公开(公告)号：US07941023B2

公开(公告)日：2011-05-10

申请号：US11890123

申请日：2007-08-03

申请人： Vipulkumar Patel ,  David Piede ,  Margaret Ghiron ,  Prakash Gothoskar

发明人： Vipulkumar Patel ,  David Piede ,  Margaret Ghiron ,  Prakash Gothoskar

IPC分类号： G02B6/10

CPC分类号： G02F1/025 ,  G02B6/122 ,  G02B6/1228 ,  G02B2006/12061 ,  G02B2006/12097

摘要： A low loss optical waveguiding structure for silicon-on-insulator (SOI)-based arrangements utilizes a tri-material configuration including a rib/strip waveguide formed of a material with a refractive index less than silicon, but greater than the refractive index of the underlying insulating material. In one arrangement, silicon nitride may be used. The index mismatch between the silicon surface layer (the SOI layer) and the rib/strip waveguide results in a majority of the optical energy remaining within the SOI layer, thus reducing scattering losses from the rib/strip structure (while the rib/strip allows for guiding along a desired signal path to be followed). Further, since silicon nitride is an amorphous material without a grain structure, this will also reduce scattering losses. Advantageously, the use of silicon nitride allows for conventional CMOS fabrication processes to be used in forming both passive and active devices.

摘要翻译： 用于绝缘体上硅（SOI）的布置的低损耗光波导结构利用三材料构造，其包括由折射率小于硅的材料形成的肋/条波导，但大于 底层绝缘材料。 在一种布置中，可以使用氮化硅。 硅表面层（SOI层）和肋/条形波导之间的折射率失配导致剩余在SOI层内的大部分光学能量，从而减少了肋/条带结构的散射损耗（而肋/条允许 用于沿着要遵循的期望信号路径引导）。 此外，由于氮化硅是不具有晶粒结构的无定形材料，所以这也将减少散射损耗。 有利地，使用氮化硅允许常规CMOS制造工艺用于形成无源器件和有源器件。

公开(公告)号：US20100316388A1

公开(公告)日：2010-12-16

申请号：US12813562

申请日：2010-06-11

申请人： Kalpendu Shastri ,  Bipin Dama ,  Vipulkumar Patel ,  Mark Webster

发明人： Kalpendu Shastri ,  Bipin Dama ,  Vipulkumar Patel ,  Mark Webster

IPC分类号： H04B10/00

CPC分类号： H04N7/22 ,  G09G5/006 ,  G09G2370/12 ,  G09G2370/18

摘要： An HDMI interconnect arrangement is presented that performs a pulse-amplitude modulation (PAM) conversion of the TMDS audio/video signals in order to simultaneously transmit all three channels over a single optical fiber. The set of three audio/video TMDS channels is applied as an input to a PAM-8 optical modulator, which functions to encode the set of three channels onto an optically-modulated output signal. The modulated optical signal is thereafter coupled into an optical fiber within an active HDMI cable and transmitted to an HDMI receiver (sink). The TMDS CLK signal is not included in this conversion into the optical domain, but remains as a separate electrical signal to be transmitted along a copper signal path within the active HDMI cable.

摘要翻译： 呈现HDMI互连布置，其执行TMDS音频/视频信号的脉冲幅度调制（PAM）转换，以便通过单根光纤同时传输所有三个通道。 三组音频/视频TMDS通道的组合被用作PAM-8光调制器的输入，PAM-8光调制器用于将三个通道的组合编码到光调制的输出信号上。 调制的光信号此后耦合到有源HDMI电缆中的光纤中，并被传输到HDMI接收器（接收器）。 TMDS CLK信号不包含在该转换到光学域中，而是作为单独的电信号保持在有源HDMI电缆内的铜信号路径上传输。

公开(公告)号：US07697793B2

公开(公告)日：2010-04-13

申请号：US12290285

申请日：2008-10-29

申请人： Mark Webster ,  Vipulkumar Patel ,  Prakash Gothoskar

发明人： Mark Webster ,  Vipulkumar Patel ,  Prakash Gothoskar

IPC分类号： G02B6/12 ,  G02F1/295

CPC分类号： G02F1/025 ,  G02F1/0147 ,  G02F1/225 ,  G02F2201/126

摘要： A silicon-based optical modulator structure includes one or more separate localized heating elements for changing the refractive index of an associated portion of the structure and thereby providing corrective adjustments to address unwanted variations in device performance. Heating is provided by thermo-optic devices such as, for example, silicon-based resistors, silicide resistors, forward-biased PN junctions, and the like, where any of these structures may easily be incorporated with a silicon-based optical modulator. The application of a DC voltage to any of these structures will generate heat, which hen transfers into the waveguiding area. The increase in local temperature of the waveguiding area will, in turn, increase the refractive index of the waveguiding in the area. Control of the applied DC voltage results in controlling the refractive index.

