公开(公告)号：US09257082B2

公开(公告)日：2016-02-09

申请号：US12872861

申请日：2010-08-31

申请人： Hajime Kimura ,  Kengo Akimoto ,  Masashi Tsubuku ,  Toshinari Sasaki

发明人： Hajime Kimura ,  Kengo Akimoto ,  Masashi Tsubuku ,  Toshinari Sasaki

IPC分类号： G09G3/36

CPC分类号： H01L29/78693 ,  G09G3/3648 ,  G09G2300/0842 ,  H01L27/1225 ,  H01L29/78618

摘要： A display device including a pixel having a memory. The pixel includes at least a display element, a capacitor, an inverter, and a switch. The switch is controlled with a signal held in the capacitor and a signal output from the inverter so that voltage is supplied to the display element. The inverter and the switch can be constituted by transistors with the same polarity. A semiconductor layer included in the pixel may be formed using a light-transmitting material. Moreover, a gate electrode, a drain electrode, and a capacitor electrode may be formed using a light-transmitting conductive layer. The pixel is formed using a light-transmitting material in such a manner, whereby the display device can be a transmissive display device while including a pixel having a memory.

摘要翻译： 一种显示装置，包括具有存储器的像素。 像素至少包括显示元件，电容器，反相器和开关。 开关由保持在电容器中的信号和从逆变器输出的信号控制，使得电压被提供给显示元件。 逆变器和开关可以由具有相同极性的晶体管构成。 可以使用透光材料形成包括在像素中的半导体层。 此外，可以使用透光导电层来形成栅电极，漏电极和电容器电极。 以这种方式使用透光材料形成像素，由此显示装置可以是包括具有存储器的像素的透射显示装置。

公开(公告)号：US08766608B2

公开(公告)日：2014-07-01

申请号：US12909629

申请日：2010-10-21

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Kei Takahashi ,  Masashi Tsubuku ,  Kosei Noda

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Kei Takahashi ,  Masashi Tsubuku ,  Kosei Noda

IPC分类号： G05F1/00 ,  H01L27/14

CPC分类号： H01L27/1225 ,  H01L27/1255 ,  H01L29/7869 ,  H02M3/07 ,  H02M3/158

摘要： A voltage regulator circuit includes a transistor and a capacitor. The transistor includes a gate, a source, and a drain, a first signal is inputted to one of the source and the drain, a second signal which is a clock signal is inputted to the gate, an oxide semiconductor layer is used for a channel formation layer, and an off-state current is less than or equal to 10 aA/μm. The capacitor includes a first electrode and a second electrode, the first electrode is electrically connected to the other of the source and the drain of the transistor, and a high power source voltage and a low power source voltage are alternately applied to the second electrode.

摘要翻译： 电压调节器电路包括晶体管和电容器。 晶体管包括栅极，源极和漏极，第一信号被输入到源极和漏极中的一个，作为时钟信号的第二信号被输入到栅极，氧化物半导体层被用于沟道 形成层，截止电流小于或等于10AA /μm。 电容器包括第一电极和第二电极，第一电极电连接到晶体管的源极和漏极中的另一个，并且高电源电压和低电源电压交替施加到第二电极。

公开(公告)号：US08742422B2

公开(公告)日：2014-06-03

申请号：US12871148

申请日：2010-08-30

申请人： Masayuki Sakakura ,  Yoshiaki Oikawa ,  Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba

发明人： Masayuki Sakakura ,  Yoshiaki Oikawa ,  Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba

IPC分类号： H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036

CPC分类号： H01L27/124 ,  G02F1/134309 ,  G02F1/13454 ,  G02F1/1368 ,  G02F2202/10 ,  H01L27/1225 ,  H01L27/1255

摘要： The semiconductor device includes a driver circuit portion including a driver circuit and a pixel portion including a pixel. The pixel includes a gate electrode layer having a light-transmitting property, a gate insulating layer, a source electrode layer and a drain electrode layer each having a light-transmitting property provided over the gate insulating layer, an oxide semiconductor layer covering top surfaces and side surfaces of the source electrode layer and the drain electrode layer and provided over the gate electrode layer with the gate insulating layer therebetween, a conductive layer provided over part of the oxide semiconductor layer and having a lower resistance than the source electrode layer and the drain electrode layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer.

