公开(公告)号：US07993971B2

公开(公告)日：2011-08-09

申请号：US11966126

申请日：2007-12-28

申请人： Ritwik Chatterjee ,  Eddic Acosta ,  Varughese Mathew

发明人： Ritwik Chatterjee ,  Eddic Acosta ,  Varughese Mathew

IPC分类号： H01L21/00

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L24/81 ,  H01L25/50 ,  H01L2224/05001 ,  H01L2224/05026 ,  H01L2224/05027 ,  H01L2224/05147 ,  H01L2224/05184 ,  H01L2224/05572 ,  H01L2224/1147 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/1357 ,  H01L2224/13647 ,  H01L2224/81097 ,  H01L2224/81203 ,  H01L2224/8181 ,  H01L2225/06513 ,  H01L2924/00013 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/13099

摘要： A method for forming a semiconductor structure includes forming a first contact pad on a first die, wherein the first contact pad comprises a first metal element, forming a metal over the first contact pad, wherein the metal comprises a second metal element, and the second metal element is different from the first metal element. The method further includes rapidly reflowing a portion of the metal to form a thin intermetallic layer. The method further includes attaching the first contact pad of the first die to a second contact pad of a second die, wherein attaching comprises heating the first contact pad and the second contact pad to reflow the metal to form an intermetallic layer such that substantially all of the metal formed over the first contact pad is used as part of the intermetallic layer.

摘要翻译： 一种用于形成半导体结构的方法包括：在第一裸片上形成第一接触焊盘，其中所述第一接触焊盘包括第一金属元件，在所述第一接触焊盘上形成金属，其中所述金属包括第二金属元件， 金属元素不同于第一金属元素。 该方法还包括快速回流一部分金属以形成薄的金属间层。 该方法还包括将第一管芯的第一接触焊盘连接到第二管芯的第二接触焊盘，其中附接包括加热第一接触焊盘和第二接触焊盘以回流金属以形成金属间层，使得基本上全部 形成在第一接触垫上的金属被用作金属间层的一部分。

公开(公告)号：US07811932B2

公开(公告)日：2010-10-12

申请号：US11966077

申请日：2007-12-28

申请人： Scott K. Pozder ,  Ritwik Chatterjee

发明人： Scott K. Pozder ,  Ritwik Chatterjee

IPC分类号： H01L21/44

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05582 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05684 ,  H01L2224/06102 ,  H01L2224/10135 ,  H01L2224/10165 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/1403 ,  H01L2224/14517 ,  H01L2224/16 ,  H01L2224/16503 ,  H01L2224/81136 ,  H01L2224/81141 ,  H01L2224/81801 ,  H01L2224/83365 ,  H01L2224/83385 ,  H01L2225/06513 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10329 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/01007

摘要： A die-on-die assembly has a first die (10) and a second die (50). The first die (10) has a first contact extension (28,42) and a peg (32,44,45) extending a first height above the first die. The second die (50) has a second contact extension (68) connected to the first contact extension and has a containing feature (62) extending a second height above the second die surrounding the peg. The peg extends past the containing feature. Because the peg extends past the containing feature, lateral movement between the first and second die can cause the peg to come in contact with and be constrained by the containing feature. The peg and containing feature are thus useful in constraining movement between the first and second die.

摘要翻译： 模具上的模具组件具有第一模具（10）和第二模具（50）。 第一模具（10）具有延伸第一模具上方的第一高度的第一接触延伸部（28,42）和钉（32,44,45）。 第二模具（50）具有连接到第一接触延伸部的第二接触延伸部（68），并且具有延伸在围绕钉的第二模具上方的第二高度的容纳特征（62）。 钉子延伸穿过包含的特征。 因为钉延伸穿过容纳特征，所以第一和第二管芯之间的横向移动可以导致钉与接合特征接触并被约束。 因此，钉和容纳特征可用于限制第一和第二管芯之间的运动。

公开(公告)号：US07572723B2

公开(公告)日：2009-08-11

申请号：US11552821

申请日：2006-10-25

申请人： Varughese Mathew ,  Eddie Acosta ,  Ritwik Chatterjee ,  Sam S. Garcia

发明人： Varughese Mathew ,  Eddie Acosta ,  Ritwik Chatterjee ,  Sam S. Garcia

IPC分类号： H01L21/4763

CPC分类号： H01L24/11 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01327 ,  H01L2924/14

摘要： A semiconductor process is taught for performing electroless plating of copper overlying at least a portion of a layer comprising cobalt, nickel, or both cobalt and nickel. The cobalt and/or nickel comprising layer may be formed using electroless plating. For some embodiments, a tin layer is then formed overlying the copper. The tin layer may be formed using immersion plating or electroless plating. A micropad may comprise the cobalt and/or nickel comprising layer and the copper layer. In some embodiments, the micropad may also comprise the tin layer. In one embodiment, the micropad may be compressed at an elevated temperature to form a copper tin intermetallic compound which provides an interconnect between a plurality of semiconductor devices.