摘要翻译： 基于硅的光学调制器结构包括一个或多个单独的局部加热元件，用于改变结构的相关部分的折射率，从而提供校正调整以解决器件性能的不期望的变化。 加热由诸如硅基电阻器，硅化物电阻器，正向偏置PN结等的热光器件提供，其中这些结构中的任何一个可以容易地与硅基光学调制器结合。 对这些结构中的任一个施加直流电压将产生热量，母鸡转移到波导区域中。 波导区域的局部温度的增加又将增加该区域中波导的折射率。 施加的直流电压的控制导致控制折射率。

公开(公告)号：US07657130B2

公开(公告)日：2010-02-02

申请号：US12287366

申请日：2008-10-08

申请人： Kalpendu Shastri ,  Prakash Gothoskar ,  Vipulkumar Patel ,  David Piede ,  Mark Webster

发明人： Kalpendu Shastri ,  Prakash Gothoskar ,  Vipulkumar Patel ,  David Piede ,  Mark Webster

IPC分类号： G02F1/035 ,  G02F1/01 ,  G02B6/12

CPC分类号： G02F1/0121 ,  G02F1/2255 ,  G02F1/2257 ,  G02F2001/0152

摘要： A silicon-insulator-silicon capacitive (SISCAP) optical modulator is configured to provide analog operation for applications which previously required the use of relatively large, power-consuming and expensive lithium niobate devices. An MZI-based SISCAP modulator (preferably a balanced arrangement with a SISCAP device on each arm) is responsive to an incoming high frequency electrical signal and is biased in a region where the capacitance of the device is essentially constant and the transform function of the MZI is linear.

摘要翻译： 硅 - 绝缘体 - 硅电容（SISCAP）光调制器被配置为为先前需要使用相对较大，耗电和昂贵的铌酸锂器件的应用提供模拟操作。 基于MZI的SISCAP调制器（优选地，在每个臂上具有SISCAP器件的平衡布置）响应于输入的高频电信号，并且被偏置在器件的电容基本上恒定的区域中，并且MZI的变换函数 是线性的

公开(公告)号：US20090123114A1

公开(公告)日：2009-05-14

申请号：US12218367

申请日：2008-07-15

申请人： Mark Webster ,  Prakash Gothoskar ,  Vipulkumar Patel ,  David Piede

发明人： Mark Webster ,  Prakash Gothoskar ,  Vipulkumar Patel ,  David Piede

IPC分类号： G02B6/35

CPC分类号： G02B6/30 ,  G02B6/3598 ,  G02B6/3636 ,  G02B6/3652 ,  G02B6/3692 ,  G02B6/4249

摘要： One or more nanotaper coupling waveguides formed within an optical substrate allows for straightforward, reproducible offset launch conditions to be achieved between an incoming signal and the core region of a multimode fiber (which may be disposed along an alignment fixture formed in the optical substrate), fiber array or other multimode waveguiding structure. Offset launching of a single mode signal into a multimode fiber couples the signal into favorable spatial modes which reduce the presence of differential mode dispersion along the fiber. This approach to providing single mode signal coupling into legacy multimode fiber is considered to be an improvement over the prior art which required the use of an interface element between a single mode fiber and multimode fiber, limiting the number of propagating signals and applications for the legacy multimode fiber. An optical switch may be used to select the specific nanotaper(s) for coupling into the multimode fiber.

摘要翻译： 形成在光学衬底内的一个或多个纳米锥耦合波导允许在多模光纤（其可以沿着形成在光学衬底中的对准夹具设置）的入射信号和芯区域之间实现简单，可再现的偏移发射条件， 光纤阵列或其他多模波导结构。 偏移将单模信号发射到多模光纤中将信号耦合到有利的空间模式，这降低了沿着光纤的差分色散的存在。 将单模信号耦合提供给传统多模光纤的这种方法被认为是对需要使用单模光纤和多模光纤之间的接口元件的现有技术的改进，限制了传播信号的数量和遗留的应用 多模光纤 可以使用光学开关来选择用于耦合到多模光纤的特定纳米锥。

公开(公告)号：US20090110342A1

公开(公告)日：2009-04-30

申请号：US12290285

申请日：2008-10-29

申请人： Mark Webster ,  Vipulkumar Patel ,  Prakash Gothoskar

发明人： Mark Webster ,  Vipulkumar Patel ,  Prakash Gothoskar

IPC分类号： G02F1/035

CPC分类号： G02F1/025 ,  G02F1/0147 ,  G02F1/225 ,  G02F2201/126

摘要： A silicon-based optical modulator structure includes one or more separate localized heating elements for changing the refractive index of an associated portion of the structure and thereby providing corrective adjustments to address unwanted variations in device performance. Heating is provided by thermo-optic devices such as, for example, silicon-based resistors, silicide resistors, forward-biased PN junctions, and the like, where any of these structures may easily be incorporated with a silicon-based optical modulator. The application of a DC voltage to any of these structures will generate heat, which then transfers into the waveguiding area. The increase in local temperature of the waveguiding area will, in turn, increase the refractive index of the waveguiding in the area. Control of the applied DC voltage results in controlling the refractive index

