公开(公告)号：US07476937B2

公开(公告)日：2009-01-13

申请号：US10625904

申请日：2003-07-24

申请人： Ritsuko Kawasaki ,  Kenji Kasahara ,  Hisashi Ohtani

发明人： Ritsuko Kawasaki ,  Kenji Kasahara ,  Hisashi Ohtani

IPC分类号： H01L29/04

CPC分类号： H01L29/78603 ,  H01L27/1255 ,  H01L27/1277 ,  H01L27/1281

摘要： A crystalline semiconductor film in which the position and size of a crystal grain is controlled is fabricated, and the crystalline semiconductor film is used for a channel formation region of a TFT, so that a high performance TFT is realized. An island-like semiconductor layer is made to have a temperature distribution, and a region where temperature change is gentle is provided to control the nucleus generation speed and nucleus generation density, so that the crystal grain is enlarged. In a region where an island-like semiconductor layer 1003 overlaps with a base film 1002, a thick portion is formed in the base film 1002. The volume of this portion increases and heat capacity becomes large, so that a cycle of temperature change by irradiation of a pulse laser beam to the island-like semiconductor layer becomes gentle (as compared with other thin portion). Like this, a laser beam is irradiated from the front side and reverse side of the substrate to directly heat the semiconductor layer, and heat conduction from the semiconductor layer to the side of the substrate and heat conduction of the semiconductor layer in the horizontal direction to the substrate are used, so that the increase in the size of the crystal grain is realized.

摘要翻译： 制造其中晶体的位置和尺寸被控制的结晶半导体膜，并且晶体半导体膜用于TFT的沟道形成区域，从而实现高性能TFT。 使岛状半导体层具有温度分布，并且设置温度变化缓慢的区域以控制核产生速度和核产生密度，使得晶粒增大。 在岛状半导体层1003与基膜1002重叠的区域中，在基膜1002中形成厚部。该部分的体积增加，热容变大，使得通过照射的温度变化的周期 脉冲激光束到岛状半导体层变得平缓（与其他薄部分相比）。 像这样，从基板的正面侧和反面侧照射激光束，直接加热半导体层，从半导体层向基板侧的热传导，将半导体层沿水平方向的热传导到 使用基板，从而实现晶粒尺寸的增加。

公开(公告)号：US06927109B1

公开(公告)日：2005-08-09

申请号：US09610637

申请日：2000-07-05

申请人： Koichiro Tanaka ,  Shunpei Yamazaki ,  Ritsuko Kawasaki

发明人： Koichiro Tanaka ,  Shunpei Yamazaki ,  Ritsuko Kawasaki

IPC分类号： B23K26/02 ,  B23K26/06 ,  B23K26/067 ,  H01L21/00 ,  H01L21/20 ,  H01L21/26 ,  H01L21/268 ,  H01L21/324 ,  H01L21/336 ,  H01L21/42 ,  H01L21/477 ,  H01L21/77 ,  H01L21/84

CPC分类号： H01L21/02686 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/067 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1285

摘要： To form a polycrystalline silicon film having a grain size of 1 μm or greater by means of laser annealing. A beam emitted from a laser apparatus (101) is split in two by a half mirror. The split beams are processed into linear shapes by cylindrical lenses (102) to (105), and (207), then simultaneously irradiate an irradiation surface (209). If an amorphous silicon film formed on a glass substrate is disposed on the irradiation surface (209), an area will be irradiated by both a linear shape beam entering from a front surface and a linear shape beam that has transmitted through the glass surface. Both linear shape beams irradiate the same area to thereby crystallize the amorphous silicon film.