摘要翻译： 教导了一种半导体工艺，用于执行铜覆盖至少部分钴，镍或钴和镍两者的层的化学镀。 可以使用无电镀形成包含钴和/或镍的层。 对于一些实施例，然后形成覆盖铜的锡层。 锡层可以使用浸镀或无电镀形成。 微孔可以包括包含钴和/或镍的层和铜层。 在一些实施方案中，微团也可包含锡层。 在一个实施例中，微塔可以在升高的温度下被压缩以形成提供多个半导体器件之间的互连的铜锡金属间化合物。

公开(公告)号：US20080113505A1

公开(公告)日：2008-05-15

申请号：US11558988

申请日：2006-11-13

申请人： Terry G. Sparks ,  Syed M. Alam ,  Ritwik Chatterjee ,  Shahid Rauf

发明人： Terry G. Sparks ,  Syed M. Alam ,  Ritwik Chatterjee ,  Shahid Rauf

IPC分类号： H01L21/768

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for achieving a through-substrate via through a substrate having active circuitry on a first major surface begins by forming a hole into the substrate through the first major surface. The hole is lined with a conductive layer. A dielectric layer is deposited over the conductive layer. This deposition is performed in a manner that causes the dielectric layer to be substantially conformal. Conductive material is formed over first dielectric layer. A second major surface of the substrate is etched to expose the conductive material.

摘要翻译： 通过在第一主表面上具有有源电路的基板实现贯通基板通孔的方法首先通过第一主表面在基板中形成孔。 孔内衬有导电层。 介电层沉积在导电层上。 这种沉积以使介电层基本上保形的方式进行。 导电材料形成在第一介电层上。 蚀刻衬底的第二主表面以暴露导电材料。

公开(公告)号：US07807572B2

公开(公告)日：2010-10-05

申请号：US11969368

申请日：2008-01-04

申请人： Varughese Mathew ,  Eddie Acosta ,  Ritwik Chatterjee ,  Sam S. Garcia

发明人： Varughese Mathew ,  Eddie Acosta ,  Ritwik Chatterjee ,  Sam S. Garcia

IPC分类号： H01L21/44

CPC分类号： H01L24/11 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05026 ,  H01L2224/05027 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05572 ,  H01L2224/05611 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/16 ,  H01L2224/81208 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/00014

摘要： A method forms a micropad to an external contact of a first semiconductor device. A stud of copper is formed over the external contact. The stud extends above a surface of the first semiconductor device. The stud of copper is immersed in a solution of tin. The tin replaces at least 95 percent of the copper of the stud and preferably more than 99 percent. The result is a tin micropad that has less than 5 percent copper by weight. Since the micropad is substantially pure tin, intermetallic bonds will not form during the time while the micropads of the first semiconductor device are not bonded. Smaller micropad dimensions result since intermetallic bonds do not form. When the first semiconductor device is bonded to an overlying second semiconductor device, the bond dimensions do not significantly increase the height of stacked chips.

摘要翻译： 一种方法形成微型至第一半导体器件的外部接触。 在外部触点上形成铜钉。 螺柱在第一半导体器件的表面之上延伸。 将铜柱浸入锡溶液中。 锡替代至少95％的螺柱铜，优选超过99％。 结果是具有小于5重量％铜的锡微粉末。 由于微电极基本上是纯锡，所以在第一半导体器件的微型焊盘未被接合的时间内，金属间键不会形成。 因为不形成金属间键，因此产生较小的微尺寸尺寸。 当第一半导体器件结合到上覆的第二半导体器件时，焊接尺寸不会显着增加堆叠芯片的高度。