摘要翻译： 基于硅的光学调制器结构包括一个或多个单独的局部加热元件，用于改变结构的相关部分的折射率，从而提供校正调整以解决器件性能的不期望的变化。 加热由诸如硅基电阻器，硅化物电阻器，正向偏置PN结等的热光器件提供，其中这些结构中的任何一个可以容易地与硅基光学调制器结合。 对这些结构中的任何一个施加直流电压将产生热量，然后传递到波导区域。 波导区域的局部温度的增加又将增加该区域中波导的折射率。 施加的直流电压的控制导致控制折射率

公开(公告)号：US20070280616A1

公开(公告)日：2007-12-06

申请号：US11890123

申请日：2007-08-03

申请人： Vipulkumar Patel ,  David Piede ,  Margaret Ghiron ,  Prakash Gothoskar

发明人： Vipulkumar Patel ,  David Piede ,  Margaret Ghiron ,  Prakash Gothoskar

IPC分类号： G02B6/10 ,  H01L21/62

CPC分类号： G02F1/025 ,  G02B6/122 ,  G02B6/1228 ,  G02B2006/12061 ,  G02B2006/12097

摘要： A low loss optical waveguiding structure for silicon-on-insulator (SOI)-based arrangements utilizes a tri-material configuration including a rib/strip waveguide formed of a material with a refractive index less than silicon, but greater than the refractive index of the underlying insulating material. In one arrangement, silicon nitride may be used. The index mismatch between the silicon surface layer (the SOI layer) and the rib/strip waveguide results in a majority of the optical energy remaining within the SOI layer, thus reducing scattering losses from the rib/strip structure (while the rib/strip allows for guiding along a desired signal path to be followed). Further, since silicon nitride is an amorphous material without a grain structure, this will also reduce scattering losses. Advantageously, the use of silicon nitride allows for conventional CMOS fabrication processes to be used in forming both passive and active devices.

摘要翻译： 用于绝缘体上硅（SOI）的布置的低损耗光波导结构利用三材料构造，其包括由折射率小于硅的材料形成的肋/条波导，但大于 底层绝缘材料。 在一种布置中，可以使用氮化硅。 硅表面层（SOI层）和肋/条形波导之间的折射率失配导致剩余在SOI层内的大部分光学能量，从而减少了肋/条带结构的散射损耗（而肋/条允许 用于沿着要遵循的期望信号路径引导）。 此外，由于氮化硅是不具有晶粒结构的无定形材料，所以这也将减少散射损耗。 有利地，使用氮化硅允许常规CMOS制造工艺用于形成无源器件和有源器件。

公开(公告)号：US07196107B2

公开(公告)日：2007-03-27

申请号：US10451307

申请日：2001-12-18

申请人： Paul John Beswick ,  Vipulkumar Patel ,  Michael Lawrence Sierra

发明人： Paul John Beswick ,  Vipulkumar Patel ,  Michael Lawrence Sierra

IPC分类号： A61K31/426 ,  A61K31/421 ,  C07D277/20 ,  C07D263/30

CPC分类号： C07D277/24

摘要： A compound of formula (I) or pharmaceutically acceptable salts and solvates thereof. R1 and R2 are independently H or C1-3alkyl, m is 0–3; X1 is NH, NCH3, O, S; R3, R4 and R5 are independently H, CH3, CF3, OCH3, allyl or halogen; X2 is (CR10R11)n wherein n is 1 or 2; R10 and R11 independently represent H, fluorine or C1-16alkyl; R26 and R27 are independently H, C1-3 alkyl or R26 and R27 together with the carbon atom to which they are bonded form a 3–5 membered cycloalklyl ring. R6 and R7 independently represent H, fluorine or C1-16alkyl; R9 is C1-6alkyl or CF3; One of Y and Z is N, the other is S or O; Each R8 independently represents CF3, OCH3, CH3 or halogen; y is O, 1, 2, 3, 4, 5. Use of a compound of formula (I) for the manufacture of a medicament for the prevention or treatment of a hPPAR mediated disease or condition, such as dyslipidemia, syndrome X, heart failure, hypercholesteremia, cardiovascular disease, type II diabetes mellitus, type 1 diabetes, insulin resistance hyperlipidemia, obesity, anorexia bulimia, inflammation and anorexia nervosa

