公开(公告)号：US11049908B2

公开(公告)日：2021-06-29

申请号：US16238610

申请日：2019-01-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro Ishisone ,  Satoshi Seo ,  Yusuke Nonaka ,  Nobuharu Ohsawa

IPC: H01L27/32 ,  H01L51/50 ,  H01L51/52 ,  H01L51/00

Abstract: A multicolor light-emitting element that utilizes fluorescence and phosphorescence and is advantageous for practical application is provided. The light-emitting element has a stacked-layer structure of a first light-emitting layer containing a host material and a fluorescent substance and a second light-emitting layer containing two kinds of organic compounds and a substance that can convert triplet excitation energy into luminescence. Note that light emitted from the first light-emitting layer has an emission peak on the shorter wavelength side than light emitted from the second light-emitting layer.

公开(公告)号：US10686153B2

公开(公告)日：2020-06-16

申请号：US15911225

申请日：2018-03-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro Ishisone ,  Satoshi Seo ,  Yusuke Nonaka ,  Nobuharu Ohsawa

IPC: H01L51/50 ,  H01L51/00

Abstract: Provided is a light-emitting element which includes a first electrode, a second electrode over the first electrode, and first and second light-emitting layers therebetween. The first light-emitting layer contains a first host material and a first light-emitting material, and the second light-emitting layer contains a second host material and a second light-emitting material. The first light-emitting material is a fluorescent material, and the second light-emitting material is a phosphorescent material. The level of the lowest triplet excited state (T1 level) of the first light-emitting material is higher than the T1 level of the first host material. A light-emitting device, an electronic device, and a lighting device including the light-emitting element are further provided.

公开(公告)号：US10686152B2

公开(公告)日：2020-06-16

申请号：US16217231

申请日：2018-12-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi Seo ,  Takahiro Ishisone ,  Nobuharu Ohsawa ,  Yusuke Nonaka ,  Toshiki Sasaki

IPC: H01L51/50 ,  G09G3/3225 ,  H01L27/32 ,  H01L51/52

Abstract: Emission efficiency of a light-emitting element is improved. The light-emitting element has a pair of electrodes and an EL layer between the pair of electrodes. The EL layer includes a first light-emitting layer and a second light-emitting layer. The first light-emitting layer includes a fluorescent material and a host material. The second light-emitting layer includes a phosphorescent material, a first organic compound, and a second organic compound. An emission spectrum of the second light-emitting layer has a peak in a yellow wavelength region. The first organic compound and the second organic compound form an exciplex.

公开(公告)号：US10468536B2

公开(公告)日：2019-11-05

申请号：US16381479

申请日：2019-04-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya Honda ,  Masashi Tsubuku ,  Yusuke Nonaka ,  Takashi Shimazu ,  Shunpei Yamazaki

IPC: H01L29/786 ,  G02F1/1337 ,  H01L29/24 ,  H01L29/51 ,  G02F1/1333 ,  H01L27/12 ,  H01L29/04 ,  G02F1/1339 ,  G02F1/1343 ,  H01L29/66 ,  H01L21/02 ,  H01L27/32

Abstract: A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion.

公开(公告)号：US10103277B2

公开(公告)日：2018-10-16

申请号：US15648943

申请日：2017-07-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masashi Tsubuku ,  Kengo Akimoto ,  Hiroki Ohara ,  Tatsuya Honda ,  Takatsugu Omata ,  Yusuke Nonaka ,  Masahiro Takahashi ,  Akiharu Miyanaga

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/04 ,  H01L29/10

Abstract: A method comprising a step of forming an oxide semiconductor film over a substrate by a sputtering method while heating the substrate at a temperature of higher than 200° C. and lower than or equal to 400° C. is provided. The oxide semiconductor film comprises a crystalline region and is in a non-single-crystal state. The step of forming the oxide semiconductor film is performed by using a sputtering target comprising indium, gallium, zinc and oxygen and a sputtering gas comprising at least one of a rare gas and oxygen.

公开(公告)号：US09711655B2

公开(公告)日：2017-07-18

申请号：US15137613

申请日：2016-04-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masashi Tsubuku ,  Kengo Akimoto ,  Hiroki Ohara ,  Tatsuya Honda ,  Takatsugu Omata ,  Yusuke Nonaka ,  Masahiro Takahashi ,  Akiharu Miyanaga

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/10 ,  H01L29/24

CPC classification number: H01L29/78696 ,  H01L29/045 ,  H01L29/1033 ,  H01L29/247 ,  H01L29/7869 ,  H01L29/78693

Abstract: A semiconductor device comprising a first metal oxide film, an oxide semiconductor film, a second metal oxide film, a gate insulating film, and a gate electrode is provided. The oxide semiconductor film comprises an In—Ga—Zn—O-based metal oxide. The second metal oxide film comprises a Ga—Zn—O-based metal oxide. An amount of substance of zinc oxide with respect to gallium oxide is lower than 50% in the Ga—Zn—O-based metal oxide.

