公开(公告)号：US20070161229A1

公开(公告)日：2007-07-12

申请号：US11328693

申请日：2006-01-10

申请人： Michael Turner ,  Ritwik Chatterjee ,  Stanley Filipiak

发明人： Michael Turner ,  Ritwik Chatterjee ,  Stanley Filipiak

IPC分类号： H01L21/4763

CPC分类号： H01L21/02362 ,  H01L21/02074 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/3165 ,  H01L21/76826

摘要： A method is provided for creating a barrier layer (217) on a substrate comprising a dielectric layer (203) and a metal interconnect (211). In accordance with the method, the substrate is treated with a first plasma comprising helium, thereby forming a treated substrate. The treated substrate is then exposed to a second plasma selected from the group consisting of oxidizing plasmas and reducing plasmas. Next, a barrier layer is created on the treated substrate.

摘要翻译： 提供了一种用于在包括电介质层（203）和金属互连（211）的衬底上产生阻挡层（217）的方法。 根据该方法，用包括氦的第一等离子体处理衬底，从而形成经处理的衬底。 然后将经处理的底物暴露于选自氧化等离子体和还原等离子体的第二等离子体中。 接下来，在经处理的基底上产生阻挡层。

公开(公告)号：US07233838B2

公开(公告)日：2007-06-19

申请号：US10627342

申请日：2003-07-25

申请人： Douglas Barry ,  Thomas L. Bybee ,  Adrian Chan ,  John Fuller ,  Ray Puseman ,  Greg Rothman ,  Don R. Simms ,  Michael Turner ,  Jay Woods ,  Inna M. Zevakina

发明人： Douglas Barry ,  Thomas L. Bybee ,  Adrian Chan ,  John Fuller ,  Ray Puseman ,  Greg Rothman ,  Don R. Simms ,  Michael Turner ,  Jay Woods ,  Inna M. Zevakina

IPC分类号： G06F7/00

CPC分类号： G01N35/04 ,  B25J18/04 ,  B65G21/22 ,  B65G23/08 ,  B65G23/30 ,  B65G37/005 ,  B65G37/02 ,  B65G47/52 ,  B65G47/763 ,  B65G47/902 ,  B65G47/914 ,  B65G2201/0261 ,  G01N35/0099 ,  G01N2035/0406 ,  G01N2035/0462 ,  G01N2035/0465 ,  G01N2035/0467 ,  G01N2035/047 ,  G01N2035/0484 ,  Y10T436/113332

摘要： A transfer and positioning apparatus includes a positioning assembly located between the tracks of a dual lane conveyor and upstream of a lane changer. The positioning assembly includes a retractable shaft for stopping a carrier along a first conveyor adjacent the assembly. A pair of gripper arms are pivotally mounted to move between an open position permitting the carrier to pass along the conveyor track, and a closed position with forward ends in contact with a specimen container on the carrier to position the container in a reference location for direct processing. The lane changer includes a shuttle depending from an overhead support with a pair of arms for receiving and shifting a specimen carrier from one conveyor to a second conveyor of a dual-conveyor track. The shuttle is operable to retain a specimen carrier along either the first or second conveyor and to release a specimen carrier along either the first or second conveyor. Sensors are located to detect the presence of a specimen carrier at each of the retention locations, and to confirm the release of a specimen carrier from the shuttle along each of the conveyors. A queue is positioned upstream of the positioning assembly and includes retractable shafts, sensors and scanners for selectively retaining, detecting and scanning identification data from a specimen carrier on either conveyor upstream of the shuttle.

摘要翻译： 传送和定位设备包括定位组件，该定位组件位于双通道传送带的轨道和车道更换器的上游之间。 所述定位组件包括用于沿与所述组件相邻的第一传送器停止载体的可伸缩轴。 一对夹持臂枢转地安装成在允许承载件沿输送机轨道通过的打开位置和关闭位置之间移动，其中前端与载体上的标本容器接触，以将容器定位在参考位置以便直接 处理。 车道更换器包括从具有一对臂的顶部支架悬挂的梭子，用于接收并将样品载体从一个输送机移动到双输送机轨道的第二输送机。 梭子可操作以沿着第一或第二输送机保持试样载体并沿着第一或第二输送机释放试样载体。 定位传感器以检测在每个保持位置处的样本载体的存在，并且确认沿着每个输送机的试样载体从梭子的释放。 队列位于定位组件的上游，并且包括可伸缩的轴，传感器和扫描器，用于选择性地保持，检测和扫描来自穿梭机上游的任一输送机上的标本载体的识别数据。