摘要翻译： 半导体器件包括驱动器电路部分，其包括驱动器电路和包括像素的像素部分。 像素包括具有透光性的栅极电极层，栅极绝缘层，源极电极层和漏极电极层，其各自具有设置在栅极绝缘层上的透光性，覆盖顶表面的氧化物半导体层和 源极电极层和漏极电极层的侧面，并且在栅电极层之间设置有栅极绝缘层，导电层设置在氧化物半导体层的一部分上，并且具有比源极电极层和漏极 电极层和与氧化物半导体层的一部分接触的氧化物绝缘层。

公开(公告)号：US08492764B2

公开(公告)日：2013-07-23

申请号：US12848375

申请日：2010-08-02

申请人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Yoshiaki Oikawa

发明人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Yoshiaki Oikawa

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01L33/00

CPC分类号： H01L27/3262 ,  H01L27/1225 ,  H01L27/322 ,  H01L27/3248 ,  H01L51/5278 ,  H01L2251/5323

摘要： A light-emitting device in which plural kinds of circuits are formed over one substrate and plural kinds of thin film transistors in accordance with characteristics of the plural kinds of circuits are included. An inverted-coplanar thin film transistor including an oxide semiconductor layer which overlaps a source and drain electrode layers is used as a thin film transistor for a pixel, a channel-stop thin film transistor is used as a thin film transistor for a driver circuit, and a color filter layer is provided between the thin film transistor for a pixel and a light-emitting element so as to overlap the light-emitting element which is electrically connected to the thin film transistor for a pixel.

摘要翻译： 包括根据多种电路的特性，在一个基板上形成多种电路的多个薄膜晶体管的发光器件。 包括与源极和漏极层重叠的氧化物半导体层的倒置共面薄膜晶体管用作像素的薄膜晶体管，通道停止薄膜晶体管用作用于驱动电路的薄膜晶体管， 并且在用于像素的薄膜晶体管和发光元件之间设置滤色器层，以与与像素的薄膜晶体管电连接的发光元件重叠。

公开(公告)号：US08488077B2

公开(公告)日：2013-07-16

申请号：US13363405

申请日：2012-02-01

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Masayuki Sakakura ,  Yoshiaki Oikawa

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Masayuki Sakakura ,  Yoshiaki Oikawa

IPC分类号： G02F1/136

CPC分类号： H01L21/477 ,  G02F1/133345 ,  G02F1/1368 ,  H01L21/02565 ,  H01L21/02664 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1259 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

摘要： An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

公开(公告)号：US08421068B2

公开(公告)日：2013-04-16

申请号：US12904565

申请日：2010-10-14

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Hiroyuki Miyake ,  Kei Takahashi ,  Kouhei Toyotaka ,  Masashi Tsubuku ,  Kosei Noda ,  Hideaki Kuwabara

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Hiroyuki Miyake ,  Kei Takahashi ,  Kouhei Toyotaka ,  Masashi Tsubuku ,  Kosei Noda ,  Hideaki Kuwabara

IPC分类号： H01L29/10 ,  H01L29/12 ,  H01L29/04 ,  H01L31/00 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L29/26 ,  G06K19/07758 ,  G11C7/00 ,  G11C19/28 ,  H01L21/8236 ,  H01L23/66 ,  H01L27/0883 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78609 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2223/6677 ,  H02M3/07

摘要： An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.

摘要翻译： 目的是减少用于LSI，CPU或存储器的晶体管的漏电流和寄生电容。 使用薄膜晶体管制造诸如LSI，CPU或存储器的半导体集成电路，其中使用氧化物半导体形成沟道形成区域，该氧化物半导体通过去除作为电子给体的杂质而成为本征或本质上的半导体 （供体），并且具有比硅半导体更大的能隙。 通过使用具有充分降低的氢浓度的高度净化的氧化物半导体层的薄膜晶体管，可以实现由于漏电流而具有低功耗的半导体器件。

公开(公告)号：US08350621B2

公开(公告)日：2013-01-08

申请号：US13568186

申请日：2012-08-07

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Atsushi Hirose ,  Masashi Tsubuku ,  Kosei Noda

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Atsushi Hirose ,  Masashi Tsubuku ,  Kosei Noda

IPC分类号： H01L25/00

CPC分类号： H01L27/1225 ,  H01L21/823412 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/156 ,  H01L27/3213 ,  H01L29/24 ,  H01L29/36 ,  H01L29/7869 ,  H01L29/78693 ,  H01L33/025 ,  H01L2924/0002 ,  H04M1/0266 ,  H04R1/02 ,  H01L2924/00

摘要： An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.

