摘要:
A pixel array comprising a plurality of pixel driving circuits for an electroluminescent device. Each pixel driving circuit comprises a switch transistor, a scan line, a data line, a driving transistor, an electroluminescent device, a storage capacitor and a compensation capacitor. The scan and data lines are respectively connected to first and second terminals of the switch transistor. First and second terminals of the driving transistor are respectively connected to a third terminal of the switch transistor and a first potential. The electroluminescent device is connected between a third terminal of the driving transistor and a second potential. The storage capacitor is connected between the first terminal of the driving transistor and the first potential, or a previous scan line. The compensation capacitor is connected between the first terminals of the switching and driving transistors. Not all compensation capacitors connected to the same scan line have the same capacitance.
摘要:
An integrated driver device frame of a liquid crystal display panel is provided. The integrated driver device frame comprises a plurality of driver units, a plurality of driver lines and a plurality of output terminals. Each output terminal is coupled to a corresponding pixel element respectively. In the integrated driver device frame of the invention, the plurality of driver units is arranged with two staggered rows, in order that the driver unit width is larger than the interval of every neighboring two output terminals and is less than two times of the interval. Accordingly, the interval of two neighboring output terminals can be equal to the pixel pitch and the dot-per-inch resolution of the LCD panel can be enhanced.
摘要:
An electroluminescence (EL) device includes a substrate and a plurality of pixels formed on the substrate. Each pixel includes a first area including at least a first capacitor and a second capacitor, the first capacitor including a first conductive layer, a first dielectric layer over the first conductive layer, and a second conductive layer over the first dielectric layer, and the second capacitor including the second conductive layer, a second dielectric layer over the second conductive layer, and a third conductive layer over the second dielectric layer, and a second area including a first semiconductor layer formed on the substrate, a first gate oxide layer over the first semiconductor layer, and a fourth conductive layer over the first gate oxide layer.
摘要:
A data driving circuit and organic light emitting diode display, comprising a D/A converter, a switch unit, a first analog sampling storage circuit and a second analog sampling storage circuit. The first analog sampling storage circuit is controlled by a first signal for storing corresponding first analog transformed data in the first cycle, and controlled by a second signal for outputting first analog data corresponding to the first analog transformed data in the second cycle. The second analog sampling storage circuit is controlled by the second signal for storing the second analog transformed data in the second cycle, and controlled by the first signal for outputting second analog data corresponding to the second analog transformed data in a third cycle.
摘要:
A pixel device of an electroluminescence device that comprises a voltage signal having a first state and a second state, a current signal, a first circuit further comprising a first transistor, a second transistor and a capacitor, the capacitor including a first terminal coupled to a power supply, the first transistor including a gate electrode coupled to a second terminal of the capacitor, and the second transistor including a gate electrode receiving the voltage signal, wherein the first circuit provides a voltage level across the capacitor in response to the first state of the voltage signal, and maintains the voltage level in response to the second state of the voltage signal, and a second circuit further comprising a third transistor and a fourth transistor, the third transistor including a gate electrode coupled to a gate electrode of the fourth transistor, wherein the second circuit provides a current proportional to the magnitude of the current signal in response to the first state of the voltage signal, and the first circuit provides a sum current of the proportional current and the current signal.
摘要:
The present invention provides a circuit for driving a flat panel display, including a storage capacitor, a transmission gate and a current-limiting transistor. A first terminal of the storage capacitor is coupled to a system voltage, and a second terminal of the storage capacitor is at storage voltage. A first input/output terminal of the transmission gate is coupled to the storage voltage, and the second input/output terminal of the transmission gate is coupled to the data current source. A first gate terminal of the transmission gate is coupled to the first signal; a second gate terminal of the transmission gate is coupled to the second signal. A gate terminal of the current-limiting transistor is coupled to the storage voltage, wherein a first source/drain terminal is coupled to the system voltage, and a second source/drain terminal provides current for driving the flat panel display.
摘要:
A shift-register circuit. The input circuit receives the input pulse and outputs a high-voltage level input signal when the input pulse is at high voltage level. The level shifting circuit includes a first PMOS transistor having a first gate, a first drain and a first source coupled to a first voltage VDD, a second PMOS transistor having a second gate coupled to the first drain, a second drain coupled to the first gate and a second source coupled to the first voltage VDD, a first inverse logic gate coupled to the first drain and having an output terminal, a second inverse logic gate coupled to the second drain and having an inverse output terminal coupled to the input circuit, a first NMOS transistor having a third gate coupled to the input circuit, a third drain coupled to the first drain and a third source coupled to a second voltage VSS, a second NMOS transistor having a fourth gate coupled to the second gate and a fourth drain coupled to the second drain and a fourth source coupled to the second voltage VSS. The output circuit is coupled to the output terminal for outputting the shift-register signal.
摘要:
A method is used for reducing spikes in a digital-to-analog converter (DAC), which includes a plurality of digit circuits for transforming a digital voltage signal into an analog voltage signal. The method includes receiving the digital voltage signal, setting the digit circuit corresponding to a predetermined bit of the digital voltage signal closest to an output module, and outputting an analog voltage signal corresponding to the digital voltage signal, wherein the predetermined bit of the digital voltage signal is the bit with least signal variation among the bits of the digital voltage signal.
摘要:
A method of manufacturing a non-volatile memory is provided. A substrate includes a memory cell region and a first periphery circuit region. The memory cell region includes a select transistor region. A first gate dielectric layer having a first thickness is formed on the substrate in the first periphery circuit region and the select transistor region. A portion of the first gate dielectric layer on the select transistor region is removed to form a second gate dielectric layer. The second dielectric layer has a second thickness, wherein the second thickness is less than the first thickness.
摘要:
A dual gate layout of a thin film transistor of liquid crystal display to alleviate dark current leakage is disclosed. The layout includes (1) a polysilicon on a substrate having a shaped of L- or of snake from top-view, having a heavily doped source region, a first lightly doped region, a first gate channel, a second lightly doped region, a second gate channel, a third lightly doped region and a heavily doped drain region formed in order therein; (2) a gate oxide layer formed on the poly-Si layer and the substrate, (3) a gate metal layer then formed on the gate oxide layer having a scanning line and an extension portion with a L-shaped or an I-shaped. The gate metal intersects with the poly-Si layer thereto define the forgoing gate channels. Among of gate channels, at least one is along the signal line through a source contact.