公开(公告)号：US20060273534A1

公开(公告)日：2006-12-07

申请号：US11340504

申请日：2006-01-27

申请人： Michael Turner ,  Ryan Murphy ,  Duston Stutzman ,  Kah-Thart Goo

发明人： Michael Turner ,  Ryan Murphy ,  Duston Stutzman ,  Kah-Thart Goo

IPC分类号： B62B7/12 ,  B62B3/02

CPC分类号： A45F4/02 ,  A45C2009/005 ,  A45F3/04 ,  B62K3/002 ,  B62K15/006

摘要： The combination scooter/backpack is an article carrying device with the capacity to be converted into a wheeled land vehicle, and therefore has two modes of usage. The article carrying device resembles a conventional backpack with two straps positioned to be placed over the user's shoulders, entitled backpack mode. The wheeled land vehicle functions as a popular collapsible scooter, two wheels mounted upon a board member with propulsion means provided by user's contact with the ground, entitled scooter mode. A horizontal handlebar is positioned at the top of the combination and serves to steer the front wheel during scooter mode. Conversion between backpack mode and scooter mode is accomplished with the raising and lowering of said handlebar and the manipulation of releasable fasteners and latches. In both backpack and scooter modes, a cover circumferentially surrounds the combination scooter/backpack to secure and protect components that are not in use.

公开(公告)号：US20060261436A1

公开(公告)日：2006-11-23

申请号：US11132936

申请日：2005-05-19

申请人： Michael Turner ,  John Hackenberg ,  Toni Van Gompel

发明人： Michael Turner ,  John Hackenberg ,  Toni Van Gompel

IPC分类号： H01L29/00 ,  H01L21/76

CPC分类号： H01L29/78 ,  H01L21/76283 ,  H01L21/84

摘要： A process can be used to achieve the benefits of corner rounding of a semiconductor layer near an edge of a trench field isolation region without having the bird's beak or stress issues that occur with a conventional SOI device. A trench can be partially etched into a semiconductor layer, and a liner layer may be formed to help round corners of the second semiconductor layer. In one embodiment, the trench can be etched deeper and potentially expose an underlying buried oxide layer. Formation of the trench field isolation region can be completed, and electronic components can be formed within the semiconductor layer. An electronic device, such as an integrated circuit, will have a liner layer that extends only partly, but not completely, along a sidewall of the trench. In another embodiment, the process can be extended to other substrates and is not limited only to SOI substrates.

摘要翻译： 可以使用一种方法来实现在沟槽场隔离区域的边缘附近的半导体层的圆角化的优点，而不会发生与常规SOI器件发生的鸟嘴或应力问题。 可以将沟槽部分地蚀刻到半导体层中，并且可以形成衬垫层以帮助第二半导体层的圆角。 在一个实施例中，可以更深地蚀刻沟槽并且潜在地暴露下面的掩埋氧化物层。 可以完成沟槽场隔离区的形成，并且可以在半导体层内形成电子部件。 诸如集成电路的电子装置将具有仅沿着沟槽的侧壁部分但不完全延伸的衬垫层。 在另一个实施例中，该工艺可以扩展到其它衬底，并且不仅限于SOI衬底。

公开(公告)号：US20050130405A1

公开(公告)日：2005-06-16

申请号：US10736853

申请日：2003-12-16

申请人： Gregory Spencer ,  Michael Turner

发明人： Gregory Spencer ,  Michael Turner

IPC分类号： H01L21/312 ,  H01L21/316 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L29/40

CPC分类号： H01L21/7684 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/76832 ,  H01L21/76835 ,  H01L23/5223 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A backend semiconductor fabrication process includes forming an interlevel dielectric (ILD) overlying a wafer substrate by forming a low K dielectric (K

摘要翻译： 后端半导体制造工艺包括通过在晶片的衬底上形成覆盖在低K电介质上的有机氧化硅胶层而形成覆盖在晶片衬底上的层间电介质（ILD），形成覆盖晶片衬底的低K电介质（K <3.0），以及 形成覆盖胶层电介质的CMP阻挡层电介质。 然后在ILD中形成空隙，沉积导电材料以填充空隙，并且抛光工艺除去过量的导电材料。 通过使用有机前体和氧前体形成CVD等离子体并且通过形成胶层电介质和停止层来保持等离子体来实现形成胶层电介质和CMP停止层电介质。 有机前体的流速相对于氧气前体流速减小以形成基本上不含碳的CMP停止层。

公开(公告)号：US20050130359A1

公开(公告)日：2005-06-16

申请号：US10737115

申请日：2003-12-16

申请人： Toni Van Gompel ,  Mark Hall ,  Mohamad Jahanbani ,  Michael Turner

发明人： Toni Van Gompel ,  Mark Hall ,  Mohamad Jahanbani ,  Michael Turner

IPC分类号： H01L21/762 ,  H01L21/336 ,  H01L21/8234

CPC分类号： H01L21/76283

摘要： A method for forming trench isolation in an SOI substrate begins with a pad oxide followed by an antireflective coating (ARC) over the upper semiconductor layer of the SOI substrate. The pad oxide is kept to a thickness not greater than about 100 Angstroms. An opening is formed for the trench isolation that extends into the oxide below the upper semiconductor layer to expose a surface thereof. The pad oxide is recessed along its sidewall with an isotropic etch. This is followed by a thin, not greater than 50 Angstroms, oxide grown along the sidewall of the opening. This grown oxide avoids forming a recess between the ARC and the pad oxide and also avoids forming a void between the surface of the lower oxide layer and the grown oxide. This results in avoiding polysilicon stringers when the subsequent polysilicon gate layer is formed.

