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公开(公告)号：US20060292799A1
公开(公告)日：2006-12-28
申请号：US11511441
申请日：2006-08-29
申请人： Takashi Nakabayashi
发明人： Takashi Nakabayashi
IPC分类号： H01L21/336 , H01L29/76
CPC分类号： H01L27/105 , H01L27/1052 , H01L27/10873 , H01L27/10894
摘要： A memory embedded semiconductor device according to the present invention has a memory region having a memory transistor and a logic region having a logic transistor each provided in a common semiconductor substrate. The logic transistor has a gate electrode provided on the semiconductor substrate and source/drain diffusion layers formed in the semiconductor substrate each having a silicide film formed thereon. On the other hand, the memory transistor has a gate electrode provided on the semiconductor substrate and source/drain diffusion layers formed in the semiconductor substrate each having a silicide film formed thereon to be thinner than the silicide film formed on each of the source/drain diffusion layers of the logic transistor.
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公开(公告)号：US20060076600A1
公开(公告)日：2006-04-13
申请号：US11188866
申请日：2005-07-26
IPC分类号： H01L29/94
CPC分类号： H01L21/02186 , H01L21/02271 , H01L21/31122 , H01L21/318 , H01L21/32135 , H01L27/10811 , H01L27/10888 , H01L27/10894 , H01L28/60
摘要： In a method for fabricating a semiconductor device according to the present invention, a groove is formed in a second interlayer insulating film, and then a storage electrode is formed which covers bottom and side surfaces of the groove. A capacitor insulating film is formed on the storage electrode, and a CVD method at a low temperature of 400° C. or lower and annealing with ammonia are repeated to form a TiOxNy film on the capacitor insulating film. A TiN film is formed on the TiOxNy film, and the TiN film is etched using the TiOxNy film as a stopper. The exposed TiOxNy film is then removed to form a plate electrode made of the TiOxNy film and the TiN film.
摘要翻译： 在根据本发明的半导体器件的制造方法中，在第二层间绝缘膜中形成凹槽，然后形成覆盖凹槽的底部和侧表面的存储电极。 在存储电极上形成电容器绝缘膜，并且在400℃或更低的低温和用氨退火的CVD方法被重复以形成TiO 2 x N y / SUB>电容器绝缘膜上。 在TiO 2膜层上形成TiN膜，并使用TiO 2 X N y膜蚀刻TiN膜， / SUB膜作为塞子。 然后除去暴露的TiO 2，N 2 O 3膜，以形成由TiO 2，N 2 O 3， 薄膜和TiN薄膜。
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公开(公告)号：US06280888B1
公开(公告)日：2001-08-28
申请号：US09608168
申请日：2000-06-30
申请人： Takashi Nakabayashi , Koji Matsuoka
发明人： Takashi Nakabayashi , Koji Matsuoka
IPC分类号： G03F900
摘要： Transmitting portions of a phase-shifting mask include plural first transmitting areas periodically arranged along a first direction and a second direction and a second transmitting area provided in an area surrounded with adjacent four first transmitting areas among the plural first transmitting areas. The first transmitting areas are formed by recessing a board so that a phase difference of substantially 180 degrees in exposure light can be caused between adjacent first transmitting areas. A phase difference of substantially 90 degrees in the exposure light is caused between the second transmitting area and the surrounding first transmitting areas. Thus, isolated patterns arranged at high density can be formed correspondingly to the first transmitting areas and the second transmitting area.
摘要翻译： 相移掩模的发送部分包括沿着第一方向和第二方向周期性排列的多个第一发送区域和设置在多个第一发送区域中的相邻的四个第一发送区域所包围的区域中的第二发送区域。 第一透射区域通过凹陷板形成，使得在相邻的第一透射区域之间可以引起曝光光中的大致180度的相位差。 在第二透射区域和周围的第一透射区域之间产生大致90度的曝光光的相位差。 因此，可以对应于第一发送区域和第二发送区域形成以高密度排列的隔离图案。
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54.发明授权Method of manufacturing electronic device using phase-shifting mask with multiple phase-shift regions 失效使用具有多个相移区域的移相掩模制造电子器件的方法
公开(公告)号：US6114095A
公开(公告)日：2000-09-05
申请号：US107443
申请日：1998-06-30
申请人： Takashi Nakabayashi , Koji Matsuoka
发明人： Takashi Nakabayashi , Koji Matsuoka
摘要： Transmitting portions of a phase-shifting mask include plural first transmitting areas periodically arranged along a first direction and a second direction and a second transmitting area provided in an area surrounded with adjacent four first transmitting areas among the plural first transmitting areas. The first transmitting areas are formed by recessing a board so that a phase difference of substantially 180 degrees in exposure light can be caused between adjacent first transmitting areas. A phase difference of substantially 90 degrees in the exposure light is caused between the second transmitting area and the surrounding first transmitting areas. Thus, isolated patterns arranged at high density can be formed correspondingly to the first transmitting areas and the second transmitting area.