摘要翻译： 通过激光退火形成粒径为1μm以上的多晶硅膜。 从激光装置（101）发射的光束被半反射镜分离。 通过圆柱透镜（102）到（105）和（207）将分割光束处理成线状，然后同时照射照射表面（209）。 如果将形成在玻璃基板上的非晶硅膜设置在照射面（209）上，则从前表面进入的线状光束和透过玻璃表面的线状光束都会被照射面积。 两个直线形光束照射相同的区域，从而使非晶硅膜结晶。

公开(公告)号：US06844249B2

公开(公告)日：2005-01-18

申请号：US10648288

申请日：2003-08-27

申请人： Ritsuko Kawasaki ,  Kenji Kasahara ,  Shunpei Yamazaki

发明人： Ritsuko Kawasaki ,  Kenji Kasahara ,  Shunpei Yamazaki

IPC分类号： H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L21/20

CPC分类号： H01L27/12 ,  H01L27/1281 ,  H01L27/1285

摘要： The invention relates to a method for manufacturing a semiconductor device, and it is an object of the invention to form a semiconductor area formed in island-like patterns as a single crystal or an area which can be regarded as a single crystal, and to simultaneously achieve a laminated structure by which various characteristics of TFTs can be stabilized, wherein an insulation film is formed on a glass substrate, and island-like semiconductor layer is formed thereon. A laser beam passed through a cylindrical lens is made into a linear laser beam and irradiated onto the island-like semiconductor layer by an optical system. The island-like semiconductor layer is subjected to two components, one of which is a direct laser beam component passing through the cylindrical lens and being irradiated directly onto the island-like semiconductor layer, and the other of which is a diffused laser beam component transmitting an insulation film and a substrate, being reflected by a reflection plate, and again transmitting the substrate and insulation film and being irradiated onto the island-like semiconductor laser.

摘要翻译： 本发明涉及一种半导体器件的制造方法，其目的在于，形成岛状图案形成的半导体区域，作为单晶体或可以看作单晶面积的区域，同时 实现了能够稳定TFT的各种特性的层压结构，其中在玻璃基板上形成绝缘膜，并且在其上形成岛状半导体层。 通过柱面透镜的激光束被制成线性激光束并通过光学系统照射到岛状半导体层上。 岛状半导体层经受两个部件，其中一个部件是通过柱面透镜的直接激光束部件，并直接照射在岛状半导体层上，另一个部件是扩散激光束分量传输 由反射板反射的绝缘膜和基板，并再次透射基板和绝缘膜并照射到岛状半导体激光器上。

公开(公告)号：US06809382B2

公开(公告)日：2004-10-26

申请号：US10633754

申请日：2003-08-04

申请人： Ritsuko Kawasaki ,  Hidehito Kitakado ,  Kenji Kasahara ,  Shunpei Yamazaki

发明人： Ritsuko Kawasaki ,  Hidehito Kitakado ,  Kenji Kasahara ,  Shunpei Yamazaki

IPC分类号： H01L2701

CPC分类号： H01L27/1214 ,  G02F1/13454 ,  H01L27/3244 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78633 ,  H01L29/78636 ,  H01L29/78645

摘要： To improve the operation characteristic and reliability of a semiconductor device by optimizing the structure of bottom gate type or inverted stagger type TFTs arranged in circuits of the semiconductor device in accordance with the function of the respective circuits. At least LDD regions that overlap with a gate electrode are formed in an N channel type TFT of a driving circuit, and LDD regions that do not overlap with the gate electrode are formed in an N channel type TFT of a pixel matrix circuit. The concentration of the two kinds of LDD regions is differently set from each other, to thereby obtain the optimal circuit operation.

