Abstract:
A PWM generation module generates a PWM data signal used to control a light emitting diode (LED) driver for one or more strings of LEDs of a display device. The PWM data signal is synchronized with the frame boundaries of the video content being displayed. The PWM generation module can configure the PWM data signal such that a new PWM cycle is initiated at the start of each successive frame, and further whereby those PWM cycles that would be prematurely terminated at frame boundaries are instead driven at a constant reference level until the frame boundary. With this configuration, a substantially linear average light intensity can be achieved across frames, thereby reducing or eliminating display distortion that is often present in other PWM cycle synchronization techniques. The PWM generation module can use a self-learning process to make adjustments to the expected number of completeable PWM cycles per frame in response to dynamic changes in the frame rate, PWM frequency, or other related display parameters.
Abstract:
In one embodiment the present invention includes a system for identifying an unauthorized display of content. The system includes a preprocessor, an inserter, an observation device, and a subscriber information device. The preprocessor device preprocesses the content for subsequent insertion of semi-visible information. The inserter device inserts a semi-visible watermark into the content as having been preprocessed by the preprocessor device. The semi-visible watermark corresponds to a subscriber identifier. The observation device executes processing, including receiving an input from an observer that observes a display of the content that includes the semi-visible watermark. The input corresponds to the semi visible watermark. The processing further includes processing the input to generate an input result. The subscriber information device stores subscriber identifiers and identifies a particular subscriber by comparing the input result and the subscriber identifiers.
Abstract:
Power management in a light emitting diode (LED) system having a plurality of LED strings is disclosed. A voltage source provides an output voltage to drive the LED strings. An LED driver monitors the tail voltages of the active LED strings to identify the minimum, or lowest, tail voltage and adjusts the output voltage of the voltage source based on the lowest tail voltage. The LED driver can adjust the output voltage so as to maintain the lowest tail voltage at or near a predetermined threshold voltage so as to ensure that the output voltage is sufficient to properly drive each active LED string with a regulated current in view of pulse width modulation (PWM) performance requirements without excessive power consumption.
Abstract:
Techniques for dynamic headroom control in a light emitting diode (LED) system are disclosed. An output voltage is provided to drive a plurality of LED strings. A feedback controller monitors the tail voltages of the LED strings to identify the minimum tail voltage and adjusts the output voltage based on the lowest tail voltage. The LED strings grouped into subsets and the feedback controller is segmented such that, for a certain duration, a minimum tail voltage is determined for each subset. The minimum tail voltages of the subsets are used to determine the overall minimum tail voltage of the plurality of LED strings for the certain duration so as to control the output voltage in the following duration. The segments of the feedback controller can be implemented in separate integrated circuit (IC) packages, thereby facilitating adaptation to different numbers of LED strings by integrating the corresponding number of IC packages.
Abstract:
According to one exemplary embodiment, a voltage up-conversion circuit includes a modulated voltage generator circuit, where the modulated voltage generator circuit is configured to receive an input voltage and generate a modulated voltage, and where the modulated voltage generator circuit includes at least one transistor. The voltage up-conversion circuit further includes a switching circuit coupled to the modulated voltage generator circuit, where the switching circuit is configured to couple the modulated voltage to a load capacitor when the modulated voltage is at a high level and decouple the modulated voltage to the load capacitor when the modulated voltage is at a low level. In the voltage up-conversion circuit, the load capacitor reaches a voltage greater a breakdown voltage of the at least one transistor in the modulated voltage generator circuit. The breakdown voltage can be a reliability breakdown voltage.
Abstract:
A circuit can provide an approximately constant resistance value that is virtually independent of process and temperature variations. A current control circuit may use a device that tracks the changes in a corresponding device over process and temperature variations. As a result, the behavior of device may be used to help determine the control information provided to device in order to maintain an approximately constant resistance Rm over process and temperature variations. The approximately constant resistance Rm may be used to provide an approximately constant current ILED. A wide variety of applications, not just LED drivers, may benefit from the use of an approximately constant resistance and/or current.
Abstract:
An interleaver has an input polarization beam displacer, a birefringent filter assembly in optical communication with the input polarization beam displacer, a first output polarization beam displacer in optical communication with the birefringent filter assembly and a second output polarization beam displacer optical communication with the first output polarization beam displacer. The birefringent filter assembly preferably comprises at least one birefringent filter stage, wherein each birefringent filter stage comprises a first filter polarization beam displacer, a second filter polarization beam displacer and at least one reflector configured so as to direct light from first filter polarization beam displacer to the second filter of polarization beam displacer.
Abstract:
Interconnects in sub-micron and sub-half-micron integrated circuit devices are fabricated using a dual damascene process incorporating a low-k dielectric. A dual-damascene structure can be implemented without the necessity of building a single damascene base, and without CMP of the low-k dielectric. This structure simplifies the manufacturing process, reduces cost, and effectively reduces intra-level and inter-level capacitance, resistivity, and noise related to substrate coupling. In accordance with a further aspect of the present invention, a modified silicon oxide material such as silsesquioxane is used for the low-k dielectric in conjunction with silicon dioxide cap layers, allowing an improved process window and simplifying the etching process.
Abstract:
An improved dielectric material having pores formed therein and a method for forming the material are disclosed. The material is formed of a polymer. Pores within the polymer are formed by forming solid organic particles within the polymer and eventually vaporizing the particles to form pores within the polymer.
Abstract:
A semiconductor process and structure is provided for use in single or dual damascene metallization processes. A thin metal layer which serves as an etch stop and masking layer is deposited upon a first dielectric layer. Then, a second dielectric layer is deposited upon the thin metallization masking layer. The thin metallization masking layer provides an etch stop to form the bottom of the in-laid conductor grooves. In a dual damascene process, the thin metallization masking layer leaves open the via regions. Thus, the conductor grooves above the metallization masking layer and the via regions may be etched in the first and second dielectrics in one step. In a single damascene process, the thin metallization etch masking layer may cover the via regions. The etch stop and masking layer can be formed from any conductive or non-conductive materials whose chemical, mechanical, thermal and electrical properties are compatible with the process and circuit performance.