公开(公告)号：US08304810B2

公开(公告)日：2012-11-06

申请号：US12505942

申请日：2009-07-20

申请人： Nobuyuki Sugii ,  Kiyokazu Nakagawa ,  Shinya Yamaguchi ,  Masanobu Miyao

发明人： Nobuyuki Sugii ,  Kiyokazu Nakagawa ,  Shinya Yamaguchi ,  Masanobu Miyao

IPC分类号： H01L29/66

CPC分类号： H01L21/823807 ,  H01L29/1054 ,  H01L29/7782 ,  H01L29/7848

摘要： In order to provide a semiconductor device having a field effect transistor with a low power consumption and a high speed by use of the combination of Si and an element such as Ge, C or the like of the same group as Si, a strain is applied by a strain applying semiconductor layer 2 to a channel forming layer I having a channel of the field effect transistor formed therein so that the mobility of carriers in the channel is made larger than the mobility of carriers in that material of the channel forming layer which is unstrained.

摘要翻译： 为了提供一种具有低功耗和高速的场效晶体管的半导体器件，其通过使用Si和诸如与Si相同的组的诸如Ge，C等元素的组合，施加应变 通过将半导体层2施加到其中形成有场效应晶体管的沟道的沟道形成层I的应变，使得沟道中的载流子的迁移率大于沟道形成层的材料中的载流子的迁移率， 无限制

公开(公告)号：US07317207B2

公开(公告)日：2008-01-08

申请号：US11146016

申请日：2005-06-07

申请人： Shinya Yamaguchi ,  Masanobu Miyao ,  Nobuyuki Sugii ,  Seang-kee Park ,  Kiyokazu Nakagawa

发明人： Shinya Yamaguchi ,  Masanobu Miyao ,  Nobuyuki Sugii ,  Seang-kee Park ,  Kiyokazu Nakagawa

IPC分类号： H01L29/786

CPC分类号： H01L29/78696 ,  G09G3/3648 ,  G09G2300/0408 ,  H01L27/1277 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/045 ,  H01L29/41733 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78666 ,  H01L29/78669 ,  H01L29/78675 ,  H01L29/78678

摘要： To provide TFT of improved low-temperature polycrystalline layer that has higher electron mobility and assures less fluctuation in manufacture in view of realizing a liquid-crystal display device having a large display area by utilizing a glass substrate.A TFT having higher electron mobility can be realized within the predetermined range of characteristic fluctuation by utilizing the semiconductor thin-film (called quasi single crystal thin-film) formed of poly-crystal grain joined with the {111} twin-boundary of Diamond structure as the channel region (namely, active region) of TFT.

摘要翻译： 为了提供具有较高电子迁移率的改进的低温多晶层的TFT，并且鉴于通过利用玻璃基板实现具有大的显示面积的液晶显示装置，确保制造中的波动较小。 通过利用与金刚石结构的{111}双边界结合的多晶晶粒形成的半导体薄膜（称为准单晶薄膜），可以在特定波动的预定范围内实现具有较高电子迁移率的TFT 作为TFT的沟道区域（即有源区）。

公开(公告)号：US20050230683A1

公开(公告)日：2005-10-20

申请号：US11146016

申请日：2005-06-07

申请人： Shinya Yamaguchi ,  Masanobu Miyao ,  Nobuyuki Sugii ,  Seang-kee Park ,  Kiyokazu Nakagawa

发明人： Shinya Yamaguchi ,  Masanobu Miyao ,  Nobuyuki Sugii ,  Seang-kee Park ,  Kiyokazu Nakagawa

IPC分类号： G02F1/136 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/417 ,  H01L29/786

CPC分类号： H01L29/78696 ,  G09G3/3648 ,  G09G2300/0408 ,  H01L27/1277 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/045 ,  H01L29/41733 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78666 ,  H01L29/78669 ,  H01L29/78675 ,  H01L29/78678

摘要： To provide TFT of improved low-temperature polycrystalline layer that has higher electron mobility and assures less fluctuation in manufacture in view of realizing a liquid-crystal display device having a large display area by utilizing a glass substrate. A TFT having higher electron mobility can be realized within the predetermined range of characteristic fluctuation by utilizing the semiconductor thin-film (called quasi single crystal thin-film) formed of poly-crystal grain joined with the {111} twin-boundary of Diamond structure as the channel region (namely, active region) of TFT.