摘要翻译： 相移掩模的发送部分包括沿着第一方向和第二方向周期性排列的多个第一发送区域和设置在多个第一发送区域中的相邻的四个第一发送区域所包围的区域中的第二发送区域。 第一透射区域通过凹陷板形成，使得在相邻的第一透射区域之间可以引起曝光光中的大致180度的相位差。 在第二透射区域和周围的第一透射区域之间产生大致90度的曝光光的相位差。 因此，可以对应于第一发送区域和第二发送区域形成以高密度排列的隔离图案。
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公开(公告)号：US09071040B2
公开(公告)日：2015-06-30
申请号：US13812955
申请日：2011-06-10
CPC分类号： H01T23/00 , A61L9/22 , F24F3/166 , F24F2003/1682
摘要： A partition is formed between an ion generating unit at the windward side and an ion generating unit at the leeward side, so that the amount of airflow to pass through the ion generating unit at the windward side will become more in comparison to the amount of airflow to pass through the ion generating unit at the leeward side.
摘要翻译： 在迎风侧的离子产生单元和背风侧的离子产生单元之间形成隔板，使得与迎风侧相比，通过离子产生单元的气流量将变得更大 在背风侧通过离子产生单元。
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公开(公告)号：US20130126749A1
公开(公告)日：2013-05-23
申请号：US13812955
申请日：2011-06-10
IPC分类号： H01T23/00
CPC分类号： H01T23/00 , A61L9/22 , F24F3/166 , F24F2003/1682
摘要： A partition is formed between an ion generating unit at the windward side and an ion generating unit at the leeward side, so that the amount of airflow to pass through the ion generating unit at the windward side will become more in comparison to the amount of airflow to pass through the ion generating unit at the leeward side.
摘要翻译： 在迎风侧的离子产生单元和背风侧的离子产生单元之间形成隔板，使得与迎风侧相比，通过离子产生单元的气流量将变得更大 在背风侧通过离子产生单元。
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57.发明申请ANODE FOR LITHIUM-ION RECHARGEABLE BATTERY AND LITHIUM-ION RECHARGEABLE BATTERY INCLUDING SAME 有权锂离子可充电电池和锂离子可充电电池的阳极包括其中公开(公告)号：US20110294012A1
公开(公告)日：2011-12-01
申请号：US13117406
申请日：2011-05-27
CPC分类号： H01M4/38 , H01M4/134 , H01M4/386 , H01M4/387 , H01M10/0525 , H01M2004/021 , Y02E60/122
摘要： It is an objective of the present invention to provide a lithium-ion rechargeable battery anode which can control the volume change of a primary particle of a negative-electrode active material other than a carbon-based material and that can prevent cracks due to stress caused by the volume change from occurring and extending. There is provided an anode for a lithium-ion rechargeable battery including a primary particle of a negative-electrode active material, a conductive material, and a binder, the negative-electrode active material including at least one of silicon and tin, and at least one element selected from elements that do not chemically react with lithium, in which holes are present both in an inner core region in the central region of the primary particle of the negative-electrode active material and in a periphery region that covers the inner core region.
摘要翻译： 本发明的目的是提供一种能够控制碳基材料以外的负极活性物质的一次粒子的体积变化的锂离子二次电池阳极，能够防止由于应力引起的裂纹 通过音量变化发生和扩展。 提供一种用于锂离子可再充电电池的阳极，其包括负极活性材料的一次粒子，导电材料和粘合剂，所述负极活性材料包括硅和锡中的至少一种，并且至少包括 选自不与锂发生化学反应的元素中的一种元素，其中空穴存在于负极活性物质的一次粒子的中心区域的内芯区域中，并且覆盖内芯区域的周边区域 。
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公开(公告)号：US20100047579A1
公开(公告)日：2010-02-25
申请号：US12442047
申请日：2007-09-18
申请人： Hisato Tokoro , Shigeo Fujii , Takashi Nakabayashi
发明人： Hisato Tokoro , Shigeo Fujii , Takashi Nakabayashi
CPC分类号： G11B5/712 , B22F1/02 , B22F9/20 , B82Y25/00 , C22C33/0235 , G01N33/553 , H01F1/0054 , H01F1/33 , Y10T428/2991 , Y10T428/2993
摘要： A method for producing coated, fine metal particles comprising the steps of mixing powder comprising TiC and TiN with powder of an oxide of a metal M meeting the relation of ΔGM-O>ΔGTiO2, wherein ΔGM-O represents the standard free energy of formation of metal M oxide, and heat-treating the resultant mixed powder in a non-oxidizing atmosphere to reduce the oxide of the metal M with the powder comprising TiC and TiN, while coating the resultant metal M particles with Ti oxide, and coated, fine metal particles each comprising a metal core particle and a Ti oxide coating and having a carbon content of 0.2-1.4% by mass and a nitrogen content of 0.01-0.2% by mass.