公开(公告)号：US07579258B2

公开(公告)日：2009-08-25

申请号：US11339132

申请日：2006-01-25

申请人： Ritwik Chatterjee

发明人： Ritwik Chatterjee

IPC分类号： H01L21/30 ,  H01L21/46 ,  H01L21/4763

CPC分类号： H01L21/76885 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L25/50 ,  H01L2224/114 ,  H01L2224/116 ,  H01L2224/13021 ,  H01L2224/13099 ,  H01L2224/812 ,  H01L2224/81801 ,  H01L2225/06513 ,  H01L2924/0001 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/19043

摘要： A semiconductor device and method has interconnects with adjoining reservoir openings. A dielectric layer is formed as part of an uppermost of the one or more interconnect layers. Openings formed in the dielectric layer result in modified portions of the dielectric layer along portions of sidewalls of the openings. The openings are filled with a conductive material, such as metal. An exposed portion of the dielectric layer is removed to form protruding pads of the conductive material extending above the dielectric layer. Reservoir openings are formed adjacent the protruding pads by removing the modified portions of the dielectric layer. When the semiconductor device is bonded with another device, either a wafer or a die, laterally flowing metal collects in the reservoir openings and ensures that a reliable electrical connection is made between the semiconductor device and the other device.

摘要翻译： 半导体器件和方法与相邻的储存器开口互连。 介电层形成为一个或多个互连层的最上部的一部分。 在电介质层中形成的开口导致电介质层沿着开口的侧壁的部分的改性部分。 开口填充有诸如金属的导电材料。 去除电介质层的暴露部分以形成在电介质层上方延伸的导电材料的突出垫。 通过去除介电层的改性部分，在突出垫附近形成储存开口。 当半导体器件与另一器件接合时，晶片或晶片，横向流动的金属聚集在储存器开口中并且确保在半导体器件与另一器件之间形成可靠的电连接。

公开(公告)号：US20090176366A1

公开(公告)日：2009-07-09

申请号：US11969368

申请日：2008-01-04

申请人： Varughese Mathew ,  Eddie Acosta ,  Ritwik Chatterjee ,  Sam S. Garcia

发明人： Varughese Mathew ,  Eddie Acosta ,  Ritwik Chatterjee ,  Sam S. Garcia

IPC分类号： H01L21/288

CPC分类号： H01L24/11 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05026 ,  H01L2224/05027 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05572 ,  H01L2224/05611 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/16 ,  H01L2224/81208 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/00014

摘要： A method forms a micropad to an external contact of a first semiconductor device. A stud of copper is formed over the external contact. The stud extends above a surface of the first semiconductor device. The stud of copper is immersed in a solution of tin. The tin replaces at least 95 percent of the copper of the stud and preferably more than 99 percent. The result is a tin micropad that has less than 5 percent copper by weight. Since the micropad is substantially pure tin, intermetallic bonds will not form during the time while the micropads of the first semiconductor device are not bonded. Smaller micropad dimensions result since intermetallic bonds do not form. When the first semiconductor device is bonded to an overlying second semiconductor device, the bond dimensions do not significantly increase the height of stacked chips.

摘要翻译： 一种方法形成微型至第一半导体器件的外部接触。 在外部触点上形成铜钉。 螺柱在第一半导体器件的表面之上延伸。 将铜柱浸入锡溶液中。 锡替代至少95％的螺柱铜，优选超过99％。 结果是具有小于5重量％铜的锡微粉末。 由于微电极基本上是纯锡，所以在第一半导体器件的微型焊盘未被接合的时间内，金属间键不会形成。 因为不形成金属间键，因此产生较小的微尺寸尺寸。 当第一半导体器件结合到上覆的第二半导体器件时，焊接尺寸不会显着增加堆叠芯片的高度。

公开(公告)号：US20070170584A1

公开(公告)日：2007-07-26

申请号：US11339132

申请日：2006-01-25

申请人： Ritwik Chatterjee

发明人： Ritwik Chatterjee

IPC分类号： H01L23/48

CPC分类号： H01L21/76885 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L25/50 ,  H01L2224/114 ,  H01L2224/116 ,  H01L2224/13021 ,  H01L2224/13099 ,  H01L2224/812 ,  H01L2224/81801 ,  H01L2225/06513 ,  H01L2924/0001 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/19043

摘要： A semiconductor device and method has interconnects with adjoining reservoir openings. A dielectric layer is formed as part of an uppermost of the one or more interconnect layers. Openings formed in the dielectric layer result in modified portions of the dielectric layer along portions of sidewalls of the openings. The openings are filled with a conductive material, such as metal. An exposed portion of the dielectric layer is removed to form protruding pads of the conductive material extending above the dielectric layer. Reservoir openings are formed adjacent the protruding pads by removing the modified portions of the dielectric layer. When the semiconductor device is bonded with another device, either a wafer or a die, laterally flowing metal collects in the reservoir openings and ensures that a reliable electrical connection is made between the semiconductor device and the other device.

