公开(公告)号：US11682689B2

公开(公告)日：2023-06-20

申请号：US17128604

申请日：2020-12-21

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Francois Roy ,  Sonarith Chhun

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/1464

Abstract: An electronic device includes a substrate semiconductor wafer with semiconductor portions separated from one another by through-passages. Electronic circuits and a dielectric layer with a network of electrical connections are formed at a front face of the substrate semiconductor wafer. Electrically conductive fillings are contained within the through-passages and are connected to the network of electrical connections. Interior dielectric layers for anti-diffusion protection are provided in the through-passages between the electrically conductive fillings and the semiconductor portions. Back side dielectric layers are joined to the interior dielectric layers.

公开(公告)号：US11581345B2

公开(公告)日：2023-02-14

申请号：US17122314

申请日：2020-12-15

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Francois Roy

IPC: H04N5/3745 ,  H01L27/146

Abstract: An image sensor includes a pixel with a photosensitive region accommodated within a semiconductor substrate and a MOS capacitive element with a conducting electrode electrically isolated by a dielectric layer. The dielectric layer forms an interface with both the photosensitive region and the semiconductor substrate, the interface of the dielectric layer including charge traps. A control circuit biases the electrode of the MOS capacitive element with a charge pumping signal designed to generate an alternation of successive inversion regimes and accumulation regimes in the photosensitive region. The charge pumping signal produces recombinations of photogenerated charges in the charge traps of the interface of the dielectric layer and the generation of a substrate current to empty recombined photogenerated charges.

公开(公告)号：US11387379B2

公开(公告)日：2022-07-12

申请号：US16789052

申请日：2020-02-12

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Francois Roy

IPC: H01L31/113 ,  H01L31/0224 ,  H01L27/146

Abstract: A semiconductor layer is doped with a first doping type and has an upper surface. A first electrode insulated from the semiconductor layer extending through the semiconductor layer from the upper surface. A second electrode insulated from the semiconductor layer extends through the semiconductor layer from the upper surface. The first and second electrodes are biased by a voltage to produce an electrostatic field within the semiconductor layer causing the formation of a depletion region. The depletion region responds to absorption of a photon with an avalanche multiplication that produces charges that are collected at first and second oppositely doped regions within the semiconductor substrate.

公开(公告)号：US20200066780A1

公开(公告)日：2020-02-27

申请号：US16547231

申请日：2019-08-21

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Francois Roy ,  Stephane Hulot ,  Andrej Suler ,  Nicolas Virollet

IPC: H01L27/146

Abstract: A semiconductor image sensor includes a plurality of pixels. Each pixel of the sensor includes a semiconductor substrate having opposite front and back sides and laterally delimited by a first insulating wall including a first conductive core insulated from the substrate, electron-hole pairs being capable of forming in the substrate due to a back-side illumination. A circuit is configured to maintain, during a first phase in a first operating mode, the first conductive core at a first potential and to maintain, during at least a portion of the first phase in a second operating mode, the first conductive core at a second potential different from the first potential.

公开(公告)号：US10475827B2

公开(公告)日：2019-11-12

申请号：US16035193

申请日：2018-07-13

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Francois Roy

IPC: H01L27/146

Abstract: An electronic image capture device includes a first portion and a second portion. The first portion is formed by a substrate wafer provided on one side with electronic circuits and a dielectric layer with a network of electrical connections and external electrical contacts on an outer surface. The second portion includes a pixel wafer capable of generating electrical signals under the effect of light, a substrate wafer mounted to the pixel wafer and provided with electronic circuits and a dielectric layer with a network of electrical connections and external electrical contacts on an outer surface. The outer surfaces and external electrical contacts are bonded to each other so as to mount the first portion to the second portion. A connection pad extends through a hole in the pixel wafer to make electrical connection to the network of electrical connections of the second portion.