摘要翻译： 目的是获得使用其中使用氧化物半导体层的薄膜晶体管，在检测信号和宽动态范围中具有高灵敏度的半导体器件。 使用具有作为沟道形成层的功能的氧化物半导体的薄膜晶体管形成模拟电路，其氢浓度为5×1019个原子/ cm3以下，并且在该状态下基本上起绝缘体的作用 其中不产生电场。 因此，可以获得在检测信号中具有高灵敏度和宽动态范围的半导体器件。

公开(公告)号：US20110101942A1

公开(公告)日：2011-05-05

申请号：US12909629

申请日：2010-10-21

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Kei Takahashi ,  Masashi Tsubuku ,  Kosei Noda

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Kei Takahashi ,  Masashi Tsubuku ,  Kosei Noda

IPC分类号： G05F1/10 ,  H01L29/12

CPC分类号： H01L27/1225 ,  H01L27/1255 ,  H01L29/7869 ,  H02M3/07 ,  H02M3/158

摘要： A voltage regulator circuit includes a transistor and a capacitor. The transistor includes a gate, a source, and a drain, a first signal is inputted to one of the source and the drain, a second signal which is a clock signal is inputted to the gate, an oxide semiconductor layer is used for a channel formation layer, and an off-state current is less than or equal to 10 aA/μm. The capacitor includes a first electrode and a second electrode, the first electrode is electrically connected to the other of the source and the drain of the transistor, and a high power source voltage and a low power source voltage are alternately applied to the second electrode.

摘要翻译： 电压调节器电路包括晶体管和电容器。 晶体管包括栅极，源极和漏极，第一信号被输入到源极和漏极中的一个，作为时钟信号的第二信号被输入到栅极，氧化物半导体层被用于沟道 形成层，截止电流小于或等于10AA /μm。 电容器包括第一电极和第二电极，第一电极电连接到晶体管的源极和漏极中的另一个，并且高电源电压和低电源电压交替施加到第二电极。

公开(公告)号：US20110090204A1

公开(公告)日：2011-04-21

申请号：US12904634

申请日：2010-10-14

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Hiroyuki Miyake ,  Masashi Tsubuku ,  Kosei Noda

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Hiroyuki Miyake ,  Masashi Tsubuku ,  Kosei Noda

IPC分类号： G09G3/36 ,  G06F3/038

CPC分类号： G02F1/1368 ,  G09G3/3611 ,  G09G3/3648 ,  G09G3/3674 ,  G09G3/3677 ,  G09G5/18 ,  G09G2310/0286 ,  G09G2320/103 ,  G09G2330/021 ,  G09G2330/022 ,  G09G2330/027 ,  H01L27/1225 ,  H01L29/7869

摘要： A liquid crystal display device includes: a driver circuit portion; a pixel portion; a signal generation circuit for generating a control signal for driving the driver circuit portion and an image signal which is supplied to the pixel portion; a memory circuit; a comparison circuit for detecting a difference of image signals for a series of frame periods among image signals stored for respective frame periods in the memory circuit; a selection circuit which selects and outputs the image signals for the series of frame periods when the difference is detected in the comparison circuit; and a display control circuit which supplies the control signal and the image signals output from the selection circuit, to the driver circuit portion when the difference is detected in the comparison circuit, and stops supplying the control signal to the driver circuit portion when the difference is not detected in the comparison circuit.

摘要翻译： 液晶显示装置包括：驱动电路部分; 像素部分; 信号产生电路，用于产生用于驱动驱动电路部分的控制信号和提供给像素部分的图像信号; 存储电路; 比较电路，用于检测在存储电路中为各个帧周期存储的图像信号中的一系列帧周期的图像信号的差异; 选择电路，当在比较电路中检测到差异时，选择并输出用于一系列帧周期的图像信号; 以及显示控制电路，当在比较电路中检测到差异时，将从选择电路输出的控制信号和图像信号提供给驱动电路部分，并且当差值为 在比较电路中未检测到。