2

公开(公告)日：2013-08-06

申请号：US13073237

申请日：2011-03-28

Applicant: Radha Sundararajan ,  Merritt Funk ,  Lee Chen ,  Barton Lane

Inventor： Radha Sundararajan ,  Merritt Funk ,  Lee Chen ,  Barton Lane

IPC: H01L21/00 ,  H01L21/461 ,  H01L21/302

CPC classification number: H01L22/20 ,  H01J37/32082 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/32139 ,  H01L21/6708 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention provides a method of processing a wafer using Ion Energy (IE)-related multilayer process sequences and Ion Energy Controlled Multi-Input/Multi-Output (IEC-MIMO) models and libraries that can include one or more measurement procedures, one or more IEC-etch sequences, and one or more Ion Energy Optimized (IEO) etch procedures. The IEC-MIMO process control uses dynamically interacting behavioral modeling between multiple layers and/or multiple IEC etch sequences. The multiple layers and/or the multiple IEC etch sequence can be associated with the creation of lines, trenches, vias, spacers, contacts, and gate structures that can be created using IEO etch procedures.

Abstract translation: 本发明提供了一种使用离子能量（IE）相关的多层过程序列和离子能量控制多输入/多输出（IEC-MIMO）模型和可包括一个或多个测量过程的库来处理晶片的方法，其中一个或多个 更多的IEC蚀刻序列和一个或多个离子能量优化（IEO）蚀刻程序。 IEC-MIMO过程控制使用多层和/或多个IEC蚀刻序列之间的动态交互行为建模。 多层和/或多个IEC蚀刻序列可以与可以使用IEO蚀刻工艺创建的线，沟槽，通孔，间隔物，触点和栅极结构的产生相关联。

公开(公告)号：US07674636B2

公开(公告)日：2010-03-09

申请号：US11684818

申请日：2007-03-12

Applicant: Radha Sundararajan ,  Lee Chen ,  Merritt Funk

Inventor： Radha Sundararajan ,  Lee Chen ,  Merritt Funk

IPC: H01L21/66

CPC classification number: H01L22/20

Abstract: A method and apparatus are provided to control the radial or non-radial temperature distribution across a substrate during processing to compensate for non-uniform effects, including radial and angular non-uniformities arising from system variations, or process variations, or both. The temperature is controlled, preferably dynamically, by flowing backside gas differently across different areas on a wafer supporting chuck to vary heat conduction across the wafer. Backside gas flow, of helium, for example, is dynamically varied across the chuck to control the uniformity of processing of the wafer. Ports in the support are grouped, and gas to or from the groups is separately controlled by different valves responsive to a controller that controls gas pressure in each of the areas to spatially and preferably dynamically control wafer temperature to compensate for system and process non-uniformities.

Abstract translation: 提供了一种方法和装置，以在处理期间控制衬底上的径向或非径向温度分布，以补偿不均匀的影响，包括由系统变化产生的径向和角度不均匀性或过程变化，或两者。 优选动态地控制温度，通过在晶片支撑卡盘上的不同区域上不同地流动背面气体来改变晶片上的热传导。 例如，氦的背侧气体流动在卡盘之间动态变化以控制晶片的处理的均匀性。 支撑中的端口被分组，并且来自组的气体由响应于控制器的不同阀单独控制，所述控制器在空间上控制每个区域中的气体压力，并且优选地动态地控制晶片温度以补偿系统和过程的不均匀性 。

公开(公告)号：US20080223873A1

公开(公告)日：2008-09-18

申请号：US11684853

申请日：2007-03-12

Applicant: Lee Chen ,  Radha Sundararajan ,  Merritt Funk

Inventor： Lee Chen ,  Radha Sundararajan ,  Merritt Funk

IPC: C23F1/02

CPC classification number: H01J37/32642 ,  H01J37/3244 ,  H01J37/32449 ,  Y10T137/0324 ,  Y10T428/215

Abstract: A method and system for dynamically controlling a process chemistry above a substrate is described. The system for adjusting the process chemistry comprises a ring configured to surround a peripheral edge of a substrate in a vacuum processing system. The ring comprises one or more gas distribution passages formed within the ring and configured to supply an additive process gas through an upper surface of the ring to the peripheral region of the substrate, wherein the one or more gas distribution passages are configured to be coupled to one or more corresponding gas supply passages formed within the substrate holder upon which the ring rests.