公开(公告)号：US09368742B2

公开(公告)日：2016-06-14

申请号：US14548621

申请日：2014-11-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takuya Kawata ,  Nobuharu Ohsawa ,  Yusuke Nonaka ,  Takahiro Ishisone ,  Satoshi Seo

IPC: H01L51/50 ,  H01L51/00

CPC classification number: H01L51/504 ,  H01L51/0052 ,  H01L51/0054 ,  H01L51/0058 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0072 ,  H01L51/0074 ,  H01L51/0085 ,  H01L51/0097 ,  H01L51/5016 ,  H01L51/5028 ,  H01L2251/5376

Abstract: A light-emitting element includes a stack of a first light-emitting layer emitting fluorescent light and a second light-emitting layer emitting phosphorescent light between a pair of electrodes. The second light-emitting layer includes a first layer in which an exciplex is formed, a second layer in which an exciplex is formed, and a third layer in which an exciplex is formed. The second layer is located over the first layer, and the third layer is located over the second layer. An emission peak wavelength of the second layer is longer than an emission peak wavelength of the first layer and an emission peak wavelength of the third layer.

Abstract translation: 发光元件包括发射荧光的第一发光层和在一对电极之间发射磷光的第二发光层的叠层。 第二发光层包括其中形成激元复合体的第一层，形成激元复合体的第二层，以及形成激元复合体的第三层。 第二层位于第一层之上，第三层位于第二层之上。 第二层的发光峰值波长比第一层的发光峰值波长和第三层的发射峰值波长长。

公开(公告)号：US09117919B2

公开(公告)日：2015-08-25

申请号：US14278634

申请日：2014-05-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yusuke Nonaka ,  Takayuki Inoue ,  Masashi Tsubuku ,  Kengo Akimoto ,  Akiharu Miyanaga

IPC: H01L29/12 ,  H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L27/01 ,  H01L27/12 ,  H01L31/0392 ,  H01L29/786

CPC classification number: H01L29/7869 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/04 ,  H01L29/24 ,  H01L29/78603

Abstract: An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al2O3, α-Ga2O3, In2O3, Ti2O3, V2O3, Cr2O3, or α-Fe2O3) is used.

Abstract translation: 本发明的目的是提供一种具有稳定的电气特性和高可靠性的氧化物半导体膜的半导体装置。 通过在绝缘表面上形成厚度为1nm至10nm的第一材料膜（具有六方晶体结构的膜）形成第一和第二材料膜的叠层，并形成具有六方晶系结构的第二材料膜（ 使用第一材料膜作为核的结晶氧化物半导体膜）。 作为第一材料膜，具有纤锌矿晶体结构的材料膜（例如氮化镓或氮化铝）或具有刚玉晶体结构的材料膜（α-Al 2 O 3，α-Ga 2 O 3，In 2 O 3，Ti 2 O 3，V 2 O 3，Cr 2 O 3，或 α-Fe 2 O 3）。

公开(公告)号：US20150053958A1

公开(公告)日：2015-02-26

申请号：US14467532

申请日：2014-08-25

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takahiro Ishisone ,  Satoshi Seo ,  Yusuke Nonaka ,  Nobuharu Ohsawa

IPC: H01L51/50 ,  H01L51/52

CPC classification number: H01L27/3211 ,  H01L27/3244 ,  H01L51/0052 ,  H01L51/0054 ,  H01L51/0058 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0072 ,  H01L51/0074 ,  H01L51/0085 ,  H01L51/5016 ,  H01L51/5024 ,  H01L51/504 ,  H01L51/5056 ,  H01L51/5072 ,  H01L51/5088 ,  H01L51/5092 ,  H01L51/5096 ,  H01L51/5206 ,  H01L51/5234 ,  H01L51/524 ,  H01L51/5262 ,  H01L51/5284 ,  H01L2251/552

Abstract: A multicolor light-emitting element that utilizes fluorescence and phosphorescence and is advantageous for practical application is provided. The light-emitting element has a stacked-layer structure of a first light-emitting layer containing a host material and a fluorescent substance and a second light-emitting layer containing two kinds of organic compounds and a substance that can convert triplet excitation energy into luminescence. Note that light emitted from the first light-emitting layer has an emission peak on the shorter wavelength side than light emitted from the second light-emitting layer.

Abstract translation: 提供利用荧光和磷光并且有利于实际应用的多色发光元件。 发光元件具有包含主体材料和荧光物质的第一发光层和含有两种有机化合物的第二发光层和可将三重态激发能转化为发光的物质的层叠结构 。 注意，从第一发光层发射的光在比第二发光层发射的光更短的波长侧具有发光峰。

公开(公告)号：US08680522B2

公开(公告)日：2014-03-25

申请号：US13832479

申请日：2013-03-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masashi Tsubuku ,  Kengo Akimoto ,  Hiroki Ohara ,  Tatsuya Honda ,  Takatsugu Omata ,  Yusuke Nonaka ,  Masahiro Takahashi ,  Akiharu Miyanaga

IPC: H01L29/12

CPC classification number: H01L29/78696 ,  H01L29/045 ,  H01L29/1033 ,  H01L29/247 ,  H01L29/7869 ,  H01L29/78693

Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.

Abstract translation: 提供了具有更稳定的导电性的氧化物半导体膜。 此外，通过使用氧化物半导体膜提供具有稳定的电特性和高可靠性的半导体器件。 氧化物半导体膜包括结晶区域，并且结晶区域包括其中a-b平面基本上平行于膜的表面并且c轴基本上垂直于膜的表面的晶体; 氧化物半导体膜具有稳定的导电性，并且相对于可见光，紫外线等的照射而言更加电稳定。 通过使用这种用于晶体管的氧化物半导体膜，可以提供具有稳定电特性的高可靠性半导体器件。