摘要翻译： 式（I）化合物或其药学上可接受的盐和溶剂化物。 R 1和R 2独立地为H或C 1-3烷基，m为0-3; X 1是NH，NCH 3，O，S; R 3，R 4和R 5独立地为H，CH 3，CF 3， OCH 3，OCH 3，烯丙基或卤素; 其中n为1或2;（3）其中n为1或2; R 10和R 11独立地代表H，氟或C 1-16烷基; R 26和R 27独立地是H，C 1-3烷基或R 26和R 26， 27与它们所键合的碳原子一起形成3-5元环烯基环。 R 6和R 7独立地表示H，氟或C 1-16烷基; R 9是C 1-6烷基或CF 3 N; Y和Z之一是N，另一个是S或O; 每个R 8独立地表示CF 3，OCH 3，CH 3或卤素; y是O，1,2,3,4,5。式（I）化合物在制备用于预防或治疗hPPAR介导的疾病或病症如血脂异常，综合征X，心脏的药物中的用途 失败，高胆固醇血症，心血管疾病，II型糖尿病，1型糖尿病，胰岛素抵抗性高脂血症，肥胖，厌食症，炎症和神经性厌食

公开(公告)号：US07187837B2

公开(公告)日：2007-03-06

申请号：US11069852

申请日：2005-02-28

申请人： Prakash Gothoskar ,  Margaret Ghiron ,  Robert Keith Montgomery ,  Vipulkumar Patel ,  Kalpendu Shastri ,  Soham Pathak ,  Katherine A. Yanushefski

发明人： Prakash Gothoskar ,  Margaret Ghiron ,  Robert Keith Montgomery ,  Vipulkumar Patel ,  Kalpendu Shastri ,  Soham Pathak ,  Katherine A. Yanushefski

IPC分类号： G02B6/26 ,  G02B6/10 ,  H01L29/22 ,  H01L33/00 ,  H01L27/14 ,  H01L31/00

CPC分类号： G02B6/12004 ,  G02F1/025 ,  G02F1/292 ,  G02F2001/294

摘要： An arrangement for actively controlling, in two dimensions, the manipulation of light within an SOI-based optical structure utilizes doped regions formed within the SOI layer and a polysilicon layer of a silicon-insulator-silicon capacitive (SISCAP) structure. The regions are oppositely doped so as to form an active device, where the application of a voltage potential between the oppositely doped regions functions to modify the refractive index in the affected area and alter the properties of an optical signal propagating through the region. The doped regions may be advantageously formed to exhibit any desired “shaped” (such as, for example, lenses, prisms, Bragg gratings, etc.), so as to manipulate the propagating beam as a function of the known properties of these devices. One or more active devices of the present invention may be included within a SISCAP formed, SOI-based optical element (such as, for example, a Mach-Zehnder interferometer, ring resonator, optical switch, etc.) so as to form an active, tunable element.

摘要翻译： 用于主动地控制SOI基光学结构内的光的操纵的布置利用形成在SOI层内的掺杂区域和硅绝缘体 - 硅电容（SISCAP）结构的多晶硅层。 这些区域相反地掺杂以形成有源器件，其中在相对掺杂区域之间施加电压电位用于改变受影响区域中的折射率并改变传播通过该区域的光信号的特性。 可以有利地形成掺杂区域以呈现任何期望的“成形”（例如，透镜，棱镜，布拉格光栅等），以便根据这些器件的已知特性来操纵传播光束。 本发明的一个或多个有源器件可以包括在形成SISCAP的SOI基光学元件（例如，诸如Mach-Zehnder干涉仪，环形谐振器，光学开关等）中，以形成活跃的 ，可调元素。

公开(公告)号：US07091237B2

公开(公告)日：2006-08-15

申请号：US10476194

申请日：2002-05-09

申请人： Paul John Beswick ,  Christopher Charles Hamlett ,  Vipulkumar Patel ,  Michael Lawrence Sierra ,  Nigel Grahame Ramsden

发明人： Paul John Beswick ,  Christopher Charles Hamlett ,  Vipulkumar Patel ,  Michael Lawrence Sierra ,  Nigel Grahame Ramsden

IPC分类号： A61K31/38 ,  A61K31/34 ,  C07D333/24 ,  C07D307/02

CPC分类号： C07D307/38 ,  C07D307/42 ,  C07D333/16 ,  C07D333/18 ,  C07D405/06 ,  C07D405/12 ,  C07D409/04 ,  C07D409/12

摘要： A compound of formula (I) or pharmaceutically acceptable salts and solvates thereof, for the treatment of a hPPAR mediated disease or condition

摘要翻译： 用于治疗hPPAR介导的疾病或病症的式（I）化合物或其药学上可接受的盐和溶剂合物