摘要:
A wafer scale implementation of an opto-electronic transceiver assembly process utilizes a silicon wafer as an optical reference plane and platform upon which all necessary optical and electronic components are simultaneously assembled for a plurality of separate transceiver modules. In particular, a silicon wafer is utilized as a “platform” (interposer) upon which all of the components for a multiple number of transceiver modules are mounted or integrated, with the top surface of the silicon interposer used as a reference plane for defining the optical signal path between separate optical components. Indeed, by using a single silicon wafer as the platform for a large number of separate transceiver modules, one is able to use a wafer scale assembly process, as well as optical alignment and testing of these modules.
摘要:
An HDMI interconnect arrangement is presented that performs a pulse-amplitude modulation (PAM) conversion of the TMDS audio/video signals in order to simultaneously transmit all three channels over a single optical fiber. The set of three audio/video TMDS channels is applied as an input to a PAM-8 optical modulator, which functions to encode the set of three channels onto an optically-modulated output signal. The modulated optical signal is thereafter coupled into an optical fiber within an active HDMI cable and transmitted to an HDMI receiver (sink). The TMDS CLK signal is not included in this conversion into the optical domain, but remains as a separate electrical signal to be transmitted along a copper signal path within the active HDMI cable.
摘要:
An HDMI interconnect arrangement is presented that performs a pulse-amplitude modulation (PAM) conversion of the TMDS audio/video signals in order to simultaneously transmit all three channels over a single optical fiber. The set of three audio/video TMDS channels is applied as an input to a PAM-8 optical modulator, which functions to encode the set of three channels onto an optically-modulated output signal. The modulated optical signal is thereafter coupled into an optical fiber within an active HDMI cable and transmitted to an HDMI receiver (sink). The TMDS CLK signal is not included in this conversion into the optical domain, but remains as a separate electrical signal to be transmitted along a copper signal path within the active HDMI cable.
摘要:
A wafer scale implementation of an opto-electronic transceiver assembly process utilizes a silicon wafer as an optical reference plane and platform upon which all necessary optical and electronic components are simultaneously assembled for a plurality of separate transceiver modules. In particular, a silicon wafer is utilized as a “platform” (interposer) upon which all of the components for a multiple number of transceiver modules are mounted or integrated, with the top surface of the silicon interposer used as a reference plane for defining the optical signal path between separate optical components. Indeed, by using a single silicon wafer as the platform for a large number of separate transceiver modules, one is able to use a wafer scale assembly process, as well as optical alignment and testing of these modules.
摘要:
A configuration for routing electrical signals between a conventional electronic integrated circuit (IC) and an opto-electronic subassembly is formed as an array of signal paths carrying oppositely-signed signals on adjacent paths to lower the inductance associated with the connection between the IC and the opto-electronic subassembly. The array of signal paths can take the form of an array of wirebonds between the IC and the subassembly, an array of conductive traces formed on the opto-electronic subassembly, or both.
摘要:
A configuration for routing electrical signals between a conventional electronic integrated circuit (IC) and an opto-electronic subassembly is formed as an array of signal paths carrying oppositely-signed signals on adjacent paths to lower the inductance associated with the connection between the IC and the opto-electronic subassembly. The array of signal paths can take the form of an array of wirebonds between the IC and the subassembly, an array of conductive traces formed on the opto-electronic subassembly, or both.
摘要:
An optical interconnection arrangement for use in high data applications is presented that eliminates the need for extensive serialization/de-serialization (SERDES) functionality by utilizing pulse amplitude modulation (PAM) techniques to represent the data in the optical domain while utilizing a separate channel for transmitting an optical clock signal, eliminating the need for clock recovery circuitry on the receive end of the arrangement.
摘要:
An optical interconnection arrangement for use in high data applications is presented that eliminates the need for extensive serialization/de-serialization (SERDES) functionality by utilizing pulse amplitude modulation (PAM) techniques to represent the data in the optical domain while utilizing a separate channel for transmitting an optical clock signal, eliminating the need for clock recovery circuitry on the receive end of the arrangement.
摘要:
A silicon-based optical modulator structure includes one or more separate localized heating elements for changing the refractive index of an associated portion of the structure and thereby providing corrective adjustments to address unwanted variations in device performance. Heating is provided by thermo-optic devices such as, for example, silicon-based resistors, silicide resistors, forward-biased PN junctions, and the like, where any of these structures may easily be incorporated with a silicon-based optical modulator. The application of a DC voltage to any of these structures will generate heat, which then transfers into the waveguiding area. The increase in local temperature of the waveguiding area will, in turn, increase the refractive index of the waveguiding in the area. Control of the applied DC voltage results in controlling the refractive index.
摘要:
A silicon-based optical modulator structure includes one or more separate localized heating elements for changing the refractive index of an associated portion of the structure and thereby providing corrective adjustments to address unwanted variations in device performance. Heating is provided by thermo-optic devices such as, for example, silicon-based resistors, silicide resistors, forward-biased PN junctions, and the like, where any of these structures may easily be incorporated with a silicon-based optical modulator. The application of a DC voltage to any of these structures will generate heat, which then transfers into the waveguiding area. The increase in local temperature of the waveguiding area will, in turn, increase the refractive index of the waveguiding in the area. Control of the applied DC voltage results in controlling the refractive index