公开(公告)号：US20190237499A1

公开(公告)日：2019-08-01

申请号：US15882482

申请日：2018-01-29

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Francois Roy

IPC: H01L27/146 ,  H04N5/374 ,  H04N5/378

CPC classification number: H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14645 ,  H04N5/3575 ,  H04N5/374 ,  H04N5/378

Abstract: In an embodiment, an image sensor includes a semiconductor region, a first doped region disposed over the semiconductor region, a ring shaped well disposed over the first doped region and surrounding parts of the first doped region, a second doped region formed within the ring shaped well and disposed over the first doped region, and a third doped region disposed over the second doped region. The ring shaped well is defined by a conductor surrounded by an insulator. The conductor is connected to a voltage terminal. The third doped region is more heavily doped than the second doped region, which is more heavily doped than the first region, and are all of the same doping type. The first doped region and the second doped region within the ring shaped well, form a potential barrier for controlling transfer of charge carriers from the first doped region to the third doped region.

公开(公告)号：US10362250B2

公开(公告)日：2019-07-23

申请号：US15985998

申请日：2018-05-22

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Francois Guyader ,  Francois Roy

IPC: H04N5/353 ,  H04N5/374 ,  H04N5/378 ,  H01L27/146

Abstract: A global shutter image sensor of a back-illuminated type includes a semiconductor substrate and pixels. Each pixel includes a photosensitive area, a storage area, a readout area and areas for transferring charges between these different areas. The image sensor includes, for each pixel, a protector extending at least partly into the substrate from the back of the substrate to ensure that the storage area is protected against back illumination.

公开(公告)号：US20190181180A1

公开(公告)日：2019-06-13

申请号：US15839011

申请日：2017-12-12

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Francois Roy

IPC: H01L27/148 ,  H01L27/146

Abstract: An imaging cell includes a skimming gate transistor coupled between a photosensitive charge node and an intermediate node and a transfer gate transistor coupled between the intermediate node and a sense node. The skimming gate transistor includes a vertical gate electrode structure formed by a first capacitive deep trench isolation extending into a substrate and a second capacitive deep trench isolation extending into the substrate. A channel of the skimming gate transistor is positioned between the first and second capacitive deep trench isolations. Each capacitive deep trench isolation is formed by a trench that is lined with an insulating liner and filled with a conductive or semiconductive material.

公开(公告)号：US20180366510A1

公开(公告)日：2018-12-20

申请号：US16112241

申请日：2018-08-24

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Francois Roy ,  Frédéric Lalanne ,  Pierre Emmanuel Marie Malinge

IPC: H01L27/146 ,  H04N5/378

CPC classification number: H01L27/14643 ,  H01L27/14612 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/14641 ,  H01L27/14689 ,  H04N5/378

Abstract: An image sensor device may include an array of image sensing pixels arranged in rows and columns. Each image sensing pixel may include an image sensing photodiode, a first source follower transistor coupled to the image sensing photodiode, and a switch coupled to the image sensing photodiode. Each image sensor device may include a second source follower transistor coupled to the switch, and a row selection transistor coupled to the first and second source follower transistors.

公开(公告)号：US20180278863A1

公开(公告)日：2018-09-27

申请号：US15995249

申请日：2018-06-01

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Francois Roy

IPC: H04N5/353 ,  H04N5/378 ,  H04N5/372 ,  H01L27/146 ,  H04N5/363

CPC classification number: H04N5/353 ,  H01L27/14614 ,  H01L27/1464 ,  H01L27/14643 ,  H04N5/363 ,  H04N5/372 ,  H04N5/378

Abstract: Each pixel of a global shutter back-side illuminated image sensor includes a photosensitive area. On a front surface, a first transistor includes a vertical ring-shaped electrode penetrating into the photosensitive area and laterally delimiting a memory area. The memory area penetrates into the photosensitive area less deeply than the insulated vertical ring-shaped electrode. A read area is formed in an intermediate area which is formed in the memory area. The memory area, the intermediate area and read area define a second transistor having an insulated horizontal electrode forming a gate of the second transistor. The memory area may be formed by a first and second memory areas and an output signal is generated indicative of a difference between charge stored in the first memory area and charge stored in the second memory area after a charge transfer to the first memory area.