公开(公告)号：US08766250B2

公开(公告)日：2014-07-01

申请号：US12950186

申请日：2010-11-19

申请人： Akiharu Miyanaga ,  Junichiro Sakata ,  Masayuki Sakakura ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Shunpei Yamazaki

发明人： Akiharu Miyanaga ,  Junichiro Sakata ,  Masayuki Sakakura ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Shunpei Yamazaki

IPC分类号： H01L29/10

CPC分类号： H01L29/7869 ,  H01L29/10 ,  H01L29/41733

摘要： A thin film transistor including an oxide semiconductor with favorable electrical characteristics is provided. The thin film transistor includes a gate electrode provided over a substrate, a gate insulating film provided over the gate electrode, an oxide semiconductor film provided over the gate electrode and on the gate insulating film, a metal oxide film provided on the oxide semiconductor film, and a metal film provided on the metal oxide film. The oxide semiconductor film is in contact with the metal oxide film, and includes a region whose concentration of metal is higher than that of any other region in the oxide semiconductor film (a high metal concentration region). In the high metal concentration region, the metal contained in the oxide semiconductor film may be present as a crystal grain or a microcrystal.

摘要翻译： 提供了包括具有良好电特性的氧化物半导体的薄膜晶体管。 薄膜晶体管包括设置在基板上的栅极电极，设置在栅极上的栅极绝缘膜，设置在栅电极和栅极绝缘膜上的氧化物半导体膜，设置在氧化物半导体膜上的金属氧化物膜， 以及设置在金属氧化物膜上的金属膜。 氧化物半导体膜与金属氧化物膜接触，并且包括金属的浓度高于氧化物半导体膜中的任何其它区域（高金属浓度区域）的区域。 在高金属浓度区域中，包含在氧化物半导体膜中的金属可以作为晶粒或微晶存在。

公开(公告)号：US08728883B2

公开(公告)日：2014-05-20

申请号：US13297474

申请日：2011-11-16

申请人： Shunpei Yamazaki ,  Masahiro Takahashi ,  Tetsunori Maruyama

发明人： Shunpei Yamazaki ,  Masahiro Takahashi ,  Tetsunori Maruyama

IPC分类号： H01L21/84 ,  H01L29/66

CPC分类号： H01L29/06 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0259 ,  H01L29/36 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

摘要： A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. An oxide semiconductor film which can have a first crystal structure by heat treatment and an oxide semiconductor film which can have a second crystal structure by heat treatment are formed so as to be stacked, and then heat treatment is performed; accordingly, crystal growth occurs with the use of an oxide semiconductor film having the second crystal structure as a seed, so that an oxide semiconductor film having the first crystal structure is formed. An oxide semiconductor film formed in this manner is used for an active layer of the transistor.

摘要翻译： 通过向其中使用氧化物半导体膜的通道的晶体管提供稳定的电特性来制造高度可靠的半导体器件。 通过热处理可以具有第一晶体结构的氧化物半导体膜和通过热处理可以具有第二晶体结构的氧化物半导体膜被形成为堆叠，然后进行热处理; 因此，通过使用具有第二晶体结构的氧化物半导体膜作为种子发生晶体生长，从而形成具有第一晶体结构的氧化物半导体膜。 以这种方式形成的氧化物半导体膜用于晶体管的有源层。

公开(公告)号：US08686425B2

公开(公告)日：2014-04-01

申请号：US13584840

申请日：2012-08-14

申请人： Shunpei Yamazaki ,  Takuya Hirohashi ,  Masahiro Takahashi ,  Takashi Shimazu

发明人： Shunpei Yamazaki ,  Takuya Hirohashi ,  Masahiro Takahashi ,  Takashi Shimazu

IPC分类号： H01L31/112 ,  H01L21/00

CPC分类号： H01L29/66742 ,  H01L21/02422 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02502 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02667 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/7869

摘要： A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.

摘要翻译： 可以使用较大的衬底，并且可以通过形成具有高结晶度的氧化物半导体层来制造具有期望的高场敏性迁移率的晶体管，由此大尺寸显示装置，高性能半导体器件， 等可以投入实际使用。 在衬底上形成第一多组分氧化物半导体层，并在其上形成单组分氧化物半导体层; 然后通过在500℃至1000℃（包括端值）进行热处理从表面向内部进行晶体生长，优选550℃至750℃，从而使第一多组分氧化物半导体层 包括单晶区域和形成包括单晶区域的单组分氧化物半导体层; 并且包括单晶区域的第二多分量氧化物半导体层堆叠在包括单晶区域的单组分氧化物半导体层上。