摘要翻译： 通过根据各个电路的功能优化设置在半导体器件的电路中的底栅型或倒置交错型TFT的结构来提高半导体器件的操作特性和可靠性。 至少与栅电极重叠的LDD区域形成在驱动电路的N沟道型TFT中，并且在像素矩阵电路的N沟道型TFT中形成与栅电极不重叠的LDD区域。 两种LDD区域的浓度彼此不同，从而获得最佳电路操作。

公开(公告)号：US06709902B2

公开(公告)日：2004-03-23

申请号：US10035205

申请日：2002-01-04

申请人： Hidehito Kitakado ,  Ritsuko Kawasaki ,  Kenji Kasahara

发明人： Hidehito Kitakado ,  Ritsuko Kawasaki ,  Kenji Kasahara

IPC分类号： H01L2703

CPC分类号： H01L29/66765 ,  G02F1/13454 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78633

摘要： The present invention provides a semiconductor device in which a bottom-gate TFT or an inverted stagger TFT arranged in each circuit is suitably constructed in conformity with the functionality of the respective circuits, thereby attaining an improvement in the operating efficiency and reliability of the semiconductor device. In the structure, LDD regions in a pixel TFT are arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in an N-channel TFT of a drive circuit is arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in a P-channel TFT of the drive circuit is arranged so as to overlap with a channel protection insulating film and to overlap with the gate electrode.

摘要翻译： 本发明提供了一种半导体器件，其中布置在每个电路中的底栅TFT或反向交错TFT适当地构成为与各个电路的功能一致，从而提高了半导体器件的工作效率和可靠性 。 在该结构中，像素TFT中的LDD区域布置成不与沟道保护绝缘膜重叠，并且通过其至少一部分与栅电极重叠。 驱动电路的N沟道TFT中的LDD区域布置成不与沟道保护绝缘膜重叠，并且通过其至少一部分与栅电极重叠。 驱动电路的P沟道TFT中的LDD区域布置成与沟道保护绝缘膜重叠并与栅电极重叠。

公开(公告)号：US06624013B2

公开(公告)日：2003-09-23

申请号：US10124489

申请日：2002-04-18

申请人： Ritsuko Kawasaki ,  Kenji Kasahara ,  Shunpei Yamazaki

发明人： Ritsuko Kawasaki ,  Kenji Kasahara ,  Shunpei Yamazaki

IPC分类号： H01L2100

CPC分类号： H01L27/12 ,  H01L27/1281 ,  H01L27/1285

摘要： The invention relates to a method for manufacturing a semiconductor device, and it is an object of the invention to form a semiconductor area formed in island-like patterns as a single crystal or an area which can be regarded as a single crystal, and to simultaneously achieve a laminated structure by which various characteristics of TFTs can be stabilized, wherein an insulation film is formed on a glass substrate, and island-like semiconductor layer is formed thereon. A laser beam passed through a cylindrical lens is made into a linear laser beam and irradiated onto the island-like semiconductor layer by an optical system. The island-like semiconductor layer is subjected to two components, one of which is a direct laser beam component passing through the cylindrical lens and being irradiated directly onto the island-like semiconductor layer, and the other of which is a diffused laser beam component transmitting an insulation film and a substrate, being reflected by a reflection plate, and again transmitting the substrate and insulation film and being irradiated onto the island-like semiconductor laser.

公开(公告)号：US06599788B1

公开(公告)日：2003-07-29

申请号：US09640077

申请日：2000-08-17

申请人： Ritsuko Kawasaki ,  Kenji Kasahara ,  Hisashi Ohtani

发明人： Ritsuko Kawasaki ,  Kenji Kasahara ,  Hisashi Ohtani

IPC分类号： H01L2184

CPC分类号： H01L29/78603 ,  H01L27/1255 ,  H01L27/1277 ,  H01L27/1281

摘要： A crystalline semiconductor film in which the position and size of a crystal grain is controlled is fabricated, and the crystalline semiconductor film is used for a channel formation region of a TFT, so that a high performance TFT is realized. An island-like semiconductor layer is made to have a temperature distribution, and a region where temperature change is gentle is provided to control the nucleus generation speed and nucleus generation density, so that the crystal grain is enlarged. In a region where an island-like semiconductor layer 1003 overlaps with a base film 1002, a thick portion is formed in the base film 1002. The volume of this portion increases and heat capacity becomes large, so that a cycle of temperature change by irradiation of a pulse laser beam to the island-like semiconductor layer becomes gentle (as compared with other thin portion). Like this, a laser beam is irradiated from the front side and reverse side of the substrate to directly heat the semiconductor layer, and heat conduction from the semiconductor layer to the side of the substrate and heat conduction of the semiconductor layer in the horizontal direction to the substrate are used, so that the increase in the size of the crystal grain is realized.