摘要翻译： 一种制备涂覆的金属微粒的方法，包括以下步骤：将包含TiC和TiN的粉末与满足以下关系的金属M的氧化物粉末混合;其中＆Dgr; GMi代表 标准形成金属M氧化物的自由能，并且在非氧化气氛中对所得混合粉末进行热处理，以用包含TiC和TiN的粉末来还原金属M的氧化物，同时用Ti氧化物涂覆所得金属M颗粒 和包含金属核粒子和Ti氧化物被膜，碳含量为0.2〜1.4质量％，氮含量为0.01〜0.2质量％的金属微粒子。
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59.发明授权Semiconductor device manufacturing method including three gate insulating films 有权包括三个栅极绝缘膜的半导体器件制造方法公开(公告)号：US07517760B2
公开(公告)日：2009-04-14
申请号：US11702593
申请日：2007-02-06
IPC分类号： H01L21/8234 , H01L21/8236 , H01L21/336
CPC分类号： H01L21/823462 , H01L21/823412 , H01L29/7833
摘要： After protective insulating films are formed on first to third active regions, the protective insulating films formed on the first and third active regions are removed. Subsequently, an insulating film to be a first gate insulating film is formed on each of the first and third active regions, and then, the protective insulating film formed on the second active region is removed. Next, an insulating film to be a second gate insulating film is formed on the second active region, and then, the insulating film to be the first gate insulating film formed on the third active region is removed. Finally, an insulating film to be a third gate insulating film is formed on the third active region.
摘要翻译： 在第一至第三有源区上形成保护绝缘膜之后，去除形成在第一和第三有源区上的保护绝缘膜。 随后，在第一和第三有源区域中的每一个上形成作为第一栅极绝缘膜的绝缘膜，然后去除形成在第二有源区上的保护绝缘膜。 接下来，在第二有源区上形成作为第二栅极绝缘膜的绝缘膜，然后除去形成在第三有源区上的作为第一栅极绝缘膜的绝缘膜。 最后，在第三有源区上形成作为第三栅极绝缘膜的绝缘膜。
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公开(公告)号：US07474683B2
公开(公告)日：2009-01-06
申请号：US11491543
申请日：2006-07-24
申请人： Takashi Nakabayashi
发明人： Takashi Nakabayashi
CPC分类号： H01S5/12 , H01S5/1231 , H01S5/2009 , H01S5/2275 , H01S5/32391 , H01S2304/04
摘要： A distributed feedback semiconductor laser comprises a first cladding layer, a first optical guide layer, an active layer, a second optical guide layer, an InP semiconductor layer, an InGaAsP semiconductor layer, and a second cladding layer. The first optical guide layer is provided on the first cladding layer. The active layer is provided on the first optical guide layer. The second optical guide layer is provided on the active layer and made of AlGaInAs semiconductor. The InP semiconductor layer is provided on the second optical guide layer. The InGaAsP semiconductor layer is provided on the InP semiconductor layer. The second cladding layer is provided on the InGaAsP semiconductor layer and made of InP semiconductor. A diffraction grating for the distributed feedback semiconductor laser includes the InGaAsP semiconductor layer and the second cladding layer.
摘要翻译： 分布式反馈半导体激光器包括第一包层，第一光导层，有源层，第二光导层，InP半导体层，InGaAsP半导体层和第二覆层。 第一光导层设置在第一覆层上。 有源层设置在第一光导层上。 第二光导层设置在有源层上并由AlGaInAs半导体制成。 InP半导体层设置在第二导光层上。 InGaAsP半导体层设置在InP半导体层上。 第二包层设置在InGaAsP半导体层上，由InP半导体制成。 用于分布式反馈半导体激光器的衍射光栅包括InGaAsP半导体层和第二覆层。
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