公开(公告)号：US08669556B2

公开(公告)日：2014-03-11

申请号：US13307398

申请日：2011-11-30

申请人： Shunpei Yamazaki ,  Masashi Tsubuku ,  Kengo Akimoto ,  Hiroki Ohara ,  Tatsuya Honda ,  Takatsugu Omata ,  Yusuke Nonaka ,  Masahiro Takahashi ,  Akiharu Miyanaga

发明人： Shunpei Yamazaki ,  Masashi Tsubuku ,  Kengo Akimoto ,  Hiroki Ohara ,  Tatsuya Honda ,  Takatsugu Omata ,  Yusuke Nonaka ,  Masahiro Takahashi ,  Akiharu Miyanaga

IPC分类号： H01L29/04

CPC分类号： H01L29/78696 ,  H01L29/045 ,  H01L29/1033 ,  H01L29/247 ,  H01L29/7869 ,  H01L29/78693

摘要： An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.

摘要翻译： 提供了具有更稳定的导电性的氧化物半导体膜。 此外，通过使用氧化物半导体膜提供具有稳定的电特性和高可靠性的半导体器件。 氧化物半导体膜包括结晶区域，并且结晶区域包括其中a-b平面基本上平行于膜的表面并且c轴基本上垂直于膜的表面的晶体; 氧化物半导体膜具有稳定的导电性，并且相对于可见光，紫外线等的照射而言更加电稳定。 通过使用这种用于晶体管的氧化物半导体膜，可以提供具有稳定电特性的高可靠性半导体器件。

公开(公告)号：US08642412B2

公开(公告)日：2014-02-04

申请号：US12906175

申请日：2010-10-18

申请人： Shunpei Yamazaki ,  Kunihiko Suzuki ,  Masahiro Takahashi

发明人： Shunpei Yamazaki ,  Kunihiko Suzuki ,  Masahiro Takahashi

IPC分类号： H01L21/385

CPC分类号： H01L21/02664 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L23/564 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object is to provide a semiconductor device with stable electric characteristics in which an oxide semiconductor is used. An impurity such as hydrogen or moisture (e.g., a hydrogen atom or a compound containing a hydrogen atom such as H2O) is eliminated from an oxide semiconductor layer with use of a halogen element typified by fluorine or chlorine, so that the impurity concentration in the oxide semiconductor layer is reduced. A gate insulating layer and/or an insulating layer provided in contact with the oxide semiconductor layer can be formed to contain a halogen element. In addition, a halogen element may be attached to the oxide semiconductor layer through plasma treatment under an atmosphere of a gas containing a halogen element.

摘要翻译： 本发明的目的是提供一种其中使用氧化物半导体的稳定电特性的半导体器件。 使用以氟或氯为代表的卤素元素，从氧化物半导体层中除去氢或水分等杂质（例如氢原子或含有氢原子的化合物，例如H 2 O），使得杂质浓度 氧化物半导体层减少。 可以形成与氧化物半导体层接触设置的栅极绝缘层和/或绝缘层以含有卤素元素。 此外，卤素元素可以在含有卤素元素的气体的气氛下通过等离子体处理附着到氧化物半导体层。

公开(公告)号：USD697928S1

公开(公告)日：2014-01-21

申请号：US29371666

申请日：2011-06-28

申请人： Mitsuo Okumura ,  Motoki Higashide ,  Masahiro Takahashi

设计人： Mitsuo Okumura ,  Motoki Higashide ,  Masahiro Takahashi

公开(公告)号：US08608855B2

公开(公告)日：2013-12-17

申请号：US11790383

申请日：2007-04-25

申请人： Nobuharu Ohsawa ,  Ryoji Nomura ,  Masahiro Takahashi

发明人： Nobuharu Ohsawa ,  Ryoji Nomura ,  Masahiro Takahashi

IPC分类号： C23C16/00

CPC分类号： C23C16/448 ,  C23C14/243 ,  C23C14/26 ,  H05B3/03

摘要： The present invention provides an evaporation device for which maintenance is readily conducted, and further, provides an electrode cover which can prevent an evaporation material from being adhered to electrodes. Moreover, the present invention provides an evaporation device including an evaporation chamber; a holding portion for holding an object to be treated; an evaporation source; an electrode; an electrode cover; and a power supply, in which the evaporation chamber includes the holding portion in an upper portion, and includes the evaporation source, the electrode, and the electrode cover in a lower portion; the electrode cover covers at least a part of an exposed surface of the electrode; the electrode and the power supply are electrically connected.