摘要翻译： 半导体器件和方法与相邻的储存器开口互连。 介电层形成为一个或多个互连层的最上部的一部分。 在电介质层中形成的开口导致电介质层沿着开口的侧壁的部分的改性部分。 开口填充有诸如金属的导电材料。 去除电介质层的暴露部分以形成在电介质层上方延伸的导电材料的突出垫。 通过去除介电层的改性部分，在突出垫附近形成储存开口。 当半导体器件与另一器件接合时，晶片或晶片，横向流动的金属聚集在储存器开口中并且确保在半导体器件与另一器件之间形成可靠的电连接。

公开(公告)号：US08586474B2

公开(公告)日：2013-11-19

申请号：US13040797

申请日：2011-03-04

申请人： Ritwik Chatterjee ,  Eddie Acosta ,  Sam S. Garcia ,  Varughese Mathew

发明人： Ritwik Chatterjee ,  Eddie Acosta ,  Sam S. Garcia ,  Varughese Mathew

IPC分类号： H01L21/44

CPC分类号： H01L21/76898

摘要： A method for forming a via, comprising (a) providing a structure comprising a mask (210) disposed on a semiconductor substrate (203), wherein the structure has an opening (215) defined therein which extends through the mask and into the substrate, and wherein the mask comprises a first electrically conductive layer; (b) depositing a second electrically conductive layer (219) such that the second conductive layer is in electrical contact with the first conductive layer, the second conductive layer having a first portion which extends over the surfaces of the opening and a second portion which extends over a portion of the mask adjacent to the opening; (c) removing the second portion of the second conductive layer; and (d) depositing a first metal (221) over the first portion of the second conductive layer.

摘要翻译： 一种用于形成通孔的方法，包括（a）提供包括设置在半导体衬底（203）上的掩模（210）的结构，其中所述结构具有限定在其中的开口（215），所述开口延伸穿过所述掩模并进入所述衬底， 并且其中所述掩模包括第一导电层; （b）沉积第二导电层（219），使得所述第二导电层与所述第一导电层电接触，所述第二导电层具有在所述开口的表面上延伸的第一部分，所述第二部分延伸 在面罩的与开口相邻的一部分上方; （c）去除第二导电层的第二部分; 和（d）在第二导电层的第一部分上沉积第一金属（221）。

公开(公告)号：US08581383B2

公开(公告)日：2013-11-12

申请号：US12877193

申请日：2010-09-08

申请人： Scott K. Pozder ,  Ritwik Chatterjee

发明人： Scott K. Pozder ,  Ritwik Chatterjee

IPC分类号： H01L23/48

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05582 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05684 ,  H01L2224/06102 ,  H01L2224/10135 ,  H01L2224/10165 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/1403 ,  H01L2224/14517 ,  H01L2224/16 ,  H01L2224/16503 ,  H01L2224/81136 ,  H01L2224/81141 ,  H01L2224/81801 ,  H01L2224/83365 ,  H01L2224/83385 ,  H01L2225/06513 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10329 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/01007

摘要： A die-on-die assembly has a first die (10) and a second die (50). The first die (10) has a first contact extension (28,42) and a peg (32,44,45) extending a first height above the first die. The second die (50) has a second contact extension (68) connected to the first contact extension and has a containing feature (62) extending a second height above the second die surrounding the peg. The peg extends past the containing feature. Because the peg extends past the containing feature, lateral movement between the first and second die can cause the peg to come in contact with and be constrained by the containing feature. The peg and containing feature are thus useful in constraining movement between the first and second die.

摘要翻译： 模具上的模具组件具有第一模具（10）和第二模具（50）。 第一模具（10）具有延伸第一模具上方的第一高度的第一接触延伸部（28,42）和钉（32,44,45）。 第二模具（50）具有连接到第一接触延伸部的第二接触延伸部（68），并且具有延伸在围绕钉的第二模具上方的第二高度的容纳特征（62）。 钉子延伸穿过包含的特征。 因为钉延伸穿过容纳特征，所以第一和第二管芯之间的横向移动可以使钉与接合特征接触并受约束。 因此，钉和容纳特征可用于限制第一和第二管芯之间的运动。