摘要翻译： 在SOI衬底中形成沟槽隔离的方法开始于衬底氧化物，然后在SOI衬底的上半导体层上方具有抗反射涂层（ARC）。 衬垫氧化物保持不大于约100埃的厚度。 形成用于沟槽隔离的开口，其延伸到上半导体层下方的氧化物中以暴露其表面。 衬垫氧化物沿其侧壁凹陷，具有各向同性蚀刻。 其后是沿着开口的侧壁生长的薄的，不大于50埃的氧化物。 这种生长的氧化物避免在ARC和衬垫氧化物之间形成凹陷，并且还避免在低氧化物层的表面和生长的氧化物之间形成空隙。 这导致当形成随后的多晶硅栅极层时避免多晶硅桁条。

公开(公告)号：US20050049529A1

公开(公告)日：2005-03-03

申请号：US10654560

申请日：2003-09-03

申请人： Roman Ferber ,  Charles Huang ,  John Nemazi ,  Michael Turner

发明人： Roman Ferber ,  Charles Huang ,  John Nemazi ,  Michael Turner

IPC分类号： A61H7/00 ,  A61H23/02

CPC分类号： A61H23/0263 ,  A61H7/001

摘要： The present invention discloses a hand-held body massager having a transverse housing with a massage region. A massage unit is oriented within the housing for parting a massage effect from the massage region. A pair of elongate arms are each pivotally connected to opposed ends of the housing with the massage region oriented therebetween. Each arm includes a handle to be grasped by a user so that the user may urge the massage region against a target surface of the user's body.

摘要翻译： 本发明公开了一种具有按摩区域的横向壳体的手持式身体按摩器。 按摩单元定位在外壳内，用于分离按摩区域的按摩效果。 一对细长的臂各自枢转地连接到壳体的相对的端部，按摩区域定向在其间。 每个臂包括由使用者抓握的手柄，使得使用者可以将按摩区域推向使用者身体的目标表面。

公开(公告)号：US06584776B2

公开(公告)日：2003-07-01

申请号：US09808217

申请日：2001-03-14

申请人： Frank F. Mittricker ,  Michael Turner

发明人： Frank F. Mittricker ,  Michael Turner

IPC分类号： F02C330

CPC分类号： F01K21/047 ,  F02C7/08 ,  Y02E20/14 ,  Y02E20/16 ,  Y02P80/15

摘要： A method and system for generating power include using a cogeneration power system having a gas turbine. The gas turbine has a compressor section for receiving air to be compressed. The compressed air is fed to a combustor section where it is mixed with fuel and the fuel is burned to produce heated combustion gas. The heated combustion gas is expanded in an expander section to generate shaft work which is used to drive a generator or alternator for producing electric power. The heated combustion gas leaves the expander as turbine exhaust which is cooled by transferring at least part of its heat to the air ahead of the combustor.

摘要翻译： 一种用于发电的方法和系统包括使用具有燃气轮机的热电联供系统。 燃气轮机具有用于接收待压缩空气的压缩机部分。 压缩空气被供给到燃烧器部分，在那里与燃料混合并燃烧燃料以产生加热的燃烧气体。 加热的燃烧气体在膨胀器部分中膨胀以产生用于驱动发电机或交流发电机以产生电力的轴作用。 加热的燃烧气体作为涡轮机废气离开膨胀机，其通过将至少部分热量转移到燃烧器前方的空气来冷却。

公开(公告)号：US06534423B1

公开(公告)日：2003-03-18

申请号：US09752698

申请日：2000-12-27

申请人： Michael Turner

发明人： Michael Turner

IPC分类号： H01L2131

CPC分类号： H01J37/32862 ,  C23C16/4405 ,  C23C16/507 ,  H01J37/321

摘要： An inductively-coupled hydrogen plasma (ICP) is used to passivate a plasma-enhanced chemical vapor deposition reactor following an in situ cleaning step. The hydrogen ICP effectively removes the fluorine and hydrogen that typically become impregnated in the walls of the reaction chamber during the in situ clean and thereby reduces the amount of “outgassing” that occurs during subsequent deposition cycles. This outgassing may cause the film of deposition material that normally forms on the walls to flake, significantly reducing the yield of usable devices. The hydrogen ICP passivation process has been found particularly effective in conjunction with the deposition of heavily-doped silicon oxide layers.

摘要翻译： 电感耦合氢等离子体（ICP）用于在原位清洗步骤之后钝化等离子体增强化学气相沉积反应器。 氢气ICP有效地去除在原位清洁期间通常变得浸渍在反应室的壁中的氟和氢，从而减少在随后的沉积循环期间发生的“除气”的量。 这种除气可能导致通常在壁上形成的沉积材料的薄膜剥落，显着降低了可用装置的产量。 已经发现氢ICP钝化工艺与沉积重掺杂氧化硅层特别有效。