公开(公告)号：US06727514B2

公开(公告)日：2004-04-27

申请号：US09811561

申请日：2001-03-20

申请人： Seong-kee Park ,  Kiyokazu Nakagawa ,  Nobuyuki Sugii ,  Shinya Yamaguchi

发明人： Seong-kee Park ,  Kiyokazu Nakagawa ,  Nobuyuki Sugii ,  Shinya Yamaguchi

IPC分类号： H01L2906

CPC分类号： H01L27/1296 ,  H01L29/66742 ,  H01L29/78618 ,  H01L29/78684

摘要： At least one of a semiconductor thin-film for forming a picture display portion and a semiconductor thin-film for forming a peripheral circuit portion, which are accumulated on one common insulative substrate, is constructed with a semiconductor thin-film having a plural number of semiconductor crystalline portions formed to be divided and disposed in a matrix-like, and TFTs are provided in the semiconductor thin-film by bringing those semiconductor single crystal portions into active portions thereof. For that purpose, a crystallization accelerating material is adhered at the position of lattice points of a matrix and is treated with heating process, for forming the single crystal portions disposed in the matrix-like manner, so as to form the TFTs on the surface thereof, thereby completing the thin-film semiconductor integrated circuit device.

摘要翻译： 用于形成图像显示部分的半导体薄膜和积聚在一个公共绝缘基板上的用于形成外围电路部分的半导体薄膜中的至少一个由半导体薄膜构成，半导体薄膜具有多个 通过将这些半导体单晶部分置于其有效部分，半导体晶体部分被形成为分成矩阵状并且设置在半导体薄膜中。 为此，将结晶促进材料粘附在基体的晶格点的位置，并通过加热处理进行处理，以形成以矩阵状排列的单晶部分，从而在其表面上形成TFT 从而完成薄膜半导体集成电路器件。

公开(公告)号：US5376309A

公开(公告)日：1994-12-27

申请号：US116534

申请日：1993-09-03

申请人： Kazuyuki Hamada ,  Nobuyuki Sugii ,  Mitsunobu Wakata ,  Kohichi Kubo ,  Kiyotaka Matsuura ,  Hisao Yamauchi

发明人： Kazuyuki Hamada ,  Nobuyuki Sugii ,  Mitsunobu Wakata ,  Kohichi Kubo ,  Kiyotaka Matsuura ,  Hisao Yamauchi

IPC分类号： C01G25/00 ,  C01B35/04 ,  C01G1/00 ,  C01G27/00 ,  C04B35/58 ,  C30B29/10 ,  H01L29/26 ,  H01L39/22 ,  H01B1/00 ,  H01B1/02

CPC分类号： C04B35/58078 ,  C04B35/5805 ,  H01L29/26

摘要： Disclosed is a boride material for electronic elements, which is represented by a chemical formula of A.sub.1-x E.sub.x B.sub.12 (where A is Zr of Hf, E is Sc or Y, and 0.1.ltoreq.x.ltoreq.0.9) and the crystal system of which is a cubic one at a temperature not lower than its phase transition temperature and is a hexagonal one at a temperature not higher than its phase transition temperature. The boride material is prepared by mixing oxide powders or sulfate powders of the constitutive elements A and E and a boron powder followed by shaping the powder mixture and then sintering the shaped body.

摘要翻译： 公开了一种用于电子元件的硼化物材料，其由化学式A1-xExB12（其中A是Hf的Hf，E是Sc或Y，并且0.1