Abstract translation: 描述了用于动态地控制衬底上方的工艺化学物质的方法和系统。 用于调整工艺化学的系统包括配置成在真空处理系统中围绕衬底的周边边缘的环。 所述环包括一个或多个气体分配通道，所述气体分配通道形成在所述环内并且构造成通过所述环的上表面将添加的处理气体供应到所述基底的周边区域，其中所述一个或多个气体分配通道被配置为与 一个或多个对应的气体供给通道，其形成在所述基座保持器内，所述环支撑在所述基座支架上。

公开(公告)号：US08847159B2

公开(公告)日：2014-09-30

申请号：US13433071

申请日：2012-03-28

Applicant: Lee Chen ,  Barton Lane ,  Merritt Funk ,  Jianping Zhao ,  Radha Sundararajan

Inventor： Lee Chen ,  Barton Lane ,  Merritt Funk ,  Jianping Zhao ,  Radha Sundararajan

IPC: G01T1/185 ,  H01J49/48 ,  H01J37/32 ,  H05H1/00

CPC classification number: H01J37/32935 ,  H01J49/488 ,  H05H1/0081 ,  Y10T29/49002

Abstract: An ion energy analyzer for determining an ion energy distribution of a plasma and comprising an entrance grid, a selection grid, and an ion collector. The entrance grid includes a first plurality of openings dimensioned to be less than a Debye length for the plasma. The ion collector is coupled to the entrance grid via a first voltage source. The selection grid is positioned between the entrance grid and the ion collector and is coupled to the entrance grid via a second voltage source. An ion current meter is coupled to the ion collector to measure an ion flux onto the ion collector and transmit a signal related thereto.

Abstract translation: 一种用于确定等离子体的离子能量分布并包括入口格栅，选择栅格和离子收集器的离子能量分析器。 入口格栅包括尺寸小于等离子体的德拜长度的第一多个开口。 离子收集器通过第一电压源耦合到入口电网。 选择网格位于入口格栅和离子收集器之间，并通过第二电压源耦合到入口格栅。 离子电流计耦合到离子收集器以测量离子收集器上的离子通量并传输与其相关的信号。

公开(公告)号：US20120248311A1

公开(公告)日：2012-10-04

申请号：US13433088

申请日：2012-03-28

Applicant: Merritt Funk ,  Lee Chen ,  Barton Lane ,  Jianping Zhao ,  Radha Sundararajan

Inventor： Merritt Funk ,  Lee Chen ,  Barton Lane ,  Jianping Zhao ,  Radha Sundararajan

IPC: G01T1/16 ,  B23K31/02 ,  H01S4/00

CPC classification number: H01J37/32935 ,  H01J49/488 ,  H05H1/0081 ,  Y10T29/49002

Abstract: A process by which an ion energy analyzer is manufactured includes processing a first substrate to form an entrance grid having a first channel and a first plurality of openings extending therethrough. A second substrate is processed to form a selection grid having a second channel therein and a second plurality of openings extending therethrough. A third substrate is processed to form an ion collector having a third channel therein. The entrance grid is operably coupled to, and electrically isolated from, the selection grid, which is, in turn, operably coupled to, and electrically isolated from, the ion collector.

Abstract translation: 制造离子能量分析器的过程包括处理第一基底以形成具有第一通道和延伸穿过其中的第一多个开口的入口格栅。 处理第二衬底以形成其中具有第二通道的选择栅格和延伸穿过其中的第二多个开口。 处理第三衬底以形成其中具有第三通道的离子收集器。 入口栅格可操作地耦合到选择栅格并与之电隔离，所述选择栅格又可操作地耦合到离子收集器并与电离隔离。

公开(公告)号：US20110174606A1

公开(公告)日：2011-07-21

申请号：US12688755

申请日：2010-01-15

Applicant: Merritt Funk ,  Lee Chen ,  Radha Sundararajan

Inventor： Merritt Funk ,  Lee Chen ,  Radha Sundararajan

IPC: B01J19/08

CPC classification number: H01J37/3244 ,  H01J37/32009 ,  H01J37/3233 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32449 ,  H01J37/32458 ,  H01J37/32532 ,  H01J2237/338

Abstract: The invention can provide apparatus and methods of processing a substrate in real-time using a Quasi-Neutral Beam (Q-NB) curing system to improve the etch resistance of photoresist layer. In addition, the improved photoresist layer can be used to more accurately control gate and/or spacer critical dimensions (CDs), to control gate and/or spacer CD uniformity, and to eliminate line edge roughness (LER) and line width roughness (LWR).