公开(公告)号：US06555875B2

公开(公告)日：2003-04-29

申请号：US10125499

申请日：2002-04-19

申请人： Ritsuko Kawasaki ,  Kenji Kasahara ,  Hisashi Ohtani

发明人： Ritsuko Kawasaki ,  Kenji Kasahara ,  Hisashi Ohtani

IPC分类号： H01L2710

CPC分类号： H01L27/12 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675

摘要： A strip-like first insulating layer is formed on a glass substrate, and a second insulating layer is formed on the first insulating layer. Furthermore, an island-like semiconductor layer is formed on the second insulating layer. The island-like semiconductor layer is crystallized by irradiation with laser light through both surfaces of the glass substrate.

摘要翻译： 在玻璃基板上形成带状的第一绝缘层，在第一绝缘层上形成第二绝缘层。 此外，在第二绝缘层上形成岛状半导体层。 岛状半导体层通过玻璃基板的两面通过激光​​照射而结晶化。

公开(公告)号：US06410368B1

公开(公告)日：2002-06-25

申请号：US09696165

申请日：2000-10-26

申请人： Ritsuko Kawasaki ,  Kenji Kasahara ,  Hisashi Ohtani

发明人： Ritsuko Kawasaki ,  Kenji Kasahara ,  Hisashi Ohtani

IPC分类号： H01L2100

CPC分类号： H01L27/12 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675

摘要： A strip-like first insulating layer is formed on a glass substrate, and a second insulating layer is formed on the first insulating layer. Furthermore, an island-like semiconductor layer is formed on the second insulating layer. The island-like semiconductor layer is crystallized by irradiation with laser light through both surfaces of the glass substrate.

摘要翻译： 在玻璃基板上形成带状的第一绝缘层，在第一绝缘层上形成第二绝缘层。 此外，在第二绝缘层上形成岛状半导体层。 岛状半导体层通过玻璃基板的两面通过激光​​照射而结晶化。

公开(公告)号：US06362507B1

公开(公告)日：2002-03-26

申请号：US09550828

申请日：2000-04-18

申请人： Hiroyuki Ogawa ,  Kazuhide Tomiyasu ,  Ritsuko Kawasaki ,  Hidehito Kitakado ,  Kenji Kasahara ,  Shunpei Yamazaki

发明人： Hiroyuki Ogawa ,  Kazuhide Tomiyasu ,  Ritsuko Kawasaki ,  Hidehito Kitakado ,  Kenji Kasahara ,  Shunpei Yamazaki

IPC分类号： H01L2703

CPC分类号： H01L27/1222 ,  G02F1/13454 ,  H01L27/1214 ,  H01L27/1255 ,  H01L2029/7863

摘要： An object of the present invention is to improve the reliability and the operation performance of a semiconductor device comprising a driver circuit and a pixel pixel section by optimizing the TFT structure disposed in each circuit in accordance with the function of the circuit. The optimized circuit operation can be obtained by providing a LDD region that overlaps with at least the gate electrode in the driver circuit n-channel TFT, and a LDD region in the pixel section n-channel TFT in which the impurity concentration of the both LDD regions are differed.

摘要翻译： 本发明的目的是通过根据电路的功能优化设置在每个电路中的TFT结构来提高包括驱动电路和像素像素部分的半导体器件的可靠性和操作性能。 可以通过提供与驱动电路n沟道TFT中的至少栅电极重叠的LDD区域和像素区间n沟道TFT中的两个LDD的杂质浓度的LDD区域来获得优化的电路操作 地区不同。