摘要翻译： 本发明提供了一种容易进行维护的蒸发装置，并且还提供一种能够防止蒸发材料粘附到电极上的电极盖。 此外，本发明提供一种蒸发装置，其包括蒸发室; 用于保持待处理物体的保持部分; 蒸发源; 电极 电极盖; 以及电源，其中蒸发室在上部包括保持部分，并且在下部包括蒸发源，电极和电极盖; 电极盖覆盖电极的暴露表面的至少一部分; 电极和电源电连接。

公开(公告)号：US08530285B2

公开(公告)日：2013-09-10

申请号：US12976388

申请日：2010-12-22

申请人： Shunpei Yamazaki ,  Takuya Hirohashi ,  Masahiro Takahashi ,  Takashi Shimazu

发明人： Shunpei Yamazaki ,  Takuya Hirohashi ,  Masahiro Takahashi ,  Takashi Shimazu

IPC分类号： H01L21/00 ,  H01L21/336 ,  H01L27/108

CPC分类号： H01L29/66742 ,  H01L21/02422 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02502 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02667 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/7869

摘要： A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.

公开(公告)号：US08421962B2

公开(公告)日：2013-04-16

申请号：US12746310

申请日：2008-12-03

申请人： Tatsuro Ishitobi ,  Hideaki Yamagata ,  Koji Arai ,  Masatoshi Oba ,  Masahiro Takahashi ,  Masayuki Uchida

发明人： Tatsuro Ishitobi ,  Hideaki Yamagata ,  Koji Arai ,  Masatoshi Oba ,  Masahiro Takahashi ,  Masayuki Uchida

IPC分类号： G02F1/1335

CPC分类号： G02B5/201 ,  G02B5/223 ,  G02F1/133512 ,  G02F1/133516 ,  G02F1/13394 ,  G02F2201/121

摘要： There is provided a color filter which can be manufactured by a simplified process and which will not short-circuit an electrode of a TFT substrate. The color filter includes a substrate, and a red layer, a green layer and a blue layer, formed on the substrate. When forming the green layer and the blue layer, these layers are not only formed on the substrate, but also laminated on the red layer to form a spacer comprised of the green layer and the blue layer, laminated on the red layer. The color filter further includes a transparent electrode layer which covers the substrate, the red layer, the green layer, the blue layer and the spacer, and an insulating black matrix layer formed on predetermined areas of the transparent electrode layer.

摘要翻译： 提供了可以通过简化的工艺制造并且不会使TFT基板的电极短路的滤色器。 滤色器包括在基板上形成的基板和红色层，绿色层和蓝色层。 当形成绿色层和蓝色层时，这些层不仅形成在基板上，而且层叠在红色层上以形成层叠在红色层上的由绿色层和蓝色层组成的间隔物。 滤色器还包括覆盖基板，红色层，绿色层，蓝色层和间隔物的透明电极层和形成在透明电极层的预定区域上的绝缘黑矩阵层。

公开(公告)号：US20130063585A1

公开(公告)日：2013-03-14

申请号：US13604186

申请日：2012-09-05

申请人： Hirofumi Watanabe ,  Masato Kajimoto ,  Masashi Kimoto ,  Masahiro Takahashi ,  Seiji Miyama

发明人： Hirofumi Watanabe ,  Masato Kajimoto ,  Masashi Kimoto ,  Masahiro Takahashi ,  Seiji Miyama

IPC分类号： H04N7/18

CPC分类号： G02B21/367 ,  G02B21/16

摘要： An information processing apparatus includes a storage unit, a determination unit, and a generation unit. The storage unit stores a plurality of partial images obtained by taking images with respect to a subject so that a plurality of image taking areas are overlapped with each other and relative positional displacement information of two adjacent partial images out of the plurality of partial images, the positional displacement information being calculated for each of the two adjacent partial images. The determination unit determines at least one display partial image for generating a display area image from the plurality of partial images, the display area image being an image of an area displayed as an image of the subject. The generation unit connects, when a plurality of display partial images are determined, the plurality of display partial images on the basis of the positional displacement information, to generate the display area image.

摘要翻译： 信息处理装置包括存储单元，确定单元和生成单元。 存储单元存储通过对对象拍摄图像而获得的多个部分图像，使得多个图像拍摄区域彼此重叠，并且从多个部分图像中的两个相邻局部图像的相对位置位移信息， 为两个相邻部分图像中的每一个计算位置位移信息。 确定单元确定用于从多个部分图像生成显示区域图像的至少一个显示部分图像，显示区域图像是作为被摄体的图像显示的区域的图像。 当确定多个显示部分图像时，生成单元基于位置偏移信息连接多个显示部分图像，以生成显示区域图像。