Abstract translation: 本发明可以提供使用准中性束（Q-NB）固化系统实时处理衬底以提高光致抗蚀剂层的耐蚀刻性的设备和方法。 此外，改进的光致抗蚀剂层可用于更精确地控制栅极和/或间隔物临界尺寸（CD），以控制栅极和/或间隔区CD均匀性，并且消除线边缘粗糙度（LER）和线宽粗糙度（LWR ）。

公开(公告)号：US08816281B2

公开(公告)日：2014-08-26

申请号：US13433088

申请日：2012-03-28

Applicant: Merritt Funk ,  Lee Chen ,  Barton Lane ,  Jianping Zhao ,  Radha Sundararajan

Inventor： Merritt Funk ,  Lee Chen ,  Barton Lane ,  Jianping Zhao ,  Radha Sundararajan

IPC: G01T1/16 ,  H01J37/32 ,  H05H1/00 ,  H01J49/48

CPC classification number: H01J37/32935 ,  H01J49/488 ,  H05H1/0081 ,  Y10T29/49002

Abstract: A process by which an ion energy analyzer is manufactured includes processing a first substrate to form an entrance grid having a first channel and a first plurality of openings extending therethrough. A second substrate is processed to form a selection grid having a second channel therein and a second plurality of openings extending therethrough. A third substrate is processed to form an ion collector having a third channel therein. The entrance grid is operably coupled to, and electrically isolated from, the selection grid, which is, in turn, operably coupled to, and electrically isolated from, the ion collector.

Abstract translation: 制造离子能量分析器的过程包括处理第一基底以形成具有第一通道和延伸穿过其中的第一多个开口的入口格栅。 处理第二衬底以形成其中具有第二通道的选择栅格和延伸穿过其中的第二多个开口。 处理第三衬底以形成其中具有第三通道的离子收集器。 入口栅格可操作地耦合到选择栅格并与之电隔离，所述选择栅格又可操作地耦合到离子收集器并与电离隔离。

公开(公告)号：US20120248322A1

公开(公告)日：2012-10-04

申请号：US13433078

申请日：2012-03-28

Applicant: Merritt Funk ,  Lee Chen ,  Barton Lane ,  Jianping Zhao ,  Radha Sundararajan

Inventor： Merritt Funk ,  Lee Chen ,  Barton Lane ,  Jianping Zhao ,  Radha Sundararajan

IPC: G01T1/185

CPC classification number: H01J37/32935 ,  H01J49/488 ,  H05H1/0081 ,  Y10T29/49002

Abstract: A method of generating a signal representing with an ion energy analyzer for use in determining an ion energy distribution of a plasma. The ion energy analyzer, used for determining an ion energy distribution of a plasma, includes a first grid and a second grid that is spaced away from and electrically isolated from the first grid. The first grid forms a first surface of the ion energy analyzer and is positioned to be exposed to the plasma. The first grid includes a first plurality of openings, which are dimensioned to be less than a Debye length for the plasma. A voltage source and an ion current meter are operably coupled to the second grid, the latter of which is configured to measure an ion flux onto the ion collector and to transmit a signal that represents the measured ion flux. The method includes selectively and variably biasing the second grid relative to the first grid.

Abstract translation: 一种产生用离子能分析仪表示的信号的方法，用于确定等离子体的离子能量分布。 用于确定等离子体的离子能量分布的离子能量分析器包括与第一格栅隔开并与之隔离的第一格栅和第二栅格。 第一栅格形成离子能量分析器的第一表面并定位成暴露于等离子体。 第一栅格包括第一多个开口，其尺寸被设计成小于等离子体的德拜长度。 电压源和离子电流计可操作地耦合到第二栅极，第二栅极被配置为测量离子收集器上的离子通量并传输表示所测量的离子通量的信号。 该方法包括相对于第一格栅选择性地和可变地偏置第二格栅。

公开(公告)号：US20100081285A1

公开(公告)日：2010-04-01

申请号：US12242065

申请日：2008-09-30

Applicant: Lee Chen ,  Merritt Funk ,  Radha Sundararajan

Inventor： Lee Chen ,  Merritt Funk ,  Radha Sundararajan

IPC: H01L21/3065

CPC classification number: H01L21/0273 ,  G03F7/40 ,  H01L21/32139

Abstract: The invention can provide apparatus and methods of processing a substrate in real-time using subsystems and processing sequences created to improve the etch resistance of photoresist materials. In addition, the improved photoresist layer can be used to more accurately control gate and/or spacer critical dimensions (CDs), to control gate and/or spacer CD uniformity, and to eliminate line edge roughness (LER) and line width roughness (LWR).

Abstract translation: 本发明可以提供使用子系统和制造的处理序列来实时处理衬底的装置和方法，以提高光致抗蚀剂材料的耐蚀刻性。 此外，改进的光致抗蚀剂层可用于更精确地控制栅极和/或间隔物临界尺寸（CD），以控制栅极和/或间隔区CD均匀性，并且消除线边缘粗糙度（LER）和线宽粗糙度（LWR ）。